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11. 发明专利

JPH0477398A CERIUM BORIDE BASE SINGLE CRYSTAL AND ITS GROWING METHOD 失效
公开(公告)号：JPH0477398A
公开(公告)日：1992-03-11
申请号：JP19167290
申请日：1990-07-19
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C30B29/10 , H01J1/14 , H01J9/04
摘要： PURPOSE:To obtain a high-quality cerium boride-base single crystal free from deffect by using cerium boride containing a specified amt. of lanthanum boride as the source material in the process of growing the cerium boride-base single crystal by molten liquid method. CONSTITUTION:In the process of growing the cerium boride-base single crystal by molten liquid method, cerium boride containing lanthanum boride of >=1 to

12. 发明专利

JPH03203186A STABILIZING METHOD FOR HIGH FREQUENCY POWER SOURCE OUTPUT 失效
公开(公告)号：JPH03203186A
公开(公告)日：1991-09-04
申请号：JP34436889
申请日：1989-12-28
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： H05B6/06 , G05F1/00
摘要： PURPOSE:To achieve a higher output stability by separating fluctuation from a set value of a high frequency current into a part caused by fluctuation of an anode voltage and a part caused by other factors, and performing a feedback control to offset them. CONSTITUTION:An anode voltage and a high frequency current are measured simultaneously using a high frequency current detector 3, and an anode voltage detector 4, and separated into a deflection of a high frequency current produced by deflection of a set value of an anode voltage, and a high frequency current produced by other factors. For the former, it is weak because of a feedback function inside a high frequency power source, while the latter is strong, so a feed back control is performed for keeping the high frequency current constant. A higher output stability can thus be achieved at a very low cost compared to a method of stabilizing the output using a constant voltage source of a larger capacity for keeping the voltage of the power source constant.

13. 发明专利

JPH0244100A METHOD FOR GROWING TITANIUM CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH0244100A
公开(公告)日：1990-02-14
申请号：JP19411588
申请日：1988-08-03
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C30B29/36
摘要： PURPOSE:To grow a high-quality TiC single crystal by incorporating specific amounts of Ta and/or Nb into a TiC sintered bar as a starting raw material at the time of growing a high-quality TiC single crystal by a melt process, such as floating zone method. CONSTITUTION:A powder mixture in which 0.2-10wt.% Ta and/or Nb is added to a TiC powder is compacted into bar shape. The resulting bar-shaped body is sintered in a nonoxidizing atmosphere, by which a TiC sintered bar 3 containing Nb, Ta, etc., is prepared. The sintered bar 3 is attached to an upper shaft 1 via a holder 2, and a material 3' for forming an initial melting zone consisting of TiC single crystal in the lower part of the sintered bar 3 is fixed via a holder 2' to a lower shaft 1'. Subsequently, the end of the above initial melting zone-forming material 3' is melted by heating by means of high-frequency coils 6 to form a melting zone 5, and, while allowing the upper shaft 1 and the lower shaft 1' to descend gradually, a high-quality TiC single crystal 4 can be formed at the end of the initial melting zone-forming material 3' by a floating zone method.

14. 发明专利

JPS62100500A PRODUCTION OF SINGLE CRYSTAL TITANIUM CARBONITRIDE 失效
公开(公告)号：JPS62100500A
公开(公告)日：1987-05-09
申请号：JP23904885
申请日：1985-10-25
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO , YAMADA TETSUO
IPC分类号： C30B29/38 , C30B13/00 , C30B29/10
摘要： PURPOSE:To produce a large-sized single crystal consisting of a titanium carbonitride by adequately controlling the compsn. of a rod which is a supply sintered body, the compsn. of a melt, and the partial pressure of gaseous nitrogen in atmosphere. CONSTITUTION:The rod of the supply sintered body is so composed that the components of nitrogen and carbon evaporating from the melt in the stage of melting are added to the solid phase components of the titanium carbonitride to be obtd. THe compsn. of the liquid phase component co-existing with the solid phase component of the titanium carbonitride to be obtd. is used for the compsn. of the melt. The partial pressure of the gaseous nitrogen in the growth of the single crystal is made 0.1-10 times the equil. dissociation pressure (calculated value) of the titanium carbonitride and the entire gaseous pressure is controlled to 2-100atm. more preferably 5-50atm. The rod of the sintered body to be used is prepd. by mixing titanium metal and carbon with titanium carbide and titanium nitride powder. The single crystal of the large-sized titanium carbonitride having the uniform quality and good quality is produced by the above-mentioned method.

15. 发明专利

JP2000143231A SCANDIUM BOROCARBIDE AND ITS PRODUCTION 失效
公开(公告)号：JP2000143231A
公开(公告)日：2000-05-23
申请号：JP33342798
申请日：1998-11-09
申请人： NAT INST RES INORGANIC MAT
发明人： TANAKA TAKAO , YING SHI , ANDREAS LEITHE-JASPER
IPC分类号： C01B35/04 , G02B1/02
摘要： PROBLEM TO BE SOLVED: To provide a new scandium borocarbide compound useful as a spectral element material, thermoelectric element material or the like. SOLUTION: This production process for a scandium borocarbide compound represented by the stoichiometric compositional formula Sc2BC3, comprises: mixing Sc2O3 with carbon in a ratio based on formula I, Sc2O3+4C→Sc2C+3 CO↑, to obtain a mixture; reacting the mixture at about 1,600 deg.C under vacuum or in an inert gas atmosphere to form a scandium carbide compound (Sc2C); further mixing the scandium carbide compound (Sc2C) with boron and carbon in ratios based on formula II, Sc2C+B+2C→Sc2BC3, respectively, to obtain another mixture; and reacting this mixture under the same conditions as described above.

16. 发明专利

JPH11147710A PRODUCTION OF SCANDIUM BOROCARBIDE 失效
公开(公告)号：JPH11147710A
公开(公告)日：1999-06-02
申请号：JP32698897
申请日：1997-11-12
申请人： NAT INST RES INORGANIC MAT
发明人： TANAKA TAKAO
IPC分类号： C01B35/02 , C01B35/04 , G02B1/02
摘要： PROBLEM TO BE SOLVED: To create new boron carbide. SOLUTION: A mixture obtained by mixing Sc2 O3 with boron at a ratio based on the following formula I is preferably formed into pellet-like shape and the pellet-like material is reacted in vacuum or inert gas atmosphere at 1,500 to 1,850 deg.C to afford scandium boride compound and further, the scandium boride compound is mixed with carbon at a ratio based on the following formula II and the resultant mixture is formed into preferably pellet-like shape and the pellet-like material is reacted under the same reaction conditions as the above conditions to produce scandium borocarbide represented by formula V ScB(17+x)C(0.25+y) [-10

17. 发明专利

JPH09100117A YTTRIUM BOROSILICIDE AND ITS RARE EARTH SUBSTITUENT 失效
公开(公告)号：JPH09100117A
公开(公告)日：1997-04-15
申请号：JP27837095
申请日：1995-10-02
申请人： NAT INST RES INORGANIC MAT
发明人： TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C01B35/18 , C04B35/58 , C30B29/10
摘要： PROBLEM TO BE SOLVED: To obtain a new polyboride utilizable as a functional material for thermoelement materials or spectral element materials. SOLUTION: This yttrium borosilicide is represented by the general formula YB46+x Si1.5+y (-10

18. 发明专利

JPH04164897A LANTHANUM BORIDE-BASED SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME 失效
公开(公告)号：JPH04164897A
公开(公告)日：1992-06-10
申请号：JP29135490
申请日：1990-10-29
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C30B29/10 , H01J1/14 , H01J9/04
摘要： PURPOSE:To enable growth of lanthanum boride-based single crystal of good quality without any defects by using a raw material containing a specific amount of a specified rare earth boride in lanthanum boride as the raw material. CONSTITUTION:The aforementioned rare earth boride-based single crystal is expressed by the formula (La1-xMx)B6 (M is Pr, Nd, Sm or Gd; 0.01

19. 发明专利

JPH02275793A HIGH FREQUENCY POWER SOURCE OUTPUT STABILIZATION EQUIPMENT AND AUTOMATICAL SINGLE CRYSTAL-GROWING DEVICE USING THE SAME EQUIPMENT 失效
公开(公告)号：JPH02275793A
公开(公告)日：1990-11-09
申请号：JP22374789
申请日：1989-08-30
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO , ITOU RIKIMA
IPC分类号： C30B13/28 , C30B13/30 , C30B29/10 , H01J9/04 , H01J9/06 , H05B6/04
摘要： PURPOSE:To contrive to stabilize a filament voltage and an anode voltage by employing a constant voltage electric source as the filament electric source of an oscillating tube and disposing an anode voltage control device for detecting and feed-back-controlling the anode voltage. CONSTITUTION:A constant voltage electric source 6 is employed as the filament electric source of an oscillating tube 1, and an anode voltage detected with an anode voltage detector 4 and a high frequency electric current detected with a high frequency electric current detector 3 are fed into a CPU 5 to compare the detected anode voltage with a pre-set value. The compared result is fed-back to the oscillating tube 1 through a D/A converter to control the filament voltage and the anode voltage.

20. 发明专利

JPH01286996A METHOD FOR GROWING TITANIUM CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH01286996A
公开(公告)日：1989-11-17
申请号：JP11336188
申请日：1988-05-10
申请人： NAT INST RES INORGANIC MAT
发明人： OTANI SHIGEKI , TANAKA TAKAO , ISHIZAWA YOSHIO
IPC分类号： C30B13/00 , C30B29/36
摘要： PURPOSE:To reduce grain boundary density and grow a large-sized TiC single crystal of good quality, by using TiC containing W. CONSTITUTION:W powder in an amount of 0.2-3.0wt.% and a binder (e.g. camphor) are added to TiC powder and pressed with rubber to provide a green compact rod, which is then heated at about 2,000 deg.C in a vacuum or inert gas atmosphere to afford a calcined rod 3. The resultant calcined rod 3 is then set through a holder 2 on an upper shaft 1 and a material 3' (e.g. TiC single crystal) for forming an initial melting zone is fixed and supported thereunder through a holder 2' on a lower shaft 1'. The end of the material 3' for forming the initial melting zone is then melted by induction heating from a high-frequency working coil 6 in an inert gas atmosphere to form a melting zone 5 and the upper shaft 1 and lower shaft 1' are moved at 0.2-5cm/hr speed to grow the aimed TiC crystal.

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