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11. 发明专利

JP2003281993A Electron source and manufacturing method therefor 审中-公开
标题翻译：电子源及其制造方法
公开(公告)号：JP2003281993A
公开(公告)日：2003-10-03
申请号：JP2002083928
申请日：2002-03-25
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide an electron source together with its manufacturing method to improve a heat resistance while a degradation in electron release characteristic is suppressed. SOLUTION: Related to an electron source 10, a lower electrode 2 is formed on one surface side of a substrate 1, a polycrystal silicon layer 3 of non-dope is formed on the lower electrode 2 as a semiconductor layer. A electron passing layer 6 is formed on the polycrystal layer 3, and a surface electrode 7 is formed on the electron passing layer 6. The surface electrode 7 comprises a conductive nitride layer 7a laminated on the electron passing layer 6 and a metal layer 7b laminated on the conductive nitride layer 7a. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供电子源及其制造方法以提高耐热性，同时抑制电子释放特性的降低。解决方案：与电子源10相关，在基板1的一个表面侧形成下电极2，在作为半导体层的下电极2上形成非掺杂多晶硅层3。在多晶层3上形成电子通过层6，在电子通过层6上形成表面电极7.表面电极7包括层叠在电子通过层6上的导电氮化物层7a和层叠的金属层7b 在导电氮化物层7a上。版权所有（C）2004，JPO

12. 发明专利

JP2003197097A METHOD FOR MANUFACTURING FIELD EMISSION ELECTRON SOURCE 审中-公开
公开(公告)号：JP2003197097A
公开(公告)日：2003-07-11
申请号：JP2001392701
申请日：2001-12-25
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , BABA TORU
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a field emission electron source capable of increasing the stability of electron emission characteristics with elapse of time and reducing a production cost. SOLUTION: A porous polycrystal silicon layer 4 having a large number of silicon fine crystals provided between the grains of polycrystal silicon is formed by making porous the polycrystal silicon layer 3 on a lower electrode 12 formed of an n-silicon substrate 1 and an ohmic electrode 2 by anodizing. In an insulation film forming process, an insulation film is formed on the surfaces of grains and silicon fine crystals to form a strong field drift layer 6. Next, a surface electrode 7 is formed on the strong field drift layer 6. In the insulation film forming process, oxidized film is formed on the surfaces of the grains and silicon fine crystals by a rapid thermal oxidation method, and the film quality of the oxidized film is improved by a rapid thermal nitriding method. In the rapid thermal oxidation method and the rapid thermal nitriding method, a heat treatment time is shortened to such a degree that the occurrence of damage to the silicon fine crystals can be suppressed. COPYRIGHT: (C)2003,JPO

13. 发明专利

JP2003187688A FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURING METHOD OF THE SAME 审中-公开
公开(公告)号：JP2003187688A
公开(公告)日：2003-07-04
申请号：JP2001380355
申请日：2001-12-13
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , BABA TORU
IPC分类号： H01J9/02 , H01J1/30 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source having improved heat resistant property while restraining the lowering of electron emission property, and to provide a manufacturing method of the same. SOLUTION: The field emission type electron source 10 comprises a lower electrode 2 formed on one surface side of a substrate, a non-doped polycrystalline silicon layer 3 formed on the lower electrode 2 as a semiconductor layer, a strong electric field drift layer 6 composed of oxidized porous silicon polycrystalline layer formed on the polycrystalline silicon layer 3 as an electron passing layer, and a surface electrode 7 formed on the strong electric field drift layer 6. The surface electrode 7 is composed of a conductive carbide layer 7a laminated on the strong electric field drift layer 6 and a noble metal layer 7b laminated on the conductive carbide layer 7a. COPYRIGHT: (C)2003,JPO

14. 发明专利

JP2003133309A METHOD AND DEVICE FOR FORMING THIN INSULATING FILM, FIELD EMISSION ELECTRON SOURCE, AND MOSFET 审中-公开
公开(公告)号：JP2003133309A
公开(公告)日：2003-05-09
申请号：JP2001329908
申请日：2001-10-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , TAKEGAWA YOSHIYUKI , BABA TORU
IPC分类号： H01J1/312 , H01J9/02 , H01L21/316 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method by which a thin insulating film having a higher breakdown voltage than the conventional thin insulating film has can be formed. SOLUTION: After a thin insulating film (silicon oxide film), which serves as a base, is formed on the surface of a silicon crystal through an electrochemical method, a desired thin insulating film (silicon oxide film) is obtained by performing a heat-treating step in the temperature profile shown in Fig. 1. In order to obtain the desired thin insulating film, first heat treatment is conducted at a first set temperature T1 and a temperature increase rate both of which are set so that the moisture contained in the thin insulating film is removed, without bumping and second heat treatment is performed at a second set temperature T2, which is set higher than the first set temperature T1, so that structure relaxation may occur in the thin insulating film in the heat- treating step, as shown in Fig. 1.

15. 发明专利

JP2003086093A METHOD OF MANUFACTURING FIELD EMISSION TYPE ELECTRON SOURCE 审中-公开
公开(公告)号：JP2003086093A
公开(公告)日：2003-03-20
申请号：JP2002122330
申请日：2002-04-24
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type electron source with low cost, high electron emission efficiency, and high reliability. SOLUTION: A polycrystal silicone layer 3 which is a layered semiconductor made of polycrystal silicon is formed on a conductive layer 12 constituting a part of a conductive substrate, and the polycrystal silicon layer 3 is annealed in inert gas. The annealed polycrystal silicon layer 3' constitutes the polycrystal semiconductor layer, a part of the polycrystal layer 3' is made porous by anodic oxidation to form the polycrystal silicon layer 4. After that, the porous polycrystal silicon layer 4 is electrochemically oxidized to form a strong field drift layer 6. Then, a surface electrode 7 is formed on the strong field drift layer 6.

16. 发明专利

JP2002343239A METHOD OF MANUFACTURING FIELD EMISSION ELECTRON SOURCE 失效
公开(公告)号：JP2002343239A
公开(公告)日：2002-11-29
申请号：JP2001145526
申请日：2001-05-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type elec tron source capable of improving reliability and an electron emission characteris tic. SOLUTION: A porous polycrystalline silicon layer 4 is formed, by forming a polycrystalline silicon layer 3 which is a lamellar semiconductor layer comprising polycrystalline silicon on a conductive layer 12 composing a part of a conductive substrate and then providing pores on a part of the polycrystalline silicon layer 3 by anodizing. A strong field drift layer 6' is formed by electrochemically oxidizing the porous polycrystalline silicon layer 4. A defect in the strong field drift layer 6' is passivated, by applying a hydrogen radical on a surface of the strong field drift layer 6'. A surface electrode 7 is formed on a strong field drift layer 6, after irradiation of hydrogen radicals.

17. 发明专利

JP2002343230A FIELD EMISSION TYPE ELECTRON SOURCE 失效
公开(公告)号：JP2002343230A
公开(公告)日：2002-11-29
申请号：JP2001145527
申请日：2001-05-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable field emission type electron source which can be used as an electron source for display. SOLUTION: The field emission type electron source is provided with a plurality of wirings 12a aligned on one surface of an insulation substrate 11 used as a substrate, a strong electric field drift layer 6 having a plurality of drift parts 6a formed so as to overlap the wirings 12a, a plurality of surface electrodes 7 respectively facing the wirings 12a via each drift part 6a, and a plurality of bus electrodes 25, connected in common the plurality of surface electrodes 7 which is aligned in the direction intersecting the wirings 12a on the strong electric field drift layer 6 per row. Narrow parts 8a comprising a conductive material narrowing current paths between surface electrodes 7 and bus electrodes 25 are interposed between the surface electrodes 7 and the bus electrodes 25. The narrow parts 8a will break, when an overcurrent flows. The narrow parts 8a constitutes overcurrent protecting elements, which is interposed between the surface electrodes 7 and the bus electrodes 25 and which limits the current flowing in the surface electrodes 7.

18. 发明专利

JP2002298728A FIELD EMISSION TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002298728A
公开(公告)日：2002-10-11
申请号：JP2001096904
申请日：2001-03-29
申请人： MATSUSHITA ELECTRIC WORKS LTD , NAT INST OF ADV IND & TECHNOL
发明人： AIZAWA KOICHI , KOMODA TAKUYA , IWATA YASUTSUGU
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source and its manufacturing method whereby it is possible to establish a large emission current, a high electron emitting efficiency, and a less spread of the energy distribution of emitted electrons. SOLUTION: The field emission type electron source includes an electroconductive base board of such a structure that a conductor layer 12 is provided on one surface of an insulated board 11 made of glass. A strong electric field drift layer 6 whereon electrons drift is formed on one surface of the insulated board 11 while a surface electrode 7 is formed on the strong electric field drift layer 6. The drift layer 6 is formed from a number of clusters 60 consisting of silicon micro-crystals 63 in which distribution of crystalline grain sizes of nano-order is restricted to a certain specified range and oxygen atoms 81 as barrier atoms having a greater band gap than the silicon micro- crystals 63 and is considered to be arranged as tied together continuously in such a form that oxygen atom 81 is interposed between adjoining silicon micro- crystals 63.

19. 发明专利

JP2002008520A FIELD RADIATION TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002008520A
公开(公告)日：2002-01-11
申请号：JP2000191978
申请日：2000-06-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , KONDO YUKIHIRO
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field radiation type electron source in which the fluctuation of electron emitting direction is smaller than the conventional method and its manufacturing method. SOLUTION: An intense-field drift layer 6 having a porous polycrystalline silicon layer is formed on the conductive substrate 100 and a conductive film 7 is provided on the intense-field drift layer 6. The drift section 6a of the intense-field drift layer 6 is formed by smoothing the surface of a polycrystalline silicon layer 3 and then by making porous by anodizing and further by oxidizing by a rapid thermal oxidization technology.

20. 发明专利

JP2001319787A SOLID LIGHT EMISSION DEVICE 失效
公开(公告)号：JP2001319787A
公开(公告)日：2001-11-16
申请号：JP2000139154
申请日：2000-05-11
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： AIZAWA KOICHI , KOMODA TAKUYA , KOSHIDA NOBUYOSHI
IPC分类号： H01L51/50 , G09F9/30 , H01L27/32 , H01L33/34 , H05B33/14 , H05B33/22 , H05B33/26 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a new solid light emission device with a little cross talk which can prevent decrease of aperture rate of pixels. SOLUTION: On one surface of a substrate 1, a row of plural rear face electrodes 4 is installed, and a strong electric field drift layer 6 is formed so as to cover the plural rear face electrodes 4, a luminous layer 2 is laminated on the strong electric field drift layer 6, and a row of plural transparent electrodes 3 is installed on the luminous layer 2 in a crossing direction to the rear face electrodes 4. The strong electric field drift layer 6 has also a function to supply electrons to the luminous layer 2 in order to illuminate the luminous layer 2 by the drift of the electrons injected from the rear face electrodes 4 when a voltage is applied between the transparent electrodes 3 and the rear face electrodes 4 taking the transparent electrodes 3 as positive electrodes. As for the strong electric field drift layer 6, the region almost overlapped with the rear face electrodes 4 is composed of a porous semiconductor layer 6a of an oxidized porous polycrystal silicon layer, and the rest of the region is composed of a semiconductor layer 6b of a polycrystal silicon layer.

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