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11. 发明专利

JP2001118489A ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR MANUFACTURING 失效
公开(公告)号：JP2001118489A
公开(公告)日：2001-04-27
申请号：JP29595199
申请日：1999-10-18
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HATAI TAKASHI , KOMODA TAKUYA , AIZAWA KOICHI
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide an electric field radiation electron source and method of fabricating it that enhances the electron emission effect with high withstand voltage. SOLUTION: An electric field drift layer 6 is formed on the main surface of an n-type silicon substrate 1, having a surface electrode 7. An ohmic electrode 2 is formed in the inside of the silicon substrate 1. The strong electric field drift layer 6 is obtained by annealing a porous polycrystalline silicon layer formed by anode oxidizing process in an atmosphere of N2O or NO gas at 900 deg.C for an hour. The polycrystalline layer thus obtained has high electron emission efficiency, low defect density, and high withstand voltage compared to the conventional silicon layer.

12. 发明专利

JP2001093406A ELECTRIC FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURING METHOD OF THE SAME 失效
公开(公告)号：JP2001093406A
公开(公告)日：2001-04-06
申请号：JP27152499
申请日：1999-09-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , WATABE YOSHIFUMI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , KONDO YUKIHIRO
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source whose surface is improved in flatness and to provide a manufacturing method of the electric field emission type electron source. SOLUTION: In a field emission type electron source 10, a strong electric field drift region 6 made of oxidized porous polycrystalline silicon and a conductive region 8 made of n-type polycrystalline silicon are spaced away from each other and placed in parallel with each other in a plane of an undoped polycrystalline silicon layer 3 as a semiconductor layer that is formed on one surface of an insulation board 11 of a glass board. Insulation layers 13 made of oxidized silicon films are formed in a stripe manner such that they cover surfaces of the polycrystalline silicon layer 3, an insulation separation region 9, and a conductive region 8 respectively. A conductive thin film 7 is formed over the strong electric field drift region 6 and the insulation layer 13. Pad electrodes 18 are placed on specified parts of the conductive region 8, and pad electrodes 17 are placed on specified parts of the conductive thin film 7.

13. 发明专利

JP2001087554A TELEVISION GAME MACHINE 失效
公开(公告)号：JP2001087554A
公开(公告)日：2001-04-03
申请号：JP27152899
申请日：1999-09-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： WATABE YOSHIFUMI , KONDO YUKIHIRO , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU
IPC分类号： A63F13/52 , A63F13/21 , A63F13/26 , H01J31/12 , A63F13/08
摘要： PROBLEM TO BE SOLVED: To provide a television game machine capable of reducing the weight and saving the space. SOLUTION: This television game machine is provided with an image display unit 100 formed of a flat display panel assembled in a game machine main body 90, a game operating operation unit 103 provided on a table part 90a of the game machine main body 90, and a control unit 101 having a function as a driver for driving the image display unit 100 and for displaying the game image in the image display unit 100 on the basis of the operation information from the operation unit 103. The image display unit 100 is provided with a face plate 30 made of glass, a rear plate 20 arranged opposite to the face plate 30, and a field emission type electron source 10 arranged in the rear plate 20 at an opposite side to the face plate 30, and a frame-like support spacer 40 is arranged between both the plates 30, 20.

14. 发明专利

JP2001061564A TABLE WITH FED 失效
公开(公告)号：JP2001061564A
公开(公告)日：2001-03-13
申请号：JP23906799
申请日：1999-08-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , KONDO YUKIHIRO , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： A47B21/00 , A47B13/08 , A47B37/00
摘要： PROBLEM TO BE SOLVED: To provide a table with a display having a wide viewing angle and capable of being lightweight and consuming little electric power. SOLUTION: This table Ta with an FED(Field Emission Display) is equipped with a table body 40 and an FED 42 incorporated into the top board 41 of the table body 40. The FED 42 has a wider viewing angle than liquid-crystal display and can be made to consume less electric power and made more lightweight than plasma displays, thus a plurality of persons can share information by using the table Ta with the FED as a table in, e.g. a conference room.

15. 发明专利

JP2000340099A FIELD EMISSION TYPE ELECTRON SOURCE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000340099A
公开(公告)日：2000-12-08
申请号：JP14673999
申请日：1999-05-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , OKA NAOMASA , ICHIHARA TSUTOMU , HATAI TAKASHI , WATABE YOSHIFUMI , KONDO YUKIHIRO
IPC分类号： H01J1/312 , H01J9/02 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source capable of emitting electrons from a desired region of a surface electrode and to provide its manufacturing method. SOLUTION: This field emission type electron source 10 is provided with: a p-type silicon substrate 1 of a conductive substrate; n-type regions 8 of diffusion layers formed in a stripe-like form on the main surface side in the p-type silicon substrate 1; electric field drift layers 6 which are formed on the n-type regions 8 with an oxidized porous polycrystalline silicon and in which electrons injected from the n-type regions 8 drift; polycrystalline silicon layers 3 formed between the electric field drift layers 6; and surface electrodes 7 which are formed in a stripe-like form in the direction intersecting with the n-type regions 8 and formed of conductive thin films formed straddling on the electric field drift layers 6 and on the polycrystalline silicon layers 3. A p++ type region 17 of a p-type region having high impurity concentration is formed nearly at the middle part between the n-type regions 8 on the main surface side in the p-type silicon substrate 1.

16. 发明专利

JP2000192295A METHOD FOR CONTROLLING ANODIZATION AND ANODIZATION DEVICE 失效
公开(公告)号：JP2000192295A
公开(公告)日：2000-07-11
申请号：JP36571698
申请日：1998-12-22
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HATAI TAKASHI , KOMODA TAKUYA
IPC分类号： H01L21/3063 , C25D11/32
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling anodization by which a semiconductor layer is made porous neither too much nor too little by anodization and to furnish an anodization device. SOLUTION: An n-type single crystal silicon substrate 3 on the rear side of a polycrystalline silicon thin film 5 to be anodized with a part of the surface dipped in an electrolyte 1 is used as a positive electrode and a platinum dipped in the electrolyte 1 as a negative electrode 4. A constant current is applied between the substrate 3 and negative electrode 4 from a current source 6, and the thin film 5 is made porous in the depth direction from the surface. Meanwhile, the potential difference between the substrate 3 and negative electrode 4 is detected by a voltage detecting element 11, and the current source 6 is turned off by a control part 12 when the potential difference detected by the element 11 begins to decrease to finish the anodization.

17. 发明专利

JPH11132705A DISTORTION DETECTION ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11132705A
公开(公告)日：1999-05-21
申请号：JP29608197
申请日：1997-10-29
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAKAI ATSUSHI , HATAI TAKASHI , SUGIYAMA SUSUMU
IPC分类号： G01L1/14 , G01B7/16 , G01L9/00 , G01L9/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a distortion detection element which can form a minute gap easily and a manufacturing method thereof. SOLUTION: This distortion detection element has a distortion causing plate 1, an upper electrode 3, whose support part 7 is supported by the distortion causing plate 1 and which is formed in such a manner that it overhangs in a rectangular shape in parallel with a substrate from an open end of the support part, and a lower electrode 2 formed on the distortion causing plate 1 so that it has the upper electrode 3 and a gap 4, and a capacitor is constituted of the upper electrode 3 and the lower electrode 2. Furthermore, an insulation film 5 is formed between the upper electrode 3 and the lower electrode 2, and a protective film 6 is formed on the upper electrode 3.

18. 发明专利

JPH10208762A ENERGY GENERATING APPARATUS 失效
公开(公告)号：JPH10208762A
公开(公告)日：1998-08-07
申请号：JP1413597
申请日：1997-01-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SEI MIKIO , HASHIMOTO NOBORU , HATAI TAKASHI , YABUNOUCHI NOBUAKI
IPC分类号： H01M8/00 , H01M8/04 , H01M8/06
摘要： PROBLEM TO BE SOLVED: To provide an energy generating apparatus which can stably generate energy without requiring burning a fossil fuel. SOLUTION: An energy generating apparatus is constituted of a hydrogen generating apparatus 1 to generate hydrogen by decomposing water by heating water, fuel cells 2 which generate electricity by using hydrogen generated in the hydrogen generating apparatus 1 as a fuel source and supply waste heat generated together with electric power to the hydrogen generating apparatus 1, and a heat pump 3 driven by the electric power generated by the fuel cells 2 to supply heat obtained by a heat source to the hydrogen generating apparatus 1 to heat water. Energy is generated based on the heat taken out of the heat source with the heat pump 3.

19. 发明专利

JPH09228055A PRODUCTION OF MICROCRYSTALLINE SILICON CARBIDE THIN FILM AND PIEZORESISTOR MANUFACTURED THEREWITH 失效
公开(公告)号：JPH09228055A
公开(公告)日：1997-09-02
申请号：JP3800896
申请日：1996-02-26
申请人： MATSUSHITA ELECTRIC WORKS LTD , MATSUSHITA ELECTRIC IND CO LTD
发明人： HATAI TAKASHI , SAKAI ATSUSHI , KITAGAWA MASATOSHI
IPC分类号： G01B7/16 , C23C16/32 , C23C16/50 , C23C16/511 , C30B29/36 , G01D5/18 , H01L21/205 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide the production by which the thin film can be formed at a comparatively low substrate temp. while using, as its gaseous raw materials, gaseous materials generally used for a semiconductor. SOLUTION: In this production, SiH4 and CH4 , both of which are used as the gaseous raw materials and H2 used as the gaseous diluent are introduced into a plasma formation chamber 1a through a gas introducing port 1G. At the time of forming a thin film by using a plasma formed in the plasma formation chamber 1a, an AC bias voltage having a frequency within the range of about 1 to 500kHz and a power density within the range of about 0.09 to 0.22W/cm is applied to a substrate 10 that is held on a substrate supporting base 4 in a reaction chamber 1b, from a frequency-variable AC power source AC through a matching box 3.

20. 发明专利

JPH09148589A SEMICONDUCTOR THIN FILM STRAIN GAGE ELEMENT 失效
公开(公告)号：JPH09148589A
公开(公告)日：1997-06-06
申请号：JP30178095
申请日：1995-11-20
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAKAI ATSUSHI , HATAI TAKASHI
IPC分类号： G01L1/22 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To form at a low temperature a strain gage of a thin film wherein an amorphous silicon carbide phase, a silicon crystallite phase and a silicon carbide crystalite phase are mixed with each other, by making the volumetric ratio of the sum of the silicon and silicon carbide crystallite phases to the whole of the thin film specific. SOLUTION: A crystallization coefficient showing the volumetric ratio of the sum of contained crystal phases to the whole of a thin film is defined as follows. The crystallization coefficient of the thin film containing the crystal phases of silicon crystallite and silicon carbide crystallite is regarded as the sum of both the ratio of the peak intensity corresponding to silicon of the thin film to the crystal peak intensity of silicon powder in X-ray diffraction and the ratio of the peak intensity corresponding to silicon carbide of the thin film to the crystal peak intensity of silicon carbide powder in X-ray diffraction. A thin film 10 containing silicon carbide crystallite is formed by CVD, using as its raw-material gas the mixture of a gas containing Si and C such as silane with a doping gas such as diborane. The strain gage factor of the thin film 10 can reach the one not smaller than 30% under the condition of its formation temperature not higher than 400 deg.C and its crystallization coefficient not smaller than 30%.

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