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1. 发明专利

JP2011230951A DEVICE FOR PRODUCING POLYCRYSTALLINE Si INGOT, POLYCRYSTALLINE Si INGOT, AND POLYCRYSTALLINE Si WAFER 有权
标题翻译：用于生产多晶硅Si INGOT，多晶硅Si掺杂和多晶Si硅晶体的器件
公开(公告)号：JP2011230951A
公开(公告)日：2011-11-17
申请号：JP2010101691
申请日：2010-04-27
申请人： Daiichi Kiden:Kk , Tohoku Techno Arch Co Ltd , 株式会社東北テクノアーチ , 株式会社第一機電
发明人： NAKAJIMA KAZUO , KUTSUKAKE KENTARO , ONO SEI
IPC分类号： C01B33/02
CPC分类号： C01B33/035
摘要： PROBLEM TO BE SOLVED: To provide a device for producing a polycrystalline Si ingot, with which it is possible to control the growth direction, arrangement, configuration, and distribution of dendrite crystals that are to be generated in the beginning of growth, and with which a high-quality highly homogeneous polycrystalline Si ingot can be produced, and to provide a polycrystalline Si ingot and a polycrystalline Si wafer.SOLUTION: In the vicinity of the bottom or surface of a Si melt 2 placed in a crucible 1, a local area 2a in which the melt has a low temperature and a high degree of supercooling and which has the shape of a line, point, circle, circular circumstance, or circular arc or of a combination of two or more thereof can be formed so that a plurality of dendrite crystals 3 can be generated from an area having a high melt temperature toward the local area 2a, which has a low melt temperature, or a plurality of dendrite crystals 3 can be generated from the local area 2a, which has a low melt temperature, toward an area having a high melt temperature, by changing the degree of supercooling of the local area 2a, which is present in the vicinity of the bottom or surface of the Si melt 2.
摘要翻译：要解决的问题：提供一种用于制造多晶硅锭的装置，通过该装置可以控制在生长开始时产生的枝晶晶体的生长方向，配置，构型和分布，并且可以制造高质量的高度均匀的多晶硅锭，并且提供多晶Si锭和多晶Si晶片。解决方案：在放置在坩埚1中的Si熔体2的底部或表面附近，熔融物具有低温和高过冷度的局部区域2a，其形状为线可以形成点状，圆形，圆形状或圆弧状或两种以上的组合，从而能够从具有高熔融温度的区域向局部区域2a产生多个枝晶3，可以通过改变局部区域2a的过冷度从具有低熔融温度的局部区域2a向熔融温度高的区域产生低熔点温度或多个枝晶晶体3，存在于Si熔体2的底部或表面附近。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2006335582A Crystalline silicon manufacturing unit and its manufacturing method 审中-公开
标题翻译：水晶硅制造单位及其制造方法
公开(公告)号：JP2006335582A
公开(公告)日：2006-12-14
申请号：JP2005158734
申请日：2005-05-31
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： SAITO TADASHI , YAMAGA NORIO , HIRASAWA TERUHIKO
IPC分类号： C01B33/02 , B22D23/06 , B22D25/04 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a high productivity crystalline silicon manufacturing unit capable of manufacturing many crystalline silicon ingot at a time, and its manufacturing method.
SOLUTION: A plurality of crucibles 16 are put on a cradle 18, and the neighboring sides of the plurarity of the crucibles 16 are contacted each other. By carrying out heating and melting or cooling in this condition, cracking occurs only at the angular parts of four corners and it does not occur in the angular part where crucibles 16 are contacted. As the result, a plurarity of more uniform crystalline silicon ingot can be manufactured than the current method in which the crucible is manufactured only one at a time.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一个能够一次制造许多晶体硅锭的高生产率晶体硅制造单元及其制造方法。解决方案：多个坩埚16放置在支架18上，并且坩埚16的多余的相邻侧面彼此接触。通过在这种条件下进行加热和熔化或冷却，仅在四个角的角部发生裂纹，并且不会发生在与坩埚16接触的角部。结果，与目前仅一次制造坩埚的方法相比，可以制造更均匀的结晶硅锭的多晶。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2008247706A Method for growing corundum single crystal, corundum single crystal and corundum single crystal wafer 审中-公开
标题翻译：生产单晶，单晶和单晶晶体的方法
公开(公告)号：JP2008247706A
公开(公告)日：2008-10-16
申请号：JP2007094031
申请日：2007-03-30
申请人： Daiichi Kiden:Kk , Jfe Mineral Co Ltd , Jfeミネラル株式会社 , 株式会社第一機電
发明人： MATSUSHITA MITSUYOSHI , IWASAKI YOSUKE , YAMAGA NORIO
IPC分类号： C30B29/20 , C30B11/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing high quality corundum single crystal ingot at high yield, and to provide a high quality corundum single crystal for a high luminance light emitting element prepared from the ingot with a high yield.
SOLUTION: In growing the corundum single crystal, raw materials are housed in a container, then the container is led into a furnace, while the upper part of the furnace is heated to a high temperature and a zone, imparted of temperature gradient of 0.1-10.0°C/mm toward the lower part, is provided in the furnace, and the container is moved from the upper part to the lower part of the furnace through the zone imparted of this temperature gradient, thereby the raw materials in the container are unidirectionally coagulated.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高产率生长高品质刚玉单晶锭的方法，并且以高产率从由锭制备的高亮度发光元件提供高质量的刚玉单晶。解决方案：在生长刚玉单晶时，将原料装入容器中，然后将容器引入炉中，同时将炉子的上部加热到高温和区域，赋予温度梯度在炉中设置为0.1-10.0℃/ mm，并且通过施加该温度梯度的区域将容器从炉的上部移动到下部，从而使原料在容器单向凝结。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007119297A Method for production of high-melting point single crystal material 审中-公开
标题翻译：生产高熔点单晶材料的方法
公开(公告)号：JP2007119297A
公开(公告)日：2007-05-17
申请号：JP2005313613
申请日：2005-10-28
申请人： Daiichi Kiden:Kk , Tanaka Kikinzoku Kogyo Kk , 株式会社第一機電 , 田中貴金属工業株式会社
发明人： HARA NORIAKI , YAMAGA NORIO
IPC分类号： C30B11/00 , C25D1/00 , C25D1/02 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a method capable of efficiently producing a high-quality single crystal material with less defect and having a high melting point of ≥1,700°C.
SOLUTION: This invention relates to a method for producing a high-melting point single crystal material which comprises metals or metallic compounds and has a melting point of ≥1,700°C, by using the Bridgman process comprising the growth of a single crystal by moving a seed crystal-included crucible in a furnace having a temperature gradient. Here, it is preferable to use for this purpose, a thin crucible which comprises iridium produced by an electroforming method and is ≤0.3 mm in thickness.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地生产具有较少缺陷并且具有≥1,700℃的高熔点的高质量单晶材料的方法。解决方案：本发明涉及包含金属或金属化合物并且熔点≥1,700℃的高熔点单晶材料的制造方法，通过使用包含单晶生长的布里奇曼法通过将含晶种的坩埚移动到具有温度梯度的炉中。这里，优选使用包含通过电铸法制造的铱并且厚度≤0.3mm的薄坩埚。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005075916A Neutron scintillator and method for preparing the same 审中-公开
标题翻译：中子扫描仪及其制备方法
公开(公告)号：JP2005075916A
公开(公告)日：2005-03-24
申请号：JP2003307564
申请日：2003-08-29
申请人： Daiichi Kiden:Kk , Institute Of Physical & Chemical Research , 株式会社第一機電 , 独立行政法人理化学研究所
发明人： SHIMIZU HIROHIKO , ADACHI TOMOHIRO , SAKAI KENJI , HOSOYA SHOICHI , ISHII MITSURU , ASAI TADANORI
IPC分类号： G01T1/20 , C01B35/08 , C01B35/10 , C03C3/15 , C03C4/12 , C09K11/00 , C09K11/08 , C09K11/55 , C09K11/63 , C09K11/78 , G01T3/06
CPC分类号： C03C3/15 , C01B35/10 , C03C4/12
摘要： PROBLEM TO BE SOLVED: To provide a neutron scintillator formed thinner in structure than conventional neutron scintillators, and better than the conventional Li-based scintillator in gamma ray sensitivity and in position resolution.
SOLUTION: For the preparation of the neutron scintillator, which is in the form of glass wherein Ce is added to an oxide mainly comprising B and Li, the starting material which is a mixture of Li
2 B
4 O
7 and CeO
2 is heated at ≥950°C and kept for ≥1 hour, and is cooled. The cooling rate is ≥150°C/sec in the range from 800°C to 400°C.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供比常规中子闪烁体更薄的中子闪烁体，并且比传统的基于Li的闪烁体在γ射线灵敏度和位置分辨率方面更好。解决方案：对于以主要包含B和Li的氧化物中加入Ce的玻璃形式的中子闪烁体的制备，将起始原料作为Li SB 2的混合物，将B 4 7 和CeO 2 在≥950℃下加热并保持≥1小时，并冷却。在800°C至400°C的范围内，冷却速度≥150℃/秒。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004155624A Single crystal pulling apparatus for metal fluoride 审中-公开
标题翻译：金属氟化物单晶拉丝装置
公开(公告)号：JP2004155624A
公开(公告)日：2004-06-03
申请号：JP2002324772
申请日：2002-11-08
申请人： Daiichi Kiden:Kk , Tokuyama Corp , 株式会社トクヤマ , 株式会社第一機電
发明人： NAWATA TERUHIKO , KUDO MASAMI , YANAGI HIROYUKI , ITO HARUMASA
IPC分类号： C30B29/12
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus in which local solidification of the melted source material is prevented in the bottom part of the crucible during pulling a single crystal, a single crystal having a large diameter with respect to the diameter of the crucible can be stably grown, and the yield of growing a single crystal from the melt source material in the crucible can be significantly increased.
SOLUTION: The crucible in the chamber of the single crystal pulling apparatus for a metal fluoride is attached in such a manner that the periphery of the crucible bottom is directly or indirectly supported by the receptacle provided at the upper end of a supporting shaft and at least a part of the bottom center of the crucible and the upper center of the receptacle are apart from each other, preferably at ≥3 mm distance.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题的方案：提供一种在拉晶单晶时在坩埚底部防止熔融源材料的局部凝固的单晶拉制装置，具有大直径的单晶相对于可以稳定地生长坩埚的直径，并且可以显着提高坩埚中的熔体源材料生长单晶的产率。解决方案：用于金属氟化物的单晶拉制装置的腔室中的坩埚以这样的方式被安装，使得坩埚底部的周边由设置在支撑轴的上端处的容器直接或间接地支撑并且坩埚的底部中心的至少一部分和容器的上部中心彼此分开，优选地在≥3mm的距离处。版权所有（C）2004，JPO

7. 发明专利

JP2003031348A High frequency induction heating device 审中-公开
标题翻译：高频感应加热装置
公开(公告)号：JP2003031348A
公开(公告)日：2003-01-31
申请号：JP2001216784
申请日：2001-07-17
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： DOBASHI AKIRA
IPC分类号： H05B6/26 , C23C16/46 , H05B6/10
摘要： PROBLEM TO BE SOLVED: To improve a structure for cooling a quartz tube which forms a reaction chamber in a high frequency induction heating device.
SOLUTION: The device is comprising: a water passage constitutive body 21 provided at the outer periphery of the reaction chamber constitutive body 1, and fixing members 22, 37 provided respectively at the both side of the reaction chamber constitutive body, 21 water supply member 25 for holding the lower end of water passage constitutive body wherein the supply member 25 having a plurality of water supply pipes 26 screwed in the fixing member 22 and attached in radial directions, an O ring- pressing member 34 screwed in the water supply member and engaged with the outer peripheral surface of the lower end of water passage constitutive body, a drain member 40 for holding the upper end of water passage constitutive body, wherein the drain member 40 having a plurality of drain pipes 41 screwed in the fixing member 37 and attached in radial directions, an O ring-pressing member 49 screwed in the drain member and engaged with the outer peripheral surface of the upper end of water passage constitutive body, and O rings 32, 33, 47 and 48 provided between the fixing member and the water supply member, and between the water supply member and O ring-pressing member, and between the fixing member and the drain member, and between the drain member and the O ring-pressing member, respectively.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提高用于冷却在高频感应加热装置中形成反应室的石英管的结构。解决方案：该装置包括：设置在反应室主体1的外周的水通道构成体21和分别设置在反应室构成体两侧的固定构件22,37，21供水构件25 用于保持水通道本体的下端，其中供给构件25具有螺纹固定在固定构件22中并沿径向安装的多个供水管26，螺旋在供水构件中的O形圈构件34接合与水通道构成体的下端的外周面相对应设置有用于保持水通道本体的上端的排水构件40，其中，排水构件40具有多个排出管41，螺纹连接在固定构件37中并附接在径向方向上，螺旋在排放构件中并与水通道上端的外周表面接合的O形圈按压构件49 设置在固定构件和供水构件之间，以及设置在供水构件和O形环压构件之间以及固定构件和排出构件之间以及位于第二构件之间的O形环32,33,47和48之间排水构件和O形圈按压构件。

8. 发明专利

JP2005299990A High temperature heating device 审中-公开
标题翻译：高温加热装置
公开(公告)号：JP2005299990A
公开(公告)日：2005-10-27
申请号：JP2004115233
申请日：2004-04-09
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： ITO HARUMASA
IPC分类号： F27D3/12 , F27B5/02
摘要： PROBLEM TO BE SOLVED: To provide a high temperature heating device capable of carrying out heat treatment in a high temperature of an heat treatment target object such as a wafer substrate placed in a reaction chamber.
SOLUTION: In the high temperature heating device having a heating part 11 formed with the reaction chamber 13 of an airtight state carrying out the heat treatment in the high temperature of the heat treatment target object placed on a substrate pedestal 33, a cooling part 31 which can be made airtight is provided in a heat treatment target object inserting side of the heating part 11, a shutter 52 for airtightness and a shutter 53 for heat insulating separating the cooling part 31 and the heating part 11 in airtight states are provided between the cooling part 31 and the heating part 11, both shutters 52 and 53 are opened to move the substrate pedestal 33 into the reaction chamber when carrying out heat treatment of the heat treatment target object in the reaction chamber 13, the heat treatment target object is moved from the reaction chamber 13 to the cooling part 31 and both shutters 52 and 53 are closed after the heat treatment, the heat treatment target object is cooled in the cooling part 31, and a temperature of the reaction chamber of the heating part is maintained at a certain high temperature.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够在放置在反应室中的晶片衬底等热处理对象物的高温下进行热处理的高温加热装置。解决方案：在具有加热部分11的高温加热装置中，所述加热部件11形成有反应室13，该反应室13处于放置在基板基座33上的热处理目标物体的高温下进行热处理的气密状态，在加热部11的热处理对象物插入侧，气密性挡板52和用于将冷却部31和加热部11分开的绝热挡板53设置为气密状态的部分31设置在气密状态在冷却部件31和加热部件11之间，当对反应室13，热处理对象物体进行热处理对象物的热处理时，打开两个挡板52和53，使基板台座33移动到反应室中在热处理后从反应室13移动到冷却部31，两个挡板52,53都被关闭，热处理对象物在c 熬煮部31，加热部的反应室的温度保持在一定的高温。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005239452A Ga COMPOUND-DOPED POLYCRYSTALLINE SILICON AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： Ga化合物多晶硅及其制造方法
公开(公告)号：JP2005239452A
公开(公告)日：2005-09-08
申请号：JP2004048434
申请日：2004-02-24
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： HIRASAWA TERUHIKO , YAMAGA NORIO
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a Ga compound-doped polycrystalline silicon, in which the accuracy of the measurement and the workability of Ga doping are improved and to provide the Ga compound-doped polycrystalline silicon hardly causing photo-degradation and having high conversion efficiency stably.
SOLUTION: A polycrystalline silicon is grown by doping a Ga compound which is solid at a temperature higher than the ordinary temperature. As a result, the accuracy and workability in weighing are improved compared to that in a conventional one. When the Ga compound-doped polycrystalline silicon is used for a solar cell, photo-degradation is hardly caused and high conversion efficiency is stably provided.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造Ga化合物掺杂多晶硅的方法，其中测量的精度和Ga掺杂的可加工性得到改善，并且提供Ga化合物掺杂的多晶硅几乎不引起照片降解，转化效率稳定。解决方案：通过在高于常温的温度下掺杂固体的Ga化合物来生长多晶硅。结果，与现有技术相比，称重的精度和可操作性得到改善。当Ga化合物掺杂多晶硅用于太阳能电池时，几乎不引起光降解，并且稳定地提供高转换效率。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004014892A High-temperature heating apparatus 审中-公开
公开(公告)号：JP2004014892A
公开(公告)日：2004-01-15
申请号：JP2002168072
申请日：2002-06-10
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： DOBASHI AKIRA
IPC分类号： H05B6/22 , C23C16/46 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To make possible the uniform temperature of the inside of a suscepter; to make usable a low heating frequency without the restriction of any heating frequency, with respect to a high-temperature heating apparatus having the carbon suscepter used in a wafer-film manufacturing apparatus, etc.
SOLUTION: The high-temperature heating apparatus comprises a quartz tube 31 having an opening/closing portion 3 on one side and an exhausting portion 4 on the other side, an angular-tube-form suscepter 32 having a rectangular section which is made of carbon and is provided in the longitudinally central portion of the quartz tube 31, a heat insulating material 34 interposed between the outer peripheral surface of the suscepter 32 and the inner peripheral surface of the quartz tube 31, and a high-frequency induction coil 35 wound around the longitudinally outer peripheral portion of the quartz tube 31. Further, a high-frequency current is so fed to the high-frequency induction coil as to heat a heated object 33 mounted in the angular-tube-form suscepter 32.
COPYRIGHT: (C)2004,JPO

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