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11. 发明专利

JP2011009601A Substrate drying method, and substrate drying apparatus 审中-公开
标题翻译：基板干燥方法和基板干燥装置
公开(公告)号：JP2011009601A
公开(公告)日：2011-01-13
申请号：JP2009153291
申请日：2009-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KODERA AKIRA , TAIMA YASUSHI , O CHIKAAKI , YAMAUCHI KAZUO , SUZUKI TSUKURU , HIYAMA HIROKUNI , SAITO TAKAYUKI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To achieve drying using HFE (hydrofluoroether) as a solvent for drying adaptively to spin drying which is widely employed for existent CMP apparatuses etc.SOLUTION: In a substrate drying method of drying a surface of a substrate W on which liquid sticks, the liquid on the surface of the substrate W is removed by blowing to the surface of the substrate W mixed vapor 22 of hydrofluoroether and water-soluble alcohol which is warmed at 120 to 160°C and pressurized to 0.5 to 1.0 MPa while the substrate W is rotated.
摘要翻译：要解决的问题：使用HFE（氢氟醚）作为自适应干燥的溶剂进行干燥，适用于现有CMP设备等广泛使用的旋转干燥。溶解性：在将基材W的表面干燥的基材干燥方法中，将基板W的表面上的液体吹入基板W的表面，并将其加热到120〜160℃并加压至0.5〜1.0MPa的氢氟醚和水溶性醇的混合蒸气22，同时衬底W旋转。

12. 发明专利

JP2006261066A Doping device and doping method 审中-公开
标题翻译：打印设备和打印方法
公开(公告)号：JP2006261066A
公开(公告)日：2006-09-28
申请号：JP2005080436
申请日：2005-03-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YAMAUCHI KAZUO
IPC分类号： H01J37/317 , G21K5/02 , H01L21/265 , H05H1/46 , H05H3/02
摘要： PROBLEM TO BE SOLVED: To provide a doping device wherein impurities can be introduced so that a sample can electrically keep neutrality by irradiating a neutral particle beam having low energy to the surface of the sample. SOLUTION: This doping device 10 dopes the impurities by irradiating the neutral particles to the sample 18. The doping device 10 is equipped with a holding stand 44 to hold the sample 18, a plasma chamber 14 to generate charged particles as plasma, an electrode 32 to accelerate the charged particles toward the sample, and a neutralizing chamber 16 to generate the neutral particles by neutralizing the charged particles which have been accelerated. In addition, this doping device 10 is equipped with deflection electrodes 60 provided between the neutralizing chamber 16 and the sample 18 to remove the charged particles 54 which have not been neutralized in the neutralizing chamber 16, and measuring means 64, 66, 68 and 70 each measuring the amount of dope irradiated to the sample 18 by measuring the charged particles 54 which have been removed from the deflection electrodes 60. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种掺杂装置，其中可以引入杂质，使得样品可以通过向样品的表面照射具有低能量的中性粒子束来电保持中性。解决方案：该掺杂装置10通过将中性粒子照射到样品18来掺杂杂质。掺杂装置10配备有保持架44以保持样品18，等离子体室14以产生作为等离子体的带电粒子，用于将带电粒子加速到样品的电极32和中和室16，通过中和被加速的带电粒子来产生中性粒子。此外，该掺杂装置10配备有设置在中和室16和样品18之间的偏转电极60，以去除在中和室16中未被中和的带电粒子54，以及测量装置64,66,68和70 每个都通过测量已经从偏转电极60去除的带电粒子54来测量照射到样品18上的掺杂物的量。（C）2006，JPO＆NCIPI

13. 发明专利

JP2004281232A Beam source and beam treatment device 审中-公开
公开(公告)号：JP2004281232A
公开(公告)日：2004-10-07
申请号：JP2003071073
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： ICHIKI KATSUNORI , SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： B01J3/00 , B01J19/12 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/3065 , H01S3/00 , H05H1/46
CPC分类号： H05H1/46 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of uniformly irradiating various beams like positive ion, negative ion, neutral particles or the like on a treated object in a large ion current density and in a large diameter, and realizing a large caliber and longer life of a grid electrode. SOLUTION: Provided with a means for leading in gas, a positive and negative ion plasma generating means generating a state in which the positive ion and the negative ion are mixed through plasmolyzation of gas, a positive and negative ion generating chamber generating positive and negative ion, and a plurality of grid electrodes equipped with a plurality of beam-drawing-out holes, the device draws out ion or beams neutralized from the ion through the beam-drawing-out holes fitted to the grid electrodes by accelerating the positive ion or the negative ion through impression of voltage between the plurality of electrodes. COPYRIGHT: (C)2005,JPO&NCIPI

14. 发明专利

JP2004281231A Beam source and beam treatment device 有权
公开(公告)号：JP2004281231A
公开(公告)日：2004-10-07
申请号：JP2003071072
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： FUKUDA AKIRA , SHIBATA AKIO , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J19/08 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of uniformly irradiating various beams like positive ion, negative ion, neutral particles or the like in a large diameter on a treated object and realizing charge-free and damage-free properties. SOLUTION: The device, provided with an antenna 2 generating plasma inside a plasma generating chamber, a first electrode 1 arranged inside the plasma generating chamber 4, and a potential difference generating means generating potential difference between the first electrode 1 and the antenna 2, draws out particle beams through the first electrode 1 from the plasma generated between the antenna 2 and the first electrode 1. COPYRIGHT: (C)2005,JPO&NCIPI

15. 发明专利

JP2000236857A INACTIVATION OF PATHOGENIC CYST-FORMING MICROORGANISM IN LIQUID 失效
公开(公告)号：JP2000236857A
公开(公告)日：2000-09-05
申请号：JP4335499
申请日：1999-02-22
申请人： EBARA CORP
发明人： KUNITOMO SHINTA , YAMAUCHI KAZUO , IGARASHI CHIAKI , SASAKI KENICHI , KUROKAWA KENICHI , IZEKI MOTOHIRO , KIMATA ISAO
IPC分类号： A23L3/015 , A61L2/02
摘要： PROBLEM TO BE SOLVED: To simply inactivate pathogenic cyst forming microorganisms in a liquid to obtain drinking water having excellent safety without adopting a heating method or without using a chemical agent by pressurizing the liquid containing the pathogenic cyst-forming microorganisms. SOLUTION: This method for inactivating pathogenic cyst-forming microorganisms in a liquid comprises pressurizing the liquid, such as water, containing pathogenic cyst-forming microorganisms such as Cryptosporidium at a pressure of >=1,500 kgf/cm2 for a pressurization time of >=5 min or at a pressure of >=2,000 kgf/cm2 for a pressurization time of >=2 min. The method for inactivating pathogenic cyst-forming microorganisms in a liquid preferably comprises storing the liquid containing the pathogenic cyst-forming microorganisms in a high pressure tank 4, pressurizing the liquid, and then releasing the high pressure liquid from a nozzle tip disposed at the top of the outflow pipe of the high pressure tank 4 into an ordinary pressure atmosphere, thus rapidly reducing the pressure to inactivate the pathogenic cyst-forming microorganisms in the liquid.

16. 发明专利

JPH1153733A PRODUCTION OF MAGNETIC DISK 失效
公开(公告)号：JPH1153733A
公开(公告)日：1999-02-26
申请号：JP22077097
申请日：1997-08-01
申请人： EBARA CORP
发明人： WATANABE KENJI , HATAKEYAMA MASAKI , KUNITOMO SHINTA , ICHIKI KATSUNORI , SATAKE TORU , TAIMA YASUSHI , YAMAUCHI KAZUO , ISHIGURO JUICHI
IPC分类号： C03C19/00 , C03C23/00 , G11B5/73 , G11B5/82 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a magnetic disk by which the magnetic disk having a fine ruggedness structure of

17. 发明专利

JPH1145433A SUBSTRATE FOR MAGNETIC RECORDING AND ITS PRODUCTION 失效
公开(公告)号：JPH1145433A
公开(公告)日：1999-02-16
申请号：JP21564297
申请日：1997-07-25
申请人： EBARA CORP
发明人： HATAKEYAMA MASAKI , ICHIKI KATSUNORI , WATANABE KENJI , YAMAUCHI KAZUO , KUNITOMO SHINTA , TAIMA YASUSHI , SATAKE TORU
IPC分类号： C03C19/00 , C03C23/00 , G11B5/73 , G11B5/82 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To obtain a substrate with a fine and uniform surface and suitable for high-density magnetic recording by providing a texture structure consisting of fine projecting and recessing parts for decreasing friction resistance when a head and the substrate are brought into contact with the surface of the substrate and for controlling the floating amt. of the head and making the difference in level of the projecting and recessing parts to a specified value or lower and forming the projecting and recessing parts by using fast atomic beams and a shield. SOLUTION: The height of projecting and recessing parts worked on a substrate surface is made to

18. 发明专利

JP2003158099A ETCHING METHOD AND ETCHING DEVICE 审中-公开
公开(公告)号：JP2003158099A
公开(公告)日：2003-05-30
申请号：JP2001353809
申请日：2001-11-19
申请人： EBARA CORP , UNIV TOHOKU
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H01L21/28 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching method capable of making highly accurate working to a fine pattern and working of a high selection rate to a mask and a base layer be compatible without causing charge-up and etching shape abnormalities in a workpiece, and an etching device. SOLUTION: The etching method is provided with a first process of generating collimated neutral particle beams of >=10 eV and

19. 发明专利

JP2002289585A NEUTRAL PARTICLE BEAM TREATMENT DEVICE 失效
公开(公告)号：JP2002289585A
公开(公告)日：2002-10-04
申请号：JP2001088898
申请日：2001-03-26
申请人： EBARA CORP
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： G21K5/04 , B01J19/08 , C23C14/32 , C23C16/50 , H01J37/317 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a neutral beam treatment device which can apply a large- bore beam to a substance to be treated with low-cost and compact constitution, and enables processing such as highly accurate etching, film growth, etc. without damaging the substance to be treated. SOLUTION: This neutral particle beam treatment device is equipped with a treatment gas introduction port 11 which leads in treatment gas into a vacuum chamber, a plasma generation chamber 2 which generates positive ions and electrons from the led in treatment gas, a negative gas generation chamber 3 which generates negative ions by electrons generated in the plasma generation chamber 2 adhering to remaining gas, an ion extraction means 4 which draws out the above positive ions or negative ions and accelerates them in specified direction, and a neutralizing means 5 which forms a neutral particle beam by neutralizing the ion beam generated by the ion extraction means. This applies the neutral particle beam generated by the neutralizing means 5 to the substance X to be treated.

20. 发明专利

JP2002289582A NEUTRAL PARTICLE BEAM TREATMENT DEVICE 失效
公开(公告)号：JP2002289582A
公开(公告)日：2002-10-04
申请号：JP2001088860
申请日：2001-03-26
申请人： EBARA CORP
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J19/08 , C23C14/32 , C23C16/50 , H01J27/16 , H01J37/08 , H01J37/317 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H3/02
摘要： PROBLEM TO BE SOLVED: To provide a neutral particle beam treatment device which can apply a large-bore beam to a substance to be treated, at low-cost and compact constitution, and is hard to damage the substance to be treated. SOLUTION: This neutral particle beam treatment device possesses a plasma generation beam 10 which generates positive ions and/or negative ions in plasma, a pair of electrodes 5 and 6 which face each other including the plasma generated by that plasma generation means, and a voltage source 102 which applies voltage between those electrodes. The above electrodes 5 and 6 in a pair accelerate the positive ions and/or negative ions generated by the above plasma generation means, and the positive ions or negative ions become neutral particles 4 being neutralized while flying within the plasma 7 between the electrode in a pair toward the substance to be treated, and the accelerated neutral particles are applied to the substance X to be treated through the electrode 6 on the side of the substance to be treated.

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