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1. 发明专利

JP2011201786A 2-endo-6-exo-DIAMINOMETHYL-BICYCLO[2,2,1]HEPTANE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译： 2-内-6-外 - 二氨基甲酰基 - 双丙基[2,2,1]庚烷及其制备方法
公开(公告)号：JP2011201786A
公开(公告)日：2011-10-13
申请号：JP2010068198
申请日：2010-03-24
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： URAGAMI TATSUNOBU , OKAZAKI MASAKI , FUKUKAWA KENICHI , ABE TAKATOSHI , YAMASHITA WATARU
IPC分类号： C07C211/19 , C07C209/52
CPC分类号： Y02P20/55
摘要： PROBLEM TO BE SOLVED: To provide highly pure 2-endo-6-exo-diaminomethyl-bicyclo[2,2,1]heptane, and a method for producing the same.SOLUTION: The 2-endo-6-exo-diaminomethyl-bicyclo[2,2,1]heptane represented by formula (IV) having purity of ≥95% when analyzed by gas chromatography is produced by: protecting amino groups in individual compounds included in an isomer mixture with protective groups; separating the isomers; and deprotecting the protective groups in the separated isomers.
摘要翻译：要解决的问题：提供高纯度的2-内-6-外 - 二氨基甲基 - 双环[2,2,1]庚烷及其制备方法。溶液：2-内-6-异 - 二氨基甲基 - 通过气相色谱法分析纯度≥95％的式（IV）表示的双环[2,2,1]庚烷是通过以下方法制备的：通过保护基保护包含在异构体混合物中的各个化合物中的氨基; 分离异构体; 并将分离的异构体中的保护基脱保护。

2. 发明专利

JP2008016677A Slurry for polishing 审中-公开
标题翻译：用于抛光的浆料
公开(公告)号：JP2008016677A
公开(公告)日：2008-01-24
申请号：JP2006187082
申请日：2006-07-06
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： OIKE SETSUKO , ETO AKINORI , MOORTHI SUNIL , KAKIGANO TAKEAKI , ABE TAKATOSHI , FUJII SHIGEHARU , SHINDO KIYOTAKA
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide slurry for CMP polishing for suppressing the occurrence of scratches, dishing, and erosion while maintaining practically sufficient polishing speed. SOLUTION: In the slurry for polishing comprising an oxidizing agent and anticorrosive, an organic fine particle is dispersed. The organic fine particle contains a monomer that has a modulus of elasticity ranging from 0.01 to 600 MPa and has at least one kind of functional group selected from a group consisting of a carboxyl group, an amido group, a hydroxyl group, a carbonyl group, a nitrile group, a glycidyl group, an alkoxy group, a thiol group, a sulfone acid group, a sulfonyl group, an azo group, an amino group, or a phosphoric group, by 3-80 wt.% to the entire monomer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于CMP抛光的浆料，以便在保持实际上足够的抛光速度的同时抑制划痕，凹陷和侵蚀的发生。解决方案：在用于包含氧化剂和防腐蚀的抛光用浆料中，分散有机细颗粒。有机细颗粒含有弹性模量为0.01至600MPa并具有至少一种选自羧基，酰胺基，羟基，羰基等的官能团的单体，腈基，缩水甘油基，烷氧基，硫醇基，砜酸基，磺酰基，偶氮基，氨基或磷酸，占全部单体的3-80重量％。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010215776A Plasma treatment method of polymer substrate 审中-公开
标题翻译：聚合物基材的等离子体处理方法
公开(公告)号：JP2010215776A
公开(公告)日：2010-09-30
申请号：JP2009063743
申请日：2009-03-17
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： MURAYAMA SHUNSUKE , ODAKAWA KENJI , ABE TAKATOSHI , SADAMOTO MITSURU
IPC分类号： C08J7/00 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a method for treating a polymer substrate, which is capable of selectively forming a functional group on a surface of the polymer substrate without causing any deposition on the polymer substrate and provides a high process adaptability. SOLUTION: The plasma treatment method includes: a first step of generating active species by exciting a gas component under atmospheric pressure or a pressure close thereto to convert the gas component into plasma; and a second step of delivering the active species to the surface of the polymer substrate to treat the surface. The gas component contains a primary alcohol as a treating agent, provided that the primary alcohol is a compound of which the Gibbs free energy calculated by a computational scientific approach is smaller for a structure having an α-carbon radical compared to that for a structure having an oxygen radical. The first and second steps are carried out in an atmosphere substantially free of water component. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理聚合物基材的方法，其能够在聚合物基材的表面上选择性地形成官能团而不会在聚合物基材上引起任何沉积，并提供高的工艺适应性。等离子体处理方法包括：通过在大气压或接近其的压力下激发气体成分以将气体成分转化为等离子体来产生活性物质的第一步骤; 以及将活性物质递送到聚合物基材的表面以处理该表面的第二步骤。气体组分含有作为处理剂的伯醇，条件是伯醇是对于具有α-碳自由基的结构，通过计算科学方法计算的吉布斯自由能与具有α-碳自由基的结构相比较的化合物相比，氧自由基。第一和第二步骤在基本上不含水分的气氛中进行。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008016678A Composition for polishing 审中-公开
标题翻译：抛光组合物
公开(公告)号：JP2008016678A
公开(公告)日：2008-01-24
申请号：JP2006187086
申请日：2006-07-06
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： OIKE SETSUKO , ETO AKINORI , MOORTHI SUNIL , KAKIGANO TAKEAKI , ABE TAKATOSHI , FUJII SHIGEHARU , SHINDO KIYOTAKA
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a composition for polishing that has practical polishing speed, also has high polishing selectivity to copper that is a metal wiring material, tantalum used as a barrier layer, and an insulation film that is an underlayer, suppresses the occurrence of erosion, and is used suitably for a semiconductor CMP process. SOLUTION: The slurry for polishing contains: a copolymer resin A containing at least one type of monomer selected from a group, comprising an amido group, a hydroxyl group, a carbonyl group, a nitrile group, a pyridyl group, a glycidyl group, an acetoacetyl group, a sulfonyl group, or an alkoxy group by 10-99 pts.wt. to 100 pts.wt. of the entire monomer; and an abrasive grain B where the modulus of elasticity is in the range of 0.01-300,000 MPa. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有实际研磨速度的抛光用组合物，对作为金属配线材料的铜，作为阻挡层使用的钽以及作为底层的绝缘膜也具有高的抛光选择性，抑制侵蚀的发生，适用于半导体CMP工序。解决方案：用于抛光的浆料包含：共聚物树脂A，其含有至少一种选自由酰胺基，羟基，羰基，腈基，吡啶基，缩水甘油基基团，乙酰乙酰基，磺酰基或烷氧基，10-99重量份。到100磅的单体; 和磨粒B，其中弹性模量在0.01-300,000MPa的范围内。版权所有（C）2008，JPO＆INPIT

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