专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013021240A Diode and semiconductor device 有权
标题翻译：二极管和半导体器件
公开(公告)号：JP2013021240A
公开(公告)日：2013-01-31
申请号：JP2011155217
申请日：2011-07-13
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MACHIDA SATORU , YAMASHITA YUUSUKE , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/329 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of suppressing loss during switching of a diode.SOLUTION: The diode comprises: a cathode electrode; a cathode region having a first conductivity type semiconductor; a drift region having a low concentration first conductivity type semiconductor; an anode region having a second conductivity type semiconductor; and an anode electrode. The diode comprises: a barrier region formed between the drift region and the anode region and having the first conductivity type semiconductor having a concentration being higher than that of the drift region; a contact region formed so as to contact with the anode electrode and having the first conductivity type semiconductor; and a control electrode facing the anode region between the contact region and the barrier region across an insulating film. When the voltage is applied to the control electrode in the diode, a first conductivity type channel is formed in the anode region between the contact region and the barrier region.
摘要翻译：要解决的问题：提供一种能够抑制二极管切换期间的损耗的技术。解决方案：二极管包括：阴极电极; 具有第一导电类型半导体的阴极区; 具有低浓度第一导电类型半导体的漂移区; 具有第二导电类型半导体的阳极区域; 和阳极电极。二极管包括：形成在漂移区和阳极区之间并具有比漂移区的浓度高的第一导电型半导体的势垒区; 形成为与所述阳极电极接触并具有所述第一导电型半导体的接触区域; 以及跨越绝缘膜的面对接触区域和阻挡区域之间的阳极区域的控制电极。当电压施加到二极管中的控制电极时，在接触区域和屏障区域之间的阳极区域中形成第一导电型沟道。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013021142A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013021142A
公开(公告)日：2013-01-31
申请号：JP2011153491
申请日：2011-07-12
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , MACHIDA SATORU , SAITO JUN
IPC分类号： H01L29/861 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To improve recovery characteristics of a semiconductor device having a diode.SOLUTION: A semiconductor substrate 10 of a semiconductor device 1 includes a p-type anode region 8 contacting an anode electrode E1, and an n-type region 9 contacting the anode electrode E1. The anode region 8 includes a high concentration anode partial region 7 having a high impurity concentration, a low concentration anode partial region 6 having a low impurity concentration, and a medium concentration anode partial region 5 having a medium impurity concentration. The high concentration anode partial region 7, the low concentration anode partial region 6, and the medium concentration anode partial region 5 are arranged in this order when observed in a direction from the anode electrode El toward a cathode electrode E2. The low concentration anode partial region 6 and the n-type region 9 contact each other.
摘要翻译：解决的问题：提高具有二极管的半导体器件的恢复特性。解决方案：半导体器件1的半导体衬底10包括与阳极电极E1接触的p型阳极区域8和与阳极电极E1接触的n型区域9。阳极区域8包括具有高杂质浓度的高浓度阳极部分区域7，具有低杂质浓度的低浓度阳极部分区域6和具有中等杂质浓度的中等浓度阳极部分区域5。当从阳极电极E1朝向阴极电极E2的方向观察时，高浓度阳极部分区域7，低浓度阳极部分区域6和中等浓度阳极部分区域5按此顺序排列。低浓度阳极部分区域6和n型区域9彼此接触。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013051345A Diode, semiconductor device and mosfet 审中-公开
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013051345A
公开(公告)日：2013-03-14
申请号：JP2011189263
申请日：2011-08-31
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , MACHIDA SATORU , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To disclose a technology of enabling reduction of a switching loss in a diode to be achieved by a structure that is not likely to cause variation in quality at the time of manufacturing.SOLUTION: A diode disclosed in the present specification comprises: a cathode electrode; a cathode region composed of a first conductivity type semiconductor; a drift region composed of a low-concentration first conductivity type semiconductor; an anode region composed of a second conductivity type semiconductor; and an anode electrode. The diode comprises: a barrier region formed between the drift region and the anode region, and composed of a first conductivity type semiconductor having a concentration higher than that of the drift region; and a hetero semiconductor region formed so as to electrically connect the barrier region and the anode electrode, and composed of a semiconductor having a band gap smaller than that of the barrier region. In the diode, the hetero semiconductor region and the barrier region form a hetero junction.
摘要翻译：要解决的问题：公开一种能够通过不可能在制造时质量变化的结构来实现二极管的开关损耗降低的技术。解决方案：本说明书中公开的二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度第一导电型半导体构成的漂移区域; 由第二导电型半导体构成的阳极区域; 和阳极电极。二极管包括：在漂移区和阳极区之间形成的阻挡区，由比漂移区的浓度高的第一导电型半导体构成; 以及异质半导体区域，其形成为电连接所述阻挡区域和所述阳极电极，并且由具有比所述阻挡区域的带隙小的带隙的半导体构成。在二极管中，异质半导体区域和势垒区域形成异质结。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2010092991A Diode 审中-公开
标题翻译：二极管
公开(公告)号：JP2010092991A
公开(公告)日：2010-04-22
申请号：JP2008259994
申请日：2008-10-06
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUGIYAMA TAKAHIDE , YAMASHITA YUUSUKE , MISUMI TADASHI
IPC分类号： H01L29/861 , H01L21/322 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To provide a technique for suppressing oscillation of a current or a voltage between an anode and a cathode by suppressing generation of a surge between the anode and the cathode while reducing electric power loss during reverse recovery. SOLUTION: A diode 1 includes a cathode region 20 containing an n-type impurity in high concentration, a high-resistance region 40 containing an n-type impurity in low concentration and constantly along the thickness, and an anode region 50 containing a p-type impurity. The high resistance region 40 includes a first crystal defect region D1 having a peak of a defect amount nearby an interface S1 of the anode region 50 and a second crystal defect region D2 having a peak of a defect amount nearby a thickness-directional intermediate position M. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制反向恢复期间的电力损失，通过抑制阳极和阴极之间的浪涌的产生来提供抑制阳极和阴极之间的电流或电压的振荡的技术。解决方案：二极管1包括含有高浓度的n型杂质的阴极区域20，含有低浓度且不断沿着厚度的n型杂质的高电阻区域40和含有 p型杂质。高电阻区域40包括在阳极区域50的界面S1附近具有缺陷量的峰值的第一晶体缺陷区域D1和具有厚度方向中间位置M附近的缺陷量峰值的第二晶体缺陷区域D2 。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2013051346A Diode, semiconductor device and mosfet 有权
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013051346A
公开(公告)日：2013-03-14
申请号：JP2011189264
申请日：2011-08-31
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MACHIDA SATORU , YAMASHITA YUUSUKE , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To disclose a technology of enabling reduction of a switching loss in a diode to be achieved by a structure that is not likely to be subject to influence of temperature rise of a semiconductor substrate due to heat generation.SOLUTION: A diode disclosed in the present specification comprises: a cathode electrode; a cathode region composed of a first conductivity type semiconductor; a drift region composed of a low-concentration first conductivity type semiconductor; an anode region composed of a second conductivity type semiconductor; and an anode electrode. The diode comprises a barrier region formed between the drift region and the anode region, and composed of a first conductivity type semiconductor having a concentration higher than that of the drift region. In the diode, the barrier region is electrically connected with the anode electrode via an external rectifier. In the diode, a forward voltage drop of the rectifier is smaller than a built-in voltage of a pn junction between the anode region and the barrier region.
摘要翻译：要解决的问题：公开一种能够通过不容易受到由于发热引起的半导体衬底的温度升高的影响而实现的二极管的开关损耗的降低的技术。解决方案：本说明书中公开的二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度第一导电型半导体构成的漂移区域; 由第二导电型半导体构成的阳极区域; 和阳极电极。该二极管包括在漂移区和阳极区之间形成的阻挡区，并由具有高于漂移区的浓度的第一导电型半导体构成。在二极管中，阻挡区域通过外部整流器与阳极电连接。在二极管中，整流器的正向压降小于阳极区域和阻挡区域之间的pn结的内置电压。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013048230A Diode, semiconductor device, and mosfet 有权
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013048230A
公开(公告)日：2013-03-07
申请号：JP2012166576
申请日：2012-07-27
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , MACHIDA SATORU , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/47 , H01L29/739 , H01L29/78 , H01L29/868 , H01L29/872
CPC分类号： H01L29/7397 , H01L27/0629 , H01L29/0619 , H01L29/0623 , H01L29/0642 , H01L29/0692 , H01L29/0696 , H01L29/08 , H01L29/0834 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/407 , H01L29/41766 , H01L29/7393 , H01L29/7806 , H01L29/7813 , H01L29/7839 , H01L29/8611 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To disclose a technique for enabling a reduction in loss at the time of switching in a diode.SOLUTION: A diode includes: a cathode electrode; a cathode region composed of a first-conductivity-type semiconductor; a drift region composed of the first-conductivity-type semiconductor with low concentration; an anode region composed of a second-conductivity-type semiconductor; an anode electrode composed of metal; a barrier region formed between the drift region and the anode region, and composed of the first-conductivity-type semiconductor with higher concentration than the drift region; and a pillar region formed so as to connect the barrier region and the anode electrode, and composed of the first-conductivity-type semiconductor with higher concentration than the barrier region. In the diode, the pillar region and the anode electrode are Schottky-coupled to each other.
摘要翻译：要解决的问题：公开一种能够在二极管切换时能够减少损耗的技术。解决方案：二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度的第一导电型半导体构成的漂移区域; 由第二导电型半导体构成的阳极区域; 由金属构成的阳极电极; 形成在所述漂移区域和所述阳极区域之间的阻挡区域，并且由比所述漂移区域高的浓度的所述第一导电型半导体构成; 以及柱状区域，其形成为将阻挡区域和阳极电极连接，并且由比所述阻挡区域高的浓度的第一导电型半导体构成。在二极管中，柱状区域和阳极电极彼此肖特基耦合。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013222798A Diode, semiconductor device and mosfet 有权
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：JP2013222798A
公开(公告)日：2013-10-28
申请号：JP2012092992
申请日：2012-04-16
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MACHIDA SATORU , YAMASHITA YUUSUKE , SUGIYAMA TAKAHIDE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/423 , H01L29/47 , H01L29/49 , H01L29/739 , H01L29/78 , H01L29/868 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide technology for raising proof pressure to reverse bias and reducing leak current in a diode in which a drift area is connected to an anode electrode via a Schott-key junction interface formed separately from an interface interposed between an anode area and the anode electrode.SOLUTION: A diode includes: a cathode electrode; a cathode area consisting of a first conductivity type semiconductor; a drift area consisting of a first conductivity type semiconductor with low concentration; an anode area consisting of a second conductivity type semiconductor; and an anode electrode. In the diode, the drift area is connected to the anode electrode via a Schott-key junction interface formed separately from an interface interposed between the anode area and the anode electrode. In the diode, the Schott-key junction interface projects more to the anode electrode side than the interface interposed between the anode area and the anode electrode.
摘要翻译：要解决的问题：提供用于提高反向偏压的抗压力的技术，并且通过与插入在阳极区域之间的界面分开形成的肖特基结结界面将漂移区域连接到阳极电极的二极管中的漏电流减小的技术和阳极电极。解决方案：二极管包括：阴极电极; 由第一导电型半导体构成的阴极区域; 由低浓度的第一导电型半导体组成的漂移区; 由第二导电型半导体构成的阳极区; 和阳极电极。在二极管中，漂移区域通过与介于阳极区域和阳极电极之间的界面分开形成的Schott-键结界面连接到阳极电极。在二极管中，Schott-key结界面比阳极区域和阳极电极之间的界面投射更多的阳极电极侧。

8. 发明专利

JP2013008779A diode 有权
标题翻译：二极管
公开(公告)号：JP2013008779A
公开(公告)日：2013-01-10
申请号：JP2011139301
申请日：2011-06-23
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , SAITO JUN
IPC分类号： H01L29/861 , H01L21/329 , H01L21/336 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To provide a diode with insulation trenches and barrier regions, capable of improving recovery characteristics.SOLUTION: The diode 10 includes: p-type anode regions 27; a plurality of insulation trenches 36 penetrating the anode regions 27; n-type barrier regions 26 positioned at a depth larger than the anode regions 27 and smaller than the insulation trenches 36; and p-type electric field relaxation regions 25 positioned at a depth larger than the barrier regions 26 and smaller than the insulation trenches 36.
摘要翻译：要解决的问题：为了提供具有绝缘沟槽和阻挡区域的二极管，能够提高恢复特性。解决方案：二极管10包括：p型阳极区域27; 穿过阳极区域27的多个绝缘沟槽36; 位于大于阳极区域27并且小于绝缘沟槽36的深度的n型阻挡区域26; 和P型电场弛豫区域25，其位于比阻挡区域26大的深度并且小于绝缘沟槽36.权利要求：（C）2013，JPO＆INPIT

9. 发明专利

JP2013008778A diode 有权
标题翻译：二极管
公开(公告)号：JP2013008778A
公开(公告)日：2013-01-10
申请号：JP2011139290
申请日：2011-06-23
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUUSUKE , MACHIDA SATORU , SAITO JUN
IPC分类号： H01L29/861 , H01L21/329 , H01L21/336 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To provide a diode with insulation trenches and barrier regions, capable of achieving a technology of suppressing variations in characteristics of each element.SOLUTION: A vertical diode 10 includes: p-type anode regions 28; a plurality of insulation trenches 36 penetrating the anode regions 28; and n-type barrier regions 26 with peak concentration at a depth larger than the anode regions 28 and smaller than the insulation trenches 36. The barrier regions 26 and the anode regions 28 are distant from each other.

10. 发明专利

JP2010258121A Pin diode and method for manufacturing the same 审中-公开
标题翻译： PIN二极管及其制造方法
公开(公告)号：JP2010258121A
公开(公告)日：2010-11-11
申请号：JP2009104684
申请日：2009-04-23
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YAMASHITA YUUSUKE , SUGIYAMA TAKAHIDE , MISUMI TADASHI
IPC分类号： H01L21/329 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a PIN diode providing the desired thermal characteristics of a forward direction voltage.
SOLUTION: A PIN diode 100 is provided with a high-resistance region 12 between a cathode region 14 and an anode region 4. Ions are irradiated to the high-resistance region 12 to form a crystal defect for making the thermal characteristic of forward direction voltage positive. Electron beam is further irradiated to the high-resistance region 12 to form a crystal defect for making the thermal characteristic of forward direction voltage negative.
COPYRIGHT: (C)2011,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式