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    • 111. 发明专利
    • Semiconductor memory cell
    • 半导体存储器单元
    • JPS61104655A
    • 1986-05-22
    • JP22573884
    • 1984-10-29
    • Hitachi Ltd
    • HONMA NORIYUKINAKAMURA TORUNAKAZATO KAZUOMATSUMOTO MASAAKIHAYASHIDA TETSUYAKUBO SEIJISAGARA KAZUHIKO
    • H01L29/73G11C11/41H01L21/331H01L21/8229H01L27/10H01L27/102H01L29/732
    • H01L27/1025
    • PURPOSE:To obtain the small-sized memory cell reinforced in alpha-ray resistance which needs of addition of capacitors, by a method wherein a transistor is set in reverse action. CONSTITUTION:The conventional collector is used as the emitter of a transistor, and the conventional emitter as the collector. Therefore, a region n BL50 corresponds to an emitter 60 of the circuit diagram, and a region n BL51 to an emitter 61. (the emitters 60, 61 are regions n BL, which is shown by bold lines). This shows that electrons collecting to the regions n BL51, 51 collect to a bit line 62 and a word line 63, respectively; accordingly, these charges do not contribute to information breakdown. Then, with respect to the soft error caused by alpha rays, only charges generating in transistor parts (n , p, n parts) above the regions n BL can be considered, and the amount of charges generating in this part is much smaller than that in the Si p-substrate. Consequently, the title element becomes substantially strong to the soft error caused by alpha rays.
    • 目的:为了获得需要添加电容器的α射线电阻增强的小型存储单元,通过其中晶体管被设置为反向动作的方法。 构成:传统的集电极用作晶体管的发射极,常规的发射极用作集电极。 因此,区域n + BL50对应于电路图的发射极60,和发射极61的区域n + BL51(发射极60,61是区域n + BL,由 粗线)。 这表明收集到区域n + BL51,51的电子分别收集到位线62和字线63; 因此,这些费用不会对信息进行破坏。 然后,对于由α射线引起的软误差,仅考虑在区域n + BL以上的晶体管部分(n +,p,n - )部分产生的电荷,并且电荷量 在该部分中的产生比Si p基板中的产生要小得多。 因此,标题元素对于由α射线引起的软误差变得基本上很强。
    • 113. 发明专利
    • SEMICONDUCTOR CURRENT SOURCE CIRCUIT
    • JPS6095790A
    • 1985-05-29
    • JP20093383
    • 1983-10-28
    • HITACHI LTD
    • MATSUMOTO MASAAKIHONMA NORIYUKI
    • G11C11/414G11C11/34H03F3/34H03F3/347
    • PURPOSE:To decrease the dropping time of the potential of a signal line and to reduce the power consumption by producing a large current only when the signal line is changed to a low potential from a high potential and discharging quickly the capacity of the signal line. CONSTITUTION:When the anode of a diode D1 of a potential transmitting circuit 10 is changed to a low potential from a high potential, this change of potential is transmitted with no delay to the base of a PNP transistor TRQ3 of a pulse current source circuit 12 via a Schottky diode D2. While said potential change is transmitted to the base of an NPN TRQ2 of the cirfuit 12 via a potential delay circuit 14 after a delay time corresponding to a time constant obtained by a resistance R2 and a capacitor C1. Then the circuit 12 is turned on when the difference between bases of TRQ2 and Q3 is set at a prescribed level. Thus a large pulse current is produced via a constant current source I1, and the capacity of a signal line connected to a juncture part P is quickly discharged. This decreases the dropping time of the signal potential and also stops the flow of a large current in a steady mode. Thus the power consumption is reduced.
    • 114. 发明专利
    • SEMICONDUCTOR STORAGE CIRCUIT DEVICE
    • JPS59221890A
    • 1984-12-13
    • JP9571983
    • 1983-06-01
    • HITACHI LTD
    • MATSUMOTO MASAAKI
    • G11C11/414G11C11/34
    • PURPOSE:To drive a storage device in high speed with low power consumption by connecting three sets of transistors (TRs) connected between word and hold lines in Darligton connection, flowing a current only at the selection and also quickening the charge/discharge of the word line. CONSTITUTION:In bringing a base of a TRQSn or the like to a high potential, a node SWn and a word line WDn go to a high potential and TRs QIn, QJn and QKn in Darlington connection between the line WDn and the hold line HLn via a level shift diode DIn and a resistor RIn for high time constant, etc. are turned on. Further, a current flows to the TRs only at the selection and the power consumption is reduced. Moreover, the base of the TRQIn is controlled by the diode DIn and the resistor RIn or the like, the charge/discharge of the node SWn via the TRQIn is attained in high speed, and the selection/nonselection of the line WDn is switched in high speed. Through the constitution above, the driving circuit of bipolar RAM is activated in high speed with low power consumption.
    • 115. 发明专利
    • Semiconductor driving circuit device
    • 半导体驱动电路设备
    • JPS58203695A
    • 1983-11-28
    • JP8661882
    • 1982-05-24
    • Hitachi Ltd
    • MATSUMOTO MASAAKIKITSUKAWA GOROU
    • G11C11/415G11C8/08
    • G11C8/08
    • PURPOSE:To reduce the descending time of a subword line or word line and the consumption of electric power, and to realize high integration, by making a constitution so that operating current is supplied to the subword line or word line from a constant current source, only at selected time. CONSTITUTION:If the electric potential of both of input signals An1 and An2 becomes lower than a reference voltage V1, TRs Qa1 and Qa2 are turned off, electric potential Vn1 and also the electric potential Vn2 of a subword one Xn' and the electric potential Vn3 of a word line are turned over to be high electric potential. Since the electric potential Vn2 of the subword line selected at this moment, is higher than the electric potential of other subword lines which are in non-selected state, the current of constant current source consisting of a TR Qc and register Rc runs only through a diode Dn connected to the subword line Xn'. If one of the input signals An1 and An2 is turned over to be high electric potential to exceed the reference voltage V1, the electric potential Vn1 is turned over to be low electric potential to pull out stored electric charge of stray capacitance Cn with high speed. Since only one unit of constant current source is provided, low electric power consumption and high integration are realized.
    • 目的:为了减少字线或字线的下降时间和电力消耗,并实现高集成度,通过构成使得从恒流源向副字线或字线提供工作电流的结构, 只在选定的时间。 构成:如果输入信号An1和An2两者的电位变得低于参考电压V1,则关闭TRs Qa1和Qa2,将电位Vn1和子字Xn'的电位Vn2和电位Vn3 字线被翻转成高电位。 由于此时所选择的副词线的电位Vn2高于未选择状态的其他子字线的电位,所以由TR Qc和寄存器Rc构成的恒流源的电流仅通过 二极管Dn连接到子字线Xn'。 如果输入信号An1和An2中的一个被转换为高电位以超过参考电压V1,则电位Vn1转为低电位以高速地拉出寄存电容Cn的存储电荷。 由于只提供一个恒流源单元,实现了低功耗和高集成度。
    • 119. 发明专利
    • MAGNETIC HEAD SLIDER AND ITS MANUFACTURE
    • JPH10302238A
    • 1998-11-13
    • JP10443597
    • 1997-04-22
    • HITACHI LTD
    • SONOBE HIDEKIMIZUSHIMA AKIKOKODAIRA HIDEKAZUMATSUMOTO MASAAKIFURUSAWA KENJI
    • G11B5/60G11B21/21
    • PROBLEM TO BE SOLVED: To provide a magnetic head slider which enables reduction in an adhesive force of magnetic slider for a magnetic recording medium and prevention of thermal asperity(T.A.) trouble, and also provide a method of manufacturing the same and a magnetic disk apparatus. SOLUTION: At least three projections 7 are provided to sandwich a load point 18 on a slider rail surface 3 near the air incoming end 9 and air outgoing end 10 of a magnetic head slider 1, height of projection is set to 20 to 70 nm and total surface area of projection in contact with the magnetic recording medium surface is set to 0.005 to 0.15 mm , these projections come in contact with the magnetic recording medium surface at the time when the magnetic recording medium rotation is stopped, and the slider rail surface does not come in contact with it but is isolated from the magnetic recording medium. Therefore, a magnetic disk apparatus can easily be realized in which an adhesive force for the magnetic recording medium can be reduced, T.A. trouble can be prevented effectively in the magnetic head slider comprising particularly an MR head, and high density recording by a smooth magnetic recording medium can be realized.