会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • Graphene transistor
    • 石墨晶体管
    • JP2011114299A
    • 2011-06-09
    • JP2009271742
    • 2009-11-30
    • National Institute For Materials Science独立行政法人物質・材料研究機構
    • WATANABE EIICHIROTSUTANI HIROKIKOIDE YASUO
    • H01L29/786H01L21/336H01L29/06
    • PROBLEM TO BE SOLVED: To provide a graphene transistor having large gate capacity that is not obtained before, and to provide a method of manufacturing the same. SOLUTION: The graphene transistor has an insulating film disposed between graphene and a low-resistance substrate, and is characterized in that the whole insulating film is formed of a homogeneous composition and has a relative permittivity of ≥4, a basic element of the insulating film and a basic element of the substrate are different, and the insulating film has a thickness such that an interference contrast in the visible light range with which the graphene can be observed through an optical microscope is provided. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供以前未获得的具有大栅极容量的石墨烯晶体管,并提供其制造方法。 解决方案:石墨烯晶体管具有设置在石墨烯和低电阻基板之间的绝缘膜,其特征在于,整个绝缘膜由均匀的组成形成,并且具有≥4的相对介电常数,基本元素 绝缘膜和基板的基本元件不同,并且绝缘膜具有使得通过光学显微镜观察石墨烯的可见光范围内的干涉对比度的厚度。 版权所有(C)2011,JPO&INPIT