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11. 发明专利

JP2007266851A Superconductor filter device and its forming method 有权
标题翻译：超导体滤波器及其形成方法
公开(公告)号：JP2007266851A
公开(公告)日：2007-10-11
申请号：JP2006087432
申请日：2006-03-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AKASEGAWA AKIHIKO , KURIHARA KAZUAKI , KONDO MASAO , HIDA KATSUHARU
IPC分类号： H01P1/203 , H01P1/205 , H01P1/208
摘要： PROBLEM TO BE SOLVED: To provide a superconductor filter device which can perform fine adjustments of a center frequency and a bandwidth.
SOLUTION: The superconductor filter device is provided with a first dielectric substrate (11), a resonator pattern (12) of a two dimension circuit type formed of a superconductor material on the first dielectric substrate, a second dielectric substrate (14) with a conductor pattern (15) which positions upper of the resonator pattern and generates coupling, and a piezoelectric element (16) inserted between the first and the second dielectric substrates.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以执行中心频率和带宽的微调的超导体滤波器装置。超导体滤波器装置设置有第一电介质基板（11），由第一电介质基板上的超导体材料形成的二维电路型谐振器图案（12），第二电介质基板（14）具有位于谐振器图案的上部并产生耦合的导体图案（15），以及插入在第一和第二电介质基板之间的压电元件（16）。版权所有（C）2008，JPO＆INPIT

12. 发明专利

JP2007266538A Semiconductor storage device and method of manufacturing same, and data write method and data read method for same 有权
标题翻译：半导体存储装置及其制造方法以及数据写入方法和数据读取方法
公开(公告)号：JP2007266538A
公开(公告)日：2007-10-11
申请号：JP2006092999
申请日：2006-03-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/10 , H01L27/105 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide an excellently high-speed semiconductor storage device having superior storage memory holding characteristics, and to provide a method of manufacturing the same, as well as a method of writing data to the same, and a method of reading data from the same.
SOLUTION: The semiconductor storage device 1 comprises: a lower electrode 55 formed on a semiconductor substrate 22; an electromagnetic effect layer 53 that is formed on the lower electrode 55 and shows an electromagnetic effect; an upper electrode 51 formed on the electromagnetic effect layer 53; and a magnetic storage layer 57, where voltage is applied between the upper and lower electrodes 51, 55 and the direction of residual magnetization is decided, based on the magnetization direction of the electromagnetic effect layer 53 aligned in a specified direction.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供具有优异的存储存储器保持特性的卓越的高速半导体存储装置，并提供其制造方法，以及向其写入数据的方法，以及方法从相同的数据读取。解决方案：半导体存储装置1包括：形成在半导体衬底22上的下电极55; 电磁效应层53形成在下电极55上并显示电磁效应; 形成在电磁效应层53上的上电极51; 以及基于沿指定方向排列的电磁效应层53的磁化方向，决定在上下电极51,55之间施加电压和剩余磁化方向的磁存储层57。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2007266407A Non-volatile memory and method of manufacturing same 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：JP2007266407A
公开(公告)日：2007-10-11
申请号：JP2006090972
申请日：2006-03-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory that suppresses the leakage current of a ferroelectric substance and can be used stably, and to provide a method of manufacturing the non-volatile memory. SOLUTION: The memory cell of the non-volatile memory 1 comprises: a cell selection transistor 5, and a ferroelectric capacitor 2 connected to the cell selection transistor 5 electrically. The ferroelectric capacitor 2 comprises: a lower electrode 15; a ferroelectric film 17 that is formed on the lower electrode 15, and contains a magnetic element; and an upper electrode 19 formed on the ferroelectric film 17. The non-volatile memory 1 is formed by applying a magnetic field of 10 kOe in a direction vertical to the surface of the ferroelectric film 17 and heating to 400°C. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供抑制铁电体物质的漏电流的非易失性存储器，能够稳定地使用，并提供制造非易失性存储器的方法。解决方案：非易失性存储器1的存储单元包括：电池选择晶体管5和与电池选择晶体管5电连接的铁电电容器2。铁电电容器2包括：下电极15; 形成在下电极15上并含有磁性元件的铁电体膜17; 以及形成在强电介质膜17上的上电极19.非易失性存储器1通过在垂直于铁电体膜17的表面的方向上施加10kOe的磁场并加热至400℃而形成。版权所有（C）2008，JPO＆INPIT

14. 发明专利

JP2007108515A Optical element and method for manufacturing same 审中-公开
标题翻译：光学元件及其制造方法
公开(公告)号：JP2007108515A
公开(公告)日：2007-04-26
申请号：JP2005300526
申请日：2005-10-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AOKI TAKESHI , KONDO MASAO , KURIHARA KAZUAKI , KUWABARA MAKOTO
IPC分类号： G02F1/01 , G02B1/02 , G02B6/12 , G02B6/13 , G02B26/00 , G02F1/017
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/1225
摘要： PROBLEM TO BE SOLVED: To obtain large modulation at a transmission wavelength in a simple and fine configuration by using a photonic crystal. SOLUTION: An optical element 10 comprises an optical waveguide 1 made of a piezoelectric material, a photonic crystal structure 2 disposed in the waveguide 1, a pair of control electrodes 3, 4 formed holding the upper and lower faces of the optical waveguide 1 and applying a voltage to the waveguide 1, and a support 5 disposed at both ends of the lower control electrode 4. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过使用光子晶体，以简单和精细的配置在透射波长处获得大的调制。解决方案：光学元件10包括由压电材料制成的光波导1，设置在波导1中的光子晶体结构2，形成为保持光波导的上表面和下表面的一对控制电极3,4 1，并向波导1施加电压，以及设置在下部控制电极4的两端的支撑件5.版权所有（C）2007，JPO＆INPIT

15. 发明专利

JP2006126296A Optical deflection element and optical switch 有权
标题翻译：光学偏转元件和光开关
公开(公告)号：JP2006126296A
公开(公告)日：2006-05-18
申请号：JP2004311365
申请日：2004-10-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： AOKI TAKESHI , KONDO MASAO , KURIHARA KAZUAKI
IPC分类号： G02F1/313
CPC分类号： G02F1/313 , B82Y20/00 , G02B6/1225 , G02B6/3546 , G02F2202/32
摘要： PROBLEM TO BE SOLVED: To attain an optical deflection element contributing to further contraction and high integration of a device size by using a photonic crystal to deflect light at a desired large deflection angle and precisely controlling a deflection angle at a wide range at a high speed. SOLUTION: The optical deflection element 10 comprises a prism electrode 4 provided on an optical waveguide 3, a first photonic crystal structure 5 provided forward passing the prism electrode 4 by light in a light traveling direction, a control electrode 6 provided so as to be opposed to an opposite electrode layer 2 through the optical waveguide 3 on the first photonic crystal structure 5, and a second photonic crystal structure 7 provided sideward of the prism electrode 4 in parallel to the light advancing direction. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得通过使用光子晶体来进一步收缩和高集成器件尺寸的光偏转元件，以以期望的大偏转角偏转光并且在宽范围内精确地控制偏转角，高速。解决方案：光偏转元件10包括设置在光波导3上的棱镜电极4，通过光行进方向的光向前穿过棱镜电极4设置的第一光子晶体结构5，设置为通过第一光子晶体结构5上的光波导3与相对电极层2相对，以及与光前进方向平行地设置在棱镜电极4的侧面的第二光子晶体结构7。版权所有（C）2006，JPO＆NCIPI

16. 发明专利

JP2006041425A Semiconductor device having ferroelectric capacitor and manufacturing method therefor 有权
标题翻译：具有电磁电容器的半导体器件及其制造方法
公开(公告)号：JP2006041425A
公开(公告)日：2006-02-09
申请号：JP2004223051
申请日：2004-07-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO MASAO
IPC分类号： H01L27/105 , H01L21/8246
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a ferroelectric capacitor that retains a large polarization amount, has low-leakage current, and moreover is structured by a thinner ferroelectric film.
SOLUTION: In a semiconductor device, on which a ferroelectic capacitor is formed with a structure of a lower electrode 24E and upper electrode 27E on a semiconductor substrate and a ferroelectric film 26c sandwiched by the lower electrode 24E and the upper electrode 27E, Nb ions are contained on the side of the ferroelectric film 26C at an interface between the upper electrode 27E, at least as one electrode of the ferroelectric capacitor and the ferroelectric film 26C, the Nb ion that is different from the main ingredient and composition of the ferroelectric substance, which are positive ions having a larger valence, as compared to the positive ion composing the main ingredient.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有保持大的极化量的铁电电容器的半导体器件，具有低漏电流，而且由更薄的铁电体膜构成。解决方案：在半导体器件中，在半导体衬底上形成具有下电极24E和上电极27E的结构的铁电电容器和由下电极24E和上电极27E夹持的铁电体膜26c，在铁电体膜26C的上侧电极27E，至少与铁电体电容器的一个电极和强电介质膜26C之间的界面，不同于主要成分的Nb离子和与构成主要成分的正离子相比，是具有较大价态的正离子的铁电物质。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2005294452A Thin film laminate, actuator element using the same, filter element, ferroelectric memory and optical deflection element 审中-公开
标题翻译：薄膜层压板，使用其的执行器元件，过滤器元件，电磁记忆和光学偏移元件
公开(公告)号：JP2005294452A
公开(公告)日：2005-10-20
申请号：JP2004105975
申请日：2004-03-31
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO MASAO , KURIHARA KAZUAKI
IPC分类号： H01L27/04 , G02F1/035 , G02F1/05 , H01L21/00 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L27/105 , H01L29/51 , H01L29/78 , H01L29/84 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/317 , H01L41/319 , H01L41/39 , H03H9/02 , H03H9/145 , H03H9/25 , H01L41/24
CPC分类号： G11C11/22 , G02F1/035 , G02F1/0508 , G11C11/221 , H01L21/31691 , H01L29/516 , H01L29/78391 , H01L41/0815 , H01L41/1876 , H01L41/316 , H01L41/318 , H01L41/319 , H03H9/02574
摘要： PROBLEM TO BE SOLVED: To provide a thin film laminate where a thin film having superior crystallinity, sufficient piezoelectricity, electrostriction property, ferroelectricity or electro-optical effect can epitaxially be grown, and to provide an actuator element using the thin film laminate, a filter element, a ferroelectric memory and an optical deflection element. SOLUTION: The thin film laminate 10 has a single crystal substrate 11, and a zirconium oxide film 12, a C-rare earth structure film 13 and a simple perovskite structure film 14, which are sequentially laminated on the single crystal substrate 11 with epitaxial growth. The C-rare earth structure film 13 of rare earth oxide having a crystal structure of a C-rare earth structure (cubic join) is formed on the zirconium oxide film 12. Thus, the simple perovskite structure film 14 consisting of metal oxide of the crystal structure having a simple perovskite lattice can be formed in plane orientation (001). The simple perovskite structure film 14 is rotated with respect to the C-rare earth structure film 13 by 45° with a crystal growth direction as a rotation axis so as to grow it. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供薄膜层压体，其中可以外延生长具有优异的结晶度，足够的压电性，电致伸缩特性，铁电性或电光效应的薄膜，并且提供使用薄膜层压体的致动器元件滤波器元件，铁电存储器和光学偏转元件。解决方案：薄膜层压体10具有单晶衬底11和依次层压在单晶衬底11上的氧化锆膜12，C稀土结构膜13和简单的钙钛矿结构膜14 外延生长。在氧化锆膜12上形成具有C型稀土结构（立方结）的晶体结构的稀土类氧化物的C型稀土类结构膜13。因此，由金属氧化物构成的简单的钙钛矿结构膜14 具有简单的钙钛矿晶格的晶体结构可以以平面取向（001）形成。简单的钙钛矿结构膜14相对于C稀土结构膜13旋转45°，以晶体生长方向为旋转轴，使其生长。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2014220419A 電子機器冷却システム有权
标题翻译：电子设备冷却系统
公开(公告)号：JP2014220419A
公开(公告)日：2014-11-20
申请号：JP2013099462
申请日：2013-05-09
申请人：富士通株式会社 , Fujitsu Ltd
发明人： UMEMIYA SHIGEYOSHI , ENDO HIROSHI , ARIOKA KOSUKE , OGAWA MASATOSHI , KARASAWA KAZUAKI , TOKUYO SHINO , FUKUDA HIROYUKI , KIKUCHI YOSHIO , KONDO MASAO
IPC分类号： H05K7/20 , H05K7/18
CPC分类号： H05K7/18 , H05K7/20
摘要：【課題】電力の無駄な消費を抑制できる電子機器冷却システムを提供する。【解決手段】電子機器冷却システムは、冷却液を冷却する冷凍機31と、電子機器14と、バッファタンク32と、冷凍機31とバッファタンク32との間に冷却液を循環させる第1のポンプ35と、バッファタンク32と電子機器14との間に冷却液を循環させる第2のポンプ36と、冷凍機31とバッファタンク32との間に流れる冷却液の流量を検出する第1の流量計52と、バッファタンク32と電子機器14との間に流れる冷却液の流量を検出する第2の流量計53と、制御部50とを有する。制御部50は、第1の流量計52及び第2の流量計53の出力に応じて第1のポンプ35の送液量を制御する。【選択図】図2
摘要翻译：要解决的问题：提供能够抑制不必要的电力消耗的电子设备冷却系统。解决方案：电子设备冷却系统包括：冷却冷却剂的冷冻机31; 电子设备14; 缓冲罐32; 使制冷剂31与缓冲罐32之间的冷却剂循环的第一泵35; 使冷却剂在缓冲罐32和电子设备14之间循环的第二泵36; 第一流量计52，其检测在制冷机31和缓冲罐32之间流动的冷却剂的流量; 第二流量计53，其检测在缓冲罐32和电子设备14之间流动的冷却剂的流量; 和控制单元50.控制单元50根据第一流量计52和第二流量计53的输出来控制由第一泵35泵送的冷却剂的体积。

19. 发明专利

JP2014183062A Electronic apparatus cooling system and electronic apparatus cooling method 有权
标题翻译：电子设备冷却系统和电子设备冷却方法
公开(公告)号：JP2014183062A
公开(公告)日：2014-09-29
申请号：JP2013054563
申请日：2013-03-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： FUKUDA HIROYUKI , ENDO HIROSHI , KONDO MASAO , UMEMIYA SHIGEYOSHI , OGAWA MASATOSHI
IPC分类号： H05K7/20 , G06F1/20
摘要： PROBLEM TO BE SOLVED: To provide an electronic apparatus cooling system which efficiently cools an electronic apparatus with small power.SOLUTION: An electronic apparatus cooling system includes: a housing 13; multiple electronic apparatuses 13a stored in the housing 13; first cooling fans 13b respectively provided at the multiple electronic apparatuses 13a; a cooling fan unit 12 which is disposed separated from the housing 13 and is provided with second cooling fans 12a for supplying air to the electronic apparatuses 13a in the housing 13; a temperature sensor 25 which detects a temperature of the air introduced into the electronic apparatuses 13a; and a control part. The control part controls the first cooling fans 13b and the cooling fan unit 12 according to the output of the temperature sensor 25 and the operation state of the electronic apparatuses 13a.
摘要翻译：要解决的问题：提供一种电子设备冷却系统，其有效地冷却具有小功率的电子设备。电子设备冷却系统包括：壳体13; 存储在壳体13中的多个电子设备13a; 分别设置在多个电子设备13a的第一冷却风扇13b; 冷却风扇单元12，其与壳体13分离设置，并且设置有用于向壳体13中的电子设备13a供应空气的第二冷却风扇12a; 检测引入电子设备13a的空气的温度的温度传感器25; 和控制部分。控制部根据温度传感器25的输出和电子设备13a的操作状态来控制第一冷却风扇13b和冷却风扇单元12。

20. 发明专利

JP2014146085A Cooler 有权
标题翻译： COOLER
公开(公告)号：JP2014146085A
公开(公告)日：2014-08-14
申请号：JP2013012799
申请日：2013-01-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： ENDO HIROSHI , OGAWA MASATOSHI , UMEMIYA SHIGEYOSHI , KARASAWA KAZUAKI , KIKUCHI YOSHIO , FUKUDA HIROYUKI , KONDO MASAO
IPC分类号： G06F1/20 , F24F1/00 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide a cooler which sucks and discharges air in consideration of a direction of outside air.SOLUTION: A cooler comprises: an enclosure including first and second wall parts facing each other; an object to be cooled, which is provided in the enclosure; a fan which blows air to the object so as to circulate air in the enclosure; a forward inlet and a backward outlet which are provided on the first wall part on the upstream side of air flowing in a forward direction in the enclosure and on the downstream side of air flowing in a backward direction opposite to the forward direction respectively; a forward outlet and a backward inlet which are provided on the second wall part on the downstream side in the forward direction and on the upstream side in the backward direction respectively; a detection part which detects at least one of difference between pressures inside and outside the enclosure on the first wall part side and difference between pressures inside and outside the enclosure on the second wall part side; and an opening/closing part which, in accordance with the detection result of the detection part, opens the forward inlet and the forward outlet and closes the backward inlet and the backward outlet, or closes the forward inlet and the forward outlet and opens the backward inlet and the backward outlet.
摘要翻译：要解决的问题：提供考虑到外部空气的方向吸入和排出空气的冷却器。解决方案：冷却器包括：包括彼此面对的第一和第二壁部的外壳; 要冷却的物体，其设置在所述外壳中; 将空气吹向物体以使外壳中的空气循环的风扇; 前进入口和后退出口，分别设置在沿着向前方向流动的空气的上游侧的第一壁部分和在与向前方向相反的向后方向上流动的空气的下游侧; 分别设置在前后方向下游侧的第二壁部和后方的上游侧的前方出口和后方入口，检测部件，其检测第一壁部侧的外壳内外的压力差和第二壁部侧的外壳内外的压力的差异中的至少一个; 以及根据检测部的检测结果打开前进口和前出口并关闭后进口和后出口的打开/关闭部，或者关闭前进口和前出口并打开向后入口和后退出口。

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