专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JPS53144282A SEMICONDUCTOR TYPE DISPLACEMENT CONVERTER AND ITS MANUFACTURE 失效
公开(公告)号：JPS53144282A
公开(公告)日：1978-12-15
申请号：JP5918077
申请日：1977-05-21
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , KOSUGI TETSUO , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , H01L29/84 , H01L45/00
摘要： PURPOSE:To ensure an accurate and steady operation by unifying the semiconductor single-crystal thin leaf constituting a diaphragm and the semiconductor block containing a pressure transmitting hollow hole via a solder material of Ge or Gealloy featuring nearly the same heat expansion coefficient, the grid constant and the elasticity coefficiency as the semiconductor material.

12. 发明专利

JPS53109490A SEMICONDUCTOR STRAIN GAUGE 失效
公开(公告)号：JPS53109490A
公开(公告)日：1978-09-25
申请号：JP2504577
申请日：1977-03-07
申请人： HITACHI LTD
发明人： TANABE MASANORI , SHIMADA SATOSHI , NISHIHARA MOTOHISA , YAMADA KAZUJI , MATSUDA YASUMASA , SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , TAKAHASHI YUKIO , KATOUGI KATSUYA , AI MITSUO
IPC分类号： G01B7/16 , G01L1/18 , H01L29/84 , H01L45/00
摘要： PURPOSE:To obtain the strain gauge having a wide variety of permissible temperature range, by taking the (110) plane of crystal as the diaphragm plane and by making the distance from the center of diaphragm different for the strain gauge element toward radial and tangent direction.

13. 发明专利

JPS5354992A SEMICONDUCTOR STRAIN DETECTOR 失效
公开(公告)号：JPS5354992A
公开(公告)日：1978-05-18
申请号：JP13032776
申请日：1976-10-28
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , MATSUOKA YOSHITAKA , NISHIHARA MOTOHISA , KOSUGI TETSUO , SHIMAZOE MICHITAKA , TAKAHASHI YUKIO , OKAYAMA TSUTOMU , SHIMADA SATOSHI
IPC分类号： G01B7/16 , G01L9/04 , H01L29/84 , H01L45/00
摘要： PURPOSE:To reduce the effect of external induction noises ofr detection signls by providing a conductor layer between fixing members which fix piezoelectric elements and the piezoelectric elements in astrain detector which amplifies the signals produced owing to the changes in the resistance of the piezo resistance elements diffusion-Fformed in a semiconductor substrate.

14. 发明专利

JPH0419495B2 失效
公开(公告)号：JPH0419495B2
公开(公告)日：1992-03-30
申请号：JP19245482
申请日：1982-11-04
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , OKAYAMA TSUTOMU , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00

15. 发明专利

JPH0377452B2 失效
公开(公告)号：JPH0377452B2
公开(公告)日：1991-12-10
申请号：JP21717586
申请日：1986-09-17
申请人： HITACHI LTD
发明人： YASUKAWA AKIO , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , G01L9/00

16. 发明专利

JPH028253B2 失效
公开(公告)号：JPH028253B2
公开(公告)日：1990-02-23
申请号：JP15261082
申请日：1982-09-03
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00

17. 发明专利

JPS641733B2 失效
公开(公告)号：JPS641733B2
公开(公告)日：1989-01-12
申请号：JP16412879
申请日：1979-12-19
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , AKAHA RYOZO , SHIMIZU YASUSHI , NEMOTO HIDEYUKI , TANABE MASANORI
IPC分类号： G01L9/00 , G01L9/04 , G01L13/02 , G01L13/06

18. 发明专利

JPS59164934A Pressure and differential pressure detector 失效
标题翻译：压力和差压检测器
公开(公告)号：JPS59164934A
公开(公告)日：1984-09-18
申请号：JP3903983
申请日：1983-03-11
申请人： Hitachi Ltd
发明人： SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00
CPC分类号： G01L9/0064
摘要： PURPOSE:To attain the linearity of pressure/output relation to low pressure by reducing the influences caused by a temp. and excessive pressure, by constituting the titled detector by providing a wiring-exclusive strain generating beam to a wiring electrode while providing no electrode to a strain generating beam for forming a gauge resistor group. CONSTITUTION:Because a wiring electrode 44 can be prevented from being formed on the strain generating beam 36 formed on a gauge resistor 40, the strain generating gauge 36 receives no stress change caused by temp. change and the temp. characteristics thereof are not affected. Even if excessive pressure is applied, because silicon is excellent in elastic characteristics, said beam 36 is perfectly restored when excessive pressure is removed and receives no influence of excessive pressure. In addition, because only the gauge resistor 40 and the aluminum electrode 44 may be formed to the strain generating beams 36, 37, the widths of the strain generating beams 36, 37 can be made narrow. As a result, the ratio occupied by a diaphragm part 38 in a thin strain part becomes large and the linearity of the relation of pressure and output is held to lower pressure.
摘要翻译：目的：通过减少温度的影响，达到压力/输出与低压关系的线性关系。并且通过在向用于形成规格电阻器组的应变产生光束不提供电极的同时向布线电极提供布线应变产生光束来构成标题检测器。构成：由于可以防止在形成在规格电阻40上的应变产生用电子束36上形成配线电极44，所以应变发生量规36不会受到温度的影响。改变和温度其特性不受影响。即使施加过大的压力，由于硅具有优异的弹性特性，所以当过大的压力被去除时，所述梁36完全恢复，不会受到过大的压力的影响。此外，由于只有量电阻器40和铝电极44可以形成到应变发生光束36,37，因此可以使应变发生光束36,37的宽度变窄。结果，薄应变部中的隔膜部38所占的比例变大，压力与输出的关系的线性保持为较低的压力。

19. 发明专利

JPS59155971A High pressure resistant pressure sensor 失效
标题翻译：高耐压传感器
公开(公告)号：JPS59155971A
公开(公告)日：1984-09-05
申请号：JP2932483
申请日：1983-02-25
申请人： Hitachi Ltd
发明人： YASUKAWA AKIO , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
CPC分类号： H01L29/84
摘要： PURPOSE:To prevent a pressure sensor from destruction even when excessive pressure is applied by a method wherein stoppers are provided on the upper and lower sides of the diaphragm of the pressure sensor. CONSTITUTION:A cavity 2 is processed to the back of an Si single crystal disc 1 to form a diaphragm 1a and a stationary part 1b, and semiconductor distortions 3 are formed on the surface of the diaphragm 1a. A stopper 5 is joined on the stationary part 1b as to have a gap between the thin-wall part. A stopper 6 is joined under the stationary part 1b as to have a gap between the diaphragm 1a. According to construction thereof, when excessive pressure to exceed the pressure measurement extent is applied, the diaphragm 1a strikes against the stopper 5 or the stopper 6 to be stopped thereat. Accordingly, the sensor can be prevented from destruction according to excessive pressure.
摘要翻译：目的：为了防止压力传感器在压力过大的情况下被破坏，通过在压力传感器的隔膜的上侧和下侧设置有止动件的方法。构成：将空腔2加工到Si单晶盘1的背面以形成隔膜1a和固定部分1b，并且在隔膜1a的表面上形成半导体变形3。止动件5在固定部1b上连接，以便在薄壁部分之间具有间隙。止动件6在静止部1b的下方接合，以便在隔膜1a之间具有间隙。根据其结构，当施加超过压力测量范围的过大压力时，隔膜1a撞击止动器5或止动件6以在其上停止。因此，可以防止传感器根据过大的压力破坏。

20. 发明专利

JPS58123780A TRANSDUCER FOR STRAIN GAGE OF SEMICONDUCTOR 失效
公开(公告)号：JPS58123780A
公开(公告)日：1983-07-23
申请号：JP594282
申请日：1982-01-20
申请人： HITACHI LTD
发明人： KUGAYA TAKASHI , OKAYAMA TSUTOMU , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , H01L29/84
摘要： PURPOSE:To compensate temperature in the strain gage for the semiconductor by using a diffusion resistor formed to the supporting section of the strain gage for the semiconductor as a temperature sensing element. CONSTITUTION:An N type silicon substrate 21 is constituted by a diaphragm section 21A and the supporting section 21B. Resistors Rc, Rt for a strain gage bridge consisting of the P type diffusion layer are formed onto the surface of the diaphragm section 21A, and a resistor RG for temperature compensation composed of the P type diffusion layer is formed to the supporting section 21B. The strain gage for the semiconductor is prepared by a resistance net Rs for detecting currents, the bridge 2, a differential amplifier 4 controlling voltage applied between the resistance net Rs so that it reaches constant value Es, and a transistor 3 by using such a substrate 21. Accordingly, temperature can be compensated by a circuit consisting of the resistor RG incorporated into the sensor of the strain gage for the semiconductor and another simple constitution.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式