专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2001110797A METHOD FOR FORMING NITRIDE FILM 失效
公开(公告)号：JP2001110797A
公开(公告)日：2001-04-20
申请号：JP2000250273
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： C23C16/34 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device suppressing a by- product (dust) in a reaction chamber, improving productivity and making a process condition and the like to be a minimum and to provide a thin-film forming method. SOLUTION: A constitution element (M) except for the nitrogen of a nitride film, reaction gas (M-N-H gas), constituted of nitrogen and hydrogen and ammonia, are used and the reaction gas is generated in a mixing chamber 503 installed on the front side of a reaction chamber 3.

12. 发明专利

JPH08153679A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH08153679A
公开(公告)日：1996-06-11
申请号：JP29449894
申请日：1994-11-29
申请人： MITSUBISHI ELECTRIC CORP , ASAHI GLASS CO LTD
发明人： KINOSHITA YOSHIMI , YOSHIDA KAZUO , KITANO KATSUHISA , KAWAMOTO AKIRA , HAYAMA MASAHIRO , OGURA MASAHISA
IPC分类号： C23C16/50 , H01L21/203
摘要： PURPOSE: To bring a diffusion plate into a proper diffusion state whenever gas flows and to distribute gas uniformly in a blow-out step from an electrode surface by setting a plurality of diffusion plates between a supply port to receive supply of reaction gas from an outside and a blow-out hole of an electrode surface to reduce a flow resistance of gas successively. CONSTITUTION: A plurality of small holes 15 wherethrough gas passes are provided to each of diffusion plates 7a, 7b. A plurality of small holes 15 are opened in an electrode plate 8 to supply gas to a processing chamber 18. Gas supplied from an outside by a gas supply tube 2 is made to flow out of a gas supply port 5 toward a bottom plate 24 through a block 19 and a gas supply tube 20. Upon impinging on the bottom plate 24, the gas spreads inside a diffusion space 9 into the next diffusion space 9 passing through the small hole 15 of the next diffusion plate 7a. After the gas passes through the small hole 15 of the diffusion plate 7b and fills the next diffusion space 9, the gas passes through the small hole 15 of the electrode plate 8 and is blowed out to a processing chamber 18.

13. 发明专利

JPH06260091A INSPECTING METHOD FOR CATHODE-RAY TUBE CONSTITUTING MEMBER AND DEVICE USED FOR ITS IMPLEMENTATION 失效
公开(公告)号：JPH06260091A
公开(公告)日：1994-09-16
申请号：JP3989293
申请日：1993-03-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： HISAOKA YASUSHI , YAMANE YOSHIO , MURAKAMI EISHIN , KINOSHITA YOSHIMI , TOBUSE HIROAKI , YOSHIDA KAZUO , ISHII TAKASHI , KOIZUMI HIROSHI
IPC分类号： H01J9/42
摘要： PURPOSE:To inspect the fluorescent screen of a panel, an electron gun, or a shadow mask which are constituting members of a cathode-ray tube on the same wide inspection items as in the final product inspection before the assembling manufacture of the cathode-ray tube. CONSTITUTION:A container 3 fitted with a panel 1 to be inspected is provided with an exhausting means 6 exhausting the inside of the container 3, an electron gun 8 forming electron beams, a deflection yoke 9 scanning the electron beams, and a sluice valve 27 shutting between the panel 1 and the electron gun 8. The panel 1 completed with the forming process of a fluorescent screen 2 is fitted at the opening section of the container 3 with a shadow mask 15 kept fitted, three electron beams extracted from the electron gun 8 are scanned and radiated, and the same light emitting image as that of a completed tube is formed and inspected. After the completion of the inspection, the electron gun 8 is retreated, the sluice valve 27 is closed, the inside of the container 3 is opened to the atmospheric air, and the panel 1 is replaced.

14. 发明专利

JPH05217912A VAPOR GROWING APPARATUS 失效
公开(公告)号：JPH05217912A
公开(公告)日：1993-08-27
申请号：JP2091592
申请日：1992-02-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHAMA TORU , GOTO YOSHIYUKI , KOMORI HIDEKI , KINOSHITA YOSHIMI
IPC分类号： C23C16/46 , C30B25/10 , C30B25/14 , H01L21/205
摘要： PURPOSE:To obtain an apparatus having high reliability in which a uniformly grown film having a larger area can be formed with high reproducibility. CONSTITUTION:A wafer 2 is supported to a wafer retainer 1. The wafer 2 is heated by a light from an infrared ray lamp 3 from a rear surface side of the wafer 2 through a lamp light transmission window 4, reaction gas 5 is sprayed from a reaction gas supply nozzle 9 surface treated on its inner wall with substance having high emissivity to all the surface of the wafer 2 through a multi-hole nozzle head 6, thereby forming a film on the wafer 2. Simultaneously, the light having a wavelength of about 0.9mum emitted from the surface of the wafer 2 is arrived at a radiation thermometer 11 through the head 6, the nozzle 9 is so water-cooled that the 0.9mum light does not reflect by the substance on the inner surface of the nozzle 9, and an accurate surface temperature of the wafer 2 can be measured. Thus, a uniform film is formed on the surface of the wafer, reliability of an apparatus is enhanced, and high yield of a semiconductor device can be realized.

15. 发明专利

JPH01319681A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH01319681A
公开(公告)日：1989-12-25
申请号：JP15060688
申请日：1988-06-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To form thin films which are dense and have good adhesion and quality by constituting an electrode which is disposed in a reaction chamber and accelerations ion particles to a network shape and irradiating substrate surfaces with light of a short wavelength through this electrode, thereby activating the surfaces. CONSTITUTION:A reaction gas G2 such as N2 is converted to plasma in a plasma generating section 5 and the plasma is introduced from a gaseous plasma feed section 6 into the reaction chamber 3 in which a prescribed degree of the vacuum is maintained by evacuation from a discharge part 7. A gaseous raw material G1 such as SiH4 is introduced simultaneously therewith from a gaseous material feed section 5 into the reaction chamber. Both the gases are brought into a mixed reaction to form the ions. The ion particles are accelerated by a power source 9 via the electrode 81 and are brought into collision against the surfaces of the substrates 1 heated to and held at a prescribed temp. by a heater 2 to form the thin films consisting of Si3N4, etc. The electrode 81 of the above-mentioned thin film forming device is constituted to the network shape and the surfaces of the substrates 1 are irradiated with the light from the short wavelength light source 1 transmitted through said electrode, by which the surfaces are activated. The thin films which are dense, have the good adhesive property to the substrates 1, decrease the impact damage by particles and have good step coverage are obtd. in this way.

16. 发明专利

JPS63184322A THIN FILM FORMING APPARATUS 失效
公开(公告)号：JPS63184322A
公开(公告)日：1988-07-29
申请号：JP1645987
申请日：1987-01-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , KINOSHITA YOSHIMI , ODA AKIO
IPC分类号： H01L21/31 , H01L21/205
摘要： PURPOSE:To cause a large amount of gas particles to collide with a substrate at a high speed, form a dense thin film on the substrate and improve its adhesion and film forming rate by providing an electrode to generate electric field for accelerating plasma gas particles toward the substrate. CONSTITUTION:High speed gas particles in the direction of arrow mark B indicating the flow to the substrate among the gas particle flow directions A and B indicated by the arrow mark increase by application of an electric field across an electrode 8, which is provided opposite to a substrate 1 and heater 2 and is arranged so as to interpose the material gas G1 and second gas G2 supplied from the supply parts 4, 6 with the substrate 1 and the heater 2. Namely, the electric field works on the ionized gas and particles are accelerated to a high speed. In the case of forming a thin film of silicon nitride, N2 is used as the second gas G2, but when a silicon oxide film is to be formed, N2O gas is used in place of N2 gas. When an amorphous silicon is to be formed, Ar gas is used in place of N2 gas, respectively in the similar processings.

17. 发明专利

JPS63166216A SEMICONDUCTOR MANUFACTURING EQUIPMENT 失效
公开(公告)号：JPS63166216A
公开(公告)日：1988-07-09
申请号：JP31411186
申请日：1986-12-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ODA MASAO , KOBAYASHI TOSHIYUKI , KINOSHITA YOSHIMI
IPC分类号： H01L21/31 , H01L21/205 , H01L21/263
摘要： PURPOSE:To form a silicon oxide film and a silicon nitride film, and, further, form an amorphous silicon film with a high speed, by installing an introduction gas feeding inlet independently of a reaction gas feeding inlet, and introducing an introduction gas into a reaction chamber after turning it into plasma. CONSTITUTION:Before a silicon oxide film is formed on a substrate 2, oxygen or nitrogen suboxide 14 is introduced into a reaction chamber 1 after it is supplied to a plasma generating tube 18 and excited with microwave. The oxygen or the nitrogen suboxide in a excited state reacts with silane 5 which is introduced through a reaction gas feeding inlet 5 and decomposed by a carbon dioxide gas laser beam 2, and forms a silicon oxide film on the substrate 2. When a silicon nitride film is formed on the substrate 2, nitrogen or ammonia 14 is supplied and introduced into the reaction chamber 1 after it is excited with microwave. The nitrogen or ammonia in a excited state forms a silicon nitride film in the same manner. When an amorphous silicon film is formed on the substrate 2 with a high speed, argon 14 is supplied, and, in the same process, the amorphous silicon film can be rapidly formed together with the decomposition action of silane 5.

18. 发明专利

JPS6299475A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS6299475A
公开(公告)日：1987-05-08
申请号：JP23953785
申请日：1985-10-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： C23C16/48 , H01L21/205 , H01L21/263
摘要： PURPOSE:To perform film formation of a stabilized thin film for a long period by providing a meshy plate material between a partition glass plate and a protective film and running the protective film on the surface of the plate material. CONSTITUTION:In a thin film forming device, a meshy plate material 16 large in the degree of aperture is provided in an inserted state between a partition glass plate 2 and a protective film 4. The protective film 4 is run on the surface of this plate material 16. By this mechanism, both running impossibility caused because the protective film 4 is stuck on the plate 2 and film formation impossibility caused because a reaction product is stuck on the plate 2 are prevented. Therefore quantity of light reached on a base plate 8 is made much and the stabilized film formation is performed over a long period.

19. 发明专利

JP2009101459A Fluid removal tool 有权
标题翻译：流体移除工具
公开(公告)号：JP2009101459A
公开(公告)日：2009-05-14
申请号：JP2007275036
申请日：2007-10-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MINATOYA TOSHIHIDE , KINOSHITA YOSHIMI
IPC分类号： B23B41/08 , B03C1/00 , B03C1/30 , B23B45/14
摘要： PROBLEM TO BE SOLVED: To provide a fluid removal tool capable of removing fluid out of a container without leaking the fluid into a working space. SOLUTION: The fluid removal tool 100 opens a hole 16 in a tank 13 which contains PCB oil and removes the PCB oil from the tank 13 through the hole 16. The fluid removal tool 100 includes a drill blade 51, a tool body 20, and a drill blade coming-off preventing metal fitting 56. The drill blade includes a top end portion 52 and a shank portion 54. The tool body 20 movably supports the drill blade 51 in an axial direction. A fluid penetration space 21 in which the front end portion 52 is disposed and which opens on a line in the axial direction of the drill blade 51, and a through-hole 28 which is communicated with the fluid penetration space 21 and in which the shank portion 54 is inserted are formed in the tool body 20. The drill blade coming-off preventing metal fitting 56 locks the drill blade 51 to the tool body 20, and regulates movement of the drill blade 51 in a reversal direction. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够将流体从容器中除去而不将流体泄漏到工作空间中的流体移除工具。解决方案：流体移除工具100在容纳有PCB油的罐13中打开孔16，并通过孔16从罐13移除PCB油。流体去除工具100包括钻刀51，工具主体钻头刀片包括顶端部分52和柄部分54.工具主体20沿轴向方向可移动地支撑钻刀51。流体通过空间21，其中前端部52设置并且在钻杆51的轴向上的线上开口;以及通孔28，其与流体穿透空间21连通，并且其中柄插入的部分54形成在工具主体20中。防止金属配件56的钻头刀片将钻刀51锁定到工具主体20上，并且调节钻刀51沿反向的运动。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2007002894A Drive force transmission device 审中-公开
标题翻译：驱动力传动装置
公开(公告)号：JP2007002894A
公开(公告)日：2007-01-11
申请号：JP2005181891
申请日：2005-06-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KINOSHITA YOSHIMI , YOSHIDA KAZUO
IPC分类号： F16H7/02 , B08B5/04 , F16G1/28 , F16H55/38
CPC分类号： F16H57/0402 , F16H55/171
摘要： PROBLEM TO BE SOLVED: To prevent scattering of abrasion powder generated by friction between a timing belt and a timing pulley or to reduce an amount of abrasion powder staying in systems of the timing belt and the timing pulley.
SOLUTION: A drive force transmission device includes a pair of timing pulleys 1 respectively secured to a rotary shaft 12 driven by a rotating machine and a rotary shaft 12 on a follower side which makes a pair with the rotary shaft 12 on the driving side, and the timing belt 4 having teeth engaging with teeth of the timing pulleys 1. The drive force transmission device transmits rotation of the rotary shaft 12 to the timing belt 4 via the timing pulley 1. In the drive force transmission device, the rotary shaft 12 inserted in a rotary shaft hole 7 is provided with exhaust holes 15 through which air can be exhausted by suction, and suction holes 3 are formed in the timing pulley 1 in such a manner that the suction holes 3 extend through the timing pulley 1 from bottom lands 2 between the teeth to the inner periphery of the timing pulley 1. The timing pulley 1 is so secured to the rotary shaft 12 that the suction holes 3 communicate with the exhaust holes 15.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止同步带和正时皮带轮之间的摩擦产生的磨损粉末的散射或减少在同步皮带和正时皮带轮的系统中停留的磨损粉末的量。解决方案：驱动力传递装置包括一对正时皮带轮1，其分别固定在由旋转机械驱动的旋转轴12和从动侧的旋转轴12上，所述旋转轴12与驱动中的旋转轴12成对侧面以及具有与正时皮带轮1的齿啮合的齿的同步皮带4.驱动力传递装置经由正时滑轮1将旋转轴12的旋转传递到同步皮带4.在驱动力传递装置中，插入旋转轴孔7中的轴12设置有排气孔15，空气可以通过抽吸孔排出，并且吸气孔3以规定的滑轮1的方式形成在吸气孔3中，吸气孔3延伸穿过正时皮带轮1 从位于齿之间的底部平台2到同步皮带轮1的内周。正时皮带轮1被固定到旋转轴12，使得吸入孔3与排气孔15连通。版权所有（C）2007 ，J.P O＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式