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1. 发明专利

JP2011114299A Graphene transistor 有权
标题翻译：石墨晶体管
公开(公告)号：JP2011114299A
公开(公告)日：2011-06-09
申请号：JP2009271742
申请日：2009-11-30
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： WATANABE EIICHIRO , TSUTANI HIROKI , KOIDE YASUO
IPC分类号： H01L29/786 , H01L21/336 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To provide a graphene transistor having large gate capacity that is not obtained before, and to provide a method of manufacturing the same. SOLUTION: The graphene transistor has an insulating film disposed between graphene and a low-resistance substrate, and is characterized in that the whole insulating film is formed of a homogeneous composition and has a relative permittivity of ≥4, a basic element of the insulating film and a basic element of the substrate are different, and the insulating film has a thickness such that an interference contrast in the visible light range with which the graphene can be observed through an optical microscope is provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供以前未获得的具有大栅极容量的石墨烯晶体管，并提供其制造方法。解决方案：石墨烯晶体管具有设置在石墨烯和低电阻基板之间的绝缘膜，其特征在于，整个绝缘膜由均匀的组成形成，并且具有≥4的相对介电常数，基本元素绝缘膜和基板的基本元件不同，并且绝缘膜具有使得通过光学显微镜观察石墨烯的可见光范围内的干涉对比度的厚度。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010147210A Organic field effect transistor 有权
标题翻译：有机场效应晶体管
公开(公告)号：JP2010147210A
公开(公告)日：2010-07-01
申请号：JP2008321975
申请日：2008-12-18
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： JO AKIO , FUJITA DAISUKE , WATANABE EIICHIRO
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a structure for overcoming defects characteristics of both a top-contact structure (TC) and a bottom-contact structure (BC) and for locally controlling in-surface alignment of an organic semiconductor layer though there are a variety of types as an organic field effect transistor (OFET) and each of them has advantages and disadvantages.
SOLUTION: The organic field effect transistor is constituted by embedding a source electrode and a drain electrode in a substrate, wherein recessed portions are formed in the substrate where the source electrode and drain electrode are installed respectively, the source electrode and drain electrode are installed in the recessed portions, and both side walls of the recessed portions are inclined to be opener toward upper parts.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供克服顶部接触结构（TC）和底部接触结构（BC）两者的缺陷特性的结构，并且用于局部控制有机半导体层的表面对准，尽管在那里是各种类型的有机场效应晶体管（OFET），它们各有优缺点。解决方案：有机场效应晶体管是通过将源电极和漏电极嵌入衬底中而构成的，其中在分别安装有源电极和漏电极的衬底中形成凹部，源电极和漏电极凹陷部分的两个侧壁都倾斜向上部倾斜。版权所有（C）2010，JPO＆INPIT

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