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1. 发明专利

JP2019218245A Siインゴット結晶の製造方法及びその製造装置审中-公开
公开(公告)号：JP2019218245A
公开(公告)日：2019-12-26
申请号：JP2018117476
申请日：2018-06-20
申请人：株式会社第一機電 , 中嶋一雄
发明人：中嶋一雄 , 伊藤春正
IPC分类号： C30B17/00 , F27B14/14 , C30B29/06
摘要：【課題】本発明は、低歪み、低転位、低酸素濃度の種々の形状のSiインゴット結晶が得られるSiインゴット結晶の製造方法及びSiインゴット結晶の製造装置を提供することを課題とする。【解決手段】熱伝導度の悪い材料からなる板を、Si融液を入れたルツボ底の中央部に配置して、ルツボ底の中央部への入熱を阻害し、Si融液の上部中央から下部中央にかけて周りの融液温度よりも低い低温領域をSi融液内に形成し、低温領域を利用してSiインゴット結晶をルツボ壁に触れないようにSi融液内で成長させることを特徴とするSiインゴット結晶の製造方法及びSiインゴット結晶の製造装置である。【選択図】図4

2. 发明专利

JP4301921B2 Metal fluoride single crystal pulling apparatus 有权
公开(公告)号：JP4301921B2
公开(公告)日：2009-07-22
申请号：JP2003383439
申请日：2003-11-13
申请人：株式会社トクヤマ , 株式会社第一機電
发明人：春正伊藤 , 英孝宮崎 , 功雄山鹿 , 真一新田 , 裕之柳 , 輝彦縄田
IPC分类号： C30B29/12 , C30B15/00 , C30B15/14

3. 发明专利

JP2008247706A Method for growing corundum single crystal, corundum single crystal and corundum single crystal wafer 审中-公开
标题翻译：生产单晶，单晶和单晶晶体的方法
公开(公告)号：JP2008247706A
公开(公告)日：2008-10-16
申请号：JP2007094031
申请日：2007-03-30
申请人： Daiichi Kiden:Kk , Jfe Mineral Co Ltd , Jfeミネラル株式会社 , 株式会社第一機電
发明人： MATSUSHITA MITSUYOSHI , IWASAKI YOSUKE , YAMAGA NORIO
IPC分类号： C30B29/20 , C30B11/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing high quality corundum single crystal ingot at high yield, and to provide a high quality corundum single crystal for a high luminance light emitting element prepared from the ingot with a high yield.
SOLUTION: In growing the corundum single crystal, raw materials are housed in a container, then the container is led into a furnace, while the upper part of the furnace is heated to a high temperature and a zone, imparted of temperature gradient of 0.1-10.0°C/mm toward the lower part, is provided in the furnace, and the container is moved from the upper part to the lower part of the furnace through the zone imparted of this temperature gradient, thereby the raw materials in the container are unidirectionally coagulated.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高产率生长高品质刚玉单晶锭的方法，并且以高产率从由锭制备的高亮度发光元件提供高质量的刚玉单晶。解决方案：在生长刚玉单晶时，将原料装入容器中，然后将容器引入炉中，同时将炉子的上部加热到高温和区域，赋予温度梯度在炉中设置为0.1-10.0℃/ mm，并且通过施加该温度梯度的区域将容器从炉的上部移动到下部，从而使原料在容器单向凝结。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007119297A Method for production of high-melting point single crystal material 审中-公开
标题翻译：生产高熔点单晶材料的方法
公开(公告)号：JP2007119297A
公开(公告)日：2007-05-17
申请号：JP2005313613
申请日：2005-10-28
申请人： Daiichi Kiden:Kk , Tanaka Kikinzoku Kogyo Kk , 株式会社第一機電 , 田中貴金属工業株式会社
发明人： HARA NORIAKI , YAMAGA NORIO
IPC分类号： C30B11/00 , C25D1/00 , C25D1/02 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a method capable of efficiently producing a high-quality single crystal material with less defect and having a high melting point of ≥1,700°C.
SOLUTION: This invention relates to a method for producing a high-melting point single crystal material which comprises metals or metallic compounds and has a melting point of ≥1,700°C, by using the Bridgman process comprising the growth of a single crystal by moving a seed crystal-included crucible in a furnace having a temperature gradient. Here, it is preferable to use for this purpose, a thin crucible which comprises iridium produced by an electroforming method and is ≤0.3 mm in thickness.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地生产具有较少缺陷并且具有≥1,700℃的高熔点的高质量单晶材料的方法。解决方案：本发明涉及包含金属或金属化合物并且熔点≥1,700℃的高熔点单晶材料的制造方法，通过使用包含单晶生长的布里奇曼法通过将含晶种的坩埚移动到具有温度梯度的炉中。这里，优选使用包含通过电铸法制造的铱并且厚度≤0.3mm的薄坩埚。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005075916A Neutron scintillator and method for preparing the same 审中-公开
标题翻译：中子扫描仪及其制备方法
公开(公告)号：JP2005075916A
公开(公告)日：2005-03-24
申请号：JP2003307564
申请日：2003-08-29
申请人： Daiichi Kiden:Kk , Institute Of Physical & Chemical Research , 株式会社第一機電 , 独立行政法人理化学研究所
发明人： SHIMIZU HIROHIKO , ADACHI TOMOHIRO , SAKAI KENJI , HOSOYA SHOICHI , ISHII MITSURU , ASAI TADANORI
IPC分类号： G01T1/20 , C01B35/08 , C01B35/10 , C03C3/15 , C03C4/12 , C09K11/00 , C09K11/08 , C09K11/55 , C09K11/63 , C09K11/78 , G01T3/06
CPC分类号： C03C3/15 , C01B35/10 , C03C4/12
摘要： PROBLEM TO BE SOLVED: To provide a neutron scintillator formed thinner in structure than conventional neutron scintillators, and better than the conventional Li-based scintillator in gamma ray sensitivity and in position resolution.
SOLUTION: For the preparation of the neutron scintillator, which is in the form of glass wherein Ce is added to an oxide mainly comprising B and Li, the starting material which is a mixture of Li
2 B
4 O
7 and CeO
2 is heated at ≥950°C and kept for ≥1 hour, and is cooled. The cooling rate is ≥150°C/sec in the range from 800°C to 400°C.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供比常规中子闪烁体更薄的中子闪烁体，并且比传统的基于Li的闪烁体在γ射线灵敏度和位置分辨率方面更好。解决方案：对于以主要包含B和Li的氧化物中加入Ce的玻璃形式的中子闪烁体的制备，将起始原料作为Li SB 2的混合物，将B 4 7 和CeO 2 在≥950℃下加热并保持≥1小时，并冷却。在800°C至400°C的范围内，冷却速度≥150℃/秒。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004155624A Single crystal pulling apparatus for metal fluoride 审中-公开
标题翻译：金属氟化物单晶拉丝装置
公开(公告)号：JP2004155624A
公开(公告)日：2004-06-03
申请号：JP2002324772
申请日：2002-11-08
申请人： Daiichi Kiden:Kk , Tokuyama Corp , 株式会社トクヤマ , 株式会社第一機電
发明人： NAWATA TERUHIKO , KUDO MASAMI , YANAGI HIROYUKI , ITO HARUMASA
IPC分类号： C30B29/12
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus in which local solidification of the melted source material is prevented in the bottom part of the crucible during pulling a single crystal, a single crystal having a large diameter with respect to the diameter of the crucible can be stably grown, and the yield of growing a single crystal from the melt source material in the crucible can be significantly increased.
SOLUTION: The crucible in the chamber of the single crystal pulling apparatus for a metal fluoride is attached in such a manner that the periphery of the crucible bottom is directly or indirectly supported by the receptacle provided at the upper end of a supporting shaft and at least a part of the bottom center of the crucible and the upper center of the receptacle are apart from each other, preferably at ≥3 mm distance.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题的方案：提供一种在拉晶单晶时在坩埚底部防止熔融源材料的局部凝固的单晶拉制装置，具有大直径的单晶相对于可以稳定地生长坩埚的直径，并且可以显着提高坩埚中的熔体源材料生长单晶的产率。解决方案：用于金属氟化物的单晶拉制装置的腔室中的坩埚以这样的方式被安装，使得坩埚底部的周边由设置在支撑轴的上端处的容器直接或间接地支撑并且坩埚的底部中心的至少一部分和容器的上部中心彼此分开，优选地在≥3mm的距离处。版权所有（C）2004，JPO

7. 发明专利

JP2003031348A High frequency induction heating device 审中-公开
标题翻译：高频感应加热装置
公开(公告)号：JP2003031348A
公开(公告)日：2003-01-31
申请号：JP2001216784
申请日：2001-07-17
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： DOBASHI AKIRA
IPC分类号： H05B6/26 , C23C16/46 , H05B6/10
摘要： PROBLEM TO BE SOLVED: To improve a structure for cooling a quartz tube which forms a reaction chamber in a high frequency induction heating device.
SOLUTION: The device is comprising: a water passage constitutive body 21 provided at the outer periphery of the reaction chamber constitutive body 1, and fixing members 22, 37 provided respectively at the both side of the reaction chamber constitutive body, 21 water supply member 25 for holding the lower end of water passage constitutive body wherein the supply member 25 having a plurality of water supply pipes 26 screwed in the fixing member 22 and attached in radial directions, an O ring- pressing member 34 screwed in the water supply member and engaged with the outer peripheral surface of the lower end of water passage constitutive body, a drain member 40 for holding the upper end of water passage constitutive body, wherein the drain member 40 having a plurality of drain pipes 41 screwed in the fixing member 37 and attached in radial directions, an O ring-pressing member 49 screwed in the drain member and engaged with the outer peripheral surface of the upper end of water passage constitutive body, and O rings 32, 33, 47 and 48 provided between the fixing member and the water supply member, and between the water supply member and O ring-pressing member, and between the fixing member and the drain member, and between the drain member and the O ring-pressing member, respectively.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提高用于冷却在高频感应加热装置中形成反应室的石英管的结构。解决方案：该装置包括：设置在反应室主体1的外周的水通道构成体21和分别设置在反应室构成体两侧的固定构件22,37，21供水构件25 用于保持水通道本体的下端，其中供给构件25具有螺纹固定在固定构件22中并沿径向安装的多个供水管26，螺旋在供水构件中的O形圈构件34接合与水通道构成体的下端的外周面相对应设置有用于保持水通道本体的上端的排水构件40，其中，排水构件40具有多个排出管41，螺纹连接在固定构件37中并附接在径向方向上，螺旋在排放构件中并与水通道上端的外周表面接合的O形圈按压构件49 设置在固定构件和供水构件之间，以及设置在供水构件和O形环压构件之间以及固定构件和排出构件之间以及位于第二构件之间的O形环32,33,47和48之间排水构件和O形圈按压构件。

8. 发明专利

JP5721207B2 Si多結晶インゴットの製造装置、Si多結晶インゴットおよびSi多結晶ウェハー有权
标题翻译： Si多结晶硅锭的制造装置，硅多晶锭和Si晶晶片
公开(公告)号：JP5721207B2
公开(公告)日：2015-05-20
申请号：JP2010101691
申请日：2010-04-27
申请人：株式会社東北テクノアーチ , 株式会社第一機電
发明人：中嶋一雄 , 沓掛健太朗 , 小野聖
IPC分类号： C01B33/02
CPC分类号： C01B33/035

9. 发明专利

JP4824940B2 Crystal silicon manufacturing equipment 有权
公开(公告)号：JP4824940B2
公开(公告)日：2011-11-30
申请号：JP2005119166
申请日：2005-04-18
申请人：株式会社第一機電
发明人：春正伊藤 , 功雄山鹿
IPC分类号： C01B33/02

10. 发明专利

JP4599067B2 Ga compound doped polycrystalline silicon and a method of manufacturing the same 有权
公开(公告)号：JP4599067B2
公开(公告)日：2010-12-15
申请号：JP2004048434
申请日：2004-02-24
申请人：株式会社第一機電
发明人：功雄山鹿 , 照彦平沢
IPC分类号： C01B33/02

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