会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Method for producing silicon carbide single crystal
    • 生产碳化硅单晶的方法
    • JP2008169111A
    • 2008-07-24
    • JP2008015928
    • 2008-01-28
    • Showa Denko Kk昭和電工株式会社
    • YAMAMOTO ISAMUKOMAKI KUNIOYANO KOTAROKOYANAGI NAOKINISHINO SHIGEHIRO
    • C30B29/36C30B23/06
    • PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal which is reduced in the content of inclusions, impurity elements and crystal defects, by using a sublimation-recrystallization method of silicon carbide.
      SOLUTION: The method for producing the silicon carbide single crystal 5 on a silicon carbide substrate 2 uses a graphite crucible 1 having an inner surface covered with tantalum carbide as a crucible 1 for storing a raw material 3 for silicon carbide in order to eliminate the deviation and a variation factor of a sublimed composition of the raw material 3, and the influence on the single crystal 5 caused by the factors. On inner surface of the graphite crucible 1 having the inner surface covered with tantalum carbide, tantalum is deposited in layers utilizing an electron beam heating vapor depositing method, and then a carbide inner surface layer is formed by a carbonization method.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种通过使用碳化硅的升华 - 再结晶法来降低夹杂物含量,杂质元素和晶体缺陷的碳化硅单晶的制造方法。 解决方案:在碳化硅基板2上制造碳化硅单晶5的方法使用具有覆盖有碳化钽的内表面的石墨坩埚1作为用于储存碳化硅原料3的坩埚1,以便 消除原料3的升华组合物的偏差和变化因子,以及因素对单晶5的影响。 在内表面被碳化钽覆盖的石墨坩埚1的内表面上,利用电子束加热气相沉积法层叠钽,然后通过碳化法形成碳化物内表面层。 版权所有(C)2008,JPO&INPIT
    • 2. 发明专利
    • PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL
    • JPH11116398A
    • 1999-04-27
    • JP28222397
    • 1997-10-15
    • SHOWA DENKO KK
    • YAMAMOTO ISAMUKOMAKI KUNIOYANO KOTAROKOYANAGI NAOKINISHINO SHIGEHIRO
    • C30B29/36
    • PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal, by which the single crystal having little impurity element and crystal defect is produced by using a crucible having the inner face covered by a heat resistant metal carbide as the crucible for storing a raw material for the silicon carbide. SOLUTION: A metal carbide coating membrane having >=10 μm thickness is formed by loading a highly pure graphite powder in a metallic crucible 1 of Ta or the like, and heating the graphite powder in the atmosphere of an inert gas such as Ar gas or in vacuum by a high frequency heater or the like at about 2,300 deg.C for a prescribed time. A silicon carbide powder or a green compact 3 as the raw material is intermittently or successively supplied from a raw material powder-supplying pipe 4, and heated to 2,000-2,400 deg.C to degrade and sublime, and a growing single crystal 5 is epitaxially grown on a silicon carbide seed crystal 2 heated to 1,800-2,300 deg.C to provide the objective high quality single crystal in the method for producing the silicon carbide single crystal. The degrading temperature of the metal carbide is preferably >=1,900 deg.C, and the metal carbide is selected from TaC, ZrC, NbC, TiC, Nb2 C, WC, MoC, Mo2 C, Ta2 C, etc.
    • 6. 发明专利
    • SYNTHESIS OF DIAMOND IN VAPOR PHASE METHOD
    • JPH0483797A
    • 1992-03-17
    • JP19634590
    • 1990-07-26
    • SHOWA DENKO KK
    • KOMAKI KUNIOYAMAMOTO ISAMU
    • C30B29/04
    • PURPOSE:To further increase separating out speed of diamond and improve uniformity of quality by introducing an organic compound having a different composition from a burning flame-forming gas or a mixed gas of an organic compound and argon or hydrogen into inner flame part of a burning flame in a box body independently of a burning flame-forming gas. CONSTITUTION:A raw material compound for separating out diamond containing carbon or a mixed gas of said compound and oxygen is burned so as to generate incomplete burning region in a box atmosphere containing oxygen or not containing oxygen to synthesize diamond in a vapor phase method. In said method, the following means is adopted in this invention: namely, an organic compound containing carbon having a composition different from a raw material for burning (jetting hole: 3) or a mixed gas of said organic compound and argon or hydrogen is directly supplied (jetting hole: 2) to an inner flame part 6 to separate out granular or filmy diamond in the box body.
    • 10. 发明专利
    • PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL
    • JPH11199395A
    • 1999-07-27
    • JP501898
    • 1998-01-13
    • SHOWA DENKO KK
    • KOMAKI KUNIOYAMAMOTO ISAMUKOYANAGI NAOKI
    • C30B23/00C30B29/36
    • PROBLEM TO BE SOLVED: To perform the growth of a high-quality SiC single crystal having little crystal defects on a seed crystal substrate in high efficiency by heating a silicon raw material in a crucible coated with a metal, carbide, bringing the evaporated gas into contact with a heated carbon material and transferring the gas to the seed crystal substrate. SOLUTION: A grown SiC single crystal is produced by heating and evaporating a silicon raw material 2 in a crucible coated with a metal carbide (preferably Ta carbide) (the crucible 4 coated with Ta carbide), bringing the evaporated gas into contact with a heated carbon material. (e.g. an SiC-containing carbon material 3 composed of a powdery mixture of high-purity graphite fine powder and SiC and placed on a funnel-shaped perforated plate 6) placed between the silicon raw material 2 and the seed crystal SiC substrate 1 and/or constructed of a deposited layer of plural porous structures or plural carbon powder and transferring the gas to the seed crystal, SiC substrate 1. The pressure in the reaction system is preferably 0.01-1,000 Torr.