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11. 发明专利

JP2003329567A Method of producing spm sensor 有权
标题翻译：生产SPM传感器的方法
公开(公告)号：JP2003329567A
公开(公告)日：2003-11-19
申请号：JP2003077605
申请日：2003-03-20
申请人： Nanoworld Ag , ナノワールドアーゲー
发明人： LUTTER STEFAN
IPC分类号： B81B3/00 , B81C1/00 , G01Q70/10 , G01Q70/16 , G01N13/16 , G01N13/12
CPC分类号： G01Q70/16 , G01Q70/10
摘要： PROBLEM TO BE SOLVED: To provide a method of producing an SPM sensor being composed of a holding section 4, a cantilever 18 and a sensor tip 21 so that the sensor tip 21 projects from the surface of the cantilever 18 and is defined its boundary by three facets. SOLUTION: In the producing method, a silicon wafer 1 with the crystal orientation (100) is used as a starting material, and a process of forming a pattern is chiefly carried out on the back of the wafer 1, and a process of single batch run is carried out by chiefly using a wet chemical etching process, and thereby producing the SPM sensor 22 at a low cost. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种由保持部分4，悬臂18和传感器末端21组成的SPM传感器的方法，以便传感器尖端21从悬臂18的表面伸出并被限定其边界由三个方面。解决方案：在制造方法中，使用具有晶体取向（100）的硅晶片1作为起始材料，并且主要在晶片1的背面进行形成图案的工艺，以及工艺通过主要使用湿化学蚀刻工艺进行单批次运行，从而以低成本生产SPM传感器22。版权所有（C）2004，JPO

12. 发明专利

JP2003115536A SEMICONDUCTOR COMPONENT INSIDE WAFER ASSEMBLY AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003115536A
公开(公告)日：2003-04-18
申请号：JP2002183019
申请日：2002-06-24
申请人： NANOWORLD AG
发明人： LUTTER STEFAN
IPC分类号： H01L21/78 , B81B3/00 , B81C1/00 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor component inside a wafer assembly in which the problem of the generation or the like of chips is not generated when the semiconductor component connected to a frame via a holding part is broken and separated from the frame. SOLUTION: The semiconductor component 2 inside the wafer assembly which is connected to the frame 1 by one holding part 4 in each case or which is formed on the same silicon wafer is disclosed. The holding part 4 connects each component to the frame 1 on one side face, and it has a desirable break point. The desirable break point is designed as a V-shaped groove part 6, and its surface forms a (111) crystal plane. On the basis of the method, a pattern used to produce the holding part 4 is formed by the wet chemical anisotropic etching operation of the V-shaped groove part 6 continued to the back of the wafer. The holding part 4 is produced independently of the working operation of the front of the wafer. When the semiconductor component 2 is removed, a decided break end part is formed without the risk of the semiconductor component 2 being damaged.

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