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    • 13. 发明专利
    • ALIGNER
    • JPS5870527A
    • 1983-04-27
    • JP16870281
    • 1981-10-23
    • HITACHI LTD
    • MAEJIMA HIROSHISUZUKI JIYUNNAGATOMO HIROTONISHIZUKA HIROSHI
    • G03F9/00H01L21/027H01L21/30H01L21/68
    • PURPOSE:To prevent damage to a photoresist when a wafer surface is pressed to a leveling pad and to improve the accuracy of an aligner by a method wherein a surface material softer than a photoresist is coated on the surface of a globular or flat plane leveling pad. CONSTITUTION:A wafer 1 applied a photoresist 5 on the surface is horizontally supported by a wafer chuck 2 to permit up and down movement and oscillating motion by an external structure not shown in a drawing. A leveling pad 6 is projected and provided at the lower side of a supporting arm 7 provided at an aligner fixed section. Three pads 6 are positioned at the circumferential direction of the surface section of a wafer 1 to agree the planes connecting respective tip positions at the semiglobular tip sections 6a with a reference plane. Specular finish is done to the surface of the semiglobular base section 8 and a surface material 9 softer than the resist 5 is coated on the surface and furthermore, innumerable near-circular recessed sections 10 are formed on the surface. Damage to the resist 5 occurred when the pads 6 are pressed to the surface of the wafer 1 is prevented.
    • 15. 发明专利
    • FOREIGN MATTER INSPECTOR
    • JPS54101390A
    • 1979-08-09
    • JP727778
    • 1978-01-27
    • HITACHI LTD
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUN
    • H01L21/66G01B11/30G01N21/21G01N21/88G01N21/94G01N21/95G01N21/956
    • PURPOSE:To discriminate foregin matter rapidly and automatically by radiating parallel rays to the object under inspection from its side faces and detecting the reflected light through a polarizing plate. CONSTITUTION:For example, the semiconductor wafer in a cartridge 2 is trnsferred onto a rest table 4 and is fixed at its central part. The laser rays of a parallel ray generator 7 are then radiated parallel to the wafer surface from the side face of the semiconductor wafer 21. While the rest table 4 is being rotated, the reflected light is detected through a photoelectric transducer 15 and the sizes and number of foreign matter are detected based on the reflected light in the state where a polarizing plate 8 is installed at such a rotating angle at which the polarized light is cut by the polarizing plate 8 and only the non-polarized light may be detected. Since the inspection of the reflected light is accomplished by magnifying the wafer surfaces with the lenses 9, 10, 13, the field of view is narrow and therefore the detecting part is moved by moving the rest table 4 with feed driving parts 5, 6 relatively to the light detecting system consisting of the lenses 9, 10, etc., whereby the semiconductor wafer is completely inspected over its entire surface.
    • 16. 发明专利
    • PLASMA CVD APPARATUS
    • JPS5447576A
    • 1979-04-14
    • JP11336277
    • 1977-09-22
    • HITACHI LTD
    • AKIBA MASAKUNINAGATOMO HIROTOSUZUKI JIYUNYOSHIMI TAKEO
    • C23C16/50H01L21/205H01L21/31H01L21/56
    • PURPOSE:To avert flake deposition on the work by making a table for placing on and fixing of the work such as semiconductor wafer 180{754D 12 C invertable and performing plasma CVD in the state where the work fixing face is faced downward. CONSTITUTION:After a bell-jar body 1 is lowered down to a specified position by reverse-rotating a guide post 16 constituting a CVD apparatus, an inverting motor 40 is run forward to turn a jell-jar cover body 21 180 deg.C, bringing the wafer mounting face of a table 34 upward. Next, a wafer 33 is fixed thereto by means of a pin 42 and a lever 43 and the motor 40 is run backward to turn the cover 21 180 deg.C, bringing the wafer mounting face downward. Thereafter, the body 1 is ascended by reverse-rotating the guide post 16to be integrated with the cover body 21 positioned upward. Next, the table 34 and wafer 35 are heated with a heater 35, and the inside is evacuated by using an exhaust pipe 13, thence SiH4, NH3, N2 gases are fed through a nozzle 11. After these, the table 34 is rotated at a low speed by a motor 30 and plasma is produced between the table 34 and ectrode 2.