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91. 发明专利

JPH0614553B2 失效
公开(公告)号：JPH0614553B2
公开(公告)日：1994-02-23
申请号：JP7361083
申请日：1983-04-26
申请人： NIPPON DENSO CO
发明人： MORI MASAAKI , TAKEUCHI YUKIHISA , MAEKAWA KENJI , NISHIZAWA TOSHIAKI , OKAMOTO YASUHIDE
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0376

92. 发明专利

JPH04275467A PHOTOTRANSISTOR 失效
公开(公告)号：JPH04275467A
公开(公告)日：1992-10-01
申请号：JP3744991
申请日：1991-03-04
申请人： SANYO ELECTRIC CO
发明人： NOGUCHI SHIGERU , IWATA HIROSHI , SANO KEIICHI
IPC分类号： H01L31/10 , H01L31/0376 , H01L31/11
摘要： PURPOSE:To provide a phototransistor whose photosensitivity is enhanced by reducing an interface level frequently existing near a semiconductor junction between a single crystalline semiconductor of one conductivity type and an amorphous semiconductor of the other conductivity type of the phototransistor. CONSTITUTION:An amorphous semiconductor 3 containing no conductivity determining impurity is interposed between a single crystalline semiconductor 2 of one conductivity type and an amorphous semiconductor 4, of the other conductivity type, and its light incident side is disposed at the other conductivity type semiconductor side.

93. 发明专利

JPH04266066A PHOTOELECTROMOTIVE FORCE ELEMENT 失效
公开(公告)号：JPH04266066A
公开(公告)日：1992-09-22
申请号：JP4558891
申请日：1991-02-20
申请人： CANON KK
发明人： MATSUDA KOICHI , MURAKAMI TSUTOMU , MATSUYAMA FUKATERU , YAMASHITA TOSHIHIRO , OKADA NAOTO
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/0376 , H01L31/0392 , H01L31/065 , H01L31/075 , H01L31/20
摘要： PURPOSE:To obtain a solar cell without any light deterioration and a high conversion efficiency by specifying a ratio between a silicon gas and a germanium gas used for forming a film and a composition ratio between silicon and germanium for a direction of film thickness within amorphous silicon germanium region. CONSTITUTION:A layer region which does not include an i-type semiconductor layer 304 is located at a side of a p-type semiconductor layer 305. A maximum composition ratio of germanium element within the layer region including amorphous silicon germanium is 20-70atom%. A composition ratio of germanium element within a layer region including the amorphous silicon germanium is 0 at a side of an n-type semiconductor 303. Then, it increases toward a side of a p-type semiconductor 305, the degree of increase is larger at the side of the n-type semiconductor 303 than that at the side of the p-type semiconductor 305 and the composition ratio of germanium element at a center portion in film direction is equal to or more than 75% of the maximum composition ratio of the germanium element.

94. 发明专利

JPH04261071A PHOTOELECTRIC CONVERTER 失效
公开(公告)号：JPH04261071A
公开(公告)日：1992-09-17
申请号：JP1259591
申请日：1991-01-11
申请人： CANON KK
发明人： SUGAWA SHIGETOSHI , GOFUKU IHACHIROU
IPC分类号： H01L27/146 , H01L31/0376 , H01L31/10 , H01L31/105 , H01L31/20
摘要： PURPOSE:To enhance the low afterimage property by a method wherein a charge implantation preventive layer is formed of a P type or N type amorphous semiconductor layer in contact with an I layer as well as a semiconductor layer containing P type or N type fine crystal. CONSTITUTION:Cr is deposited on a glass substrate 11 by sputtering and then etched away in specific shape to form a lower electrode 12 comprising a photodiode. Next, the substrate 11 is heated at specific temperature using a capacity coupled type CVD device and then specific amount of SiH4, PH3, and H2 are led-in to be discharged meeting the specific requirements so as to deposit an N type amorphous silicon layer 13 250Angstrom thick containing fine crystal. Successively, the substrate 11 is heated again at specific temperature using the same capacity coupled type CVD device and then specific amount of SiH4, PH3 and H2 are led-in again to be discharged meeting the specific requirements so as to deposit another N type amorphous silicon layer 14 100Angstrom thick for the completion of an N type charge preventive layer. Likewise, a P type amorphous semiconductor layer 17 containing the fine crystal 250Angstrom thick is deposited to complete a P type charge preventive layer.

95. 发明专利

JPH02260662A PHOTOVOLTAIC DEVICE 失效
公开(公告)号：JPH02260662A
公开(公告)日：1990-10-23
申请号：JP8310489
申请日：1989-03-31
申请人： SANYO ELECTRIC CO
发明人： OKAMOTO SHINGO , TAKAHAMA TAKESHI , NISHIKOKU MASATO , NAKANO SHOICHI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/0747 , H01L31/075 , H01L31/20
摘要： PURPOSE:To restrain dopant or the like from diffusing and separating to improve a photovoltaic device in thermal stability, and to lessen it in photo- deterioration by a method wherein the amount of hydrogen contained in a first semiconductor layer provided between a second semiconductor layer and the conductive surface of a substrate is set equal to or lower than a prescribed value. CONSTITUTION:A certain conductivity type semiconductor layer 31, an intrinsic or a substantially intrinsic second semiconductor layer 32, and an opposite conductivity type third semiconductor layer 33 are successively piled on the conductive surface of a substrate 1. Hydrogen is contained in the layers 31, 32, and 33, the amount of hydrogen contained in the layer 31 provided between the layer 33 and the conductive face of the substrate 1 is set to 10% or below, and the layer 32 is formed of amorphous semiconductor. The amount of hydrogen contained in the layer 32 is set to nearly 10% or below the same as the layer 31. Moreover, light rays are incident on the layer 32 passing through the layer 31. The layer 31 is made to contain a band gap enhancing element other than hydrogen so as to be improved in optical band gap as compared with the layer 32.

96. 发明专利

JPS6318667A PHOTOELECTRIC TRANSDUCER DEVICE 失效
公开(公告)号：JPS6318667A
公开(公告)日：1988-01-26
申请号：JP16212886
申请日：1986-07-11
申请人： CANON KK
发明人： SHINOHARA MASATO , YONEHARA TAKAO
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0376 , H01L31/10 , H01L31/11 , H01L31/113 , H01L31/18 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374
摘要： PURPOSE:To implement high density and high resolution, by forming a switching circuit, which controls a control electrode at a desired voltage on a layer, which is different from a semiconductor transistor and a capacitor. CONSTITUTION:An epitaxial layer 103 is formed on an n-type substrate 101. A P-type base region 104 and an n type emitter region are formed. An insulating layer 107 is provided on the layer 103. A capacitor electrode 109 is provided thereon so as to face the region 104. Such a TR is made to be a lower layer. An insulating layer 113 of SiO2 and the like are provided thereon. An n-type single crystal Si layer 114 is formed in a recess part of the layer 113 by a single crystal growing method. A gate oxide film, a gate electrode 108 and source/drain regions are constituted on the Si layer 114, and an MOSTR 115 is formed. Then, the TR is turned ON by refreshing operation. The electric charge in the region 104 is removed through the electrode, which is grounded through an interconnection 116 and the TR 115. Thus, the device can be readily miniaturized even if the number of terminals is charge.

97. 发明专利

JPS62234379A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62234379A
公开(公告)日：1987-10-14
申请号：JP7859886
申请日：1986-04-04
申请人： KANEGAFUCHI CHEMICAL IND
发明人： YAMAGISHI HIDEO , YAMAGUCHI YOSHINORI , ASAOKA KEIZO , HIROE AKIHIKO , KONDO MASATAKA , TSUSHIMO KAZUNAGA , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/06 , H01L31/075 , H01L31/076
摘要： PURPOSE:To obtain a high-performance amorphous silicon multijunction type solar cell by a method wherein a high concentration impurity layer which has an impurity concentration high enough to accelerate carrier recombination is provided in an n-p or p-n boundary part. CONSTITUTION:A high concentration impurity layer which has an impurity concentraion high enough to accelerate carrier recombination is provided in an n-p or p-n boundary part of a multijunction type photosensor. If the n-p or p-n boundary part is composed of the partial layers of the p-type layer and/or the n-type layer, the thickness of that part is usually 10-700 Angstrom approximately. The n-p or p-n boundary part may be the partial layers 4 and 5 of a p-typelayer 3 and/or n-type layer 2 which are contacted with the n-p or p-n boundary 1 or a new layer which is doped with element other than p-type dopant or n-type dopant and is provided between the n-type layer and the p-type layer of the n-p or p-n boundary or the combination of them. With this constitution, eta, Voc and FF of a solar battery can be improved.

98. 发明专利

JPS62196876A PHOTOSENSOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62196876A
公开(公告)日：1987-08-31
申请号：JP3831386
申请日：1986-02-25
申请人： CANON KK
发明人： KAWAKAMI SOICHIRO , ITABASHI SATORU , FURUSHIMA TERUHIKO , SHOJI TATSUMI , FUKAYA MASAKI
IPC分类号： H01L31/0248 , H01L31/0376 , H01L31/09
摘要： PURPOSE:To obtain sufficiently preferable photoelectric conversion characteristic in a photosensor by setting the hydrogen content and the impurity content in a photoelectric conversion layer to predetermined values to increase the ratio of a photo current to a dark current. CONSTITUTION:An amorphous silicon photoconductive layer 22 is formed on a glass substrate 21, and a pectinated electrode 24 is formed through an N type layer of an ohmic contact layer is formed thereon. The layer 22 is deposited with gas in which silane gas and impurity gas containing at least ones of nitrogen atoms and oxygen atoms are mixed as material gas in such a manner that the depositing speed at that time is 100Angstrom /min or higher. The layer 22 contains 10-60atom% of hydrogen with respect to silicon atoms, and contains 100atoms-ppm - 5atom% of all elements except the silicon containing no hydrogen with respect to the silicon atoms.

99. 发明专利

JPS61244075A AMORPHOUS SILICON PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPS61244075A
公开(公告)日：1986-10-30
申请号：JP8536585
申请日：1985-04-23
申请人： RICOH KK , RICHO OYO DENSHI KENKYUSHO KK
发明人： KUMANO KATSUFUMI , HAGA KOICHI , YAMAMOTO KENJI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/06 , H01L31/075 , H01L31/18
摘要： PURPOSE:To improve a photoelectric conversion efficiency by a method wherein at least one layer, which contains oxygen atoms, nitrogen atoms and carbon atoms and is photoconductive in the region where an optical band gap is 2.0eV or higher, is provided in an amorphous silicon layer of a multi-layer structure. CONSTITUTION:A transparent conductive film 12 is formed on a supporting substrate 11 and a P type a-Si film 13, an I-type or N type a-Si film 14 and an N type a-Si film 15 are successively laminated on it and a metal electrode film 16 is formed on top. The a-Si is produced from SiH4 decomposed by energy of a glow discharge or the like and deposited while containing oxygen atoms, nitrogen atoms and carbon atoms to form the P type a-Si film 13. This P type a-Si film 13 is photoconductive in the region where an optical band gap is 2.0eV or higher. With this constitution, a high photoelectric conversion efficiency can be obtained.

100. 发明专利

JPS61224353A IMAGE SENSOR 失效
公开(公告)号：JPS61224353A
公开(公告)日：1986-10-06
申请号：JP6551485
申请日：1985-03-28
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： ITOZAKI HIDEO , FUJITA NOBUHIKO , ICHIYANAGI HAJIME
IPC分类号： G01J1/02 , G03G5/082 , H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/0376 , H01L31/20
摘要： PURPOSE:To obtain an a-SiGe:H film which is excellent in photoelectric conductivity under the conditions of a definite pressure, intensity of light and the temperature of a substrate by optical CVD using one of SiH4, Si2H4 or SiF4 or GeF4, or further adding B and diluting with H2 as required. CONSTITUTION:A mixed gas of SiH4 or Si2H6 and GeH4 or GeF4 is introduced 6 in a reaction bath 1 and kept to 0.5-15 torr, the reduction of film forming speed is prevented, the appropriate film forming speed is kept by irradiating ultraviolet rays of 10-100 mW/cm through a quartz glass window 2 and the deterioration of film characteristics is prevented. The temperature of a substrate is also kept at 150-250 deg.C and the generation of a defect due to the reduction of photoelectric conductivity or the reduction of the content of H is prevented. Further, if 10 -10 stoms/cc of B are added, the sensitivity for a long wavelength is increased. This method causes no damage of a film since plasma is not used, the efficiency of Ge addition by optical CVD is also high, a high performance a-SiGe:H film is obtained and an image sensor which is excellent in the sensitivity to a long wavelength can be manufactured.

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