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11. 发明专利

JPS63232425A FORMATION OF MASK ABSORBER FILM FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS63232425A
公开(公告)日：1988-09-28
申请号：JP6625487
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO , WATAKABE YAICHIRO
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an X-ray absorber pattern film having low internal stress by a Ti-W alloy film with excellent reproducibility by shaping the Ti-W alloy film through a sputtering film formation method using a reactive gas, in which nitrogen gas is added to argon gas, and mixing nitrogen into the Ti-W alloy film. CONSTITUTION:An X-ray absorber pattern film material employing a Ti-W alloy containing Ti is sputtered by a reactive gas, to which Ar gas and N2 gas are added, thus forming a film. The quantity of nitrogen gas mixed into argon gas is kept within a range of 30%-50% at that time. That is, when a Ti-W alloy film is shaped onto a mask substrate through a sputtering film formation method, N2 is mixed into the Ti-W alloy film by using the reactive gas in which N2 gas is added to Ar gas, thus forming an X-ray absorber pattern film by the Ti-W alloy film having an excellent absorption coefficient and low internal stress with superior reproducibility.

12. 发明专利

JPS6286723A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6286723A
公开(公告)日：1987-04-21
申请号：JP22717685
申请日：1985-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/50 , G03F1/84 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form the title mask for X-ray exposure structure with excellent bonding power of X-ray absorbing patterns with a mask substrate as well as long life by a method wherein silicide layers made of absorbing pattern material are junction-formed between X-ray absorbing patterns made of heavy metal and the mask substrate. CONSTITUTION:A silicon nitride film to be a mask substrate 2 is formed on a silicon substrates 1 by pressure-reduced CVD process and then tantalum silicide layers 4 are formed on the overall surface of nitride film 2 by sputtering process etc. Successively tantalum layers to be X-ray absorbing patterns 3 are formed by sputtering process further forming resist layers by spin-coating process. Any specified resist patterns can be formed by exposing and developing the resist layers using electron beams. Finally the tantalum layers and then the silicide layers are etched by reactive ion etching process using the resist patterns as masks to form the specified X-ray absorbing patterns.

13. 发明专利

JP2001156047A MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001156047A
公开(公告)日：2001-06-08
申请号：JP33909799
申请日：1999-11-30
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： SHIMA HIROYUKI , SAWAI HISAHARU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus which can effectively cool the wall surface of a reaction chamber with a simplified device and execute heating, after cooling without requiring a long period. SOLUTION: This semiconductor manufacturing apparatus comprises a chamber 13 to execute the processes to wafers 16 and a nozzle 19 to supply a liquid coolant into a double-structure wall surface 13a of the chamber 13. As the liquid coolant, a coolant which is heated and vaporized under the temperature of the double-structure wall surface 13a during the process, and the double- structure wall surface 13a of the chamber 1 is cooled with the heat of vaporization.

14. 发明专利

JPH11154927A SPECTRUM SPREAD COMMUNICATION EQUIPMENT 失效
公开(公告)号：JPH11154927A
公开(公告)日：1999-06-08
申请号：JP31922997
申请日：1997-11-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： H04L27/01 , H04B7/26 , H04J13/00 , H04W52/30 , H04W52/52 , H04Q7/36
摘要： PROBLEM TO BE SOLVED: To provide an equipment capable of reducing power consumption without the deterioration of an error rate by compensating the amplitude restriction of each channel according to the power of each channel even at the time of executing the amplitude restriction of a multiplex signal through the use of the transmitting power amplifier having a narrow dynamic range. SOLUTION: Through the use of the transmitting power amplifier of a dynamic range, the amplitude restriction of each channel is compensated according to the power of each channel even at the time of executing the amplitude restriction of a multiplex signal. Relating to this spectrum spread communication equipment, a control signal generating circuit 108 generates a control signal compensating the power varying quantity of the transmitting signal of each channel compensating the power varying quantity of the transmitting signal of each channel 1 to N. A volume circuit 110 variably controls the amplitude of the transmission signal of each channel 1 to N so as to compensate based on the control signal.

15. 发明专利

JPH0661182A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPH0661182A
公开(公告)日：1994-03-04
申请号：JP21425792
申请日：1992-08-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , MARUYAMA TAKAHIRO , KAWAI KENJI , HOSHIKO TAKAHIRO
IPC分类号： C23F4/00 , H01J37/02 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a plasma etching device, where electric charge is restrained from being locally accumulated in a fine pattern to prevent notches from being generated, an etching operation can be carried out high in anisotropy and selection rate, and the periphery of a semiconductor wafer can be anisotropically etched well enough. CONSTITUTION:A stage 3 where a semiconductor wafer 2 is placed is arranged in a reaction chamber 1, and a microwave power supply 5 which introduces microwaves into the reaction chamber 1 and a coil 8 which applies a magnetic field are arranged outside the reaction chamber 1. Furthermore, a pulse power supply 18 which applies a pulse bias voltage to the semiconductor wafer 2 through the intermediary of the stage 3 is provided. The pulse power supply 18 eliminates an ion sheath electric field to enable electrons to impinge even on the base of a fine pattern for the neutralization of positive charge, whereby notches are prevented from being generated.

16. 发明专利

JPH05166719A FORMATION OF MULTI-LAYER RESIST FILM 失效
公开(公告)号：JPH05166719A
公开(公告)日：1993-07-02
申请号：JP32844091
申请日：1991-12-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： SATO TETSUO , MIYATAKE HIROSHI , KAWAI KENJI , FUJIWARA NOBUO
IPC分类号： G03F7/11 , G03F7/26 , H01L21/027
摘要： PURPOSE:To stably form a finer resist pattern by improving adhesion between an intermediate layer and an upper layer resist in a multi-layer resist process. CONSTITUTION:Infrared rays 6 or microwaves are applied to the surface of an intermediate layer 4. Alternately, the surface of the intermediate layer 4 is roughened, a silicon film is used as the intermediate layer 4, or, a deposition film which well adheres to a resist is provided between the intermediate layer and an upper layer resist film 5.

17. 发明专利

JPH0461228A PLASMA REACTION APPARATUS 失效
公开(公告)号：JPH0461228A
公开(公告)日：1992-02-27
申请号：JP17240990
申请日：1990-06-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To increase a treatment speed under a low-pressure condition by a method wherein a gas excitation mechanism which excites a reactive gas by emitted light from a plasma region inside a reaction chamber is installed and the excited reactive gas is changed to a plasma. CONSTITUTION:The surface of an optically transparent anode electrode 3 made of quartz is coated with a transparent conductive substance. The inside of the anode electrode 3 is made hollow and is connected to a reaction chamber 1 via very small gas spouts 3a. A reactive gas which has been supplied from a gas supply port 4 is excited, at the inside of the anode electrode 3, by luminous energy from a plasma region inside the reactive chamber 1; after that, it flows into the reaction chamber 1 through the gas spouts 3a. In addition, it is changed to a plasma here by using high-frequency electric power. It can be changed easily to the plasma because it has already been excited at the inside of the anode electrode 3.

18. 发明专利

JPH0456774A PLASMA REACTOR 失效
公开(公告)号：JPH0456774A
公开(公告)日：1992-02-24
申请号：JP17080790
申请日：1990-06-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To stably and uniformly maintain high-density plasma to prevent the damage of a device to be formed on a wafer by providing a magnetic field generating means for generating a minimum magnetic field with the flux density minimized between both parallel plate electrodes in a reaction vessel. CONSTITUTION:A coil 12 for generating a multiple-cusp magnetic field is provided outside a reaction vessel 1, a current is applied to generate a line of magnetic force in the vessel 1, and a minimum magnetic field with the flux density minimized almost at the center of the vessel 1 is generated. The flux density is increased close to the inner wall of the vessel 1, hence the diffusion of the plasma between both electrodes toward the inner wall of the vessel 1 is suppressed, high-density plasma is stably maintained between both electrodes, and further the density of the plasma between both electrodes is almost uniformized and made axysymmetric. Accordingly, a difference in the potential is not caused between a wafer and the wafer surface, and the device to be formed on the wafer is not damaged.

19. 发明专利

JPH0378776B2 失效
公开(公告)号：JPH0378776B2
公开(公告)日：1991-12-16
申请号：JP22717685
申请日：1985-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/50 , G03F1/84 , H01L21/027 , H01L21/30

20. 发明专利

JPH03245522A SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03245522A
公开(公告)日：1991-11-01
申请号：JP4309190
申请日：1990-02-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBANO TERUO , FUJIWARA NOBUO , NISHIOKA KYUSAKU
IPC分类号： G03F7/42 , H01L21/027 , H01L21/30
摘要： PURPOSE:To prevent the charged particles in plasma from reaching a specimen without decreasing the ashing reaction rate by a method wherein, within an ashing device used in the manufacturing process of a semiconductor, the discharge tube parts in the plasma production part is composed of multiple discharge tubes in fine tube diameter so as to prevent the discharge plasma previously produced from scattering over the specimen out of the discharge tube parts. CONSTITUTION:An ashing device is composed of a gas leading-in port 1, a microwaveguide 2, a processing chamber 5, a wafer 6 to be processed, a wafer stage 7, an exhaust port 8, discharge tube parts 9, discharge plasma 10, etc. In such a constitution, the discharge tube parts 9 conventionally in a single number are divided into multiple numbers to be respectively miniaturized. Through these procedures, the plasma 10 produced by impression with mu waves is concentrated only in the parts overlapped with the mu waveguide 2 in the discharge tubes 9 thereby enabling the distance between the plasma 10 and the wafer 6 to be elongated for preventing the charged particles produced in the plasma 10 from reaching the wafer 6. Furthermore, the ashing reaction rate is not to be decreased.

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