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1. 发明专利

JP2005257425A Immunological examination apparatus and method 有权
标题翻译：免疫检查装置及方法
公开(公告)号：JP2005257425A
公开(公告)日：2005-09-22
申请号：JP2004068645
申请日：2004-03-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SEKI YUUKAI , TSUKAMOTO AKIRA , SUZUKI DAISUKE , YAMAOKA SHOSAKU , SUGITA NAMI , KANDORI AKIHIKO , SAITO KAZUO
IPC分类号： G01N33/53 , G01N27/72 , G01N33/542 , G01N33/553
CPC分类号： G01N33/54373 , G01N27/745
摘要： PROBLEM TO BE SOLVED: To provide an immunological examination technique capable of efficiently examinating antigen-antibody reaction magnetically with high sensitivity using magnetic fine particles and a SQUID magnetic sensor.
SOLUTION: The immunological examination apparatus has: a disk-shaped sample holder 3 for circumferentially holding a prurality of sample containers 2, each of which houses a labelled specimen prepared by labelling a specimen with magnetic fine particles; a rotary means 4 for rotating the holder 3 around its axis; and a magnetic censor 11 for detecting the magnetic field generated from the magnetized labelled specimen in a magnetic shield. The region for holding a different sample container is inserted in the magnetic shield successively by the rotation of the holder 3 and the magnetization of the labelled specimen in the first sample container and the detection of the magnetic field generated from the labelled specimen housed in the second sample container are performed parallelly.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够使用磁性细颗粒和SQUID磁性传感器以高灵敏度磁性有效地检测抗原 - 抗体反应的免疫学检查技术。解决方案：免疫检查装置具有：用于周向保持样品容器2的纤维状的盘状样品保持器3，每个容器2容纳通过用磁性细颗粒标记试样而制备的标记样品; 用于使保持器3围绕其轴线旋转的旋转装置4; 以及用于检测在磁屏蔽中从被磁化的标记样本产生的磁场的磁性检测器11。用于保持不同样品容器的区域通过保持器3的旋转和标记样品在第一样品容器中的磁化而相继插入磁屏蔽中，并且检测从第二样品容器中收集的标记样品产生的磁场样品容器平行进行。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2001042016A MAGNETIC FIELD MEASURING APPARATUS 失效
公开(公告)号：JP2001042016A
公开(公告)日：2001-02-16
申请号：JP21956399
申请日：1999-08-03
申请人： HITACHI LTD
发明人： KANDORI AKIHIKO , TSUKADA KEIJI , SAHO NORIHIDE , TANAKA HIROYUKI , TAKAGI KAZUMASA , TSUKAMOTO AKIRA
IPC分类号： A61B5/05 , G01N27/72 , G01R33/035
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field measuring apparatus having a cryogenic container which can automatically hold a degree of vacuum by reducing an evaporation amount of a cryogenic cooling medium. SOLUTION: The magnetic field-measuring apparatus includes a SQUID (superconducting quantum interference device) flux meter 2 with a detect coil for detecting a magnetic field generated from an object to be inspected, a low temperature container 1 with an inner cylinder container 7 and an outer cylinder container 8 in a double structure for storing a solvent for cooling the SQUID flux meter, a level gage 4 for measuring a level of a cooling medium 5 stored inside the inner cylinder container, a thermometer 3 for measuring a temperature of the cooling medium, a vacuum gage 14 and a solenoid valve 15 arranged to a piping connecting a first opening 12 formed to the outer cylinder container of the low temperature container and a vacuum pump, and a control means 19 for controlling the operation of the vacuum pump with the use of at least one or more of a measured degree of vacuum, the temperature of the cooling medium and the level of the cooling medium. A space 32 between the outer cylinder container and inner cylinder container is kept in vacuum. The danger of a rupture of the container because of the abnormal evaporation of the cryogenic cooling medium in accordance with the deterioration of the degree of vacuum can be prevented.

3. 发明专利

JP2515947B2 失效
公开(公告)号：JP2515947B2
公开(公告)日：1996-07-10
申请号：JP13833292
申请日：1992-05-29
申请人： HITACHI LTD
发明人： SUGA MITSUO , NISHINO JUICHI , HIRATANI MASAHIKO , FUKAZAWA TOKUMI , AKAMATSU SHOICHI , TSUKAMOTO AKIRA , TARUYA YOSHINOBU , TAKAGI KAZUMASA
IPC分类号： H01L39/22

4. 发明专利

JPH07240541A SUPERCONDUCTIVE THREE-TERMINAL ELEMENT 失效
公开(公告)号：JPH07240541A
公开(公告)日：1995-09-12
申请号：JP3213994
申请日：1994-03-02
申请人： HITACHI LTD
发明人： TARUYA YOSHINOBU , KABASAWA TAKANORI , FUKAZAWA TOKUMI , TSUKAMOTO AKIRA , TAKAGI KAZUMASA
IPC分类号： H01L39/22
摘要： PURPOSE:To obtain a superconductive three-terminal element which has an enough gain as a circuit device and where a superconductive electrode can be provided onto both the sides of a channel layer so as to make a superconductive connection in a circuit by a method wherein a laminated film composed of a superconductive layer and a normal conductive is made to serve as a channel layer, and a channel section is put in a phase transition from a superconductive state to an insulating state and vice versa. CONSTITUTION:A superconductive three-terminal device is composed of a channel laminated layer 11 which consists of a copper oxide superconductive layer 24 and a normal conductive layer 23, a pair of copper oxide superconductive electrodes 12 and 13, an oxide insulating layer 25 coming into contact with these layers, and a superconductive or normal conductive electrode 26 which is used for applying an electrical field through the intermediary of the oxide insulating layer 25. The superconductive three-terminal device is made to operate taking advantage of such a transition that the superconductive layer 24 is turned into a superconductive state and then returned into an insulating state by controlling an electrical field, and the channel layer 11 which comprises the superconductive layer 24 is disposed above the superconductive electrodes 12 and 13. By this setup, a superconductive three-terminal element of this constitution can enhance gain by putting a switching operation in an ON-state or an OFF-state corresponding to a superconductive state or an insulating state.

5. 发明专利

JPH07235699A MICRO-BRIDGE TYPE OXIDE SUPERCONDUCTIVE JUNCTION AND SUPERCONDUCTING ELEMENT USING JUNCTION THEREOF 失效
公开(公告)号：JPH07235699A
公开(公告)日：1995-09-05
申请号：JP2506794
申请日：1994-02-23
申请人： HITACHI LTD
发明人： TAKAGI KAZUMASA , TARUYA YOSHINOBU , TSUKAMOTO AKIRA , FUKAZAWA TOKUMI , AKAMATSU SHOICHI , KABASAWA TAKANORI
IPC分类号： H01L39/22 , H01L39/24
摘要： PURPOSE:To prevent the breakdown of a junction due to charging at the time of the manufacture of an element and at the time of the measurement of element characteristics by imparting conductive characteristics, in which the electrical resistance is low at the normal temperature and the resistance is high at low temperature where superconductive characteristics are generated, to the lower section of a junction section and forming an oxide having a similar crystal structure to oxide superconductors. CONSTITUTION:A PrBa2Cu3Ox (PBCO) thin-film 31 is formed on a strontium titanate substrate 30 having a surface azimuth of (110) through a laser evaporation method. The thin-film is processed through electron beam lithography and an ion beam etching method, thus forming a pattern. The thin-film at a place corresponding to a junction section is left in size of 100mumX50mum. A YBa2Cu3Ox thin-film 32 is prepared on the thin-film through the laser evaporation method under the same conditions as the PBCO thin-film 31. The thin-film is processed, thus shaping an element pattern. The element pattern is formed in such a manner that a comparatively large pattern and a fine pattern are drawn on a resist respectively through an electron beam lithographic method, and a micro-bridge 33 is formed at the place corresponding to the junction.

6. 发明专利

JPH07106645A SUPERCONDUCTING QUANTUM INTERFERENCE ELEMENT 失效
公开(公告)号：JPH07106645A
公开(公告)日：1995-04-21
申请号：JP24425893
申请日：1993-09-30
申请人： HITACHI LTD
发明人： TSUKAMOTO AKIRA , TARUYA YOSHINOBU , AKAMATSU SHOICHI , IMAGAWA KAZUSHIGE , KABASAWA TAKANORI , FUKAZAWA TOKUMI
IPC分类号： H01L39/22 , H01L39/24
摘要： PURPOSE:To provide a Josephson junction operable at the temperature of liquid nitrogen or above and excellent in the stability of junction characteristics and reproducibility wherein the characteristics can be designed and controlled while allowing integration of the elements and to provide a superconducting quantum interference device (SQUID) having such Josephson junction. CONSTITUTION:An SNS junction has such structure as a first normal conducting metal layer 8 is deposited on an oxide superconductor layer 7 and a protective film layer 9 of chemically stable metal is deposited thereon to provide a three layer film of protective film/normal conducting metal/superconductor which is then isolated spatially by micromachining to produce two electrodes being connected through a second normal conducting metal layer 10. The three layer film of protective film/normal conducting metal/superconductor prevents deterioration of the normal conducting metal layer during micromachining process thus realizing a planar SNS junction having low contact resistance.

7. 发明专利

JPH04196183A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH04196183A
公开(公告)日：1992-07-15
申请号：JP32165590
申请日：1990-11-26
申请人： HITACHI LTD
发明人： TARUYA YOSHINOBU , FUKAZAWA TOKUMI , KABASAWA TAKANORI , TAKAGI KAZUMASA , TSUKAMOTO AKIRA , HIRATANI MASAHIKO , NISHINO JUICHI
IPC分类号： H01L39/22
摘要： PURPOSE:To embody a planer structure by which an integrated three-terminal superconducting element by determining the distance between superconductive electrodes where an oxide normal conducting section is sandwiched to be longer than the attenuation length of the amplitude of the probability of presence of a superconductive electron pair and to be shorter than a value ten times the attenuation length. CONSTITUTION:A normal conducting layer 2 is formed on a substrate 1 for superconducting three terminals where a superconducting film 3 and a groove are formed on the layer 2 so that they may be separated into two electrodes. A gate insulation film 3, which includes the groove is formed on the film 3. A gate electrode film 5 is formed in the upper part of the groove. When positive voltage is applied to an oxide conducting three-terminal device, the carrier concentration of the layer 2 is reduced so that the effective attenuation length may be shortened, which can reduce the superconducting current, thereby allowing it to work as a superconducting three-terminal device. Therefore, this device can be used as a basic device for a high speed digital logical circuit, a memory circuit, an analog circuit or a squid which detects a magnetic signal or a sensor which detects a microwave.

8. 发明专利

JPH04196182A SUPERCONDUCTOR DEVICE 失效
公开(公告)号：JPH04196182A
公开(公告)日：1992-07-15
申请号：JP32165390
申请日：1990-11-26
申请人： HITACHI LTD
发明人： TSUKAMOTO AKIRA , TARUYA YOSHINOBU , TAKAGI KAZUMASA , FUKAZAWA TOKUMI , HIRATANI MASAHIKO , KABASAWA TAKANORI
IPC分类号： H01L39/22 , H01L21/76
摘要： PURPOSE:To embody a highly integrated superconducting circuit by isolating each superconducting device or each superconducting wiring in such a manner that they may not affect each other. CONSTITUTION:A semiconductor thin film 11 is produced on a single crystal substrate 12 based on an magnetron sputtering process. A superconducting thin film is formed thereon based on reactivity deposition process. Patterns including source electrodes 8a and 8b and drain electrodes 10a and 10b are formed thereon. Then, the thin film 11 is etched and removed where an exposed section 14 of the substrate 12 is formed thereby minimizing off-state superconducting current and providing sufficient characteristic for a superconducting device. It is, therefore, possible to prepare a superconducting circuit, such as a logical circuit or a memory circuit where superconducting electric field type devices, superconducting wirings or superconducting loops are combined with a small span.

9. 发明专利

JPH02133320A PRODUCTION OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH02133320A
公开(公告)日：1990-05-22
申请号：JP28566388
申请日：1988-11-14
申请人： HITACHI LTD
发明人： HIRATANI MASAHIKO , AKAMATSU SHOICHI , SAITO SHINICHIRO , TSUKAMOTO AKIRA , MIYAUCHI KATSUMI
IPC分类号： C01G15/00 , C01G1/00 , C01G29/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To easily obtain a superconducting thin film contg. only a single compd. phase when a (Bi, Tl)-Cu type superconducting thin film having a prescribed ratio of Bi or Tl to Cu is produced, by first forming an amorphous thin film, which is then crystallized by heat treatment. CONSTITUTION:Powdery starting materials such as Bi2O3, Tl2O3, BaCO3, SrCO3, CaCO3 and CuO are weighed and mixed so as to obtain a (Bi, Tl)-Cu type superconductor having 1:2 or 1:1 ratio of Bi or Tl to Cu, e.g., Bi2Sr2Ca3Cu4Ox or Tl2Ba2Ca3Cu4Ox. An amorphous thin film is formed on a substrate by sputtering or other method with the resulting powdery mixture as starting material. A superconducting thin film contg. only a single compd. phase is obtd. by crystallizing the amorphous thin film by heat treatment at a relatively low temp. of about 400 deg.C.

10. 发明专利

JPH02106822A FORMATION OF OXIDE SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH02106822A
公开(公告)日：1990-04-18
申请号：JP25713788
申请日：1988-10-14
申请人： HITACHI LTD
发明人： AIDA TOSHIYUKI , IMAGAWA KAZUSHIGE , TSUKAMOTO AKIRA , FUKAZAWA TOKUMI , HONDA YUKIO , MIYAUCHI KATSUMI
IPC分类号： C23C14/08 , C01G29/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To facilitate the modulation control for the long periodical compound of an oxide superconductor including a high content of Tc by forcibly shielding a vapor flow generated in multiple crucibles with a shutter mounted just over the crucibles for a specific period and depositing the intermittent vapor flow on a substrate resulting in the growth thereof each atomic layer. CONSTITUTION:A vapor flow 4 generated in multiple metal crucibles 2 is forcibly shielded with an automatic shutter 7 mounted just over the crucibles, to successively produce the intermittent vapor flow corresponding to the composition of metal elements in high Tc phase. For example, in Bi system, the intermittent vapor flow including Bi, Sr, Ca and Cu is successively deposited on a substrate, in correspondence to the modulation structure of the high Tc phase, each atomic layer. Accordingly, even an compound with long periodical crystal structure can be successively grown at the atomic layer level and the intensive oxidation force of oxygen plasma can be used. Thus, it is possible to obtain a preferable oxide without turbulence of the atomic layer at a relatively low temperature.

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