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    • 3. 发明专利
    • Polishing method
    • 抛光方法
    • JP2008098369A
    • 2008-04-24
    • JP2006277909
    • 2006-10-11
    • D-Process:KkNomura Micro Sci Co Ltd株式会社D−process野村マイクロ・サイエンス株式会社
    • KOJIMA SENRIFUNAKOSHI TAKAOABE TSUGI
    • H01L21/304B24B37/00
    • PROBLEM TO BE SOLVED: To provide a polishing method capable of suppressing the generation of a scratch. SOLUTION: A polishing method comprises the step of making a metal film formed on a semiconductor substrate be in contact with a polishing pad adhered onto a rotation table, the step of polishing the metal film which is in contact with the polishing pad by rotating the rotation table, supplying polishing slurry onto the polishing pad, the step of collecting the used polishing slurry containing a metal component used in the metal film polishing step, the step of measuring the zeta potential of the collected used polishing slurry, and the step of controlling the amount of the polishing slurry to be supplied onto the polishing pad so that a measurement value obtained in the zeta potential measuring step is within a predetermined range. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供能够抑制划痕产生的抛光方法。 解决方案:抛光方法包括使形成在半导体衬底上的金属膜与附着在旋转台上的抛光垫接触的步骤,通过以下步骤抛光与抛光垫接触的金属膜: 旋转旋转台,将抛光浆料供给到抛光垫上,收集含有金属膜研磨工序中使用的金属成分的废抛光浆料的步骤,测定所收集的二次抛光浆料的ζ电位的步骤, 控制要供给到抛光垫上的抛光浆料的量,使得在ζ电位测量步骤中获得的测量值在预定范围内。 版权所有(C)2008,JPO&INPIT
    • 6. 发明专利
    • Method and apparatus for producing ultrapure water for immersion exposure
    • 用于生产渗透水的浸渍曝光的方法和装置
    • JP2011240225A
    • 2011-12-01
    • JP2010112678
    • 2010-05-14
    • Nomura Micro Sci Co Ltd野村マイクロ・サイエンス株式会社
    • ABE TSUGIYAMAKOSHI YUJI
    • C02F1/32B01D61/00B01D61/18C02F1/20C02F1/42C02F1/44C02F9/00G03F7/20H01L21/027
    • PROBLEM TO BE SOLVED: To provide a method and apparatus for producing ultrapure water for immersion exposure which can minimize operation stop due to exchange of an expendable part and miniaturize the apparatus configuration.SOLUTION: In order to produce ultrapure water for immersion exposure which is supplied to an exposure light passing space between the lowermost surface and a resist of a projection optical system in the immersion exposure apparatus, a plurality of ultraviolet irradiation devices are disposed in series along a passage, an ion exchanger is disposed on the downstream side of the ultraviolet irradiation devices, primary ultrapure water having TOC of 10 ppb or less is supplied, and one of the ultraviolet irradiation devices is used for continuously producing the ultrapure water for immersion exposure and the performance of the active ultraviolet irradiation device is monitored. When the performance of the active ultraviolet irradiation device becomes a predetermined level or less, switching to another ultraviolet irradiation device is performed to continue the continuous operation.
    • 要解决的问题:提供一种用于生产用于浸没式曝光的超纯水的方法和装置,其可以最小化由于消耗部件的更换而使操作停止并使装置构造小型化。 解决方案:为了在浸没曝光设备中产生供给到投影光学系统的最下表面和抗蚀剂之间的曝光光通过空间的浸没曝光用超纯水,将多个紫外线照射装置设置在 沿紫外线照射装置的下游侧配置有离子交换体,供给TOC为10ppb以下的初级超纯水,其中一个紫外线照射装置用于连续制造浸渍用超纯水 监测活性紫外线照射装置的曝光和性能。 当活性紫外线照射装置的性能达到预定水平或更低时,执行切换到另一紫外线照射装置以继续连续操作。 版权所有(C)2012,JPO&INPIT
    • 7. 发明专利
    • Processing method and regenerating method of silicon for electronic component
    • 电子元件硅的加工方法和再生方法
    • JP2010001181A
    • 2010-01-07
    • JP2008160956
    • 2008-06-19
    • Nomura Micro Sci Co Ltd野村マイクロ・サイエンス株式会社
    • YONEHARA TAKAHIROIIYAMA MASAMITSUABE TSUGI
    • C01B33/02
    • PROBLEM TO BE SOLVED: To provide the processing method and the regenerating method of silicon for the electronic industry, in which chemical reactions of impurity metals and carbon with silicon are inhibited in a silicon processing step and silicon recovering and regenerating steps to reduce contamination of silicon by the metals and carbon. SOLUTION: The processing method of silicon for electronic components includes processing a silicon ingot or a silicon wafer, and the regenerating method of silicon includes recovering silicon from silicon sludge containing processing waste produced by the processing and regenerating it as silicon for the electronic industry. In the methods, a gas which controls oxidation-reduction potential is added to a silicon surface to be processed or to a solution containing silicon shavings. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供在硅加工步骤中抑制杂质金属和碳与硅的化学反应的电子工业的硅的加工方法和再生方法以及硅回收和再生步骤以减少 由金属和碳污染硅。 解决方案:用于电子部件的硅的处理方法包括处理硅锭或硅晶片,并且硅的再生方法包括从含有由处理产生的处理废料的硅污泥回收硅,并将其再生成用于电子的硅 行业。 在该方法中,将控制氧化还原电位的气体添加到待加工的硅表面或加入含有硅屑的溶液中。 版权所有(C)2010,JPO&INPIT
    • 9. 发明专利
    • Pure water manufacturing method and pure water manufacturing system
    • 纯水制造方法和纯水制造系统
    • JP2014100691A
    • 2014-06-05
    • JP2012255683
    • 2012-11-21
    • Nomura Micro Sci Co Ltd野村マイクロ・サイエンス株式会社
    • YONEHARA TAKAHIROABE TSUGIYONEKAWA NAOMICHIYAMAMOTO KATSUMI
    • C02F1/20B01D61/04C02F1/32C02F1/42C02F1/44C02F9/00
    • PROBLEM TO BE SOLVED: To provide a pure water manufacturing method and a pure water manufacturing system each capable of preventing inadvertent contaminations by volatile organic matter without virtually changing an existing apparatus constitution.SOLUTION: The provided pure water manufacturing method is for treating pretreated water obtained by treating raw water within a pretreatment system within a primary pure water system equipped with a decarbonator and then treating the pretreated water within a secondary pure water system. On an occasion for performing a decarbonating treatment within the decarbonator by feeding therein treatment target water and by feeding therein blown air via a blow tube so as to induce the contact thereof with the treatment target water, the feeding quantity of the blown air is adjusted depending on the quantity of volatile organic matter within the blown air.
    • 要解决的问题:提供纯水制造方法和纯水制造系统,每个能够防止挥发性有机物的无意污染,而不会实际改变现有的装置结构。解决方案:提供的纯水制造方法是用于处理获得的预处理水 通过在装有脱碳机的初级纯水系统内处理预处理系统内的原水,然后在二次纯水系统内处理预处理的水。 在脱脂机中进行脱碳处理的场合,通过向其中供给处理对象水,并且通过吹塑管供给吹入空气,以引起与处理对象水的接触,吹送空气的供给量根据 关于吹气中挥发性有机物的数量。