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91. 发明专利

JP3992800B2 Method for producing a single crystal manufacturing equipment and single crystal 失效
公开(公告)号：JP3992800B2
公开(公告)日：2007-10-17
申请号：JP27509797
申请日：1997-09-22
申请人： Sumco Techxiv株式会社
发明人：芳行島貫 , 敏朗琴岡 , 誠鴨川
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088

92. 发明专利

JP2007091493A Apparatus for pulling single crystal silicon, and method and apparatus for preventing contamination of silicon melt 有权
标题翻译：用于拉伸单晶硅的装置，以及防止硅胶污染的方法和装置
公开(公告)号：JP2007091493A
公开(公告)日：2007-04-12
申请号：JP2005279979
申请日：2005-09-27
申请人： Sumco Techxiv株式会社 , Sumco Techxiv Corp
发明人： KAMOGAWA MAKOTO , SHIMOMURA KURAICHI , SUZUKI YOSHIYUKI , EBI DAISUKE
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for preventing the deterioration of the quality of a single crystal silicon by reducing falling of dust to a silicon melt. SOLUTION: The flow rate of Ar gas passing through the gap between the lower end of a cylindrical body 6 and a heat shielding body 5 is controlled by adjusting the relative position of a passage for pulling the single crystal silicon, the cylindrical body 6 and the heat shielding body 5. For example, when the area of the cross section, included in the flat surface orthogonal to the pulling axis of the crystal, in the annular space formed with the side surface of the single crystal silicon and the inner wall surface of the cylindrical body is denoted as S1, and the area of the side surface of a part, positioned between the cylindrical body and the heat shielding body, in the cylindrical space extending from the lower end of the cylindrical body 6 is denoted as S2, the ratio S2/S1 is adjusted to be COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过减少灰尘落入硅熔体来防止单晶硅质量劣化的装置。解决方案：通过调节圆柱体6的下端与隔热体5之间的间隙的Ar气体的流量，通过调整用于拉出单晶硅的通道的相对位置来控制，圆筒体例如，在与单晶硅的侧面形成的环状空间中的包含在与晶体的牵引轴正交的平坦面的截面的面积和内部圆柱体的壁面表示为S1，位于筒状体与隔热体之间的部分的侧面的面积从圆筒体6的下端延伸的圆筒状空间中的面积表示为 S2，比例S2 / S1被调整为<1.15。版权所有（C）2007，JPO＆INPIT

93. 发明专利

JP3808135B2 Single crystal manufacturing apparatus 失效
公开(公告)号：JP3808135B2
公开(公告)日：2006-08-09
申请号：JP18800796
申请日：1996-06-13
申请人：コマツ電子金属株式会社
发明人：庫一下村 , 吉信平石
IPC分类号： C30B15/32 , C30B15/14 , C30B29/06 , H01L21/208
CPC分类号： C30B15/14 , Y10S117/911 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088

94. 发明专利

JP2006512749A Single-shot semiconductor processing system and method having various irradiation pattern 审中-公开
公开(公告)号：JP2006512749A
公开(公告)日：2006-04-13
申请号：JP2004529135
申请日：2003-08-19
申请人：ザトラスティーズオブコロンビアユニヴァーシティインザシティオブニューヨーク
发明人：エスイムジェイムス
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02 , H01L21/2026 , H01L21/324 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1088
摘要： High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more pulses. The beam pulses have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beam have dimensions and orientations that are conductive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the workpiece at high speeds. Position sensitive triggering of a laser can be used to generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.

95. 发明专利

JP2004123510A Apparatus for manufacturing single crystal and method for manufacturing the same 有权
公开(公告)号：JP2004123510A
公开(公告)日：2004-04-22
申请号：JP2003150713
申请日：2003-05-28
申请人： Hitachi Chem Co Ltd , Hitachi Ltd , 日立化成工業株式会社 , 株式会社日立製作所
发明人： HIRASAWA SHIGEKI , IKEGAWA MASATO , ISHIBASHI HIROYUKI , GUNJI AKIHIRO
IPC分类号： C30B15/00 , C30B1/00 , C30B15/14 , C30B35/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a technology for manufacturing a single crystal capable of lowering a fraction defective in manufacturing the single crystal. SOLUTION: The apparatus for manufacturing the single crystal is provided with a crucible 1 for housing a raw material, a heating means 11 for heating the raw materials in the crucible 1 and a crystal moving means 17 for upwardly moving a seed crystal 13 from the interior of the crucible 1. The apparatus consists of the configuration provided with a heat-transfer member 3 which extends upward from the vicinity of the upper end portion of at least the side wall of the crucible 1, encloses the formed single crystal 15 and is formed of a material having heat conductivity, and a boundary portion radiation heat shielding body 7 which shields the upward radiation heat from the boundary portion between a tapered part 15a of the gradually expanding diameter continuous with the seed crystal 13 of the formed single crystal 15 and a cylindrical straight trunk part 15b continuous with the tapered part 15a of the formed single crystal 15 at least in cooling after the growth of the single crystal. As a result, the temperature differences in the radial direction of the single crystal 15 can be decreased, the occurrence of of defects and cracks can be reduced and the fraction defective in manufacturing of the single crystal can be lowered. COPYRIGHT: (C)2004,JPO

96. 发明专利

JP2003297840A Heat treatment method for silicon wafer, and silicon wafer treated with the method 审中-公开
标题翻译：用于硅砂的热处理方法和用该方法处理的硅波
公开(公告)号：JP2003297840A
公开(公告)日：2003-10-17
申请号：JP2003029617
申请日：2003-02-06
申请人： Wacker Siltronic Ag , ワッカージルトロニックアクチエンゲゼルシャフト
发明人： HOELZL ROBERT , SEURING CHRISTOPH , WAHLICH REINHOLD , VON AMMON WILFRIED
IPC分类号： C30B33/00 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225 , H01L21/324 , Y10T117/1088
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method for a silicon wafer which does not have defects of a prior art, is performed economically, and further not only does not contain COPs only in an area close to its surface, but also does not contain COPs over the main portion of the thickness of the wafer, and further provides a silicon wafer obtained by the method. SOLUTION: The manufacturing method is performed such that a silicon wafer is exposed to an oxygen-containing atmosphere at least temporarily, and thereupon, heat treatment is performed at a temperature selected to satisfy an inequality expression (1) claimed in the claim 1. The silicon wafer has the density of the center of nucleus formation for separating oxygen of at least 10 7 cm -3 inside a bulk, and a zone which does not include the center of nucleus formation having at least 1 μm on a wafer surface side, and further COPs density of lower than 10,000 cm -3 down to a depth equivalent to at least 50% of the thickness of the wafer. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供不具有现有技术缺陷的硅晶片的热处理方法，经济地进行，并且进一步不仅仅在靠近其表面的区域中仅含有COP，而且也不包含在晶片厚度的主要部分上的COP，并且还提供通过该方法获得的硅晶片。解决方案：进行制造方法，使得硅晶片至少暂时暴露于含氧气氛，然后在选择为满足权利要求书中要求保护的不等式（1）的温度下进行热处理，硅晶片具有用于在体内分离至少10 7 cm -3 的氧核形成中心的密度，并且不包括在晶片表面侧具有至少1μm的核形成中心，以及低于10,000cm -3 的至少相当于晶片厚度的50％的深度的COP密度。版权所有（C）2004，JPO

97. 发明专利

JP3453436B2 Apparatus for melting recrystallized semiconductor layer 失效
公开(公告)号：JP3453436B2
公开(公告)日：2003-10-06
申请号：JP21456794
申请日：1994-09-08
申请人：三菱電機株式会社
发明人：隆元田 , 加藤　　学
IPC分类号： H01L21/20 , C30B13/16 , C30B13/22 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： C30B13/16 , C30B13/22 , Y10S117/904 , Y10T117/1076 , Y10T117/1088

98. 发明专利

JP2003051504A METHOD OF MANUFACTURING SILICON WAFER INCLUDING Ar/NH3 RAPID THERMAL ANNEALING PROCESS, SILICON WAFER MANUFACTURED THEREBY, CZOCHRALSKI PULLER FOR MANUFACTURING MONOCRYSTALLINE SILICON INGOT 审中-公开
标题翻译：制造含有Ar / NH3快速热退火工艺的硅膜的方法，制造的硅膜，用于制造单晶硅硅酸盐的CZOCHRALSKI PULLER
公开(公告)号：JP2003051504A
公开(公告)日：2003-02-21
申请号：JP2002136234
申请日：2002-05-10
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： PARK JAE-GUN
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B33/00 , H01L21/20 , H01L21/26 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/12458 , Y10T428/12528 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer having controlled defect distribution. SOLUTION: DZs having a sufficient depth inward from the surface of a wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates which act as the intrinsic gettering sites have vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes a first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, DZs between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks which corresponds to a bulk region of the wafer. For such as oxygen precipitate concentration profile, the wafer is exposed to rapid heat annealing in a gas mixture atmosphere comprising NH3 and Ar at about 1200 deg.C or below.
摘要翻译：要解决的问题：提供具有受控缺陷分布的硅晶片。解决方案：具有从晶片表面向内的足够深度的DZ在晶片的主体区域中具有高吸气效应。在硅晶片中，作为固有吸气部位的氧沉淀物具有垂直分布。从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的DZ，第一和第二峰以及第一和第二峰之间的对应于晶片的体区的凹区。对于例如氧沉淀物浓度分布，将晶片暴露于包含NH 3和Ar的气体混合物气氛中在约1200℃或更低的温度下进行快速热退火。

99. 发明专利

JPS6124791B2 JPS6124791B2 - 失效
公开(公告)号：JPS6124791B2
公开(公告)日：1986-06-12
申请号：JP15978978
申请日：1978-12-21
申请人： Motorola Inc
发明人： NOERU DE REON
IPC分类号： H05B6/32 , H05B6/36
CPC分类号： H05B6/362 , Y10T117/1088

100. 发明专利

JPS5939797A Production device for gaas single crystal 失效
标题翻译： GAAS单晶生产设备
公开(公告)号：JPS5939797A
公开(公告)日：1984-03-05
申请号：JP14974782
申请日：1982-08-27
申请人： Semiconductor Res Found
发明人： NISHIZAWA JIYUNICHI
IPC分类号： C25D11/04 , C30B13/00 , C30B13/08 , C30B13/20 , C30B29/42 , H01L21/18
CPC分类号： C30B13/20 , C30B13/00 , C30B13/08 , C30B29/42 , Y10T117/1008 , Y10T117/1088
摘要： PURPOSE:To provide a production device for a single crystal by a floating zone melting method which can form a GaAs single crystal of a large diameter having high purity, by providing an As-containing vessel controlled to a specific temp. in a vessel contg. a polycrystal of GaAs and a single crystal. CONSTITUTION:The GaAs polycrystal 6 in a quartz cylinder 1 is subjected to high-frequency induction heating to about 1,240 deg.C with a soaking coil 20 to make a melt part 5, and a seed crystal 3 is seeded therein. After necking, rotary support bars 10, 8 are moved downward to grow a single crystal 4. Then the temp. of the As 13 in an As-containing vessel 11 connected with a fine quartz tube 12 to the cylinder 1 in the above-mentioned method is controlled to the temp. at which the optimum pressure of arsenic satisfying the stoichiometric compsn. of the crystal is obtd. The above-mentioned temp. TA of the arsenic is determined as the value satisfying the equation [GGaAs is the temp. of the melt part 5; PGaAs is the vapor pressure of As in the melt part 5; PAs is the vapor pressure of As in the vessel 11 (determined clearly from the value of TAs)].
摘要翻译：目的：通过提供一种可以形成具有高纯度的大直径的GaAs单晶的浮区熔化方法，通过提供控制到特定温度的含As容器来提供单晶的生产装置。在船只 GaAs和单晶的多晶体。构成：将石英筒1中的GaAs多晶体6用浸渍线圈20进行约1240℃的高频感应加热，制成熔融部5，将晶种3接种于其中。收缩后，旋转支撑杆10,8向下移动以生长单晶4.然后，在与上述方法中的气缸1的细石英管12连接的含有As的容器11中的As 13的温度被控制为温度。其中砷的最佳压力满足理论配比。的水晶是有限的。上述温度砷的TA被确定为满足等式[GGaAs是温度]的值。的熔体部分5; PGaAs是熔体5中的As的蒸气压; PA是容器11中As的蒸汽压（从TAs的值确定）]。

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