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11. 发明专利

JPS59132655A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS59132655A
公开(公告)日：1984-07-30
申请号：JP781583
申请日：1983-01-19
申请人： Matsushita Electric Ind Co Ltd
发明人： YOSHINO MASARU , NAKAYAMA MITSUO , YONEDA MASATO
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372
CPC分类号： H01L27/14887
摘要： PURPOSE:To reduce the number of control electrodes and thus contrive to improve the function of blooming inhibition by a method wherein a control gate region is provided between a drain region and a signal charge read-out means, a signal charge read-out gate region, a gate region, and the control gate region are formed by means of a common electrode, and a control signal is impressed on the common electrode. CONSTITUTION:The potential 27' of a storage electrode 3a is lower than respective heights 26' and 28' of potential barriers of the signal read-out gate region 2a and the control gate region 7a. When light comes incident to a photo diode 1a in this state, the potential of the diode 1a increases to the potential corresponding to the intensity of the incident light. Next, if the respective heights of potential barriers of the regions 2a, 3a, and 7a in case of reading out signal charges accumulated in the photo diode are 26, 27, and 28 by impressing a high level VH on a polycrystalline Si electrode 22; at this time, the signal charges accumulated in the photo diode 1a are 23-24. When the amount of charges thereof is that of the signal charges within the maximum amount of charges which can be transferred by the storage region 3a of a signal read-out CCD, the charge exceeding the potential barrier 28 does not exist at all.
摘要翻译：目的：为了减少控制电极的数量，从而通过其中在漏极区域和信号电荷读出装置之间提供控制栅极区域的方法来改善开花抑制的功能，信号电荷读出栅极区域，栅极区域和控制栅极区域通过公共电极形成，并且控制信号施加在公共电极上。构成：存储电极3a的电势27'低于信号读出栅极区域2a和控制栅极区域7a的势垒的相应高度26'和28'。当光在这种状态下入射到光电二极管1a时，二极管1a的电位增加到对应于入射光强度的电位。接下来，如果通过在多晶硅电极22上施加高电平VH，在读出在二极管中累积的信号电荷的情况下区域2a，3a和7a的势垒的相应高度为26,27和28，此时，累积在光电二极管1a中的信号电荷为23-24。当电荷量是由信号读出CCD的存储区域3a传送的最大电荷量内的信号电荷的量时，根本不存在超过势垒28的电荷。

12. 发明专利

JPS5839030A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5839030A
公开(公告)日：1983-03-07
申请号：JP13686181
申请日：1981-08-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WADA TAKAMICHI , NAKAYAMA MITSUO
IPC分类号： H01L27/00 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L27/12
摘要： PURPOSE:To increase the degree of freedom of wirings between laminated semiconductor layers without partly concentrating the signal output terminal to exterior from a semiconductor and to decrease the impedance of the wire of a power source by wiring between the layers with the side surface of the laminated layers. CONSTITUTION:An active element is formed of n type diffused layers 2, 3 and a gate electrode 6. Numeral 7 designates a wire electrode formed on the first semiconductor layer 1. The peripheral end A of the second semiconductor layer 9 is smoothly and obliquely formed on the first layer 1. 14 designates a gate electrode. 15 is a wire electrode of an active element formed on the second layer 9. Wire electrode 7 on the layer 1 and wire electrode 15 on the layer 9 are connected through the oblique peripheral end A of the layer 9 directly in the section B. Since the wire between the semiconductor layers laminated in thicknesswise direction smoothly form obliquely the wire electrode, the electrode wire can be formed between the first and the second layers without stepwise disconnection.

13. 发明专利

JPS5732182A Solid state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS5732182A
公开(公告)日：1982-02-20
申请号：JP10746480
申请日：1980-08-04
申请人： Matsushita Electric Ind Co Ltd
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H01L27/148 , H01L31/10 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14831
摘要： PURPOSE:To suppress generation of smears due to intense incident light by forming an electrode by using an opaque electrode material and by covering the surface of a semiconductor substrate of one picture element with an electrode completely. CONSTITUTION:Transfer electrodes 7' and 8' transferring signal charge and metallic electrodes 2 coming in contact with a photoconductor film 3 at each semiconductor substrate 4 side are made of opaque electrode material, and the surface of the semiconductor substrate 4 of each picture element viewed from a light incidence side is covered completely with the said electrode to prevent direct light incidence to the area of the semiconductor substrate 4 where a transfer line 6 is to be formed. For this purpose, the transfer electrodes 7' and 8' are made of opaque Mo as well as the metallic electrodes 2' connected to a photoconductor film 3 at the semiconductor substrate 4 side.
摘要翻译：目的：通过使用不透明电极材料形成电极并且通过用电极完全覆盖一个像素的半导体衬底的表面来抑制由于强入射光而产生的污迹。构成：在每个半导体衬底4侧，与感光膜3接触的传送信号电荷和金属电极2的转移电极7'和8'由不透明电极材料制成，并且每个像素的半导体衬底4的表面从光入射侧完全被所述电极覆盖，以防止直接光入射到要形成传输线6的半导体衬底4的区域。为此，传输电极7'和8'由不透明的Mo制成，以及在半导体衬底4侧连接到光电导体膜3的金属电极2'。

14. 发明专利

JPS5687986A SOLIDSTATE IMAGE PICKUP DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS5687986A
公开(公告)日：1981-07-17
申请号：JP16505079
申请日：1979-12-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369
摘要： PURPOSE:To increase the reliability and yield rate, by preventing phosphorus from contacting with the electrode metal, even with melting flow through the use of phosphorus glass for the flat surface, through the covering of wiring electrodes on the semiconductor substrate by the metal film connected with the scanning circuit of photoconductive film. CONSTITUTION:On a P type silicon substrate 7, diffusion layers 8, 8' and 9 are formed, to form the gate oxide film 11, field oxide film 10 and gate electrode 12. On this substrate 7, phosphorus glass PSG film 13 including 5-20% of P2O5 for SiO2 is deposited on the entire surface with the specified thickness by means of gas phase vapor deposition method, and the contact window 19' for the image and the contact window 21' for the wiring section at the surrounding are made open by using the photoetching method. Next, aluminum is vapor-deposited on the surface with a given thickness to form the specified wiring pattern and the Al electrode 18 on the film 13. Further, in taking the electric contact of the photoconductive film on the substrate 7 at the opening 17, the electrode 18 is covered with the molybdenum film 14, to prevent the phosphorus glass with melting flow from being contacted to the electrode 18.

15. 发明专利

JPH065727B2 失效
公开(公告)号：JPH065727B2
公开(公告)日：1994-01-19
申请号：JP20543081
申请日：1981-12-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374

16. 发明专利

JPH0232833B2 失效
公开(公告)号：JPH0232833B2
公开(公告)日：1990-07-24
申请号：JP10746480
申请日：1980-08-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H01L27/148 , H01L31/10 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/372 , H04N5/374

17. 发明专利

JPS59132659A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS59132659A
公开(公告)日：1984-07-30
申请号：JP839583
申请日：1983-01-20
申请人： Matsushita Electric Ind Co Ltd
发明人： YOSHINO MASARU , NAKAYAMA MITSUO , YONEDA MASATO
IPC分类号： H01L21/339 , H01L27/146 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372
CPC分类号： H01L27/14887
摘要： PURPOSE:To enable to increase the integration, reduce the number of control electrodes, and thus contrive to improve the function of blooming inhibition by a method wherein a gate region is provided between a drain region and a signal charge read-out means, an electrode for driving the gate region is made common to an electrode for driving a signal read-out region between a photodiode and the signal charge read-out means, and the same control pulse is impressed. CONSTITUTION:The potential 27' of a storage electrode 3a is lower than respective heights 26' and 28' of potential barriers of the signal read-out gate region 2a and the control gate region 7a. When light comes incident to the photodiode 1a in this state, the potential of the diode 1a increases to the potential corresponding to the intensity of the incident light. Next, if the respective heights of potential barriers of the regions 2a, 3a, and 7a in case of reading out signal charges accumulated in the photodiode are 26, 27, and 28 by impressing a high level VH on a polycrystalline Si electrode 22, the signal charges accumulated in the photodiode 1a are 23-24. When the amount of charges thereof is that of the signal charges within the maximum amount of charges which can be transferred by the storage region 3a of a signal read-out CCD, the charge exceeding the potential barrier 28 does not exist at all.
摘要翻译：目的：为了增加积分，减少控制电极的数量，从而通过其中在漏极区域和信号电荷读出装置之间提供栅极区域的方法来改善起霜抑制的功能，电极用于驱动栅极区域的电极与用于驱动光电二极管和信号电荷读出装置之间的信号读出区域的电极相同，并且施加相同的控制脉冲。构成：存储电极3a的电势27'低于信号读出栅极区域2a和控制栅极区域7a的势垒的相应高度26'和28'。当光在该状态下入射到光电二极管1a时，二极管1a的电位增加到对应于入射光强度的电位。接下来，如果通过在多晶硅电极22上施加高电平VH来读取存储在光电二极管中的信号电荷的情况下的区域2a，3a和7a的势垒的各个高度为26,27,28，则在光电二极管1a中累积的信号电荷为23-24。当电荷量是由信号读出CCD的存储区域3a传送的最大电荷量内的信号电荷的量时，根本不存在超过势垒28的电荷。

18. 发明专利

JPS57207364A SOLID STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS57207364A
公开(公告)日：1982-12-20
申请号：JP9357481
申请日：1981-06-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To improve the inhibiting effect of brooming largely by coating the surfaces of the semiconductor substrates of each picture element when viewed from the beam incident side with an opaque electrode blank and an opaque thin-film blank in a solid state image pickup element in which a plurality of the picture elements using photoconductor films as light receiving elements are arranged in two-dimensional form. CONSTITUTION:An SiO2 film 9 is shaped to the p type semiconductor substrate 4 while using a p type layer 10 as an underlay, an n type region 13 electrically contacting with a junction diode section 1 and an n type signal storage region 6a are diffused and formed to the surface layer section of the substrate 4 surrounded by the film 9 and shaped in insular form, and a region 5 between the regions 13 and 6a is employed as a reading gate section. A transfer electrode 8 surrounded by an SiO2 film and the opaque thin-films 15 are molded onto the regions 5, 6a, and a plurality of the photoconductor layers 3 and the Mo opaque thin-films 13, which are positioned among the layers 3 and afterward function as metallic electrodes 2', are formed onto the SiO2 film. When the thin-films 13 are etched and the desired metallic electrodes 2' are shaped, the thin-films 15 previously formed are positioned at the exposed sections, and beams are not directly projected to the substrate 4.

19. 发明专利

JPS57138273A DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS57138273A
公开(公告)日：1982-08-26
申请号：JP2410381
申请日：1981-02-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H04N5/335 , H04N5/341 , H04N5/351 , H04N5/357 , H04N5/3728
摘要： PURPOSE:To eliminate a flicker on a screen by making the voltage value of a read pulse, which corresponds to a transfer pulse in a phase where duty is greater among transfer pulses, greater than that of a read pulse which corresponds to a transfer pulse in a phase where duty is smaller. CONSTITUTION:Charges generated at photodetecting element arrays 11-1n composed of photodiodes in a solid image pickup device are read, frame by frame, to vertical scanning circuits 21-2n of BBD with read pulses phiV1R and phiV2R and are transferred in the circuits 21-2n in every horizontal scanning period with transfer pulses phiV1T and phiV2T differing in duty to be led out of a horizontal scanning circuit 4 of a CCD as a signal output. At this time, the voltage value of the pulse phiV2R which corresponds to the pulse phiV2T in a great-duty phase is set greater than that of the pulse phiV1R which corresponds to the pulse phiV1T in a small-duty phase to equalize the signal charge capacities of the photodiodes D1 and D2 in respective phases, thus eliminating a flicker on an image pickup screen.

20. 发明专利

JPS57130467A FLUSH TYPE CHARGE TRANSFER DEVICE 失效
公开(公告)号：JPS57130467A
公开(公告)日：1982-08-12
申请号：JP1615981
申请日：1981-02-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGURA MOTOTSUGU , NAKAYAMA MITSUO , TERUI YASUAKI
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H01L29/76
摘要： PURPOSE:To increase the quantity of transfer signal charge, and to make the titled device proper to a small-sized image sensor by forming the position of the end section of a depletion layer when viewed in the depth direction from the interface of a substrate so that a transition region is deepened more than a storage region in the flush type CCD. CONSTITUTION:Phosphorus ions are implanted in the substrate such as a P type substrate 1, the substrate is thermally treated for a long time, and the N transition regions 14 are shaped, and As is injected and the N storage regions 15 are formed. Gate electrodes 3', 4' consisting of poly Si and wiring 3, 4 for applying clock voltage are shaped onto the substrate structure through a gate film 2, and the CCD is molded. The depth 16 of the junctions of the regions 14 is set to approximately 0.8mum and the depth 17 of the regions 15 to approximately 0.3mum. Accordingly, the potential profiles in the depth direction of the transition regions 14 can be formed in shapes that their gradients are gentle (the left-over of loading is difficult to be formed when the quantity of signal charge is increased). Consequently, the maximum quantity of signal charge can be augmented, and the device having a wide dynamic range and excellent S/N can be manufactured.

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