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1. 发明专利

JP2003279821A Optical fiber introduction part sealing method and optical fiber sealing member used for the same 有权
标题翻译：光纤介绍部分密封方法和用于其的光纤密封部件
公开(公告)号：JP2003279821A
公开(公告)日：2003-10-02
申请号：JP2002085104
申请日：2002-03-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： DOBASHI YUUSUKE , MASUDA HISATOSHI , KAWAHARA YUJI , NISHITANI SHOICHIRO , MORIYASU MASAHARU , HARA SHOICHIRO
IPC分类号： G02B6/24 , G02B6/46
摘要： PROBLEM TO BE SOLVED: To provide an optical fiber introduction sealing method for excellently forming a fillet part and an optical fiber sealing member used for it. SOLUTION: A bar-shaped low melting point metal member 31 is arranged at the gap of a sleeve 13 and a fiber guide 12 and a ring-like low melting point metal member 32 is arranged at the end part of the sleeve 13 further. By a heating device 40, the low melting point metal members 31 and 32 are heated and melted. At the time, by melting the ring-like low melting point metal member 32 so as to fill the inner side, the fillet part in a desired mountain base shape is formed from the end of the sleeve 13 to the fiber guide 12. As a result, stress loads on an optical fiber 11 by a sealing member 14 are surely relaxed and the decline of the performance of the optical fiber 11 is prevented. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于良好地形成圆角部分的光纤引入密封方法和用于其的光纤密封构件。解决方案：在套筒13和纤维引导件12的间隙处布置有棒状低熔点金属构件31，并且在套筒13的端部设置环状低熔点金属构件32 进一步。通过加热装置40，将低熔点金属部件31,32加热熔融。此时，通过使环状低熔点金属构件32熔化以填充内侧，所需的山形基部形状的圆角部从套筒13的端部形成为纤维导向件12.作为结果，通过密封构件14在光纤11上的应力负载被确定地松弛，并且防止了光纤11的性能的下降。版权所有（C）2004，JPO

2. 发明专利

JP2001352659A INSULATING CONSTRUCTION FOR CABLE LEADING-IN APPARATUS FOR OPTICAL SUBMARINE REPEATER 失效
公开(公告)号：JP2001352659A
公开(公告)日：2001-12-21
申请号：JP2000174291
申请日：2000-06-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAMAYA MOTOAKI , DOBASHI YUUSUKE
IPC分类号： G02B6/00 , H02G15/14
摘要： PROBLEM TO BE SOLVED: To prevent dielectrical breakdowns due to discharge, to improve the withstand voltage performance, and to enhance the reliability by lengthening a discharge route (creeping distance) to a pressure tight box of a grounding system from a metal sleeve of a power feeding system for a repeater. SOLUTION: A discharge route prolonging means (collar 21) is provided for lengthening a discharge path 23, which reaches the pressure tight box 2 after passing through the gap between the junction surfaces of a first insulator 8 and a second insulator 17 from a first metal sleeve 7 and/or a second metal sleeve 16.

3. 发明专利

JP2002286979A OPTICAL UNDERWATER REPEATER 失效
公开(公告)号：JP2002286979A
公开(公告)日：2002-10-03
申请号：JP2001093705
申请日：2001-03-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KODA AKIHIRO , MASUKO TAKAO , DOBASHI YUUSUKE
IPC分类号： G02B6/44
摘要： PROBLEM TO BE SOLVED: To solve the problems in which identification of an optical fiber cable is difficult on a chassis resulting in inadvertently catching the cable into other members frequently during an assembling process and causing the generation of optical loss. SOLUTION: A color tone of a chassis 1 is selected so that the color tone of the chassis 1 is made different with respect to the color tone of an optical fiber cable 3.

4. 发明专利

JP2000031252A SEMICONDUCTOR MANUFACTURE DEVICE WITH ELECTROSTATIC CHUCK AND WAFER REMOVAL METHOD THERE FROM 失效
公开(公告)号：JP2000031252A
公开(公告)日：2000-01-28
申请号：JP19301198
申请日：1998-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA TAKETOSHI , TSUKASAKI TAKASHI , DOBASHI YUUSUKE , HANAZAKI MINORU
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To prevent offset of a wafer, wafer breakage, etc., and reduce reduction of producibility, by detecting the thickness of an oxide film of a wafer rear before wafer treatment, and removing a wafer by applying a series of voltage sequence to an electrostatic chuck after treatment. SOLUTION: The thickness of a wafer rear oxide film 6 attaching to a rear of a wafer 1 is measured by an optical sensor 10, while the wafer 1 is attracted to an electrostatic chuck 2 and plasma which is specified treatment is generated. High frequency power is supplied to the electrostatic chuck 2 attracting the wafer 1, plasma is generated between the electrostatic chuck 2 and an grounding electrode 32, and a wafer is attracted to the electrostatic chuck 2. After a specified time passed and treatment is finished, high frequency voltage applied to the electrostatic chuck 2 is released and plasma is extinguished. Thereafter, voltage for removal according to the thickness of the wafer rear oxide film 6 attaching to a wafer rear is applied to the electrostatic chuck 2.

5. 发明专利

JPH04265143A VACUUM TREATING EQUIPMENT 失效
公开(公告)号：JPH04265143A
公开(公告)日：1992-09-21
申请号：JP4616191
申请日：1991-02-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： DOBASHI YUUSUKE
IPC分类号： B01J3/00 , B01L99/00
摘要： PURPOSE:To improve pressure control inside treating equipment when purge gas is introduced into a vacuum container and to prevent a danger caused by the breakage of a sight glass due to internal pressure buildup. CONSTITUTION:A sight glass part is laminated glass consisting of glass layers 41 and 42 and between them provided is a clearance 46 to constitute a gas relief mechanism. When the inner glass is moved because of internal pressure buildup, a clearance is caused between the inner glass and a container to discharge gas from this clearance to the outside.

6. 发明专利

JP2000049216A PLASMA PROCESSING APPARATUS AND METHOD OF ADSORPTION BY ELECTROSTATIC CHUCKING USED IN APPARATUS THEREOF 失效
公开(公告)号：JP2000049216A
公开(公告)日：2000-02-18
申请号：JP21270098
申请日：1998-07-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： DOBASHI YUUSUKE , HANAZAKI MINORU
IPC分类号： H05H1/46 , B23Q3/15 , C23C14/50 , C23C16/44 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/302 , H01L21/683 , H02N13/00 , H01L21/68 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, that is capable of adsorbing a semiconductor wafer in a stable manner from the start of the processing of a semiconductor wafer. SOLUTION: A plasma processing apparatus 20 contains a vacuum chamber 21, a lower electrode 24 placed inside of the vacuum chamber 21, a dielectric film 23 prepared on the surface of the lower electrode 24, a processing-conditions memory member 35 that is stored with processing condition for generating plasma inside of the vacuum chamber 21 and with actual adsorption voltage to be applied between the semiconductor wafer 22 and the dielectric film 23 for mutually adsorbing to each other, a memory and processing member 36 that stores in advance the relation between the processing condition and a self-bias voltage to be generated on the surface of the semiconductor wafer 22, calculates the self-bias voltage from the processing condition, to which the actual adsorption voltage stored in the memory and processing member 36 is applied, and outputs the result, and an electrostatic-chucking power source 31 for applying the voltage to be output from the memory and processing member 36 to the lower electrode 24.

7. 发明专利

JPH11233605A ELECTROSTATIC CHUCK STAGE 失效
公开(公告)号：JPH11233605A
公开(公告)日：1999-08-27
申请号：JP3487798
申请日：1998-02-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA TAKETOSHI , TSUKASAKI TAKASHI , DOBASHI YUUSUKE , HANAZAKI MINORU
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an electrostatic chuck stage capable of mounting and removing a wafer steadily and having small residual attractive force and good withstand-voltage characteristics. SOLUTION: An electrode is constituted of a disk-shaped inner electrode 16 and a ring-shaped outer electrode 17. An insulating film 20 is formed on a side between these electrodes 16 and 17. There is a gap 18 between these electrodes 16 and 17, and a lift pin 14 is passed through the gap 18. Since the electrode includes the inner electrode 16 and the outer electrode 17, the insulating film 20 is formed easily with reliability at the side thereof. By making the resistivity of an dielectric film 19 on the surface of the electrode to be made from 10 to 10 Ωcm, or 10 Ωcm or more, the residual attractive force is made small. In addition, when the lift pin 14 is positioned adequately, defective one-side lifting or leap of the wafer on the chuck stage can be prevented.

8. 发明专利

JPH10284583A STATIC CHARGE ELIMINATING METHOD FOR ELECTROSTATIC CHUCK AND SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH10284583A
公开(公告)日：1998-10-23
申请号：JP8652297
申请日：1997-04-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： OKU KOJI , DOBASHI YUUSUKE
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To obtain a static charge eliminating method for electrostatic chuck and a semiconductor manufacturing device which can make a semiconductor wafer surely separate. SOLUTION: An electrostatic chuck electric source 12 supplies an output to an electrostatic chuck 4 by using an impressing voltage having a single pole and damping rectangular wave and having a plus or minus polarity. An electric current which is got by differentiating the impressing voltage flows in a semiconductor wafer. The differentiated electric current is an alternative current in which plus and minus polarities alternate. Because an amplitude of the alternative current becomes little with time passing, charges are gradually discharged. Therefore, the semiconductor wafer is surely separated from an electrostatic chuck 4.

9. 发明专利

JPH05299382A 失效
公开(公告)号：JPH05299382A
公开(公告)日：1993-11-12
申请号：JP10094492
申请日：1992-04-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： DOBASHI YUUSUKE
IPC分类号： C23C14/02 , C30B25/02 , C30B25/14 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To stably process a plasma by alleviating concentration and instability of an electric field and generating a stable plasma. CONSTITUTION:A second electrode 5 is disposed as a pair with a first electrode in a vacuum vessel. The electrode 5 has a gas introducing mechanism for introducing gas and a power applying mechanism for applying power for generating plasma to process a material to be processed in the vessel. Numerals 50 and 53 denote first and second gas diffusing plates for uniformly diffusing gas, which are fixed by a bolt 56 and a nut 57 by forming a gap to an electrode 20 by spacers 51, 54. The plate 53 is alumite-treated on its entire surface, and the spacers 51, 54 are formed in a ring state.

10. 发明专利

JPH11214196A PLASMA GENERATOR 失效
公开(公告)号：JPH11214196A
公开(公告)日：1999-08-06
申请号：JP1722698
申请日：1998-01-29
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： DOBASHI YUUSUKE , HANAZAKI MINORU , YONEMURA TOSHIO , TSUDA MUTSUMI , ONO KOICHI , OKU KOJI , NAKAKUMA SHINJI
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator which improves uniformity of plasma treatment and can correspond to a large diameter of a substrate. SOLUTION: Micro waves which are distributed into four rod antennae 9a, 9b, 9c, 9d through branched parts 20a, 20b, 20c of a T branch from a waveguide 5 and are radiated are introduced into a vacuum vessel 1 through four dielectric tubes 10a, 10b, 10c, 10d. In the vacuum vessel 1, a multicusp magnetic field 13 and an electron cyclotron resonance region 12 are provided by a permanent magnet 11 arranged in the surroundings to generate plasma 8 having high uniformity in a region in which plasma treatment is applied to a substrate due to mutual action of vibration electric field of micro waves and magnetic field.

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