专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP3576301B1 BUFFER AMPLIFIER CIRCUIT 有权
公开(公告)号：EP3576301B1
公开(公告)日：2024-02-28
申请号：EP19181157.9
申请日：2014-03-14
发明人： Lee, Hae-Seung
IPC分类号： H03F3/16 , H03M1/14 , H03F3/62 , H03F3/70 , H03M1/46

2. 发明公开

EP4084329A1 STACK AMPLIFIER, RADIO FREQUENCY TRANSCEIVER CIRCUIT, DEVICE AND SWITCH CONTROL METHOD 审中-公开
公开(公告)号：EP4084329A1
公开(公告)日：2022-11-02
申请号：EP20916092.8
申请日：2020-01-20
申请人： Huawei Technologies Co., Ltd.
发明人： HAN, Kefeng , LU, Lei
IPC分类号： H03F3/16
摘要： A stacked amplifier, a radio frequency transceiver circuit, a device, and a switching control method are disclosed. The stacked amplifier includes a first transistor (41), a second transistor (42), and a bias circuit (43). A bias end of the first transistor (41) is grounded, and an output end of the first transistor (41) is connected to an input end of the second transistor (42). A bias end of the second transistor (42) receives a bias voltage through the bias circuit (43). The bias circuit (43) includes a bias resistor and a variable impedance device. This can implement a high impedance in an off state, and reduce a bidirectional loss of a circuit.

3. 发明授权

EP2974008B1 BUFFER AMPLIFIER CIRCUIT 有权
公开(公告)号：EP2974008B1
公开(公告)日：2021-01-27
申请号：EP14768045.8
申请日：2014-03-14
发明人： Lee, Hae-Seung
IPC分类号： H03F3/16 , H03M1/14 , H03F3/62 , H03F3/70 , H03M1/46

4. 发明公开

EP2878927A1 Sensor circuit for measuring a physical quantity 有权
标题翻译： Sensorschaltung zur Messung einer physikalischenGröße
公开(公告)号：EP2878927A1
公开(公告)日：2015-06-03
申请号：EP13195129.5
申请日：2013-11-29
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Nikas, Antonios , Leman, Olivier , Hauer, Johann
IPC分类号： G01D5/16 , H03F3/16
CPC分类号： G01D5/16
摘要： Proposed is a sensor circuit for measuring a physical quantity,
wherein the sensor circuit comprises at least one sensing composition comprising
a variable resistor having a resistance depending on the physical quantity;
a first amplifier arrangement for outputting an output signal based on the resistance of the variable resistor, wherein the first amplifier arrangement comprises one field-effect transistor or a plurality of field-effect transistors in a telescopic cascode configuration or a plurality of field-effect transistors in a folded cascode configuration, wherein the first amplifier arrangement comprises an outer source terminal and an outer drain terminal, wherein a first terminal of the variable resistor is connected to the outer source terminal, such that the field-effect transistor having the outer source terminal and the variable resistor form a series circuit;
a feedback arrangement for feedbacking at least a part of the output signal of the first amplifier arrangement, which is obtained at the outer drain terminal, to at least one gate terminal of the field-effect transistors of the amplifier arrangement, wherein the feedback arrangement comprises at least one passive or active electronic component, which connects the outer drain terminal to the gate terminal of the field-effect transistor having the outer source terminal; and
a first current source for biasing the series circuit of the field-effect transistor having the outer source terminal and the variable resistor.
摘要翻译：提出了一种用于测量物理量的传感器电路，其中传感器电路包括至少一个感测组合物，其包括具有取决于物理量的电阻的可变电阻器; 第一放大器装置，用于基于所述可变电阻器的电阻输出输出信号，其中所述第一放大器装置包括一个场效应晶体管或多个场景效应晶体管，所述场效应晶体管或多个场效应晶体管以伸缩共源共栅配置或多个场效应晶体管在折叠共源共栅配置中，其中第一放大器装置包括外源端子和外漏极端子，其中可变电阻器的第一端子连接到外源端子，使得具有外源极端子的场效应晶体管并且可变电阻器形成串联电路; 反馈装置，用于将在外部漏极端子处获得的第一放大器装置的输出信号的至少一部分反馈到放大器装置的场效应晶体管的至少一个栅极端子，其中反馈装置包括至少一个无源或有源电子部件，其将外部漏极端子连接到具有外部源极端子的场效应晶体管的栅极端子; 以及用于偏置具有外部源极端子和可变电阻器的场效应晶体管的串联电路的第一电流源。

5. 发明公开

EP1349267A4 AMPLIFIER CIRCUIT FOR AM BROADCASING 有权
标题翻译：放大器电路，用于广播
公开(公告)号：EP1349267A4
公开(公告)日：2004-10-06
申请号：EP01272899
申请日：2001-12-27
申请人： NIIGATA SEIMITSU CO LTD
发明人： IKEDA TAKESHI , MIYAGI HIROSHI
IPC分类号： H03F1/22 , H03F1/26 , H03F3/16 , H03F3/193 , H03F3/195 , H04B1/16 , H03F3/19 , H03D1/18 , H03G3/30 , H04B1/14
CPC分类号： H03F3/195 , H03F1/223 , H03F1/26 , H03F3/193 , H03F3/1935 , H03F2200/324 , H03F2200/372 , H03F2200/541
摘要： An amplifier circuit for AM broadcasting for amplifying an inputted AM broadcast signal by an FET and outputting it. The amplifier circuit comprises FETs for signal amplification which are P-channel MOSFETs (4, 5) of relatively small flicker noise. While suppressing the flicker noise to a lowest possible level, more circuits including the RF amplifier for AM broadcasting can be integrated on one chip, thereby realizing small size and low noise of the circuits.

6. 发明公开

EP0508671A2 MMIC amplifier with extended dynamic range 失效
标题翻译： MMIC-Verstärkermit erweitertem Dynamikbereich。
公开(公告)号：EP0508671A2
公开(公告)日：1992-10-14
申请号：EP92302862.5
申请日：1992-04-01
申请人： Hughes Aircraft Company
发明人： Siddoway, Ronald T. , Estrick, Vaughn H.
IPC分类号： H03F3/16 , G01S7/02 , G01S7/66 , H03G7/06 , H03F3/345
CPC分类号： H03F1/3229 , G01S7/03
摘要： A Monolithic Microwave Integrated Circuit (MMIC) amplifier (10) with extended dynamic range includes a base circuit (12) for receiving both a first input signal, which is the signal to be amplified, and an amplifier generated second input signal. A power amplifier (14) in the base circuit (12) directly receives and amplifies the first input signal, with some unavoidable distortion to the first input signal. A first directional coupler (18) is connected with the base circuit (12) to couple the output of the power amplifier (14) with the first input signal to cancel the first input signal component from the output of the power amplifier and generate the second input signal which is only distortion. This distortion is then amplified by an error amplifier (16) in the base circuit (12), and the output of the error amplifier (16) is coupled with the output of the power amplifier (14) through a second directional coupler (20). This coupling at the second directional coupler (20) cancels the distortion from the output of the power amplifier to provide the desired amplified signal.
摘要翻译：具有扩展动态范围的单片微波集成电路（MMIC）放大器（10）包括用于接收作为要被放大的信号的第一输入信号和放大器产生的第二输入信号的基本电路（12）。基极电路（12）中的功率放大器（14）直接接收并放大第一输入信号，并对第一输入信号产生一些不可避免的失真。第一定向耦合器（18）与基极（12）连接，以将功率放大器（14）的输出与第一输入信号耦合，以从功率放大器的输出中消除第一输入信号分量，并产生第二定向耦合器输入信号只有失真。然后，该失真被基极（12）中的误差放大器（16）放大，并且误差放大器（16）的输出通过第二定向耦合器（20）与功率放大器（14）的输出耦合，。第二定向耦合器（20）处的该耦合消除了功率放大器输出端的失真，以提供所需的放大信号。

7. 发明公开

EP0037406A4 CMOS OPERATIONAL AMPLIFIER WITH REDUCED POWER DISSIPATION. 失效
标题翻译： CMOS - 可降低功耗运算放大器。
公开(公告)号：EP0037406A4
公开(公告)日：1982-02-05
申请号：EP80901914
申请日：1981-04-08
申请人： AMERICAN MICRO SYST
发明人： HAQUE YUSUF AMINUL
IPC分类号： H03F3/16 , H03F3/18 , H03F3/26 , H03F3/30 , H03F3/45
CPC分类号： H03F3/45179 , H03F3/3001 , H03F3/3008 , H03F3/3025 , H03F3/45183 , H03F2203/30018 , H03F2203/30033 , H03F2203/30036 , H03F2203/45188 , H03F2203/45224 , H03F2203/45508 , H03F2203/45674 , H03F2203/45692
摘要： Operational amplifier (10) comprised of MOSFET elements which provides for a variable drive for an output stage (18) that results in lower power dissipation and increased gain factor over comparable circuits using constant bias drive for the output stage. A bias section (14) comprised of complementary MOS elements (24, 26) is connected to a single MOSFET (40) that furnishes constant current to the signal input section of a differential amplifier section (20). The output of this differential amplifier is furnished by one path directly to one complementary MOSFET element (72) of a high impedance output stage and by another path to a level shift section (16) which provides an output to a second complementary MOSFET element (80) of the output stage. Thus, the circuit functions under class A-B operation at low power dissipation and provides high open loop gain. Additional embodiments of the invention utilize three MOSFET elements (104, 106, 108) in the level shift section or an additional output stage having an NPN transistor (120) in combination with an N channel MOSFET (122).

8. 发明公开

EP0031677A1 Class AB push-pull FET amplifiers 失效
标题翻译：推挽AB场效应晶体管放大器。
公开(公告)号：EP0031677A1
公开(公告)日：1981-07-08
申请号：EP80304561.6
申请日：1980-12-17
申请人： RCA CORPORATION
发明人： Hoover, Merle Vincent
IPC分类号： H03F3/30 , H03F3/16
CPC分类号： H03F3/3001 , H03F1/342 , H03F2203/45508
摘要： The output stage of a quasi-linear amplifier employs a p-channel and an n-channel FET (Ω1) with (Ω2) with their sources connected to relatively positive (B+) and relatively negative (B-) operating voltage rails to drive a load (LM) from their drain-to-drain connection, so that despite their being enhancement types full rail-to-rail output voltage capability (B+, B-) can be obtained without need for bootstrapping. Input signal voltage and direct-coupled feedback voltage are applied to the gate-to-gate connection of p-channel and n-channel sourcefollowers (Ω3) (Ω4) with their respective sources di- rectcoupled to the gate of the p-channel FET (Ω1) in the output stage and to the gate of the n-channel FET (S22) in the output stage, respectively, and with their respective drains connected to the relatively negative operating voltage rail (B-) and to the relatively positive operating voltage rail (B+) respectively, in a representative driver stage (Ω3, Ω4).

9. 发明公开

EP4186245A1 ELECTRET CAPSULE 审中-实审
公开(公告)号：EP4186245A1
公开(公告)日：2023-05-31
申请号：EP21867967.8
申请日：2021-09-21
申请人： Freedman Electronics Pty Limited
发明人： FREEDMAN, Peter , SCHILLEBEECKX, Pieter
IPC分类号： H04R19/01 , H04R3/06 , H03F1/08 , H04R1/08 , H03F3/16 , H03F3/185 , H03F3/345

10. 发明授权

EP1777812B1 FET BIAS CIRCUIT 有权
标题翻译： FET偏置电路
公开(公告)号：EP1777812B1
公开(公告)日：2012-11-21
申请号：EP05745432.4
申请日：2005-04-18
申请人： Yan, Yuejun
发明人： Yan, Yuejun
IPC分类号： H03F1/30 , H03B1/04 , H03F3/16
CPC分类号： H03F3/16 , H03F1/301 , H03F2200/18

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式