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11. 发明专利

JPH10140349A FILM FORMING METHOD 失效
公开(公告)号：JPH10140349A
公开(公告)日：1998-05-26
申请号：JP31478697
申请日：1997-11-17
申请人： HITACHI LTD
发明人： KISHIMOTO SATOSHI , KOBAYASHI HIDE , OKAMOTO AKIRA , SHIMAMURA HIDEAKI , TSUJIKU SUSUMU , NISHITANI EISUKE , YONEOKA YUJI
IPC分类号： C23C14/54 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a film formation method which make it possible to obtain films having good quality by executing the exact temp. monitor and control of substrates in vacuum and managing substrate temps. SOLUTION: The temp. of a wafer 10 under process is monitored by measuring the radiation intensity from the wafer 10 by IR radiation thermometers 14, 15 in a sputtering film forming chamber 4 and a substrate temp. control chamber 3 for heating or cooling the wafer prior to film formation. At this time, a mirror finished surface 20 is installed in proximity to the surface to be formed with the film of the wafer 10 before film formation placed on a calibration stage 5 and a substrate temp. control stage 6, by which the IR radiation characteristics exhibited by the wafer 10 under the metallic film formation in a chamber 4 are simulated. The radiation rate of the wafer 10 for later radiation temp. measurement in the chambers 3, 4 is thereby determined beforehand in a calibration chamber 2. Namely, the IR sensitivity correction value necessary for the IR temp. measurement during and after the film formation is previously acquired and the substrate is exactly subjected to the temp. management.

12. 发明专利

JPH1048051A SUBSTRATE TEMPERATURE MEASURING METHOD 失效
公开(公告)号：JPH1048051A
公开(公告)日：1998-02-20
申请号：JP20340896
申请日：1996-08-01
申请人： HITACHI LTD
发明人： KISHIMOTO SATOSHI , SHIMAMURA HIDEAKI , KOBAYASHI HIDE , YONEOKA YUJI
IPC分类号： G01J5/06 , G01J5/00
摘要： PROBLEM TO BE SOLVED: To reduce the number of apparent apertures of a photo-guiding path and to prevent the incident stray light reflected by a wafer surface from reaching a radiation thermometer, by installing a tube having a black inner face, on a part of the photo-guiding path. SOLUTION: A quartz bar 4, a blackbody path 5 and a radiation thermometer 7 are closely installed in series through an opening window 3 of a heat stage 2 on which a wafer 1 is to be placed, so that the stray light does not enter. The length t and the maximum inner diameter ϕ of the blackbody path 5 are set, so that the length t of the blackbody path 5, the maximum inner diameter ϕof the blackbody path 5, the refraction factor n of the quartz bar 4, and the minimum incident angle θ to the photo-guiding path, of the stray light radiation from a heater, reflected by the wafer 1, have the certain relationship. The emissivity of the inner face of the blackbody path 5 is almost 1, so that the infrared ray is emitted from the blackbody itself, and entered into the radiation thermometer 7 as the stray light. For the sake of this, the blackbody path is cooled in a blackbody path cooling part 6, so that the radiation of the inner face of the blackbody path 5 can be made sufficiently smaller than the radiation from the wafer 1.

13. 发明专利

JPH09268367A THIN FILM FORMING DEVICE AND METHOD BY PLASMA TREATMENT 失效
公开(公告)号：JPH09268367A
公开(公告)日：1997-10-14
申请号：JP7847196
申请日：1996-04-01
申请人： HITACHI LTD
发明人： YAJIMA AKIRA , KOBAYASHI HIDE , SHIMAMURA HIDEAKI , SHIDA HIROYUKI
IPC分类号： C23C14/00 , C23C14/34 , C23C16/50 , H01L21/203 , H01L21/205 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming device by improved plasma treatment in which the thin film high in quality is formed while suppressing the production of peeled foreign matter in the film forming process, and thereby, the frequency of cleaning in a film forming chamber is reduced to improve the working ratio. SOLUTION: Undercoating film 611 preventing the generation of peeling of deposited film by residual stress in such a manner that the residual stress of deposited film 612 formed in a region where needless film is deposited by plasma treatment when it grows up to a reference film thickness is relaxed to the peeling strength of the joint boundary with the deposited film or below by the generation of the plastic strains of itself is provided at least on deposition preventing shield board 609 in a vacuum chamber (film forming chamber). As the undercoating film 611 e.g. superplastic alloy coating film of Al or Zn, CuAl2 film or the like whose plastic deformation is regulated to at least >=50% are preferably used.

14. 发明专利

JPH07283090A METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH07283090A
公开(公告)日：1995-10-27
申请号：JP7105094
申请日：1994-04-08
申请人： HITACHI LTD
发明人： SUZUKI MIWAKO , NISHITANI EISUKE , KOBAYASHI HIDE , UCHIDA NORIHIRO , CHIBA NATSUYO , SHIMAMURA HIDEAKI
IPC分类号： G02B6/00 , H01L21/02 , H01L21/26
摘要： PURPOSE:To enhance the uniformity in the temperature distribution of a substrate by specifying the relationship of the distance between the centers of light spots and the distance between the end face of an optical fiber and a substrate. CONSTITUTION:Means for heating a semiconductor substrate in a processing system including a thermal processing system, i.e., a light source 300, is disposed separately from a clean room 200 housing a processing system 100. The light source 300 comprises a heating lamp 310 radiating optical energy only of such wavelength as required for heating a substrate and the light is condensed and introduced through an optical fiber 130 to the processing system 100. In this regard, the distance between the end face of the optical fiber and the substrate is set equal to 1.1 times or more of the distance between the light spots. This method makes uniform the temperature distribution on the substrate and realizes smooth processing on the semiconductor substrate.

15. 发明专利

JPH0627323B2 失效
公开(公告)号：JPH0627323B2
公开(公告)日：1994-04-13
申请号：JP24387083
申请日：1983-12-26
申请人： HITACHI LTD
发明人： SAITO YUTAKA , TATEISHI HIDEKI , KOBAYASHI HIDE , AIUCHI SUSUMU , SUZUKI YASUMICHI , SAKATA MASAO , SHIMAMURA HIDEAKI , KAMEI TSUNEAKI
IPC分类号： C23C14/36 , C23C14/34 , C23C14/35 , C23C14/46 , H01J37/34 , H01L21/203 , H01L21/31

16. 发明专利

JPH05160246A STAGE FOR PLACING WAFER 失效
公开(公告)号：JPH05160246A
公开(公告)日：1993-06-25
申请号：JP32024991
申请日：1991-12-04
申请人： HITACHI LTD
发明人： YONEOKA YUJI , OKAMOTO AKIRA , KOBAYASHI HIDE , SHIMAMURA HIDEAKI
IPC分类号： H01L21/324 , H01L21/68 , H01L21/683
摘要： PURPOSE:To accurately measure a temperature during heating by gas heating medium by forming it of a gas sealing plate, a fine circular gold wire and a sealing surface of ceramics. CONSTITUTION:A temperature of a wafer 2 in vacuum is measured from a rear surface of an infrared ray thermometer 1 through a gas shielding plate 7 introduced into a pore 5 formed at a center of a heat block 3. In this case, the plate 7 is sealed with a fine circular gold wire 8. The other surface of the wire 8 is formed of a mirror-polished surface 9 of alumina. Thus, since a heating stage is formed of the plate 7, the wire 8 and the alumina 9, the temperature of the wafer 2 at the time of heating with gas can directly be measured. Accordingly, if a wafer which does not reach a desired temperature is discovered, it is further additionally heated or can be removed as a defective product from the beginning.

17. 发明专利

JPH04116828A DEVICE AND METHOD FOR FORMING WIRING FILM 失效
公开(公告)号：JPH04116828A
公开(公告)日：1992-04-17
申请号：JP23562490
申请日：1990-09-07
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , YAJIMA AKIRA , OKAMOTO AKIRA , YONEOKA YUJI , KOBAYASHI HIDE
IPC分类号： H01L21/3205 , H01L21/203 , H01L21/66 , H01L23/52 , H01L23/522 , H01L23/538
摘要： PURPOSE:To improve the degree of crystal orientation of a thin film and at the same time, to make it possible to make large the grain diameter of crystal grains by a method wherein a first layer wiring film is formed on a wafer as a seed film in a low-residual gas atmosphere and the first layer wiring film is kept at a temperature higher than the recrystallization temperature of the first layer wiring film. CONSTITUTION:A silicon wafer 4 to be formed with a film is introduced in a load lock chamber 101 at the right end part of a wiring film formation device to evacuate to a vacuum state at a prescribed vacuum degree, then, the wafer 4 is cooled on a cooling stage 200 to a prescribed temperature via a heating chamber 1 and a sputter etching chamber 111 and thereafter, a first layer film which is an Al thin film is formed on the wafer 4 in a first sputter film-forming chamber 201. At this time, the wafer is held at a temperature of 1/2 or lower of the melting point of a first layer wiring film material to form the thin first layer film, this first layer film is heated at a temperature, which is higher than the recrystalline temperature of the first layer film and is lower than the melting point of the first layer wiring film material, and the grain diameter of crystal grains is grown greatly. Then, the crystalline orientation of the thin first layer film is diagnosed with a high-speed electron beam in a treating chamber 202.

18. 发明专利

JPH0432570A SPUTTERING DEVICE 失效
公开(公告)号：JPH0432570A
公开(公告)日：1992-02-04
申请号：JP13819390
申请日：1990-05-30
申请人： HITACHI LTD
发明人： KOBAYASHI HIDE , ARAI TOSHIYUKI , OKAMOTO AKIRA , KAWASAKI YOSHINAO , SHIMADA KAZUYOSHI , MURATA YUKIO , KENMOCHI AKIHIRO , KAWAHITO MICHIYOSHI , SHIMAMURA HIDEAKI
IPC分类号： C23C14/34 , C23C14/52 , C23C14/56
摘要： PURPOSE:To attain heating with high uniformity and to bake a substrate with good reproducibility by disposing the substrate in parallel proximity to a ceramic plate which radiates far IR components. CONSTITUTION:The substrate 100 which is transported to a position 20 along a substrate transporting surface 13 of a transporting chamber 12 in a baking chamber of the sputtering device is transferred to a heating position 21 by a pusher 14. A vacuum partition plate 15 is then risen and the atmosphere of the transporting chamber 12 and the baking chamber is isolated. The inside of the baking chamber is then evacuated to a vacuum from a discharge port 16. This substrate is positioned on the front surface of the ceramic heater 17. This ceramic heater 17 contains a heater wire and radiates >=10mum far IR rays. The substrate is then heated while the substrate surface is observed by an IR radiation thermometer from a peep window 18. The substrate 100 is subjected to the baking treatment in this way without contaminating the vacuum atmosphere.

19. 发明专利

JPS62260055A SPUTTERING TARGET 失效
公开(公告)号：JPS62260055A
公开(公告)日：1987-11-12
申请号：JP10205186
申请日：1986-05-06
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , KAWAHITO MICHIYOSHI , SAKATA MASAO , KOBAYASHI HIDE , KAMEI TSUNEAKI
IPC分类号： C23C14/34
摘要： PURPOSE:To obtain the title target having especially an excellent stepped part covering characteristic and used for a planar magnetron-type sputtering device by providing a groove determined by the radius of gyration of an electron and the thickness of the cathode dark space of electric discharge. CONSTITUTION:The movement of an electron in the space surrounded with >=1 couple of opposed side wall faces 102 formed with protrusions 101 and the sputter face 201 of a target 1 against the directivity of sputtered particles are shown in the figure. Namely, a tunnel-like magnetic field is generated on the face 201, the opposed faces 102 are arranged in the direction to traverse a magnetic flux, and the potentials of the target 1 to be used as a cathode in sputtering and the protrusions 101 are equalized. The space forms a closed loop on the target 1 along the tunnel of the magnetic flux. The electron in the space repeats spiral, drifting, and repulsing movements in relation to the magnetic flux and electric field. When the electron approaches the side wall 102 or target 1, the electron is repulsed as a result of the high negative potentials of the side wall face 102, the target 1 and pushed back to the central part of the space, and hence further stronger plasma is continuously generated.

20. 发明专利

JPS627855A SPUTTERING DEVICE 失效
公开(公告)号：JPS627855A
公开(公告)日：1987-01-14
申请号：JP14653185
申请日：1985-07-05
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , SAKATA MASAO , KAWAHITO MICHIYOSHI , KOBAYASHI HIDE , ABE KATSUO , KAMEI TSUNEAKI , KASAHARA OSAMU , MIZUKAMI KOICHIRO , NAKADA KENSUKE
IPC分类号： C23C14/36 , C23C14/35 , H01L21/203 , H01L21/285 , H01L21/31
摘要： PURPOSE:To provide a planar magnetron sputtering device with which a film conforming to the micro-underlying shape on a substrate is formed by forming plural pieces of recesses on the surface of a target and providing slit members between the substrate and target. CONSTITUTION:Plural pieces of vertical holes 102 are formed to an approximately cylindrical shape onto the surface of the target 100 to be subjected to sputtering and are enclosed with a side wall 103 and a bottom wall 104. A permanent magnet 140 below the target 100 forms the magnetic field perpendicular to the electric field formed in the direction perpendicular to the horizontal plane 105 of the target 100 and the wall 104. Only the particles having the components in the flying direction within the specified range among the spatter particles released in the holes 102 are thereby flown toward the substrate 120 to be formed with the film. The slit members 130 consisting of plural sheets of parallel slit plates 132 are provided in the position associated with the holes 102 just before the substrate 120. The slit plates prevent the incidence of the particles having the large incident angle with respect to the direction perpendicular to the substrate 120 among the spattern particles released on the surface 150 on the substrate 120.

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