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11. 发明专利

JPH0191428A FORMATION OF MONOMOLECULAR ACCUMULATED FILM 失效
公开(公告)号：JPH0191428A
公开(公告)日：1989-04-11
申请号：JP25009187
申请日：1987-10-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAMURA HIDEJI , OGAWA KAZUFUMI
IPC分类号： H01L21/312 , B05D1/18
摘要： PURPOSE:To contrive the improvement of the adhesion between a substrate and an accumulated film and between films by a method wherein a silane monomolecular adsorption film, which has an energy sensitive group at the respective terminal of its molecules, and a monomolecular film formed by a Langmuir- Blodgett's technique are accumulated and formed on the arbitrary substrate and an energy line is irradiated. CONSTITUTION:A silane surface active agent is used and is made to react on the surface of an Si substrate 1 to form a silane monomolecular adsorption film 2 on the substrate 1 with an SiO2 film formed thereon by a chemical adsorption method. Then, a long chain fatty acid is used to form a monomolecular film 5 on the film 2 by a Langmuir-Blodgett's technique. Here, vinyl groups 6 of the film 5 and vinyl groups 4 of the film 2 are formed in a form to face each other and carboxyl groups 7 of the film 5 are respectively formed in rows on the surface of the substrate. There, by irradiating an energy line on the whole surface of the film, the double bonds of the vinyl groups 4 and 6 bond to one another and crosslinking parts 9 are formed. Thereby, a monomolecular accumulated film having a high adhesion can be formed between the substrate and the accumulated film and between the films.

12. 发明专利

JPS6459834A SUBSTRATE FOR FORMATION OF BUMP FOR TRANSCRIPTION USE 失效
公开(公告)号：JPS6459834A
公开(公告)日：1989-03-07
申请号：JP21685887
申请日：1987-08-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAKITA TETSUO , HATADA KENZO , OGAWA KAZUFUMI , TAMURA HIDEJI
IPC分类号： H01L21/60 , B82B1/00
摘要： PURPOSE:To obtain a monomolecular-level insulating film which is extremely thin and which does not contain any pinhole by using a lower-layer material and an organic monomolecular film containing a chemical bond as a mask for plating a substrate used to form a bump for transcription use. CONSTITUTION:A conductive film 2 as an electrode for plating use is formed on an insulating substrate 1 such as glass, a ceramic or the like. A heat-resisting and insulating inorganic material layer 3 as a mask for plating use is formed on this conductive film 2. Then, an organic monomolecular film 4 is formed on this layer. In order to form the organic monomolecular film, CH2= CH-(CH2)17-SiCl3, CH3-(C2H)30-SiCl3, F3C-(CH2)17-SiCl3 or the like is dissolved in a solvent and is bonded chemically in a liquid phase. An opening 5 is made selectively in this organic monomolecular film 4; this assembly is used as a substrate to form a bump for transcription use.

13. 发明专利

JPS644279A METHOD FOR BUILDING UP MONOMOLECULAR FILM 失效
公开(公告)号：JPS644279A
公开(公告)日：1989-01-09
申请号：JP15820587
申请日：1987-06-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEDA HISAMI , OGAWA KAZUFUMI , TAMURA HIDEJI
IPC分类号： B05D1/20 , H01L21/368 , H01L51/05 , H01L51/40
摘要： PURPOSE:To shorten the time required in the transfer of a monomolecular film to a substrate, by vertically bringing the monomolecular film developed on the surface of water into contact with the substrate subjected to hydrophilic treatment and applying surface pressure to the substrate to form the monomolecular film to the entire surface of the substrate by surface tension. CONSTITUTION:A substrate 9 subjected to hydrophylic treatment is vertically brought into contact with the monomolecular film 6 developed on the surface of water and surface pressure is applied to the monomolecular film by a barrier 3. When the surface pressure is allowed to further rise, the monomolecular film moves along the surface of the substrate 9 wetted with water 10 by surface tension even when the substrate 9 is not moved up and down. As a result, the time required in the transfer of the monomolecular film to the substrate taken for the longest time heretofore can be shortened. Since the entire surface of the substrate is not sunk in water, the shock to the monomolecular film formed on the surface of water is reduced and the monomolecular film high in an orientation property can be transferred to the substrate.

14. 发明专利

JPS642327A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS642327A
公开(公告)日：1989-01-06
申请号：JP15822587
申请日：1987-06-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAMURA HIDEJI , OGAWA KAZUFUMI
IPC分类号： H01L21/283 , H01L21/312
摘要： PURPOSE:To form a protective film after formation of an electrode in ultrahigh density using a single device by a method wherein a silane base or fluorosilane base monomolecular suction film is formed on the surface of a substrate after formation of the electrode. CONSTITUTION:A substrate 1 after formation of an Al electrode 3 is immersed in a solvent containing silane or fluorosilane interfacial activator (2.0X10 -5.0X10 mol/l) (e.g. 80% n-cetane, 12% carbon tetrachloride, 8% chloroform solvent). When a silane solvent is used, SiO3 coupling 5 are formed on the surface of a substrate 1 while respective molecules of a silane interfacial activator are arranged in high density in molecular level on the substrate 1. This monomolecular film 4 has the high level of hydrophobic property to external water molecules 6. When a fluorosilane solution is used, CF3 coupings are arrayed on the surface in high density displaying high level of hydrophobic property and wear resistance.

15. 发明专利

JPS63220420A RECORDING MEDIUM AND PRODUCTION THEREOF 失效
公开(公告)号：JPS63220420A
公开(公告)日：1988-09-13
申请号：JP5330187
申请日：1987-03-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , TAMURA HIDEJI
IPC分类号： G11B5/72 , B05D1/18 , G11B5/64 , G11B5/725 , G11B5/73 , G11B5/84
摘要： PURPOSE:To obtain a pinhole-free org. thin film of a uniform thickness by coating a recording layer with a monomolecular protective film made of a silane surfactant contg. fluorine atoms. CONSTITUTION:A magnetic recording layer 2 is formed on a disk substrate (medium substrate) 1 for magnetic recording by sputtering vapor deposition or other method, and a silane surfactant contg. fluorine atoms. is adsorbed on the layer 2 by total surface chemical adsorption to form a monomolecular protective film 3 made of the silane surfactant. This monomolecular film 5 has fluorine atoms. arranged on the surface and contributes largely toward improving the lubricity of a head, that is, the wear resistance. The film 3 can be formed as a pinhole-free uniform thin film and a magnetic recording medium having high performance can be obtd.

16. 发明专利

JP2558903B2 失效
公开(公告)号：JP2558903B2
公开(公告)日：1996-11-27
申请号：JP34065689
申请日：1989-12-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , MINO NORIHISA , TAMURA HIDEJI
IPC分类号： G02F1/1337

17. 发明专利

JPH08262452A LIQUID CRYSTAL ORIENTED FILM, ITS PRODUCTION AND LIQUID CRYSTAL DISPLAY USING THE FILM 失效
公开(公告)号：JPH08262452A
公开(公告)日：1996-10-11
申请号：JP9821296
申请日：1996-04-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , MINO NORIHISA , TAMURA HIDEJI
IPC分类号： G02F1/1337
摘要： PURPOSE: To produce the uniform and thin liq. crystal oriented film with high efficiency by using a method for chemisorbing a silane surfactant directly on the surface of an electrode in one unimolecular layer. CONSTITUTION: A hydrophilic substrate 1 of glass, quartz, etc., is sufficiently dried, then a silane surfactant is adsorbed on the entire surface by chemisorption and allowed to react, and a unimolecular adsorbed film 2 consisting of the silane surfactant is formed. The thickness of the film 2 formed on the substrate 1 surface in one layer is controlled to 10-30Å. Namely, water-repellent straight carbon chains having different lengths are arranged on the substrate 1 surface in a specified ratio to form the unimolecular film 2. Accordingly, when a liq. crystal is brought into contact with the substrate 1 on which such an oriented film is formed, the liq. crystal molecule intrudes into the gap between the carbon chains of the film 2, and the orientation angle of the liq. crystal is controlled as a whole. Besides, the adsorption material has to contain a group capable of being bonded to -OH group.

18. 发明专利

JP2532577B2 失效
公开(公告)号：JP2532577B2
公开(公告)日：1996-09-11
申请号：JP12640488
申请日：1988-05-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , TAMURA HIDEJI
IPC分类号： G11B5/72 , G11B5/84 , G11B5/85

19. 发明专利

JP2506973B2 失效
公开(公告)号：JP2506973B2
公开(公告)日：1996-06-12
申请号：JP19656988
申请日：1988-08-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , MINO NORIHISA , TAMURA HIDEJI
IPC分类号： G11B7/26 , B05D1/18 , B41M5/26 , G03C1/73 , G11B7/24 , G11B7/244 , G11B7/245

20. 发明专利

JPH0627139B2 失效
公开(公告)号：JPH0627139B2
公开(公告)日：1994-04-13
申请号：JP26204387
申请日：1987-10-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA KAZUFUMI , TAMURA HIDEJI
IPC分类号： B05D1/20 , C08F2/54 , C08F38/00 , C08J5/18 , H01B1/12

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