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1. 发明专利

JPH09283070A ANALYZING METHOD AND ELECTRON MICROSCOPE 失效
公开(公告)号：JPH09283070A
公开(公告)日：1997-10-31
申请号：JP9383096
申请日：1996-04-16
申请人： HITACHI LTD
发明人： SUGA MITSUO , KAKIBAYASHI HIROSHI , MURAKOSHI HISAYA , TORII KAZUNARI
IPC分类号： H01J37/22 , H01J37/147 , H01J37/256
摘要： PROBLEM TO BE SOLVED: To change the accelerating voltage of an electron beam without adjusting the focal point, astigmatism, and analysis position by arranging a standard sample on a sample stage for the conventional electron microscope and adding the function to store two or more sets of the accelerating voltage of the electron beam, focal point, astigmatism, and the offset of a scanning coil. SOLUTION: Two or more accelerating voltages of an electron beam 103 are selected before an actual sample is observed and analyzed. The electron beam 103 having the first accelerating voltage is radiated to a standard sample 110, the focal point, astigmatism, and the offset of a scanning coil are adjusted, and these values are stored 122. An electron beam having the second accelerating voltage is radiated to the standard sample 110, the focal point, astigmatism, and the offset of the scanning coil are adjusted, and these values are stored 122. When the third and subsequent accelerating voltages are provided, they are similarly adjusted, and their values are stored. The actual sample 112 is observed and analyzed with the values of the accelerating voltage, astigmatism, and the offset read out from the memory 122.

2. 发明专利

JPH09257998A SUPERCONDUCTIVE SPECTROMETER AND MICROSCOPE 失效
公开(公告)号：JPH09257998A
公开(公告)日：1997-10-03
申请号：JP6593596
申请日：1996-03-22
申请人： HITACHI LTD
发明人： SUGA MITSUO , HOSOYA MUTSUMI , KOMINAMI SHINYA , MITA REEKO , NINOMIYA TAKESHI
IPC分类号： G21K1/06 , G21K7/00
摘要： PROBLEM TO BE SOLVED: To improve the energy resolution by providing a detection part with a superconductor to which radiation is incident and a plurality of superconducting tunnel junction parts electrically connected, and providing a signal processing part, the junction parts being arranged at the positions surrounding a specified region on one surface of the superconductor. SOLUTION: A detection part 1 has four tunnel junction parts 108 arranged to include a part of each side of square on the upper surface of radiation absorbing layers 101, 101 formed of Nb laminated on the upper surfaces of substrates 100, 100 formed of Si. Each of the parts 108 is formed in the shape of a band by sequancially laminating a lower vicinity superconducting layer 102 made of Al, a tunnel insulation film 103 made of AlOx and an upper superconducting electrode 104 made of Nb. To the electrode 104 and the layer 102 upper and lower wiring 106, 107 made of Nb respectively are connected, and on the outer circumference of the part 108 an insulation film 105 for wiring is formed.

3. 发明专利

JPH09147781A SIGNAL PROCESSING DEVICE AND ANALYTICAL ELECTRON MICROSCOPE USING THE SAME 失效
公开(公告)号：JPH09147781A
公开(公告)日：1997-06-06
申请号：JP30249795
申请日：1995-11-21
申请人： HITACHI LTD
发明人： SUGA MITSUO , OCHIAI ISAO , KANDA KIMIO , ISAGOZAWA SHIGETO
IPC分类号： G01N23/225 , H01J37/244 , H01J37/252 , H01J37/256
摘要： PROBLEM TO BE SOLVED: To provide at low cost an analytical device having a high detection limit by providing at least a means for converting signals from a plurality of detecting elements from analog to digital form using a smaller number of A/D converters than that of the detecting elements. SOLUTION: A detection signal of a detecting element 11 is input to a waveform-shaping amplifier 31 via a charge-sensitive preamplifier 21. An output of the amplifier 31 is input to an overlapping pulse eliminating device 41 via a switch 62 that is controllable by a computer 61. An output of a detecting element 12 is processed the same way as with the element 11. An output signal of the device 41 is input to the computer 61 via an A/D converter 51. Outputs of the preamplifiers 21, 22 are input to a circuit 63 forming OR signals, and an output of the circuit 63 is input to the device 41. Thus the signals from the two detecting elements are processed using one converter 51, with the result that even if the detecting area of the detecting elements is 1/2, almost the same detection sensitivity can be obtained as can be with the use of one detecting element.

4. 发明专利

JP2515947B2 失效
公开(公告)号：JP2515947B2
公开(公告)日：1996-07-10
申请号：JP13833292
申请日：1992-05-29
申请人： HITACHI LTD
发明人： SUGA MITSUO , NISHINO JUICHI , HIRATANI MASAHIKO , FUKAZAWA TOKUMI , AKAMATSU SHOICHI , TSUKAMOTO AKIRA , TARUYA YOSHINOBU , TAKAGI KAZUMASA
IPC分类号： H01L39/22

5. 发明专利

JPH07311299A SUPERCONDUCTIVE ULTRAFINE PARTICLE X-RAY SPECTROSCOPE 失效
公开(公告)号：JPH07311299A
公开(公告)日：1995-11-28
申请号：JP10646994
申请日：1994-05-20
申请人： HITACHI LTD
发明人： SUGA MITSUO , TAKAGUCHI MASANARI , NISHIDA AKIO , MURAKOSHI HISAYA , KAKIBAYASHI HIROSHI , UMETANI KEIJI , OCHIAI ISAO
IPC分类号： G21K1/06
摘要： PURPOSE:To improve the resolution and detecting efficiency by arranging superconductive ultrafine particles formed by superconductors and insulators between them so as to form a tunnel junction. CONSTITUTION:This superconductive ultrafine particle X-ray spectroscope consists of superconductive ultrafine particles 101 formed by superconductors, insulators 102 formed between adjoining superconductive ultrafine particles and superconductive electrodes 201 and 202. The adjoining superconductive ultrafine particles 101 and the insulators 102 between them forms a tunnel junction. In other words, after quasiparticles excited in superconductors by incident X rays reach the tunnel junction through diffusion, they are detected as signals by tunneling. Since the superconductors forms the ultrafine particles 101 in this process, excited quasiparticles reach the junction earli than a superconductor thin film is used. Therefore, it decreases the ratio of excited quasiparticles to relax by giving energy to phonons by, whereby the ratio of quasiparticles detected as signals is increased and the swaying of them is reduced.

6. 发明专利

JPH07296760A ANALYTICAL ELECTRON MICROSCOPE, AND ANALYZING METHOD 失效
公开(公告)号：JPH07296760A
公开(公告)日：1995-11-10
申请号：JP8283794
申请日：1994-04-21
申请人： HITACHI LTD
发明人： TAKAGUCHI MASANARI , KAKIBAYASHI HIROSHI , MURAKOSHI HISAYA , OCHIAI ISAO , NISHIDA AKIO , SUGA MITSUO , TARUYA YOSHINOBU , NINOMIYA TAKESHI , ISAGOZAWA SHIGETO , MITSUI YASUHIRO , MIYAO MASANOBU
IPC分类号： H01J37/244 , H01J37/252 , H01J37/26
摘要： PURPOSE:To provide an analytical electron microscope in which the enlarged image of a sample can be observed, the intended fine part of the sample can be elementarily analyzed with high sensitivity, and, further, even the chemical shift showing the electron state of the analyzing atom can be measured, and an analyzing method using it. CONSTITUTION:In a transmission type electron microscope 1, the electron beam emitted from an electron gun is converged onto a sample 4 by a condenser lens 2 and an objective lens 3, and the characteristic X-ray emitted from the sample 4 is detected by a superconductor X-ray detector 7 arranged near the sample 4. It is further elementarily analyzed by a pulse-height analyzer 9.

7. 发明专利

JPH10173139A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10173139A
公开(公告)日：1998-06-26
申请号：JP33203296
申请日：1996-12-12
申请人： HITACHI LTD
发明人： TORII KAZUNARI , SUGA MITSUO , FUJISAKI YOSHIHISA
IPC分类号： H01L21/8247 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To easily manufacture a highly integrated highly reliable semiconductor device with a high yield by reducing the thickness of a ferroelectric film after the film is formed thicker than prescribed and restoring the deteriorated surface layer of the ferroelectric film. SOLUTION: After a TiN film 12 having a thickness of 50nm is formed on a silicon substrate 11 as a diffusion preventing layer, a Pt film having a thickness of 200nm is formed on the film 12 as a base electrode 12 and a lead zirconate titanate film having a thickness of 150nm is formed on the film 13 as a ferroelectric film 14. Then the thickness of the film 14 is reduced to 50nm by etching the entire surface of the film 14 by reactive dry etching using a mixed gas of CF4 and Ar. After the thickness of the film 14 is reduced the deteriorated surface layer of the film 14 is restored by performing heat treatment at 300-500 deg.C. Therefore, various kinds of semiconductor memories, such as the dynamic random access memory, etc., can be manufactured ideally, because a sufficiently thin ferroelectric film having excellent characteristics can be formed with high reproducibility.

8. 发明专利

JPH08226904A ANALYTICAL ELECTRON MICROSCOPE AND ANALYTICAL METHOD 失效
公开(公告)号：JPH08226904A
公开(公告)日：1996-09-03
申请号：JP3191795
申请日：1995-02-21
申请人： HITACHI LTD
发明人： SUGA MITSUO , TAKAGUCHI MASANARI
IPC分类号： G01N23/225 , H01J37/244 , H01J37/252 , H01J37/26
摘要： PURPOSE: To observe the enlarged images of a specimen, conduct elemental analysis of objective minute portions of the specimen with high sensitivity, and determine the chemical shift that represents the electron state of an atom to be analyzed. CONSTITUTION: In a transmission electron microscope 101, electron beams emitted from an electron gun are converged to a specimen 104 by a condenser lens 102 and objective lens 103. Characteristic X rays emitted from the specimen 104 are detected with a superconducting X-ray detector 107 installed near the specimen 107, and ultimately analyzed with a signal processing system 112. In a microarea of 1nm or less, the microscope can detect a trace element of 0.1 atomic % or less and determine its chemical shift.

9. 发明专利

JP2500302B2 失效
公开(公告)号：JP2500302B2
公开(公告)日：1996-05-29
申请号：JP10410191
申请日：1991-05-09
申请人： HITACHI LTD
发明人： SUGA MITSUO , AKAMATSU SHOICHI , HIRATANI MASAHIKO , SAITO SHINICHIRO , FUKAZAWA TOKUMI , NISHINO JUICHI , KANEBORI KEIICHI , TARUYA YOSHINOBU , TAKAGI KAZUMASA
IPC分类号： H01L29/78 , H01L39/02 , H01L39/22

10. 发明专利

JPH05226711A SUPERCONDUCTIVE TRANSISTOR AND ITS OPERATING METHOD 失效
公开(公告)号：JPH05226711A
公开(公告)日：1993-09-03
申请号：JP2355892
申请日：1992-02-10
申请人： HITACHI LTD
发明人： TARUYA YOSHINOBU , FUKAZAWA TOKUMI , KABASAWA TAKANORI , AKAMATSU SHOICHI , TSUKAMOTO AKIRA , HIRATANI MASAHIKO , SUGA MITSUO , OKAMOTO MASAKUNI
IPC分类号： H01L39/22
摘要： PURPOSE:To provide a superconductive transistor, wherein a superconductive current can be gotten to an optional distance between electrodes. CONSTITUTION:This is a superconductive transistor which has a channel layer 52 consisting of copper oxide material, two pieces of source and drain superconductive electrodes 53 and 54 consisting of copper oxide material, and a gate electrode 56 being provided on he channel layer through an oxide insulating film and being one for controlling the transition between the superconductive condition of the channel layer and the normal conductive condition. This superconductive transistor is operated by applying voltage to the gate electrode 56 and changing the normal conductive condition of the channel layer 52 to the superconductive condition, and letting a superconductive current flow between two pieces of superconductive electrodes or performing its reverse.

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