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11. 发明专利

JPS61234554A MANUFACTURE OF LEADFRAME 失效
公开(公告)号：JPS61234554A
公开(公告)日：1986-10-18
申请号：JP7799385
申请日：1985-04-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , HIROTA SANEYASU , SHIBUYA YOKO , KAWAGUCHI KENJI , SHIMOTOMAI MASAAKI , KUBOZONO KENJI
IPC分类号： H01L23/50 , H01L21/48
摘要： PURPOSE:To make it possible to perform direct wire bonding to a leadframe, whose silver plating and the like are omitted, by applying ultrasonic wave vibration to a pusher, which has a smooth surface at the tip part, pushing the leadframe, and forming a transferred smooth surface. CONSTITUTION:Ultrasonic wave vibration in the lateral direction or in the longitudinal direction is applied to a pusher 12. Under this state the pusher 12 is made to push the surface of a leadframe 10, which includes a part 12a to be stitch-bonded. Then the pushing of the pusher 12 is stopped and it is moved upward. The pushing conditions of the pusher 12 are set as follows: e.g., the amplitude of the ultrasonic vibration is 25-60mum; and the applying pressure P of the pusher 12 is 0.2-2kg/mm . The deformation resistance of a leadframe raw material 10 is suppressed. Very fine irregularities on the surface of the raw material 10 are eliminated. A part to be bonded is smoothed so that its surface roughness becomes 0.3mum or less in R2 conversion. The part to be bonded is softened by the action of the ultrasonic vibration. Thus a transferred smooth surface 11a is formed.

12. 发明专利

JPS61172344A WIRE BONDING PROCESS 失效
公开(公告)号：JPS61172344A
公开(公告)日：1986-08-04
申请号：JP1302585
申请日：1985-01-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBUYA YOKO , HIROTA SANEYASU , MACHIDA KAZUMICHI
IPC分类号： H01L21/60
摘要： PURPOSE:To reduce any effect on a substrate in case of junctioning while preventing any cracking from occurring by a method wherein an end of wire is melted on case of junctioning a high strength wire and an electrode to junction a spherical part of wire and an electrode held at melted or half-melted state. CONSTITUTION:The space between a high strength wire e.g. an end of Cu1 and an electrode 2 mounted on a semiconductor chip 3 is impressed with charging voltage for arcing 10. At this time, the wire 1 apt to oxidation is shielded by inert gas 11 such as Ar and N2 etc. In case of arcing 10, the end of wire 1 is melted to form a spherical part 8 holding melted or half-melted state by the arcing 10 occurring between the spherical part 8 and the electrode 2. The spherical part 8 and the electrode 2 are junctioned as they are by means of ultrasonic oscillation. The hardness may be lowered by the junction of the spherical part 8 held at melted or half-melted state to prevent the hardening due to deformation in case of junctioning with the electrode 2 from occurring. Through these procedures, any cracking on substrate may be prevented from occurring even if relatively vely high strength metallic wire is utilized assuring excellent junction state.

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