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    • 14. 发明专利
    • METHOD FOR REMOVING DISSOLVED OXYGEN
    • JPH06106004A
    • 1994-04-19
    • JP5876192
    • 1992-02-13
    • EBARA INFILCOEBARA CORPEBARA RES CO LTD
    • KUBOTA YOKOSAITO TAKAYUKINAKAJIMA TAKESHI
    • B01D19/00C02F1/20C02F1/32C02F1/58
    • PURPOSE:To improve the mixed state of water with a mixed gas of hydrogen and an inert gas in equipment to increase the contact efficiency of hydrogen with oxygen and to efficiently remove dissolved oxygen in water by irradiating ultraviolet rays in the presence of bubbles of the mixed gas of hydrogen and the inert gas. CONSTITUTION:Water to be treated 14 is introduced into equipment from an inflow port 4 that is opened to the upper sidewall of equipment jacket 1. A mixed gas 16 of hydrogen and an inert gas (example: nitrogen) is introduced into a vessel from an inflow port 6 through a diffuser 7. While the water to be treated 14 and the mixed gas 16 are brought into countercurrent contact with each other, ultraviolet rays irradiates inside the vessel from UV lamps 2 inserted into synthetic quartz protecting tubes 3 to improve the mixed state of water with the mixed gas in the vessel, causing the contact efficiency of hydrogen with oxygen to be increased, allowing the dissolved oxygen in water to be efficiently removed, permitting the treated water to flow out from an outflow port 5. The outflow water is introduced into a mixed bed ion exchange column 12 by a pressurizing pump 17 and treated by an ultrafilter 13 to make it pure water 15. A hydrogen contg. gas that has been brought into contact with water is transferred to a purge vessel 9 through a purge pipe 8.
    • 18. 发明专利
    • CLEANING TREATMENT METHOD
    • JPH0458528A
    • 1992-02-25
    • JP16851090
    • 1990-06-28
    • EBARA RES CO LTDEBARA CORPEBARA INFILCO
    • IWASE YOKOSAITO TAKAYUKINAKAJIMA TAKESHISHIMA HIROYUKI
    • B08B3/10H01L21/304
    • PURPOSE:To execute a cleaning treatment which can prevent the surface of a material to be treated such as a semiconductor wafer of the like from being oxidized spontaneously by a method wherein the material to be treated is irradiated with ultraviolet rays in a state that the material to be treated is immersed in water in which hydrogen has been dissolved. CONSTITUTION:Hydrogen 2 is dissolved in water from a water-supply port 1 via a gas-permeable film 4 in a hydrogen dissolution apparatus 3 on the upstream side of a cleaning treatment tank 5. A hydrogen-dissolving water supply port 6, an overflow mechanism 7, a drainage port 8, an ultraviolet light source 9 and a holding mechanism 10 of an object to be treated are fitted to at the cleaning treatment tank 5; and a single-wafer treatment is executed. A low- pressure mercury lamp is used as the ultraviolet light source 9 considering an irradiation wavelength or the like; light radiated from the low-pressure mercury lamp efficiently activates hydrogen in the water near the surface of the object to be treated; and a treatment by the activated hydrogen is executed efficiently. Thereby, it is possible to execute a cleaning treatment which can prevent the surface of the object to be treated such as a semiconductor wafer or the like from being oxidized spontaneously.
    • 20. 发明专利
    • Compound electrolytic polishing apparatus
    • 复合电解抛光装置
    • JP2008198673A
    • 2008-08-28
    • JP2007029898
    • 2007-02-09
    • Ebara Corp株式会社荏原製作所
    • TAIMA YASUSHISUZUKI TSUKURUKODERA AKIRAMAKITA YUJIOBATA ITSUKISAITO TAKAYUKI
    • H01L21/304B23H5/08B24B37/00B24B53/017
    • PROBLEM TO BE SOLVED: To uniformly supply electricity to the surface of a conductive film such as a copper film or the like and reduce a variance of potential distribution on the surface of the conductive film without damaging it, and make it possible to supply electricity to the conductive film in high reliability and conduct compound electrolytic polishing even if a rotary method is adopted. SOLUTION: The compound electrolytic polishing apparatus is provided with a polishing table 100 that has a first electrode 254 connected with one pole of power supply 252 and holds a conductive polishing pad 101; a polishing head 1 that holds a workpiece W by surrounding the outer periphery of the workpiece W having a conductive film with a retainer ring 3 and presses the workpiece W to the polishing face of the polishing pad; a second electrode 264 that is connected with the other pole of the power supply fitted to the opposite surface to the polishing pad of the retainer ring and is in contact with the polishing pad so as to supply electricity to the conductive film of the workpiece through the polishing pad; an electrolyte supply part to supply an electrolyte to the polishing surface of the polishing pad; and a moving mechanism to relatively move the polishing pad and the workpiece held by the polishing head. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了均匀地向诸如铜膜等的导电膜的表面供电,并且减小导电膜的表面上的电位分布的变化而不损坏导电膜,并且使得可以 以高可靠性向导电膜供电,即使采用旋转法也可进行复合电解抛光。 复合电解抛光装置具有:研磨台100,其具有与电源252的一极连接的第一电极254,并保持导电性抛光垫101; 抛光头1,其通过用具有保持环3围绕具有导电膜的工件W的外周来保持工件W,并将工件W按压到抛光垫的抛光面; 与电源的另一极连接的第二电极264,该另一极与安装在保持环的抛光垫相反的表面上,与抛光垫接触,以便通过该工件的导电膜向该导电膜供电 抛光垫; 电解质供给部,其向所述研磨垫的研磨面供给电解质; 以及用于相对移动抛光垫和由抛光头保持的工件的移动机构。 版权所有(C)2008,JPO&INPIT