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1. 发明专利

JP2009129476A Magnetic recording medium and magnetic disk drive with the same 审中-公开
标题翻译：磁记录介质和磁盘驱动器
公开(公告)号：JP2009129476A
公开(公告)日：2009-06-11
申请号：JP2007300765
申请日：2007-11-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KURIHARA KAZUAKI , SATO KEISUKE , SUGIMOTO TOSHIO
IPC分类号： G11B5/738 , G11B5/65 , G11B5/82
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording medium using a material more inexpensive than Ru and having magnetic characteristics equal to or more than that using Ru, and to provide a magnetic disk drive with the same.
SOLUTION: In the magnetic recording medium having a backing layer 2, an underlayer 3, a magnetic recording layer 4 having a granular structure and a protective layer 5 which are formed in this order on a substrate 1, crystal bodies 31a, 32a and 33a which are satisfactory in lattice matching with magnetic grains 41 of the magnetic recording layer 4 are formed in the underlayer 3 and oxide layers are interposed therebetween to form the underlayer 3 in a granular structure. Thereby, the magnetic recording layer 4 can be film-deposited in a stress free state and the magnetic recording medium 10 having high magnetic characteristics can be manufactured even by using a material other than Ru for the underlayer 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用比Ru更廉价且具有等于或大于使用Ru的磁特性的材料的磁记录介质，并提供具有与Ru相同的磁性能的磁记录介质。解决方案：在具有背衬层2，底层3，具有颗粒结构的磁记录层4和在衬底1上依次形成的保护层5的磁记录介质中，晶体31a，32a 并且在底层3中形成与磁记录层4的磁性粒子41的格子匹配令人满意的33a和33a，并且将氧化物层插入其间以形成粒状结构中的底层3。因此，磁记录层4可以以无应力状态被膜沉积，并且即使通过使用除了底层3之外的Ru的材料，也可以制造具有高磁特性的磁记录介质10.权利要求：（C ）2009，JPO＆INPIT

2. 发明专利

JP2007266538A Semiconductor storage device and method of manufacturing same, and data write method and data read method for same 有权
标题翻译：半导体存储装置及其制造方法以及数据写入方法和数据读取方法
公开(公告)号：JP2007266538A
公开(公告)日：2007-10-11
申请号：JP2006092999
申请日：2006-03-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/10 , H01L27/105 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide an excellently high-speed semiconductor storage device having superior storage memory holding characteristics, and to provide a method of manufacturing the same, as well as a method of writing data to the same, and a method of reading data from the same.
SOLUTION: The semiconductor storage device 1 comprises: a lower electrode 55 formed on a semiconductor substrate 22; an electromagnetic effect layer 53 that is formed on the lower electrode 55 and shows an electromagnetic effect; an upper electrode 51 formed on the electromagnetic effect layer 53; and a magnetic storage layer 57, where voltage is applied between the upper and lower electrodes 51, 55 and the direction of residual magnetization is decided, based on the magnetization direction of the electromagnetic effect layer 53 aligned in a specified direction.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供具有优异的存储存储器保持特性的卓越的高速半导体存储装置，并提供其制造方法，以及向其写入数据的方法，以及方法从相同的数据读取。解决方案：半导体存储装置1包括：形成在半导体衬底22上的下电极55; 电磁效应层53形成在下电极55上并显示电磁效应; 形成在电磁效应层53上的上电极51; 以及基于沿指定方向排列的电磁效应层53的磁化方向，决定在上下电极51,55之间施加电压和剩余磁化方向的磁存储层57。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007266407A Non-volatile memory and method of manufacturing same 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：JP2007266407A
公开(公告)日：2007-10-11
申请号：JP2006090972
申请日：2006-03-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory that suppresses the leakage current of a ferroelectric substance and can be used stably, and to provide a method of manufacturing the non-volatile memory. SOLUTION: The memory cell of the non-volatile memory 1 comprises: a cell selection transistor 5, and a ferroelectric capacitor 2 connected to the cell selection transistor 5 electrically. The ferroelectric capacitor 2 comprises: a lower electrode 15; a ferroelectric film 17 that is formed on the lower electrode 15, and contains a magnetic element; and an upper electrode 19 formed on the ferroelectric film 17. The non-volatile memory 1 is formed by applying a magnetic field of 10 kOe in a direction vertical to the surface of the ferroelectric film 17 and heating to 400°C. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供抑制铁电体物质的漏电流的非易失性存储器，能够稳定地使用，并提供制造非易失性存储器的方法。解决方案：非易失性存储器1的存储单元包括：电池选择晶体管5和与电池选择晶体管5电连接的铁电电容器2。铁电电容器2包括：下电极15; 形成在下电极15上并含有磁性元件的铁电体膜17; 以及形成在强电介质膜17上的上电极19.非易失性存储器1通过在垂直于铁电体膜17的表面的方向上施加10kOe的磁场并加热至400℃而形成。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2009231345A Ferroelectric material, ferroelectric capacitor, and semiconductor memory 审中-公开
标题翻译：微电子材料，电磁电容器和半导体存储器
公开(公告)号：JP2009231345A
公开(公告)日：2009-10-08
申请号：JP2008071631
申请日：2008-03-19
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KURIHARA KAZUAKI , MARUYAMA KENJI
IPC分类号： H01L21/8246 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric material including a bismuth element allowing a small amount of leak current and a large amount of self-polarization, a ferroelectric capacitor utilizing the ferroelectric material, and a highly integrated semiconductor memory utilizing the ferroelectric capacitor.
SOLUTION: The ferroelectric capacitor includes a first electrode 10, a ferroelectric material film 12 formed on the first electrode 10 and includes a mixed crystal of a first ferroelectric material formed of the Perovskite oxide including the bismuth element and a second ferroelectric material formed of the Perovskite oxide showing anti-ferroelectric property, and a second electrode 14 formed on the ferroelectric material film 12.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种包含允许少量漏电流和大量自极化的铋元素的铁电材料，利用铁电材料的铁电电容器和利用铁电体的高度集成的半导体存储器电容器。
解决方案：铁电电容器包括第一电极10，形成在第一电极10上的铁电材料膜12，并且包括由包含铋元素的钙钛矿氧化物形成的第一铁电材料和形成的第二铁电材料的混合晶体的显示出抗铁电性能的钙钛矿氧化物，以及形成在铁电材料膜12上的第二电极14.版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008172305A Superconductive filter device and adjusting method thereof 有权
标题翻译：超导滤波器及其调节方法
公开(公告)号：JP2008172305A
公开(公告)日：2008-07-24
申请号：JP2007001020
申请日：2007-01-09
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： H01P1/203
CPC分类号： H01P1/20363
摘要： PROBLEM TO BE SOLVED: To provide a superconductive filter device capable of finely adjusting a resonance frequency and a bandwidth by a simple constitution.
SOLUTION: The superconductive filter device (10) includes a dielectric base substrate (1), a resonator pattern (2) formed of a superconductive material on the dielectric base substrate, an anisotropic dielectric or a magnetic body (3) disposed above the resonator pattern, and an angle adjusting mechanism (15) varying the horizontal angle of the anisotropic dielectric or the magnetic body to an input signal. The dielectric constant or magnetic permeability is varied by varying the angle of the dielectric or the magnetic body to the input signal, and consequently the resonance frequency and the bandwidth of the superconductive filter device are finely adjusted.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过简单的结构微调谐谐振频率和带宽的超导滤波器装置。超导滤波器装置（10）包括电介质基底（1），在电介质基底衬底上由超导材料形成的谐振器图案（2），设置在电介质基底上的各向异性电介质或磁体（3）谐振器图案和将各向异性介电体或磁体的水平角度改变为输入信号的角度调节机构（15）。通过改变电介质或磁体与输入信号的角度来改变介电常数或磁导率，从而精细地调节超导滤波器件的谐振频率和带宽。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007163691A Optical element and optical loss measuring device 审中-公开
标题翻译：光学元件和光学损失测量装置
公开(公告)号：JP2007163691A
公开(公告)日：2007-06-28
申请号：JP2005358049
申请日：2005-12-12
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO
IPC分类号： G02F1/295 , G01M11/00 , G02B6/12
CPC分类号： G02B6/122 , G02B6/131 , G02B6/34 , G02F1/295
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable optical element, wherein distance between lower and upper electrodes is reduced as much as possible, voltage applied to a core layer is efficiently and satisfactorily secured to reduce voltage consumption, and optical loss of an optical waveguide is reduced. SOLUTION: An optical deflection element is provided with a substrate 1 and the optical waveguide 2 formed on the substrate 1 and comprising an electrooptical material. The optical waveguide 2 is so constituted that the core layer 4 having an optical path formed therein is interposed between lower and upper clad layers 3 and 5. The lower and upper clad layers 3 and 5 are formed by using a conductive oxide as a material and serve as the lower and the upper electrodes for applying voltage to the core layer 4. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供尽可能降低下电极和上电极之间的距离的高度可靠的光学元件，有效且令人满意地确保施加到芯层的电压以降低电压消耗，并且光损失光波导减少。解决方案：光学偏转元件设置有基板1和形成在基板1上并包括电光材料的光波导2。光波导2的结构使得其中形成有光路的芯层4介于下包层3和上覆层3之间。下包层3和上覆层3是通过使用导电氧化物作为材料形成的，用作向芯层4施加电压的下电极和上电极。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006154145A Optical element and optical switch 审中-公开
标题翻译：光学元件和光开关
公开(公告)号：JP2006154145A
公开(公告)日：2006-06-15
申请号：JP2004343162
申请日：2004-11-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO , ISHII MASATOSHI
IPC分类号： G02F1/313
CPC分类号： G02F1/313 , G02F2203/06
摘要： PROBLEM TO BE SOLVED: To provide an optical element which easily and surely realizes high speed driving based on an electro-optic effect without producing deterioration in characteristics such as an optical loss with an extremely simple construction, and which can be further miniaturized, and an optical switch. SOLUTION: A core layer 12 of an optical waveguide 3 is composed of an electro-optic material exhibiting a rhombohedral structure, and the electro-optic material is grown and formed as a film grown and formed on a substrate whose crystal orientation of the principal surface is (100). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种光学元件，其容易且可靠地实现基于电光效果的高速驱动，而不会以非常简单的结构产生诸如光损耗的特性的劣化，并且可以进一步小型化，以及光开关。解决方案：光波导3的芯层12由表现出菱面体结构的电光材料构成，电光材料生长并形成为在其晶体取向为主面为（100）。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2010021639A Filter 有权
标题翻译：过滤
公开(公告)号：JP2010021639A
公开(公告)日：2010-01-28
申请号：JP2008178100
申请日：2008-07-08
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , NAKANISHI TERU , AKASEGAWA AKIHIKO , YAMANAKA KAZUNORI , KURIHARA KAZUAKI
IPC分类号： H01P1/203 , H01P1/208
CPC分类号： H01B12/02 , H01P1/203 , H01P1/20381
摘要： PROBLEM TO BE SOLVED: To strongly couple a filter with input/output lines, in a superconducting filter having a disk-shaped electrode.
SOLUTION: The filter includes a dielectric substrate; an electrode layer 22 continuously formed covering the first side of the dielectric substrate; a disk-shaped electrode pattern provided on the second side of the dielectric substrate so as to hold the dielectric substrate together with the electrode layer; a ground slot 22B having an opening that is formed in a circular area holding the dielectric substrate together with the disk-shaped electrode pattern in the electrode layer 22 asymmetrically with respect to the center of the circular area and exposes the dielectric substrate; an input side cutout portion formed to reach the circular area in the electrode layer 22 and extended in a first direction; an output side cutout portion extended in a second direction orthogonal to the first direction; an input side conductive pattern formed in the input side cutout portion; and an output side conductive pattern formed in the output side cutout portion.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在具有盘形电极的超导滤波器中，将滤波器与输入/输出线强耦合。滤波器包括电介质基片; 连续形成的覆盖电介质基板的第一面的电极层22; 设置在所述电介质基板的第二侧上的盘状电极图案，以将所述电介质基板与所述电极层一起保持; 接地槽22B，其开口形成在与电极层22中的盘状电极图案相对于圆形区域的中心不对称地保持电介质基板的圆形区域中，并露出电介质基板; 输入侧切口部，其形成为到达电极层22的圆形区域并沿第一方向延伸; 输出侧切口部分，沿与第一方向正交的第二方向延伸; 形成在所述输入侧切口部中的输入侧导电图案; 以及形成在输出侧切口部中的输出侧导电图案。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009225038A Tunable filter device and tuning method 有权
标题翻译： TUNABLE滤波器和调谐方法
公开(公告)号：JP2009225038A
公开(公告)日：2009-10-01
申请号：JP2008066514
申请日：2008-03-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKANISHI TERU , AKASEGAWA AKIHIKO , YAMANAKA KAZUNORI , KURIHARA KAZUAKI , SATO KEISUKE
IPC分类号： H01P1/203 , H01P1/208
摘要： PROBLEM TO BE SOLVED: To provide a tunable filter device for adjusting characteristics with a simple method and configuration, while measuring the characteristics of a superconducting filter device.
SOLUTION: The tunable filter device includes: a superconducting disk pattern (12) formed on a dielectric substrate (11); a dual mode generation member (15) arranged near the superconducting disk pattern on the circumference of the superconducting disk pattern; and rotation means (17, 19) for moving the dual mode generation member along the circumference of the superconducting disk pattern.
COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2006194993A Optical element and optical switch 有权
标题翻译：光学元件和光开关
公开(公告)号：JP2006194993A
公开(公告)日：2006-07-27
申请号：JP2005004252
申请日：2005-01-11
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATO KEISUKE , KONDO MASAO , ISHII MASATOSHI
IPC分类号： G02F1/313 , G02B6/12 , G02F1/035
CPC分类号： G02F1/035 , G02F1/19 , G02F1/313 , G02F2201/16
摘要： PROBLEM TO BE SOLVED: To realize an optical element which is adaptable to additional downsizing of a device by controlling a refractive index of an electro-optic effect film easily and accurately. SOLUTION: By utilizing the fact that, in a core layer 12 of an optical waveguide 4, the refractive index digitally varies to a large extent around a prescribed voltage corresponding to a phase transition point of an antiferroelectric substance as a boundary, and shows a nearly constant value in the vicinity of the prescribed voltage, a voltage controlling means 6 controls the refractive index of light in the optical waveguide 4 with two values of first and second voltages in the vicinity of the prescribed voltage. COPYRIGHT: (C)2006,JPO&NCIPI

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