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11. 发明专利

JP2008010509A Magnetoresistance effect element and magnetic disk device 审中-公开
标题翻译：磁阻效应元件和磁盘设备
公开(公告)号：JP2008010509A
公开(公告)日：2008-01-17
申请号：JP2006177100
申请日：2006-06-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , TSUKADA MINEHARU
IPC分类号： H01L43/08 , G11B5/39 , H01L43/10 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B2005/3996 , Y10T29/49043
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can improve the stability of output, as well as a magnetic disk device using the same. SOLUTION: An orientation control film 3 is formed on an alumina film 2 by a sputtering method. A Ti film, a Ta film, a Ru film, or a MgO film or the like is formed as the orientation control film 3. A lower shield layer 4 is formed on the orientation control film 3. In this case, crystal grains forming the lower shield layer 4 become prismatic. When the Ti film, the Ta film or the Ru film is formed as the orientation control film 3, the surface of the lower shield layer 4 becomes a (111) plane; and when the MgO film is formed as the orientation control film 3, it becomes a (100) plane. A GMR film 5 is formed on the lower shield layer 4. When forming the GMR film 5, an anti-ferromagnetic film is epitaxially grown on the lower shield layer 4 first. At this time, the anti-ferromagnetic film is reflected by the crystal structure of the lower shield film 4, its surface also becomes a (111) plane or a (100) plane. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以提高输出稳定性的磁阻效应元件以及使用该磁阻效应元件的磁盘装置。解决方案：通过溅射法在氧化铝膜2上形成取向控制膜3。形成Ti膜，Ta膜，Ru膜或MgO膜等作为取向控制膜3.在取向控制膜3上形成下屏蔽层4.在这种情况下，形成下屏蔽层4变成棱柱形。当形成Ti膜，Ta膜或Ru膜作为取向控制膜3时，下屏蔽层4的表面成为（111）面; 并且当形成作为取向控制膜3的MgO膜时，成为（100）面。在下屏蔽层4上形成有GMR膜5.当形成GMR膜5时，首先在下屏蔽层4上外延生长反铁磁性膜。此时，反铁磁膜被下屏蔽膜4的晶体结构反射，其表面也成为（111）面或（100）面。版权所有（C）2008，JPO＆INPIT

12. 发明专利

JP2014146658A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014146658A
公开(公告)日：2014-08-14
申请号：JP2013013433
申请日：2013-01-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SHIMIZU KOZO , SAKUYAMA SEIKI , MIYAJIMA TOYOO
IPC分类号： H01L21/60 , H01L21/3205 , H01L21/768 , H01L23/522
CPC分类号： H01L24/13 , B23K35/004 , B23K35/007 , B23K35/0244 , B23K35/24 , B23K35/262 , B23K35/264 , B23K2201/40 , H01L21/76843 , H01L23/49811 , H01L23/49866 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/81 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05582 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13111 , H01L2224/13113 , H01L2224/16225 , H01L2224/16227 , H01L2224/16501 , H01L2224/73204 , H01L2224/81075 , H01L2224/81211 , H01L2224/81815 , H01L2924/0103 , H01L2924/01322 , H01L2924/014 , H01L2924/15311 , H05K3/244 , H05K3/3436 , H05K3/3463 , H05K3/3494 , H05K2201/10734 , H01L2924/00014 , H01L2924/01083 , H01L2924/0105 , H01L2924/01015 , H01L2924/01047 , H01L2924/01051 , H01L2924/01027 , H01L2924/01028 , H01L2924/01024 , H01L2924/01032 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To increase a bond strength between a connection terminal and an electrode in a semiconductor device and a manufacturing method of the same.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming barrier metal films 23, 27 on at least one surfaces of a first electrode 22 of a wiring board 21 and a second electrode 26 of a semiconductor element 25; a process of arranging, between the first electrode 22 and the second electrode 26, a connection terminal 24 made from a solder containing tin, bismuth, and zinc; and a process of bonding the connection terminal 24 to each of the first barrier metal film 23 and the second barrier metal film 27 by heating the connection terminal 24 and maintaining a temperature of the connection terminal 24 at a constant temperature Tequal to or higher than a melting point Tof the solder for a predetermined amount of time.
摘要翻译：要解决的问题：为了增加半导体器件中的连接端子和电极之间的结合强度及其制造方法。一种半导体器件制造方法，包括：形成阻挡金属膜23,27的工艺布线板21的第一电极22和半导体元件25的第二电极26的至少一个表面; 在第一电极22和第二电极26之间布置由含锡，铋和锌的焊料制成的连接端子24的工序; 以及通过加热连接端子24并将连接端子24的温度保持在恒定温度Tequal以上的方式将连接端子24接合到第一阻挡金属膜23和第二阻挡金属膜27中的每一个的处理熔点Tof焊料预定量的时间。

13. 发明专利

JP2014090033A Compound semiconductor device and manufacturing method of the same 审中-公开
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2014090033A
公开(公告)日：2014-05-15
申请号：JP2012238334
申请日：2012-10-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , ISHIGURO TETSURO , YAMADA ATSUSHI , IMANISHI KENJI
IPC分类号： H01L27/098 , H01L21/337 , H01L29/808 , H02M3/28 , H02M7/12
CPC分类号： Y02B70/1483
摘要： PROBLEM TO BE SOLVED: To achieve a highly reliable compound semiconductor device which achieves successful normally-off without causing problems such as increase in electrical resistance and an unstable operation, which are caused by dry etching of a p-type semiconductor layer though the p-type semiconductor layer is used for controlling 2DEG.SOLUTION: An AlGaN/GaN HEMT comprises: a compound semiconductor lamination structure 2; a gate electrode 7 formed above the compound semiconductor lamination structure 2; and a p-type semiconductor layer 3a locally formed between the compound semiconductor lamination structure 2 and the gate electrode 7. The compound semiconductor lamination structure 2 has flatness to an atomic step level on a surface in an unformed surface where the p-type semiconductor layer 3a is not formed.
摘要翻译：要解决的问题：为了实现一种高可靠性的化合物半导体器件，其通过p型半导体层的干法蚀刻引起的常规关闭，而不会引起诸如电阻增加和不稳定操作的问题，类型半导体层用于控制2DEG。解决方案：AlGaN / GaN HEMT包括：化合物半导体层叠结构2; 形成在化合物半导体层叠结构体2上方的栅电极7; 以及局部地形成在化合物半导体层叠结构体2和栅电极7之间的p型半导体层3a。化合物半导体层叠结构体2在未形成表面的表面上具有与原子台阶水平的平坦度，其中p型半导体层 3a不形成。

14. 发明专利

JP2014072397A Compound semiconductor device and method of manufacturing the same 审中-公开
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2014072397A
公开(公告)日：2014-04-21
申请号：JP2012217756
申请日：2012-09-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IMANISHI KENJI , YAMADA ATSUSHI , ISHIGURO TETSURO , MIYAJIMA TOYOO
IPC分类号： H01L29/812 , H01L21/336 , H01L21/338 , H01L29/778 , H01L29/78 , H02M3/28
CPC分类号： H01L29/778 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/2003 , H01L29/207 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To achieve a highly reliable compound semiconductor device that reduces resistance, improves device performance by stabilizing operation, and achieves reliable normally-off.SOLUTION: An AlGaN/GaN HEMT includes an electron transit layer 3, an electron supply layer 5 formed above the electron transit layer 3, and a gate electrode 9 formed above the electron supply layer 5. A p-type semiconductor region 10a is formed only at a portion included in a region of the electron transit layer 3 under the gate electrode 9.
摘要翻译：要解决的问题：为了实现降低电阻的高可靠性化合物半导体器件，通过稳定操作提高器件性能，并实现可靠的常关。解决方案：AlGaN / GaN HEMT包括电子传输层3，电子供给层5 形成在电子转移层3上方的栅极电极9和形成在电子供给层5上方的栅电极9.仅在栅电极9的电子输送层3的区域内形成p型半导体区域10a。

15. 发明专利

JP2013074069A Semiconductor device and manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：JP2013074069A
公开(公告)日：2013-04-22
申请号：JP2011211561
申请日：2011-09-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KANEMURA MASAHITO , MIYAJIMA TOYOO , TAGI TOSHIHIRO
IPC分类号： H01L21/338 , H01L21/28 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H01L29/42364 , H01L21/28264 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H03F1/3247
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a gate leakage current and performing a normally-off operation.SOLUTION: A semiconductor device comprises: a first semiconductor layer 12 formed on a substrate 11; a second semiconductor layer 13 formed on the first semiconductor layer 11; a lower insulating layer 31 formed on the second semiconductor layer 13; an oxide film 33 formed on the lower insulating film 31 and formed of an oxide having p-type conductivity; an upper insulating film 34 formed on the oxide film 33; and a gate electrode 41 formed on the upper insulating film 34. A recess is formed on a surface of the lower insulating film 31 immediately below the gate electrode 41.
摘要翻译：要解决的问题：提供能够减小栅极漏电流并执行常关操作的半导体器件。解决方案：半导体器件包括：形成在衬底11上的第一半导体层12; 形成在第一半导体层11上的第二半导体层13; 形成在第二半导体层13上的下绝缘层31; 形成在下绝缘膜31上并由具有p型导电性的氧化物形成的氧化物膜33; 形成在氧化膜33上的上绝缘膜34; 以及形成在上绝缘膜34上的栅电极41.在栅电极41正下方的下绝缘膜31的表面上形成凹部。（C）2013，JPO＆INPIT

16. 发明专利

JP2012119582A Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2012119582A
公开(公告)日：2012-06-21
申请号：JP2010269673
申请日：2010-12-02
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , YOSHIKAWA SHUNEI , IMANISHI KENJI , TAGI TOSHIHIRO , KANEMURA MASAHITO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812 , H02M3/155
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of preventing occurrence of gate leakage current, reduction in withstand voltage, and occurrence of current collapse, and to provide a method of manufacturing the same.SOLUTION: A cap layer 21 includes: an n-GaN layer 6; an i-AlN layer 8 formed above the n-GaN layer 6; and an n-GaN layer 10 formed above the i-AlN layer 8. The cap layer 21 further includes at least an AlGaN containing layer 7 that is formed between the n-GaN layer 6 and the i-AlN layer 8 and in which the Al composition increases as approaching the i-AlN layer 8 or an AlGaN containing layer 9 that is formed between the i-AlN layer 8 and the n-GaN layer 10 and in which the Al composition increases as approaching the i-AlN layer 8.
摘要翻译：要解决的问题：提供一种能够防止栅极泄漏电流的发生，耐压降低和电流崩溃的发生的化合物半导体器件，并提供其制造方法。解决方案：盖层21包括：n-GaN层6; 形成在n-GaN层6上方的i-AlN层8; 以及形成在i-AlN层8上方的n-GaN层10.覆盖层21还包括形成在n-GaN层6和i-AlN层8之间的至少AlGaN含有层7，其中 Al组分随着接近i-AlN层8或形成在i-AlN层8和n-GaN层10之间的AlGaN含有层9而增加，并且其中Al组分随着接近i-AlN层8而增加。版权所有（C）2012，JPO＆INPIT

17. 发明专利

JP2010086882A Electron beam device and its adjustment method 审中-公开
标题翻译：电子束装置及其调整方法
公开(公告)号：JP2010086882A
公开(公告)日：2010-04-15
申请号：JP2008256808
申请日：2008-10-01
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , HONDA KOICHIRO
IPC分类号： H01J37/295
摘要： PROBLEM TO BE SOLVED: To automatically form an interference pattern of an electron beam having an optimal clear condition without depending on a human operation, and to perform a phase measurement at a stable condition by an electron beam holography method.
SOLUTION: A control section 25 changes an astigmatism correction current value applied to an astigmatism correction lens 13, contrast is calculated from the interference pattern of the electron beam at an electron beam hologram image obtained by an image acquisition section 25, an interrelationship between the astigmatism correction current value and the contrast of the interference patterns is calculated, and the astigmatism correction current value is determined so as to maximize the contrast.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在不依赖于人体操作的情况下自动形成具有最佳清除条件的电子束的干涉图案，并且通过电子束全息术在稳定状态下进行相位测量。解决方案：控制部分25改变应用于像散校正透镜13的像散校正电流值，根据由图像获取部分25获得的电子束全息图图像处的电子束的干涉图案计算对比度，相互关系计算像散校正电流值和干涉图案的对比度之间的像差，并且确定像散校正电流值以使对比度最大化。版权所有（C）2010，JPO＆INPIT

18. 发明专利

JP2009152120A Electron beam tomography method, and electron beam tomography device 有权
标题翻译：电子束测量方法和电子束成像装置
公开(公告)号：JP2009152120A
公开(公告)日：2009-07-09
申请号：JP2007330320
申请日：2007-12-21
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , ITO RYOJI
IPC分类号： H01J37/26 , H01J37/22 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an electron beam tomography method capable of obtaining a three-dimensionally reconstituted image of high precision by improving precision of information related to a projection direction of a sample, and to provide an electron beam tomography apparatus. SOLUTION: A transmission electron image is obtained by radiating the electron beam to an evaluation site of the sample having the evaluation site where the structure is to be evaluated, and a single crystal site integrally joined with the evaluation site, and the electron beam diffraction image is obtained by radiating the electron beam to the single crystal site without changing a radiation angle of the electron beam. The operation is carried out by a plurality of angles, a series of transmission electron images and the electron beam diffraction images are obtained, and based on the electron beam diffraction image, the projection direction for each of the series of the transmission electron images is decided. Based on the projection direction obtained by the method, positioning of the series of the transmission electron is carried out, and reconstituting calculation of a three-dimensional structure of the evaluation site is carried out. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题：提供能够通过提高与样品的投影方向相关的信息的精度来获得高精度的三维重构图像的电子束断层摄影方法，并提供电子束断层摄影装置。解决方案：通过将电子束照射到具有评价结构的评价部位的样品的评价部位和与评价部位一体接合的单晶部位而获得透射电子图像，通过在不改变电子束的辐射角的情况下将电子束照射到单晶位置来获得光束衍射图像。通过多个角度进行操作，获得一系列透射电子图像和电子束衍射图像，并且基于电子束衍射图像，确定一系列透射电子图像的投影方向。基于通过该方法获得的投影方向，进行一系列透射电子的定位，并且重新计算评价部位的三维结构。版权所有（C）2009，JPO＆INPIT

19. 发明专利

JP2009052944A Element evaluation method and apparatus 有权
标题翻译：元素评估方法和设备
公开(公告)号：JP2009052944A
公开(公告)日：2009-03-12
申请号：JP2007218142
申请日：2007-08-24
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , ODAKA YASUTOSHI
IPC分类号： G01N23/04 , G01B15/02
CPC分类号： G01B15/025
摘要： PROBLEM TO BE SOLVED: To provide an element evaluation method, constituted so as to evaluate the element shape of the lead element of a magnetic head, which enables the evaluation of lead width, core width and element height by the same evaluation sample, and an element evaluation apparatus.
SOLUTION: An electron beam enters a first region where a first part comprising a first material overlies a second part comprising a second material to measure the intensity of the first electron beam showing the contrast depending on the atomic masses of the constituent elements of the first and second materials while an electron beam enters a second region comprising the first material to measure the intensity of the second electron beam showing the contrast depending on the atomic mass of the constituent element of the first material and an electron beam enters a third region comprising the second material to measure the intensity of the third electron beam showing the contrast depending on the atomic mass of the constituent element of the second material. The relationship between the intensity of the first electron beam and the thickness of the first part is calculated from the relationship between the intensity of the second electron beam and the thickness of an evaluated sample and the relationship between the intensity of the third electron beam and the thickness of the evaluated sample to calculate the thickness of the first part of the first region.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种元件评估方法，其构成为评估磁头的引线元件的元件形状，其能够通过相同的评估样本来评估引线宽度，芯宽度和元件高度，以及元件评价装置。解决方案：电子束进入第一区域，其中包含第一材料的第一部分覆盖包括第二材料的第二部分，以测量显示对比度的第一电子束的强度，这取决于组成元素的原子质量第一和第二材料，而电子束进入包含第一材料的第二区域，以测量根据第一材料的构成元素的原子质量显示对比度的第二电子束的强度，并且电子束进入第三区域包括第二材料，以测量根据第二材料的构成元素的原子质量显示对比度的第三电子束的强度。第一电子束的强度与第一部分的厚度之间的关系由第二电子束的强度与评价样品的厚度之间的关系以及第三电子束的强度与第评估样品的厚度，以计算第一区域的第一部分的厚度。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2003248910A MEASURING METHOD OF MAGNETIC LEAKAGE FIELD AND EVALUATION METHOD OF ELEMENT 审中-公开
公开(公告)号：JP2003248910A
公开(公告)日：2003-09-05
申请号：JP2002047541
申请日：2002-02-25
申请人： FUJITSU LTD
发明人： HONDA KOICHIRO , MIYAJIMA TOYOO
IPC分类号： G01R33/10 , G11B5/455
摘要： PROBLEM TO BE SOLVED: To provide a method for visualizing distribution of a magnetic field without a random phase using electron holography, which relates to a measuring method of a magnetic leakage field and an evaluation method of an element. SOLUTION: An electron beam is injected into a magnetic field that is leaked outside from a specimen comprising a magnetic material, and a phase distribution of the electron beam passing through a space with the leaked magnetic field is detected using the electron holography in a condition where a phase shift of the electron beam formed in the space without the leaked magnetic field is minimum, thereby obtaining distribution of the magnetic field leaked from the specimen. COPYRIGHT: (C)2003,JPO

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