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91. 发明专利

JPH09186550A CHIP MOUNT BASE, PACKAGE USING IT AND SURFACE ACOUSTIC WAVE FILTER 失效
公开(公告)号：JPH09186550A
公开(公告)日：1997-07-15
申请号：JP34168695
申请日：1995-12-27
申请人： SANYO ELECTRIC CO
发明人： UDA NAONORI , KOBAYASHI TAIZO , SAWAI TETSUO , HARADA YASOO
IPC分类号： H01L41/09 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a package in which an electric short-circuit is interrupted and noise invasion is prevented by providing individual grounding electrodes apart from each other to the mount base. SOLUTION: A mount substrate 1 is made of an insulation material and usually a package 2 of a SAW filter, various circuits and an IC or the like are mounted, and a common ground electrode 1a is provided to a lower side. The package 2 is made up of a package lower body 11 whose middle part is recessed as a hollow rectangular parallelepiped making of an insulation material such as ceramic, plastic, alumina or BT resin, and of a cover 19. Die pads 12b, 12c apart horizontally independently with a middle surface of a bottom wall 12 as a border are formed to a package lower part 11 by means of metallic plating. Furthermore, the chip 3 of the SAW filter is placed so as to be bridged over both the die pads 12b, 12c.

92. 发明专利

JPH08321704A VARIABLE ATTENUATOR 失效
公开(公告)号：JPH08321704A
公开(公告)日：1996-12-03
申请号：JP12464395
申请日：1995-05-24
申请人： SANYO ELECTRIC CO
发明人： BABA SEIICHI , SAWADA MINORU , HARADA YASOO
IPC分类号： H01P1/22 , H03H7/25 , H03H11/26 , H04L27/20 , H04L27/36
摘要： PURPOSE: To obtain the variable attenuator with high linearity, capable of broad band operation and ease of MMIC processing. CONSTITUTION: A reflection variable attenuator is made up of a directional coupler 1 consisting of microstrip conductors 1a, 1b and two variable impedance circuits 2, 3 each comprising a common gate FET. The variable impedance circuit 2 is connected to one end of the microstrip conductor 1a of the directional coupler 1 and the variable impedance circuit 3 is connected to the other end of the microstrip conductor 1b. An input terminal 11 receiving a high frequency input signal RFin is connected to one end of the microstrip conductor 1b and an output terminal O1 from which a high frequency output signal RFout is led out is connected to the other end of the microstrip conductor 1a. Through the constitution above, the linear gain and the frequency characteristic are enhanced.

93. 发明专利

JPH08316461A FIELD-EFFECT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08316461A
公开(公告)日：1996-11-29
申请号：JP12028095
申请日：1995-05-18
申请人： SANYO ELECTRIC CO
发明人： MATSUSHITA SHIGEHARU , INOUE DAIJIRO , MATSUMURA KOJI , SAWADA MINORU , HARADA YASOO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PURPOSE: To maintain the high speed property of carrier in a wide range of an electric field, and to improve high output characteristics by a method wherein the third semiconductor layer possesses the greatest carrier density and the electron mobility higher than that in the first semiconductor layer and lower than that in the second semiconductor layer, and an impurity-doped layer is contained therein. CONSTITUTION: Electrons of an impurity-doped layer 5 are mainly allowed to move in an InGaAs electron moving layer 3 by application of voltage to a source electrode 9 and a drain electrode 10. The mobility of electrons in InGaAs is higher than the mobility of electrons in AlGaAs and GaAs, and electrons are allowed to travel at high speed in the InGaAs electron transit layer 3 and a GaAs electron feeding layer 4. Accordingly, the electron mobility is increased on a wide range from a low electric field to a high electric field. Besides, the number of carrier travels in the InGaAs electron traveling layer 3 is increased by increasing the maximum carrier concentration of GaAs, and the current value in proportion to the product of electron speed and the number of electrons is made larger.

94. 发明专利

JPH08139108A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08139108A
公开(公告)日：1996-05-31
申请号：JP27782794
申请日：1994-11-11
申请人： SANYO ELECTRIC CO
发明人： MATSUSHITA SHIGEHARU , TERADA SATOSHI , FUJII SHIGEYOSHI , HARADA YASOO
IPC分类号： H01L29/43 , H01L21/28 , H01L21/338 , H01L29/812
摘要： PURPOSE: To obtain a semiconductor device in which a low resistance electrode can be formed without accompanying breakdown of insulation film or generation of pit in the underlying semiconductor. CONSTITUTION: A gate electrode 2 formed on a GaAs substrate 1 has laminate structure (a) comprising a first part 2a of a tungsten compound, a second part 2b of gold, and a third part 2c of tungsten or a compound thereof. The substrate 1 and the gate electrode 2 are coated (b) with an insulation film 3, impurity ions are implanted (c) using the gate electrode 2 as a mask, and a heavily doped layer 4 is formed by annealing (d) through self-aligned process.

95. 发明专利

JPH08139014A SWITCHING CIRCUIT DEVICE 失效
公开(公告)号：JPH08139014A
公开(公告)日：1996-05-31
申请号：JP27615294
申请日：1994-11-10
申请人： SANYO ELECTRIC CO
发明人： UDA NAONORI , SAWAI TETSUO , NISHIDA MASAO , HIRAI TOSHIKAZU , HARADA YASOO
IPC分类号： H01L27/06 , H01L21/06 , H01L21/8232 , H03K17/687 , H03K17/693
摘要： PURPOSE: To provide a switching circuit device wherein insertion loss is reduced without enlarging the circuit area. CONSTITUTION: In a switching circuit device formed constituted of FET's 1-10 on a GaAs substrate 100, the GaAs substrate 100 is made thicker than or equal to 300μm, preferably thicker than or equal to 400μm, e.g. 450μm. Thereby, insertion loss is reduced, and linearity of input and output power characteristics and distortion characteristics are improved.

96. 发明专利

JPH0846042A FORMATION OF VIAHOLE 失效
公开(公告)号：JPH0846042A
公开(公告)日：1996-02-16
申请号：JP18207894
申请日：1994-08-03
申请人： SANYO ELECTRIC CO
发明人： MURAI SHIGEYUKI , YAMAGUCHI TSUTOMU , HARADA YASOO
IPC分类号： H01L21/28 , H01L21/768
摘要： PURPOSE:To provide a method for forming a viahole in a semiconductor substrate accurately and readily without using a special equipment. CONSTITUTION:A first conductive film 2 formed in a surface of a GaAs substrate 1 is etched to a net shape and an etching hole 6 is formed in a lower part thereof. The GaAs substrate 1 is put in plating liquid and plating metal 7 is formed in the net-shape first conductive film 2. A viahole is formed by etching the GaAs substrate 1 from a rear side of the GaAs substrate 1 until a bottom part of the etching hole 6 is opened. Thereafter, a second conductive film is formed in an entire of a rear of the GaAs substrate 1 and an inner side of a viahole.

97. 发明专利

JPH0845929A WIRING FORMING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0845929A
公开(公告)日：1996-02-16
申请号：JP18337694
申请日：1994-08-04
申请人： SANYO ELECTRIC CO
发明人： NOGAWA KAORU , NISHIKAWA MADOKA , YAMADA SETSU , HARADA YASOO
IPC分类号： H01L21/3205 , H01L23/52
摘要： PURPOSE:To provide a method of forming a wiring, wherein a wiring layer can be enhanced in thickness without causing an underplated part. CONSTITUTION:Negative-type resist 3 for electron beam lithography is applied onto a board l where a wiring layer 2 is formed, and a conductive layer 4 is formed on the negative-type resist 3. A prescribed pattern is drawn on the negative-type resist 3 through the conductive layer 4 by an electron beam lithography. An empty space 8a is formed between the conductive layer 4 and the wiring layer 2 by developing the negative-type resist 3, a path 8b extending from the edge of a wafer to the space 8a is provided, and then plating solution is poured into the path 8b to plate a conductive layer 10, whereby a plating gold is formed between the conductive layer 10 and the wiring layer 2.

98. 发明专利

JPH06333956A FIELD EFFECT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06333956A
公开(公告)日：1994-12-02
申请号：JP15056093
申请日：1993-06-22
申请人： SANYO ELECTRIC CO
发明人： SAWADA MINORU , HARADA YASOO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/10 , H01L29/772 , H01L29/778
摘要： PURPOSE:To provide a new type field effect transistor having an extremely low noise characteristic and high output characteristic. CONSTITUTION:An undoped GaAs layer 2, undoped Inlays layer 11, undoped InxGa1-xAs layer 12 in which the In content gradually decreases toward an electrode side from a substrate 1 side, and n-type GaAs layer 13, and n-type AlGaAs layer 5 are successively formed on a GaAs substrate 1. When the gate potential is deep, electrons run in the layers 11 and 12, resulting in an extremely low noise characteristic, When the gate potential is shallow, the electrons run mainly through the layer 13, resulting in a high-output characteristic.

99. 发明专利

JPH06311007A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPH06311007A
公开(公告)日：1994-11-04
申请号：JP9303393
申请日：1993-04-20
申请人： SANYO ELECTRIC CO
发明人： UDA NAONORI , SAWAI TETSUO , HIRAI TOSHIKAZU , HARADA YASOO
IPC分类号： H03K17/693
摘要： PURPOSE:To improve the insertion loss characteristic of a high frequency signal by providing a 2nd FET between a gate of a FET receiving/interrupting the high frequency signal and a ground potential and controlling an ON-resistance of the 2nd FET to control the attenuation of the signal passing through the FET thereby reducing a length of a transmission path through which the high frequency signal leaks. CONSTITUTION:With a voltage of 0V given to a gate voltage terminal 13 and a voltage of 3V given to a gate voltage terminal 14, a FET 10A is turned off and a FET 10B is turned on. Thus, a high frequency signal RF is not outputted to an output terminal 11 but outputted to an output terminal 12 through the FET 10B and given to a circuit of other system (not shown). When a voltage at a gate voltage terminal 15 gets higher, an ON resistance of a FET 10C is decreased and a gate voltage applied to the FET 10B is decreased. Thus, the ON resistance of the FET 10B is increased, the signal RF passing through the FET 10B is attenuated and a signal level at the output terminal 12 is decreased. Thus, no attenuator is required and the leaked signal is reduced.

100. 发明专利

JPH06310953A MATCHING CIRCUIT 失效
公开(公告)号：JPH06310953A
公开(公告)日：1994-11-04
申请号：JP9303993
申请日：1993-04-20
申请人： SANYO ELECTRIC CO
发明人： MURAI SHIGEYUKI , YAMAGUCHI TSUTOMU , NAKATANI MASAAKI , HARADA YASOO
IPC分类号： H03F3/60
摘要： PURPOSE:To prevent the distortion in an output waveform and the reduction in a linear output even when a voltage applied to a drain electrode of a field effect transistor(TR) is changed. CONSTITUTION:The circuit is made up of an inductor L2 and capacitors C1, C2 giving a load impedance to a FET. In this matching circuit, a cathode electrode of the capacitor C1 is made up of a varactor diode whose cathode electrode connects to other terminal of the inductor whose one terminal connects to a drain electrode of the FET and whose anode electrode connects to ground.

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