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11. 发明专利

JP2001243871A FUSE DEVICE 失效
公开(公告)号：JP2001243871A
公开(公告)日：2001-09-07
申请号：JP2000051339
申请日：2000-02-28
申请人： DAITO COMM APPARATUS CO LTD , NIPPON TELEGRAPH & TELEPHONE , SHINDENGEN ELECTRIC MFG , ORIGIN ELECTRIC
发明人： SATO HIROMI , HIROSE KEIICHI , YAMAZAKI MIKIO , MACHIDA KENGO , UENO SHINGO
IPC分类号： H01H85/30 , H01H85/045 , H01H85/11 , H01H85/143 , H01H85/175 , H01H85/20 , H01H85/36 , H01H85/48
摘要： PROBLEM TO BE SOLVED: To provide an accurately, positively and easily replaceable fuse device. SOLUTION: A hollow case body 21 is provided with a seeing-through display window 42. A fixed terminal 66 is provided, part of which is located in the case body 21. One end of a fusible body 76 fusible with an overcurrent is connected to a fixed terminal 66. A movable terminal 71, part of which is located in the case body 21, is tensely energized and connected to the other end of the fusible body 76. With the fusion of the fusible body 76, a fusion display portion 75 of the movable terminal 71 is moved to the display window 42. The fusion of the fusible body 76 can be identified from the outside via the display window 42 by the existence of the fusion display portion 75.

12. 发明专利

JP2002049904A IC CARD AND METHOD FOR CHANGING/ADDING PROCESSING PROGRAM MOUNTED ON IC CARD 失效
公开(公告)号：JP2002049904A
公开(公告)日：2002-02-15
申请号：JP2000238155
申请日：2000-08-07
申请人： TOKIN CORP , NIPPON TELEGRAPH & TELEPHONE , NTT ELECTRONICS CORP
发明人： SATO KENJI , INABE TOSHIHISA , SATO HIROMI , TSURU KOJI , OTANI YOSHIMITSU , NAGAI YASUHIRO , KODA SHIGETO , KASUYA AKIHIKO
IPC分类号： B42D15/10 , G06F1/00 , G06F21/22 , G06K17/00 , G06K19/07 , G06K19/10
摘要： PROBLEM TO BE SOLVED: To provide an IC card in which a mounted processing program can be changed and added without discarding the currently used IC card. SOLUTION: A part (hereafter, called patch program) of the processing program stored in a read only nonvolatile memory is stored in a readable and writable nonvolatile memory, and a program for performing the patch program is provided in the read only nonvolatile memory area.

13. 发明专利

JPH10198775A INFORMATION CARD 失效
公开(公告)号：JPH10198775A
公开(公告)日：1998-07-31
申请号：JP282197
申请日：1997-01-10
申请人： TOKIN CORP , NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIMURA SHINJI , TAKAHASHI AKIHIRO , SATO HIROMI
IPC分类号： B42D15/10 , G06K19/06
摘要： PROBLEM TO BE SOLVED: To provide an information card that is inconspicuous even when a flaw due to any cause, or sorting by dirst, discoloring at the time of printing work or attaching of the dirt of ink occur, the defect rate of products can be reduced, and printing cost is low. SOLUTION: This information card is composed of any one of magnetic card provided with a magnetic recording layer formed on one face at least on a holder and an IC card loading a semiconductor on this holder and a printing layer formed on one face at least on this holder is provided. In this case, one part of this printing layer is equipped with a printing pattern at least and concerning this printing pattern, string-shaped flaw patterns 3 and 4 and fine spot-shaped patterns 5, 6 and 8 are formed from continuous patterns distributedly existent at arbitrary positions in arbitrary directions.

14. 发明专利

JP2003099744A IC MODULE AND IC CARD 审中-公开
公开(公告)号：JP2003099744A
公开(公告)日：2003-04-04
申请号：JP2001291023
申请日：2001-09-25
申请人： NEC TOKIN CORP
发明人： SATO HIROMI , TAKAHASHI HIDEO
IPC分类号： B42D15/10 , G06K19/07 , G06K19/077 , H01L23/28
摘要： PROBLEM TO BE SOLVED: To provide an IC module making it hard for an IC chip to be broken by static electricity. SOLUTION: This IC module comprises an IC module substrate 2, the IC chip 3 disposed on the IC module substrate, mold resin 4 covering the IC chip, epoxy adhesive agent 5 applied onto the upper surface of the mold resin, and a conductive metal plate 6 adhered with the epoxy adhesive agent. The conductive metal plate is cut in the same shape as the mold resin, and formed in the thickness of 0.1 mm. Even when a conductive foil of approximately 20 μm in thickness is adopted in place of the conductive metal plate, a static electricity measure can be taken. The conductive metal plate can also be replaced by conductive paste. Since the IC chip is held between the conductive metal plate and the IC module substrate, it can be avoided that static electricity is discharged directly to the IC chip.

15. 发明专利

JP2014163906A Fine particle analysis device 有权
标题翻译：精细粒子分析装置
公开(公告)号：JP2014163906A
公开(公告)日：2014-09-08
申请号：JP2013037736
申请日：2013-02-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERADA KOICHI , SUGAYA MASAKAZU , KASHIMA HIDEO , NAGANO HISASHI , TAKADA YASUAKI , SATO HIROMI
IPC分类号： G01N1/02 , G01N1/22 , G01N15/00
CPC分类号： G01N33/0057 , G01N1/2202 , G01N1/2205 , G01N1/2273 , G01N15/00 , G01N2001/022 , G01N2001/2288 , Y02A50/25
摘要： PROBLEM TO BE SOLVED: To achieve an explosive detecting device capable of maintaining high availability even in environment with many contaminants.SOLUTION: A plurality of collecting, heating, and evaporating filters 2 for collecting, heating and evaporating particulates and are prepared in advance. A device has a means for sequentially replacing the filters. Moreover, a preheating section 52 that preheats the filters before use is provided, and the area between the plurality of filters is sealed by a seal section.
摘要翻译：要解决的问题：实现即使在具有许多污染物的环境中也能够保持高可用性的爆炸检测装置。解决方案：用于收集，加热和蒸发微粒的多个收集，加热和蒸发过滤器2，并且预先制备。装置具有用于顺序地更换过滤器的装置。此外，设置了在使用前预热过滤器的预热部分52，并且多个过滤器之间的区域被密封部分密封。

16. 发明专利

JPH01285566A HYDRAULIC ELEVATOR CONTROL DEVICE 失效
公开(公告)号：JPH01285566A
公开(公告)日：1989-11-16
申请号：JP11245088
申请日：1988-05-11
申请人： HITACHI LTD
发明人： SATO HIROMI , MURONO MASAHITO
IPC分类号： B66B1/40 , B66B1/04
摘要： PURPOSE:To make it possible to align floors with each other even in a range in which a floor misalignment detecting device is not actuated, by providing such an arrangement that when waiting for a predetermined time is detected, a cage is lowered to a position in such a range that the floor misalignment detecting device is actuated by force. CONSTITUTION:When a cage is at a position in a range in which a floor misalignment detecting switch is not actuated, since a contact B2 is closed, if a contact H2 is closed in association with a turn-on of an up button 1U in an elevator hall on the first story, a downward inching operation relay D is turned on so as to close its contact D2. As a result, an downward inching compensating device S2 is actuated, so as to run the cage downward. When the cage is lowered to a position in a range in which the floor misalignment detecting switch is actuated, the switch is actuated, resulting in energization of a floor misalignment detecting relay B, and accordingly, a contact B2 is closed while the contact B2 is opened. Further, the downward inching operation relay D is turned off while the downward inching compensating device S2 comes to a stop once, or a floor aligning operation relay U is turned on while an upward inching compensating device S1 is actuated, thereby the upward floor aligning operation is carried out.

17. 发明专利

JPH0786162A METHOD AND EQUIPMENT FOR GROWING HETERO STRUCTURE THIN FILM 失效
公开(公告)号：JPH0786162A
公开(公告)日：1995-03-31
申请号：JP22719693
申请日：1993-09-13
申请人： HITACHI LTD
发明人： KASHIMA HIDEO , BUSSHU TERUO , HOSOMI KAZUHIKO , SATO HIROMI , OUCHI KIYOSHI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/203 , H01L21/205 , H01L21/363
摘要： PURPOSE:To obtain a extremely steep high quality hetero structure thin film having a desired compositional ratio by interrupting the introduction of material gas for a predetermined time after growing a first semiconductor thin film on a substrate and then introducing the material gas of second semiconductor thin film onto the substrate thereby depositing a film. CONSTITUTION:At first, supply of group IIIa material to a substrate is interrupted to terminate the growth of IIIaVa thin films. In this regard, supply of group Va material is sustained for a time t1. Supply of group Va material to the substrate is then stopped followed by interruption of the supply of any thin film material to the substrate for a time t2 During the time interval t1, aforementioned state is sustained and the supply of IIIbVb thin film material, i.e., one of group Vb or group IIIb material, is resumed and upon elapse of a time t3, supply of the other material is started or both materials are supplied simultaneously thus starting growth of IIIbVb thin film. The time interval for interrupting materia 1 gas supply is set equal to the time required for depositing a single molecule layer of group V or III element on the substrate.

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