专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明专利

JPS6188437A Liquid metal ion source 失效
标题翻译：液体金属离子源
公开(公告)号：JPS6188437A
公开(公告)日：1986-05-06
申请号：JP20972184
申请日：1984-10-08
申请人： Hitachi Ltd
发明人： KAWANAMI YOSHIMI , ISHITANI TORU , UMEMURA KAORU , TAMURA HIFUMI
IPC分类号： H01J27/26 , H01J37/08 , H01J37/26
CPC分类号： H01J37/08 , H01J27/26
摘要： PURPOSE:To make the axis of the ion beam coincide with the central axis of the ion-leading-out hole so as to stabilize ionic currents passing through the detection holes of an ion-leading-out electrode by minutely moving a needle electrode according to the result of detection of the ionic currents. CONSTITUTION:A lead-out electrode 4 is used to lead out ions of a substance 2 to be ionized from the pointed end of a needle electrode 1 in a liquid metal ion source. The electrode 4 has an ion-leading-out hole 5 and four symmetrical detection holes 12 equally distant from the hole 5. Probes 13, 13, 14 and 14' for catching ions passing through the detection holes 12 are installed on the lower surface of the electrode 4. Differences in ionic currents flowing in the probes 13, 13, 14 and 14' are detected and the detected differences are fed to a shift detector 18 to drive a fine adjustment 17 thereby minutely moving the needle electrode 1 in such a manner as to make the axis of an ion beam 6 coincide with the center of the ion-leading-out hole 5. Accordingly, it is possible to automatically stabilize the current of the ion beam 6 passing through the electrode 4.
摘要翻译：目的：使离子束的轴线与离子引出孔的中心轴一致，通过微细移动针状电极来稳定通过离子引出电极的检测孔的离子电流检测离子电流的结果。结构：引出电极4用于引出液体金属离子源中的从针状电极1的尖端离子化的物质2的离子。电极4具有离开孔5的离子引出孔5和四个对称的检测孔12.用于捕获穿过检测孔12的离子的探针13,13,14和14'安装在电极4.检测在探针13,13,14和14'中流动的离子电流的差异，并且将检测到的差异馈送到移位检测器18以驱动微调17，从而以这种方式微小地移动针电极1 为了使离子束6的轴线与离子引出孔5的中心一致。因此，能够自动稳定通过电极4的离子束6的电流。

92. 发明专利

JPS6134833A Liquid metal ion source 失效
标题翻译：液体金属离子源
公开(公告)号：JPS6134833A
公开(公告)日：1986-02-19
申请号：JP15523884
申请日：1984-07-27
申请人： Hitachi Ltd
发明人： ISHITANI TORU , UMEMURA KAORU , KAWANAMI YOSHIMI
IPC分类号： H01J37/08 , H01J27/26
CPC分类号： H01J27/26
摘要： PURPOSE:To prevent an ionization material from contamination due to sputtering particles coming from a drawing-out electrode by constituting the part, subjected to ion impact, of the drawing-out electrode with one of the constituent elements of the ionization material. CONSTITUTION:When ionization material Cu 3 is heated in a store part 2 up to about 1,100 deg.C for being melted while adding about +8kV to a drawing electrode 4, Cu ion starts to be emitted from the tip of a needle-shaped electrode 1 while obtaining an ion current of 100muA at about 8.5kV. In the electrode 4, the central part 6 including the part to be subjected to the ion impact is made of Cu, while the peripheral part thereof being made of stainless steel. Sputtering particles 5 from the electrode 2 are Cu so that they generate no contamination even when they stick to the ionization material Cu 3. According to said constitution, the life of an ion source device is extended thus improving reliability.
摘要翻译：目的：为了防止离子化材料因电离材料的构成元素之一构成引出电极的离子冲击的部分而从引出电极引起的溅射粒子的污染。构成：当电离材料Cu 3在储存部分2中加热至约1100℃以便熔融，同时向牵引电极4加入大约+ 8kV时，Cu离子开始从针状电极的尖端发射 1，同时在约8.5kV时获得100muA的离子电流。在电极4中，包括要进行离子冲击的部分的中心部分6由Cu制成，而其周边部分由不锈钢制成。来自电极2的溅射颗粒5是Cu，因此即使当它们粘附到电离材料Cu 3时也不产生污染。根据所述结构，离子源装置的寿命延长，从而提高了可靠性。

93. 发明专利

JP2002075262A IMAGE PROCESSING APPLICATION DEVICE 失效
公开(公告)号：JP2002075262A
公开(公告)日：2002-03-15
申请号：JP2000257285
申请日：2000-08-28
申请人： HITACHI LTD
发明人： KABASAWA TAKANORI , MADOKORO YUICHI , MUTO HIROYUKI , ISHITANI TORU
IPC分类号： G01N23/225 , G01N1/28 , G01N1/32 , G02B21/36 , H01J37/21
摘要： PROBLEM TO BE SOLVED: To provide a device which can automatically make a focus correction at a minimum number of image-taking times. SOLUTION: Focus parameter dependence of amount of deterioration of image is kept memorized by the device. First, a standard image signal of a sample is obtained at a just-focus state, by which, together with the parameter dependence of the amount of deterioration, parameter dependence characteristics of a correlative length is calculated and memorized. Two candidate values of deviation amount of the parameter are estimated from the correlative length obtained from the deteriorated image signal and the parameter dependence of the correlative length, from which, parameters are changed according to the estimated values to complete focus corrections.

94. 发明专利

JP2000021347A FOCUSING ION BEAM WORKING METHOD AND WORKING DEVICE 失效
公开(公告)号：JP2000021347A
公开(公告)日：2000-01-21
申请号：JP18896998
申请日：1998-07-03
申请人： HITACHI LTD
发明人： ISHITANI TORU , ONISHI TAKESHI , KAWAKAMI MEGUMI , IWATA KOJI
IPC分类号： B23K15/00 , G01N23/04 , G01Q60/00 , G01Q90/00 , H01J37/30 , H01J37/304 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To compensate for positional dislocation of highly accurate working even if a setting mark is damaged by acquiring a scanning ion microscope SIM image of a sample with every prescribed time, and correcting an irradiating position of a focusing ion beam by calculating a displacement quantity of the image on the basis of image data acquired just before it. SOLUTION: In the (n)th working position correcting processing, an image acquiring means 32 of the image control part 9 acquires an SIM image in the vicinity of a mark according to a timing signal from an image acquiring timing control means 31 to be stored in an image memory 33 as a present image A33. At the same time, a reference image renewing means 34 takes in a detecting mark image D[n-1] the last time from a detecting mark image recording means 37 to renew a reference image B35 of the memory to a D[n-1] mark image. Next, the images A, B are compared by the matching processing part to calculate a positional dislocation quantity of a mark of the image A, and the working position correcting part 11 performs working by using a beam irradiating position correction quantity calculated on the basis of this.

95. 发明专利

JPH11259811A MAGNETIC HEAD AND ITS PRODUCTION 失效
公开(公告)号：JPH11259811A
公开(公告)日：1999-09-24
申请号：JP1520899
申请日：1999-01-25
申请人： HITACHI LTD
发明人： TAKANO KOJI , KOYAMA NAOKI , TANABE HIDEO , MORIWAKI HIDETOSHI , YUHITO ISAMU , SHIIKI KAZUO , ONISHI TAKESHI , ISHITANI TORU , KOBAYASHI TOSHIO , TODOKORO HIDEO
IPC分类号： G11B5/31 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To obtain a separated recording-reproducing magnetic head with a simple structure in which noise characteristics due to adjacent tracks can be improved, by forming grooves by focused ion beam etching on the surface of a recording head facing a magnetic disk so that the grooves regulate the track width of the upper and lower magnetic poles of the recording head. SOLUTION: The magnetic pole part of an induction thin film head of a separated recording-reproducing magnetic head is processed from the sliding surface side by a focused ion beam (FIB) 100. The magnetic pole part consists of a slider 101, magnetic poles 102, protective layer 103 and gap layer 104. The magnetic poles 102 consist of a permalloy having 1 T saturation magnetic flux density, and are formed into 1.5 μm thick in the upper part and 1.0 μm thick in the lower part. The FIB 100 is produced from GaIn as the ion source, accelerated at 30 kV and controlled to give 0.2 μm beam spot diameter with 1.6 nA beam current. The track width of the magnetic head before processed is 10 μm, and the track is processed with the FIB 100, for example, into 1 μm track width both in the upper and lower part, and 2 μm depth.

96. 发明专利

JPH10283971A METHOD AND DEVICE FOR FOCUSED ION BEAM MACHINING 失效
公开(公告)号：JPH10283971A
公开(公告)日：1998-10-23
申请号：JP8920197
申请日：1997-04-08
申请人： HITACHI LTD
发明人： SASAKI MASAJI , ISHITANI TORU
IPC分类号： H01J37/141 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To perform high-speed machining while controlling the thickness of a flaw caused by the application of an FIB(focused ion beam). SOLUTION: FIB machining is separated into two processes, i.e., a process up to the setting of a machining area and a machining process, and lens conditions at accelerating voltages V1, V2 for the processes are registered. During setting of the machining area, the lens condition at the accelerating voltage V1 is automatically read for lens control, and an area 33 is scanned with a formed FIB 31 to form an SIM image. During machining, an FIB 32 is formed under the lens condition at the accelerating voltage V2 to machine an area 34.

97. 发明专利

JPH10199466A ION BEAM WORKING OBSERVATION DEVICE 失效
公开(公告)号：JPH10199466A
公开(公告)日：1998-07-31
申请号：JP360097
申请日：1997-01-13
申请人： HITACHI LTD
发明人： HIROSE HIROSHI , KOIKE HIDEKI , ARIMA YOSHIO , ISHITANI TORU
IPC分类号： H01J37/20 , H01J37/26 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To enhance working efficiency and ensure safety without replacing a sample finely moving device by arranging a corresponding stage coaxially as an ion beam axis, and arranging a side entry stage on the upper side, a eucentric stage for wafer on the lower side, and a replacing focusing lens between both stages. SOLUTION: Gallium ions outgoing from an ion source 1 are accelerated with a drawing electrode 3, and focused on a sample 12 with a focusing lens 4 and an objective lens 7. Beam current is limited with a beam limiting device 5, scanned with the voltage of a scanning electrode 6 to conduct working and SIM image observation. When a large sample such as wafer is worked and observed, a holder 18 is drawn out, action of the objective lens 7 is stopped, an objective lens 2 is operated, operation of a detector 9 is stopped, a detector 14 is operated, and working observation similar to a usual focusing ion beam device is conducted. TEM sample working and large sample working are conducted without replacing a sample stage.

98. 发明专利

JPH09306402A ION BEAM LIMITING SQUEEZING PLATE, MASK, FOCUSED ION BEAM DEVICE AND PROJECTION ION BEAM DEVICE 失效
公开(公告)号：JPH09306402A
公开(公告)日：1997-11-28
申请号：JP11875996
申请日：1996-05-14
申请人： HITACHI LTD
发明人： ISHITANI TORU , UMEMURA KAORU , KOIKE HIDEMI
IPC分类号： H01J37/09 , H01J37/252
摘要： PROBLEM TO BE SOLVED: To thin a squeezing hole part and an opening pattern part in order to enhance an ion beam scattering preventing effect in an opening side wall of the opening pattern of a mask and a squeezing hole side wall and lengthen their lives. SOLUTION: In a surface of the periphery of squeezing holes 201, 202 limiting strength of an ion beam, in a non-irradiation squeezing substrate 102a, a droplet 203 of gallium (Ga: melting point is approximately 30 deg.C) which is a molten metal element, is made to adhere by a large amount. When irradiation of an ion beam 204 is performed, by ion beam irradiation, Ga is diffused only in an ion beam irradiation region, here is covered by a thin Ga liquid-state thin film 203a. When ion beam irradiation is performed in also the squeezing hole 202, is peripheral surface is also covered by the liquid-state thin film 203a. Accordingly, even when this liquid-state thin film is thinned by spattering by the incident beam 204, an inflow is soon generated from the Ga drip in the periphery, self restoration is performed.

99. 发明专利

JPH0935673A FOCUSING ION BEAM DEVICE 失效
公开(公告)号：JPH0935673A
公开(公告)日：1997-02-07
申请号：JP18411995
申请日：1995-07-20
申请人： HITACHI LTD
发明人： IWAMOTO HIROSHI , ISHITANI TORU
IPC分类号： H01J37/00
摘要： PROBLEM TO BE SOLVED: To provide a focusing ion beam device suitable to reduce troublesome operation by an operator and to shorten time in machining a sample with step difference. SOLUTION: A sample 9 is scanned with an ion beam 8, and the image of the sample is displayed on a display device 16 based on a secondary electron detecting signal detected with a detector 7. When the step difference exists on the sample surface, focusing is conducted on each surface, an image signal of each surface, focusing condition set when the image is obtained, and magnification of observation are memorized in a computer 17. Shape to be machined is set by superimposing on the regenerated image of each surface, then machining of the shape set on each surface is jointly conducted.

100. 发明专利

JPH08264150A FOCUSED ION BEAM APPARATUS AND FOCUSED ION BEAM IRRADIATING METHOD 失效
公开(公告)号：JPH08264150A
公开(公告)日：1996-10-11
申请号：JP6551195
申请日：1995-03-24
申请人： HITACHI LTD
发明人： ISHITANI TORU , ONISHI TAKESHI
IPC分类号： H01J37/08 , G01Q10/00 , H01J37/09 , H01J37/147 , H01J37/26 , H01J37/30
摘要： PURPOSE: To analyze defects of a fine semiconductor by providing specified values of necessary optical data of a focused ion beam apparatus (FIB). CONSTITUTION: An optical system of which the whole optical length from a tip end of an ion emitter, which is a liquid metal ion source 1 of Ga, to the surface of a specimen 10 is set to be 300-450mm, the distance from the ion source 1 to the center of a focusing lens 2 is set to be 14-45mm, and moreover the distance from the center of an objective lens 8 to the specimen 10 is set to be 10-40mm is mounted on a Ga-based FIB. Consequently, in a processing mode at the maximum current density Jmax >=15A/cm , the ion beam diameter Dp satisfies Dp =several pA and semiconductor analysis for 64 mega-bit DRM and 256 mega- bit DRA can be carried out.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式