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11. 发明专利

JP2003145354A ELECTROCHEMICAL MACHINING DEVICE AND BOARD TREATMENT DEVICE 审中-公开
公开(公告)号：JP2003145354A
公开(公告)日：2003-05-20
申请号：JP2001401436
申请日：2001-12-28
申请人： EBARA CORP
发明人： OBATA ITSUKI , SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , SAITO TAKAYUKI , TAIMA YASUSHI , SUZUKI TSUKURU , YAMADA KAORU , MAKITA YUJI
IPC分类号： B23H3/00 , B23H3/08 , B23H3/10 , B23H5/08 , B24B37/00 , B24B37/04 , C25D17/00 , C25F7/00 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3063
摘要： PROBLEM TO BE SOLVED: To machine a conducive material provided on the surface of a board to be flat and further remove (wash away) deposits from the surface of the board while, e.g. eliminating the need for CMP treatment itself, and reducing the load of the CMP treatment to a minimum. SOLUTION: This electrochemical machining device comprises a machining electrode 304 approachable to a workpiece, a power supply electrode 306 for supplying power to the workpiece W, an ion exchanger 314a or 314b arranged at least either between the workpiece W and the machining electrode 304 or between the workpiece W and the power supply electrode 306, a power source 312 for applying voltage between the machining electrode 304 and the power supply electrode 306, and a liquid supply part 316 for supplying a liquid between the workpiece W, where the ion exchanger 314a, 314b exists, and at least either the machining electrode 304 or the power supply electrode 306.

12. 发明专利

JP2008160134A Method for substrate treatment 审中-公开
标题翻译：基板处理方法
公开(公告)号：JP2008160134A
公开(公告)日：2008-07-10
申请号：JP2007332475
申请日：2007-12-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , YASUDA HOZUMI , OBATA ITSUKI , NOMICHI IKUTARO , YOSHIDA KAORI
IPC分类号： H01L21/3205 , B23H3/00 , B23H3/08 , B24B37/00 , C25F3/12 , C25F3/16 , C25F3/22 , C25F3/30 , H01L21/3063 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To replace a part of a substrate treatment processing with an electrolytic processing using deionized water, preferably ultrapure water or the like, and further to enable the performance of a processing with high efficiency and high planarity. SOLUTION: The removal processing of a conductive wiring material of a substrate surface is performed by an electrolytic processing using an ion exchanger 48d or 48e, and thereafter the removal processing of a barrier layer of the substrate surface is performed by an electrolytic processing using an ion exchanger 48f which is different from an ion exchanger 48d or 48e or by an electrolytic processing using an electrolyte. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：使用去离子水，优选超纯水等进行电解处理来代替基板处理工序的一部分，进一步实现高效率，高平坦化的加工。解决方案：通过使用离子交换器48d或48e的电解处理进行基板表面的导电布线材料的去除处理，然后通过电解处理进行基板表面的阻挡层的去除处理使用与离子交换器48d或48e不同的离子交换器48f，或者使用电解质的电解处理。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2005288580A Electrochemical machining method and device 审中-公开
标题翻译：电化学加工方法和装置
公开(公告)号：JP2005288580A
公开(公告)日：2005-10-20
申请号：JP2004104531
申请日：2004-03-31
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SUZUKI TSUKURU , SAITO TAKAYUKI , TAIMA YASUSHI , KODERA AKIRA , NOMICHI IKUTARO , YASUDA HOZUMI , IIIZUMI TAKESHI , OBATA ITSUKI , KUMEGAWA MASAYUKI
IPC分类号： B23H3/00 , B23H3/08 , B23H3/10 , H01L21/3063
摘要： PROBLEM TO BE SOLVED: To perform uniform machining with few pits and little surface roughness, even if unnecessary materials such as an oxide film, a hydroxide film or reduction precipitated metal are inevitably generated on a surface to be machined during machining. SOLUTION: The surface to be machined removed with reduction and/or oxide films is electrochemically machined by an electrochemical oxidizing action of a machining electrode 28 by relatively moving the machining electrode 28 made as a cathode and a workpiece W having the surface to be machined imparted with a reduction action and/or an oxide film removing action, while being mutually approached under the existence of fluid 14. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在加工中要加工的表面上不可避免地产生氧化膜，氢氧化物膜或还原沉淀金属等不必要的材料，也能够以少量的凹坑进行均匀加工，表面粗糙度小。解决方案：用还原和/或氧化物膜除去的表面通过机械电极28的电化学氧化作用被电化学加工，通过相对移动制成阴极的加工电极28和具有表面的工件W 在流体14的存在下相互接近时，被赋予赋予还原作用和/或氧化膜去除作用。（C）2006，JPO＆NCIPI

14. 发明专利

JP2004084054A Electrolytic processing method and device 审中-公开
公开(公告)号：JP2004084054A
公开(公告)日：2004-03-18
申请号：JP2003011661
申请日：2003-01-20
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YASUDA HOZUMI , OBATA ITSUKI , NABEYA OSAMU , KUMEGAWA MASAYUKI
IPC分类号： B23H3/00 , B23H9/00 , C25F3/00 , C25F7/00 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic processing method and device capable of processing a conductive material provided on the surface of a substrate to be flat and further removing (washing) a material stuck on the surface of a substance to be processed such as the substrate while dispensing with CMP treatment itself and reducing the load of the CMP treatment to the upmost for example. SOLUTION: The substrate W is brought into contact or brought close with a plurality of processing electrodes 72, and voltage is applied between the processing electrodes 72 and a power supply electrode 70 supplying power to the substrate W, and fluid is supplied between the substrate W and at least one of the processing electrode 72 or the power supply electrode 70, and the surface of the substrate W is processed by relatively moving the processing electrode 72 and the substrate W so that a plurality of processing electrodes 72 in which the degree of processing per unit time for each electrode are uneven may pass through a point on the surface to be processed of the substrate W. COPYRIGHT: (C)2004,JPO

15. 发明专利

JP2004060027A Electro-chemical machining method and apparatus 有权
公开(公告)号：JP2004060027A
公开(公告)日：2004-02-26
申请号：JP2002223313
申请日：2002-07-31
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI IKUTARO , YASUDA HOZUMI , OBATA ITSUKI , KUMEGAWA MASAYUKI
IPC分类号： B23H3/10 , C25F3/00 , H01L21/304 , H01L21/3063 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide an electro-chemical machining apparatus by which a conductive material provided on the surface of a substrate can flatly be machined, and further, depositions deposited on the surface of the object to be machined such as a substrate can be removed (cleaned) while, e.g., obviating CMP (Chemical Mechanical Polishing) treatment or reducing the load of CMP treatment as far as possible.
SOLUTION: The apparatus is provided with a working electrode 84, a power feeding electrode 86 feeding power to a substrate W, a holding part 42 holding the substrate W, and bringing the same into contact or close with the electrode 84, a power source 46 applying voltage to the space between the electrode 84 and the electrode 86, driving parts 56 and 60 relatively moving the substrate W held by the holding part 42 and the electrode 84, and partitions 91 and 93 separating the flow of a fluid on the side of the electrode 84 and the electrode 86 from the flow of a fluid on the side of the substrate W.
COPYRIGHT: (C)2004,JPO

16. 发明专利

JP2003291028A Electrochemical machining device 审中-公开
标题翻译：电化学加工设备
公开(公告)号：JP2003291028A
公开(公告)日：2003-10-14
申请号：JP2002096230
申请日：2002-03-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , YASUDA HOZUMI , OBATA ITSUKI
IPC分类号： B23H3/00 , B23H7/26
摘要： PROBLEM TO BE SOLVED: To provide an electrochemical machining device capable of stably detecting an end point of electrochemical machining with a relatively simple structure.
SOLUTION: This device includes an electrochemical machining part 50 including a machining electrode 66 and a feed electrode 68 and applying voltage between the machining electrode 66 and the feed electrode 68 to electrochemical machine a surface of a work W under existence of liquid; and a machining end point detection part 96 detecting change of friction force generated between at least one of the machining electrode 66 and the feed electrode 68 and the work W accompanied with machining to detect a machining end point.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够以相对简单的结构稳定地检测电化学加工的终点的电化学加工装置。解决方案：该装置包括电化学加工部件50，其包括加工电极66和馈电电极68，并且在加工电极66和馈电电极68之间施加电压，以在存在液体的情况下对工件W的表面进行电化学处理; 以及加工终点检测部96，其检测在加工用电极66和进给电极68中的至少一方之间产生的摩擦力的变化以及伴随加工的工件W，以检测加工终点。版权所有（C）2004，JPO

17. 发明专利

JP2003225830A ELECTROCHEMICAL MACHINING DEVICE AND METHOD 审中-公开
公开(公告)号：JP2003225830A
公开(公告)日：2003-08-12
申请号：JP2002022734
申请日：2002-01-31
申请人： EBARA CORP
发明人： SHIRAKASHI MICHIHIKO , KUMEGAWA MASAYUKI , YASUDA HOZUMI , OBATA ITSUKI
IPC分类号： B23H3/00 , B23H3/04 , B23H3/08 , B23H3/10 , C25F3/00 , C25F3/30 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To provide an electrochemical machining device capable of improving the inplane uniformity of a work face after machining by improving the uniformity of a machining speed of the whole of the work face. SOLUTION: The electrochemical machining device 101 is provided with a machining electrode 118 capable of approaching to a work piece W, a feeding electrode 136 for feeding the work piece, an ion exchanger 135 arranged in at least one of the work piece and the machining electrode or the work piece and the feeding electrode, and a fluid supplying part 129 supplying fluid between the work piece and the ion exchanger. At least one of the machining electrode or the feeding electrode is electrically divided into a plurality of pieces. A power source 123 is provided for applying a voltage to each of the divided electrodes and individually controlling at least one of a voltage or a current in regard to each of the divided electrodes. COPYRIGHT: (C)2003,JPO

18. 发明专利

JP2002220692A PLATING EQUIPMENT AND METHOD 失效
公开(公告)号：JP2002220692A
公开(公告)日：2002-08-09
申请号：JP2001016018
申请日：2001-01-24
申请人： EBARA CORP
发明人： SENDAI SATOSHI , TOMIOKA MASAYA , TSUDA KATSUMI , KUMEGAWA MASAYUKI , MISHIMA KOJI
IPC分类号： C25D5/04 , C25D7/12 , C25D17/00 , C25D21/04 , C25D21/10 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a plating equipment and a plating method, which prevent bubbles from staying on the surface to be treated, and allow a plating solution to smoothly contact the surface to be treated. SOLUTION: This plating equipment comprises, a plating tank 12 for retaining the plating solution 10 in which an anode 17 is immersed, a head part 14 for allowing the surface to be treated of the bottom surface of a substrate W, to contact an overflow surface of the plating solution 10 retained in the plating tank 12, by releasably holding the substrate W, a drive part 15 for rotating and moving up and down the head part 14, and a tilting part 16 for tilting the head part 14 so as to make the substrate W held by the head part 14 be aslant against a horizontal plane.

19. 发明专利

JP2001049495A PLATING DEVICE, AND PLATING METHOD 失效
公开(公告)号：JP2001049495A
公开(公告)日：2001-02-20
申请号：JP22889899
申请日：1999-08-12
申请人： EBARA CORP
发明人： SASABE KENICHI , HONGO AKIHISA , SENDAI SATOSHI , TOMIOKA MASAYA , TSUDA KATSUMI , KUMEGAWA MASAYUKI
IPC分类号： C25D5/08 , C25D7/00 , C25D7/12 , C25D17/00
摘要： PROBLEM TO BE SOLVED: To provide a jet plating device which is free from any deposition of a plating solution on a cathode electrode pin, and capable of plating a whole surface to be plated of a substrate in an excellent condition without bubbles while preventing any metallic pollution of sides or a reverse surface of the substrate, and its plating method. SOLUTION: This plating device comprises a cylindrical plating tank 12 to maintain a plating solution 10, a plating solution ejection part 18 to form a jet of the plating solution 10 directed upward by the plating solution 10 to be fed from the outside of the plating tank 12, a substrate holding part 14 to hold a substrate W in an attachable/detacbable manner and horizontally arrange the substrate so that a lower surface to be plated of the substrate W is brought into contact with the jet of the plating solution 10, and a drive part 44 having a rotating mechanism 38 and an elevating/lowering mechanism 42 to rotate and elevate/lower the substrate holding part 14. At the position where the substrate holding part 14 is lowered by the elevating/ lowering mechanism 42, the lower surface to be plated of the substrate W can be plated. At the position where the substrate holding part 14 is elevated by the elevating/ lowering mechanism 42, the substrate W can be attached to the substrate holding part 14, or the substrate W can be detached from the substrate holding part 14.

20. 发明专利

JP2008110471A Substrate polishing device, substrate polishing method, and substrate receiving method 有权
标题翻译：基板抛光装置，基板抛光方法和基板接收方法
公开(公告)号：JP2008110471A
公开(公告)日：2008-05-15
申请号：JP2007225805
申请日：2007-08-31
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KATSUOKA SEIJI , SEKIMOTO MASAHIKO , KUNISAWA JUNJI , MIYAZAKI MITSURU , WATANABE TERUYUKI , KOBAYASHI KENICHI , KUMEGAWA MASAYUKI , YOKOYAMA TOSHIO
IPC分类号： B24B7/24 , B24B37/00 , B24B37/015 , B24B37/04 , B24B37/12 , B24B37/30 , B24B41/06 , B24B53/017 , B24B53/02 , B24B55/02
CPC分类号： B24B37/04 , B24B55/02 , Y10S451/914
摘要： PROBLEM TO BE SOLVED: To provide a substrate polishing device, a substrate polishing method, and a substrate receiving method for polishing a substrate such as a large-size glass substrate with high degree of flatness and washing and drying it. SOLUTION: This substrate polishing device is provided with a substrate holding mechanism part 4 provided with a head 40 for holding the substrate G to be polished and a polishing mechanism part 3 provided with a turn table 60 to which a polishing pad 61 is attached to polish the substrate G by relative movement of the substrate G and the polishing pad 61 by pressing the substrate G sucked and held by the head 40 against the polishing pad on the turn table 60. This substrate polishing device is also provided with a pusher mechanism part 2 for delivering the substrate G before polishing to the head 40 and receiving the substrate G after polishing, a washing/drying part for washing and drying the substrate G after polishing, and a dresser unit 8 for putting the polishing pad 61 in a condition suitable for polishing. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于抛光具有高度平整度的大尺寸玻璃基板的基板的抛光和干燥的基板研磨装置，基板研磨方法和基板接收方法。解决方案：该基板研磨装置设置有基板保持机构部分4，该基板保持机构部分4设置有用于保持待抛光的基板G的头部40以及抛光机构部分3，抛光机构部分3设置有抛光垫61，抛光垫61 通过将由头部40吸收和保持的基板G压靠在转台60上的抛光垫上，通过基板G和抛光垫61的相对运动来附着以抛光基板G.该基板抛光装置还设置有推动器用于在抛光之前将基板G输送到头部40并在抛光之后接收基板G的机构部分2，用于在抛光之后洗涤和干燥基板G的洗涤/干燥部分，以及用于将抛光垫61放置在其中的修整器单元8 条件适合抛光。版权所有（C）2008，JPO＆INPIT

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