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1. 发明授权

EP4280460B1 ACOUSTIC RESONATOR WITH REINFORCING STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：EP4280460B1
公开(公告)日：2024-09-18
申请号：EP22214051.9
申请日：2022-12-16
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/02120130101 , H03H9/02133

2. 发明公开

EP4415260A1 BULK ACOUSTIC WAVE RESONATOR, MANUFACTURING METHOD THEREFOR, FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4415260A1
公开(公告)日：2024-08-14
申请号：EP23804887.0
申请日：2023-02-08
申请人： JWL (Zhejiang) Semiconductor Co., Ltd.
发明人： LI, Linping
IPC分类号： H03H9/17 , H03H9/02 , H03H3/02
摘要： A bulk acoustic resonator, a method for manufacturing the bulk acoustic resonator, a filter, and an electronic device are provided. A frame structure is arranged at an edge of an effective resonance region configured in the bulk acoustic resonator. An acoustic impedance of the effective resonance region corresponding to the frame structure is greater than an acoustic impedance of the effective resonance region that is outside the frame structure, which effectively suppresses parasitic transverse waves. In addition, as the frame structure includes two passivation layers, it can reduce clutter caused by additional resonance while suppressing the transverse waves. Furthermore, with the structure of the two passivation layers, the stress can be reduced and the structure stability and a Q factor can be improved.

3. 发明公开

EP4406114A1 PACKAGE COMPRISING AN ACOUSTIC DEVICE AND A CAP SUBSTRATE COMPRISING AN INDUCTOR 审中-实审
公开(公告)号：EP4406114A1
公开(公告)日：2024-07-31
申请号：EP22769636.6
申请日：2022-08-26
申请人： RF360 Singapore Pte. Ltd.
发明人： BRUNNER, Sebastian , HAGN, Peter , HATZL, Stefan Leopold , HOFER, Manuel , FAULHABER, Horst Uwe , WIESBAUER, Kurt , RAK, Florian , KRAVCHENKO, Roman
IPC分类号： H03H9/05 , H03H9/10 , H03H3/007 , H03H3/02 , H03H3/08
CPC分类号： H03H3/02 , H03H3/0073 , H03H3/08 , H03H9/0547 , H03H9/105 , H03H9/1092 , H03H9/1057 , H03H9/1014 , H03H9/1071

4. 发明公开

EP4372987A1 BULK ACOUSTIC WAVE RESONATOR DEVICE AND METHOD FOR FORMING SAME, FILTERING DEVICE, AND RADIO FREQUENCY FRONT END DEVICE 审中-实审
公开(公告)号：EP4372987A1
公开(公告)日：2024-05-22
申请号：EP22841400.9
申请日：2022-07-13
申请人： Changzhou Chemsemi Co., Ltd.
发明人： HAN, Xing , ZHOU, Jian
IPC分类号： H03H9/02 , H03H9/05 , H03H3/02
摘要： A bulk acoustic wave resonator device of the present invention comprises: a cavity; a first electrode layer, at least one end of the first electrode layer being located above or inside the cavity; a piezoelectric layer, the cavity and the first electrode layer being located on a first side of the piezoelectric layer; a second electrode layer located on a second side, a region where the first electrode layer, the second electrode layer and the piezoelectric layer overlap being a resonance region; a first passive structure located on the first side and having a first overlapping portion with at least one edge of the first electrode layer; and a second passive structure located on the second side and having a second overlapping portion with at least one edge of the second electrode layer. The first passive structure comprises: a first raised portion located inside the resonance region; and a first extension portion located outside the resonance region, wherein the first raised portion protrudes with respect to the first extension portion. The second passive structure comprises: a second raised portion located inside the resonance region; and a second extension portion located outside the resonance region, wherein the second raised portion protrudes with respect to the second extension portion. The present invention suppresses parasitic edge mode, and improves Zp and corresponding Q value.

5. 发明授权

EP3776641B1 PROCEDE DE TRANSFERT D'UNE COUCHE PIEZOELECTRIQUE SUR UN SUBSTRAT SUPPORT 有权
公开(公告)号：EP3776641B1
公开(公告)日：2024-05-15
申请号：EP19718438.5
申请日：2019-03-21
IPC分类号： H10N30/073 , H03H3/02 , H01L21/762
CPC分类号： H03H3/02 , H03H2003/02520130101 , H01L21/76254 , H10N30/073

6. 发明授权

EP4152611B1 CRYSTAL OSCILLATOR, AND METHOD FOR MAKING THE SAME 有权转让
公开(公告)号：EP4152611B1
公开(公告)日：2024-04-10
申请号：EP22191660.4
申请日：2022-08-23
发明人： HORNG, Ray-Hua , LIN, Yi-Lun
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H3/04

7. 发明授权

EP3506499B1 INTEGRATED RF FILTER USING TUNABLE BAW RESONATOR ELEMENTS 有权
公开(公告)号：EP3506499B1
公开(公告)日：2023-08-02
申请号：EP18210383.8
申请日：2018-12-05
发明人： TIMME, Hans-Jörg , BAUDER, Rüdiger
IPC分类号： H03H3/02 , H03H9/54 , H03H9/58 , H03H9/60 , H03H9/02 , H03H9/05

8. 发明公开

EP4207594A1 MANUFACTURING PROCESS FOR BULK ACOUSTIC RESONATOR, AND BULK ACOUSTIC RESONATOR 审中-实审
公开(公告)号：EP4207594A1
公开(公告)日：2023-07-05
申请号：EP20954686.0
申请日：2020-09-27
申请人： Hangzhou Xinghe Technology Co., Ltd.
发明人： LI, Linping , SHENG, Jinghao , JIANG, Zhou
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
摘要： Disclosed is a manufacturing process for a bulk acoustic resonator, the process comprising: making an acoustic mirror on a substrate; making, on the substrate, a bottom electrode layer for covering the acoustic mirror; chemically treating a peripheral part of the bottom electrode layer to form a modified layer, wherein the modified layer surrounds the bottom electrode layer; making a piezoelectric layer on the bottom electrode layer; and making a top electrode layer on the piezoelectric layer. Further disclosed is a bulk acoustic resonator, comprising a substrate, an acoustic mirror formed on the substrate, and a bottom electrode layer, a piezoelectric layer and a top electrode layer, which are sequentially formed on the substrate with the acoustic mirror, wherein part of the bottom electrode layer that is close to an edge of the acoustic mirror is chemically treated to form a modified layer. The electric field intensity between electrodes outside an effective working region is weakened or eliminated by means of forming the modified layer, and the electrodes cannot excite the piezoelectric layer therebetween to generate mechanical waves, thereby inhibiting parasitic oscillation of the resonator, and also greatly simplifying the wiring of a top electrode.

9. 发明公开

EP4113836A1 BULK ACOUSTIC RESONATOR WITH HEAT DISSIPATION STRUCTURE AND FABRICATION PROCESS 审中-实审
公开(公告)号：EP4113836A1
公开(公告)日：2023-01-04
申请号：EP20922162.1
申请日：2020-08-12
申请人： JWL (Zhejiang) Semiconductor Co., Ltd.
发明人： LI, Linping , SHENG, Jinghao , JIANG, Zhou
IPC分类号： H03H3/02 , H03H3/04
摘要： Provided are a bulk acoustic resonator having a heat dissipation structure, and a fabrication process. The bulk acoustic resonator comprises a base substrate (101), a metal heat dissipation layer (301) formed on the base substrate (101) and provided with an insulating layer (201) on the surface thereof, and a resonance functional layer (401) formed on the insulating layer (201), wherein the metal heat dissipation layer (301) and the insulating layer (201) enclose on the base substrate (101) to form a cavity (501), and a bottom electrode layer (402) in the resonance functional layer (401) covers the cavity (501). The metal heat dissipation layer (301) and metal columns (701) are arranged around the cavity (501), and as a result, the device can promptly guide heat out during use, which improves the service life of the device. In terms of structure, the bulk acoustic resonator prevents, as much as possible, the metal heat dissipation layer (301), the bottom electrode layer (402), and a top electrode layer (404) from forming a capacitor, reduces the parasitic capacitance of the resonator, and effectively improves the performance of the resonator. Moreover, the device further has an electromagnetic shielding structure, which, based on the premise of reducing the parasitic capacitance of the resonator, enables the device to have good heat dissipation and an anti-electromagnetic shielding effect during use, and enables the device to be very reliable reliable while working normally and stably.

10. 发明公开

EP3928429A1 CO-PACKAGING OF BAW FILTERS AND 3D INDUCTORS REALIZED WITH THROUGH-SUBSTRATE OR THROUGH-MOLD VIAS AND RDLS 审中-公开
公开(公告)号：EP3928429A1
公开(公告)日：2021-12-29
申请号：EP20707174.7
申请日：2020-01-17
申请人： QUALCOMM INCORPORATED
发明人： LIU, Kai , TANG, Rui , YUN, Changhan Hobie , VELEZ, Mario Francisco , KIM, Jonghae
IPC分类号： H03H3/02 , H03H9/54 , H03H9/05 , H01L23/15 , H01L23/498 , H01L23/538 , H01L23/66 , H01L23/00

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