专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2006162890A Display apparatus 审中-公开
标题翻译：显示设备
公开(公告)号：JP2006162890A
公开(公告)日：2006-06-22
申请号：JP2004353228
申请日：2004-12-06
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YANAGAWA HIROTO , KAWAKITA TETSUO , HATTA SHINICHIRO , ADACHI KATSUMI , NAKAO TAKETOSHI , TAKEZAWA HIROTERU , NAKADA YASUHIKO , YAMADA YOSHINORI , INOUE MAYUMI
IPC分类号： G09F9/00 , H04N5/66
摘要： PROBLEM TO BE SOLVED: To provide a display apparatus in which the surface of a protection panel hardly becomes in a high temperature.
SOLUTION: The display apparatus is provided with: a PDP 50 for displaying an image on a display surface 53; and the protection panel 30 for protecting the display surface 53, wherein the protection panel 30 is provided with glass members 31, 32 and a closed thermally insulated space 34. The thermally insulated space 34 is formed between the glass members 31, 32 whose main surfaces are opposed to each other. Mixed gas containing argon is sealed into the thermally insulated space 34 and pressure in the thermally insulated space 34 is controlled lower than atmospheric pressure. The glass members 31, 32 are arranged at a prescribed interval supported by spacers 35 made of an electromagnetic wave shielding member such as a metallic mesh sheet.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种其中保护板的表面几乎不变成高温的显示装置。解决方案：显示装置设置有：用于在显示表面53上显示图像的PDP 50; 以及用于保护显示表面53的保护面板30，其中保护面板30设置有玻璃构件31,32和封闭的绝热空间34.隔热空间34形成在玻璃构件31,32之间，其主表面相互对立。含有氩气的混合气体被密封到隔热空间34中，并且将隔热空间34中的压力控制为低于大气压。玻璃构件31,32以由诸如金属网片的电磁波屏蔽构件制成的间隔件35支撑的规定间隔布置。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004088122A Thin film transistor and its manufacturing method 审中-公开
公开(公告)号：JP2004088122A
公开(公告)日：2004-03-18
申请号：JP2003357308
申请日：2003-10-17
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKEHASHI NOBUITSU , TSUTSU HIROSHI , KAWAKITA TETSUO , TAKETOMI YOSHINAO
IPC分类号： H01L29/423 , H01L21/265 , H01L21/336 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To form a number of small thin film transistors having an accurate LDD (lightly doped drain) structure in an arrangement on a substrate for use in a liquid crystal display apparatus or the like. SOLUTION: A gate electrode is used as a mask when implanting impurities. In order to obtain the LDD structure, implantation of impurities is carried out in two times. The dimensions of the gate electrode are altered in accordance with the length of the LDD between the first and second implantation. As a means to alter the dimensions of the gate electrode to be used as a mask for implanting impurities, metal oxidation or dry-etching is used. A photo resist needs to be elaborated in order to carry out accurate dry-etching of the gate electrode. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2003229576A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：JP2003229576A
公开(公告)日：2003-08-15
申请号：JP2002027781
申请日：2002-02-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMAMOTO SHINICHI , NISHIO MIKIO , KAWAKITA TETSUO , TSUTSU HIROSHI
IPC分类号： G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for which an OFF-current is reduced and the control of a threshold voltage is facilitated, and the manufacturing method. SOLUTION: The semiconductor device is provided with a thin film transistor having a polycrystalline semiconductor thin film (2) formed on an insulating substrate (100). The semiconductor device is provided with a channel region (80), and a source region (91) and a drain region (92) each positioned on both sides of the channel region (80) inside the semiconductor thin film (100). The channel region (90) is constituted by stacking; a first layer (2a) containing both of the impurities of a first conductivity type and the impurities of a second conductivity type which is opposite to the first conductivity type, thereby the first conductivity type and the second conductivity type are cancelled; a second layer (2b) where either the first conductivity type or the second conductivity type is dominant; and a gate electrode (4) is formed so as to face the first layer (2a) via an insulating film (3). The source region (91) and the drain region (92) are composed of the conductivity type opposite to the conductivity type dominant in the second layer (2b). COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2003076301A Light emitting element and display device using the element 审中-公开
标题翻译：使用元件的发光元件和显示装置
公开(公告)号：JP2003076301A
公开(公告)日：2003-03-14
申请号：JP2001271310
申请日：2001-09-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KAWAKITA TETSUO
IPC分类号： H01L51/50 , G09F9/30 , H01L27/32 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a display device in which clean display having no pixel defect and color irregularity is realized.
SOLUTION: A contact hole is arranged outside a pixel electrode and the hole portion is covered with an insulating wall. Another way of establishing the same purpose is to arrange the pixel electrode and the drain electrode of a thin film transistor on a same layer to eliminate the contact hole. In the above structure, the purpose is completely attained.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种其中没有像素缺陷和颜色不规则的清洁显示器的显示装置。解决方案：接触孔布置在像素电极外部，孔部分被绝缘壁覆盖。建立相同目的的另一种方法是将薄膜晶体管的像素电极和漏电极排列在同一层上以消除接触孔。在上述结构中，完全达到目的。

5. 发明专利

JP2002185009A THIN-FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND TFT ARRAY, LIQUID CRYSTAL DISPLAY DEVICE AND EL DISPLAY DEVICE USING THE SAME 失效
公开(公告)号：JP2002185009A
公开(公告)日：2002-06-28
申请号：JP2000384842
申请日：2000-12-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAKITA TETSUO
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/336 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To realize the theme wherein high precision and high reliability are very important in a display used for a portable apparatus or the like, and especially, improvement in BT resistance property is important, in order to maintain stable characteristics and quality of images. SOLUTION: A peak of degas profile of impurity gas contained in films for constituting a semiconductor layer, a gate insulating film and a gate electrode is shifted to a temperature equal to or higher than a temperature (600 deg.C), which is applied during a forming process. Consequently, interfacial reaction generated in a part between a gate insulating film and a gate electrode is restrained, and BT resistance property is improved. As a result, a TFT array of high reliability can be realized.

6. 发明专利

JP2000349297A THIN FILM TRANSISTOR, PANEL AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000349297A
公开(公告)日：2000-12-15
申请号：JP2000064305
申请日：2000-03-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKEHASHI NOBUITSU , IKUTA SHIGEO , INOUE MAYUMI , KAWAKITA TETSUO , KURAMASU KEIZABURO
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To lessen TFTs, pixels on a substrate, a reflecting plate or the other elements in the number of fabricating processes by a method wherein impurity ions are implanted into a semiconductor laser using a gate electrode of multilayered structure as a mask for the formation of an LDD region. SOLUTION: An a-Si layer is deposited on a glass substrate 10 and then crystallized into a polycrystalline silicon layer. The polycrystalline silicon layer is patterned, and an SiO2 layer 2 is formed on the glass substrate 10 so as to cover the patterned polycrystalline silicon layer. Furthermore, an aluminum layer is formed on the substrate 10 and patterned into a lower gate electrode 42. A channel region 170 is positioned under the gate electrode 42, a region out of lateral regions is covered with an upper gate electrode 43 excluding the region 170, an LDD region 152 is formed between a source region 150 and a channel region 170, and an LDD region 162 is formed between the drain region 160 and the channel region 170.

7. 发明专利

JP2000286423A THIN-FILM TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JP2000286423A
公开(公告)日：2000-10-13
申请号：JP13815299
申请日：1999-05-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAKITA TETSUO , KURAMASU KEIZABURO , IKUTA SHIGEO
IPC分类号： H01L29/786 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To facilitate the etchings of the semiconductor film of a TFT when forming its contact holes, by forming its thicker silicon films than its channel region only on the regions and the vicinities thereof wherewith its source and drain electrodes are contacted. SOLUTION: After forming on the whole surface of a glass substrate 1 an SiO2 film 2 of an undercoat, thicker silicon films 3 than the channel region of a TFT are formed only on the vicinities of the positions of the SiO2 film 2 wherein the source and drain electrodes of the TFT are formed. Then, after forming a silicon film 4 only on the position for forming therein the TFT, a gate insulation film 5 is formed on the whole surface of the glass substrate 1. Subsequently, after forming a gate electrode 6 on the predetermined position of the gate insulation film 5, an interlayer film 7 is so formed as to cover therewith the gate electrode 6. Further, by etching the interlayer film 7 and the gate insulation film 5, contact holes 9 are formed to form source and drain electrodes 10, 11 in the contact holes 9.

8. 发明专利

JPH09326395A FORMING METHOD OF ELECTRODE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09326395A
公开(公告)日：1997-12-16
申请号：JP14403096
申请日：1996-06-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAKITA TETSUO , MATSUMURA KAZUHIKO
IPC分类号： H01L21/288 , C23C18/31 , H01L21/3205 , H01L21/321 , H01L21/60 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To form an Ni protruding electrode which has high temperature-cycle strength, high thermal-shock strength and high corrosion-resistance against Au electroless plating solution by electroless plating. SOLUTION: In order to form a protruding electrode selectively on the Al electrode 10 of a semiconductor chip, an oxide film on the Al electrode 10 of the semiconductor chip is removed and then a Zn film 12 is deposited on the AN electrode 10 by substituting reaction. After that, the semiconductor chip is dipped into electroless plating solution and all the Zn film 12 deposited on the Al electrode 10 is substituted by an Ni film 13. Further, the process in which a Zn film 12 is deposited and the process in which the Zn film 12 is substituted by an Ni film 13 are alternately repeated to obtain an Ni electrode with a required thickness. With this constitution, a highly reliable protruding electrode can be obtained.

9. 发明专利

JPH09222572A MIRROR DEVICE IN SPATIAL LIGHT MODULATOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH09222572A
公开(公告)日：1997-08-26
申请号：JP3098196
申请日：1996-02-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAKITA TETSUO , HATADA KENZO
IPC分类号： G02B26/08 , G02B7/198 , H04N5/74
摘要： PROBLEM TO BE SOLVED: To improve light utilization efficiency of a DMD(digital micro-mirror device). SOLUTION: An elastically deformable belt like hinge part 16 at intervals with a substrate 11 and whose both end parts are held by the substrate 11 is provided on the upside of the substrate 11. A solid and short columnar reflection plate support post 19 held by the hinge part 16 in its one end and extending vertically to the hinge part 16 is provided on the upper surface of the hinge part 16. A beam reflection plate 19 having a flat reflection surface for reflecting a beam is provided on the reflection plate support post 19. An address electrode 20 applied with a voltage generating attractive force or repulsive force between with the beam reflection plate 19 is provided on the substrate 11.

10. 发明专利

JPH0547769A ELECTRONIC COMPONENT AND METHOD OF MOUNTING THE SAME 失效
公开(公告)号：JPH0547769A
公开(公告)日：1993-02-26
申请号：JP19937391
申请日：1991-08-08
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA TAKAYUKI , KAWAKITA TETSUO , HATADA KENZO
IPC分类号： H01L21/52 , H01L21/321 , H01L21/60 , H01L23/50
摘要： PURPOSE:To eliminate defective contacts between the electrodes of a circuit board and bumps which are caused by unsatisfactory parallelism between a compression jig and an LSI chip and the circuit board, expansion of resin and horizontal stresses and provide a chip mounting method free from defective contacts. CONSTITUTION:Bumps, i.e., metal protrusions 5, which are made of metal in which resin 11 is dispersed are formed on the electrodes 2 of a semiconductor device by a dispersion plating method wherein electrolytic plating is performed while electrolyte is mixed with resin particles and stirred. The metal protrusions 5 of the semiconductor device are aligned with electrode wirings 9 which are formed on a circuit board 8 at positions corresponding to the electrodes of the semiconductor device. Insulating resin 12 is applied to bond the semiconductor device to the board and the metal protrusions 5 are electrically connected to the electrode wirings 9.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式