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1. 发明公开

EP2544218A1 PROCESS FOR PRODUCTION OF PHOTORESIST PATTERN 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON FOTOLACKMUSTERN
公开(公告)号：EP2544218A1
公开(公告)日：2013-01-09
申请号：EP11750372.2
申请日：2011-03-01
申请人： National University Corporation Hokkaido University
发明人： UENO, Kosei , MISAWA, Hiroaki
IPC分类号： H01L21/027 , G03F1/08 , G03F7/20
CPC分类号： H01L21/0274 , G03F1/50 , G03F7/2014 , G03F7/7035 , G03F7/70375 , G03F7/70408
摘要： Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.
摘要翻译：公开了一种制备光致抗蚀剂图案的方法，包括以下步骤：制备包含其上布置有金属膜的金属纳米结构并可在掩模基板上产生等离子体共振的光掩模; 制备形成在抗蚀剂基板的表面上且对具有波长（X）的光敏感的光致抗蚀剂膜; 使光掩模与光致抗蚀剂膜接触; 并且将光致抗蚀剂膜曝光成具有比波长（X）长的波长（Y）的光并且比金属纳米结构的等离子体共振带的峰值波长短，从而将金属膜的图案转印在光掩模到光刻胶膜上。

2. 发明公开

EP2530527A1 EXPOSURE APPARATUS, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：曝光装置，液晶显示装置及其制造方法液晶显示装置
公开(公告)号：EP2530527A1
公开(公告)日：2012-12-05
申请号：EP10843936.5
申请日：2010-10-29
申请人： Sharp Kabushiki Kaisha
发明人： INOUE, Iichiro , MIYACHI, Koichi
IPC分类号： G03F7/20 , G02F1/1337 , G03F1/08
CPC分类号： G02F1/133788 , G02F1/1303 , G03F1/00 , G03F1/38 , G03F1/50
摘要： This invention provides an exposure apparatus that can inhibit visual recognition of display unevenness at a joint portion even if scanning temporarily stops during scanning exposure, as well as a liquid crystal display device and a method for manufacturing the liquid crystal display device. This invention is an exposure apparatus for exposing a photoalignment film provided on a substrate. The exposure apparatus includes a light source and a photomask, and exposes the photoalignment film through the photomask while scanning the light source or the substrate. When a direction in which the light source or the substrate is scanned is taken as a scanning direction, and a direction that is orthogonal to the scanning direction is taken as a vertical direction, the photomask includes a first region and a second region that is adjacent to the first region in the vertical direction. The first region includes a plurality of first transparent portions inside a first light-shielding portion. The plurality of first transparent portions are arranged in the vertical direction. The second region includes a plurality of second transparent portions inside a second light-shielding portion. The plurality of second transparent portions are smaller than the plurality of first transparent portions. The plurality of second transparent portions are arranged in the vertical direction and are discretely dispersed in the scanning direction.
摘要翻译：本发明提供曝光装置，也可以在即使扫描扫描曝光，以及一个液晶显示装置和用于液晶显示装置的制造方法中暂时停止的接合部抑制显示不均的视觉识别。本发明是用于曝光的光取向膜设置在一个基片的曝光装置。的曝光装置包括光源和光掩模，并通过光掩模暴露所述光取向电影在扫描光源或基材。当在其中光源或基底被扫描的方向被取为扫描方向和一个方向做垂直于方向作为垂直方向的扫描，光掩模包括第一区域和第二区域都在相邻的在垂直方向上的第一区域中。所述第一区域包括：第一遮光部内第一透明部的复数。第一透明部分的多元性被布置在垂直方向上。所述第二区域包括第二遮光部内的第二透明部分复数。的第二透明部分的多元化比第一透明部分的多个较小。的第二透明部分的多元化被布置在垂直方向和离散地分散在扫描方向上。

3. 发明公开

EP2513720A1 METHOD AND DEVICE FOR PRODUCING MASKS FOR A LASER INSTALLATION FOR THE PRODUCTION OF MICROSTRUCTURES 有权
标题翻译： VEFAHREN和设备用于生产激光安装口罩微结构的生产
公开(公告)号：EP2513720A1
公开(公告)日：2012-10-24
申请号：EP10785320.2
申请日：2010-11-22
申请人： Boegli-Gravures S.A.
发明人： BOEGLI, Charles , WEISSMANTEL, Steffen , REISSE, Günter , ENGEL, Andy , BOETTCHER, Rene , STEFFEN, Werner
IPC分类号： G03F1/08 , G03F1/14 , B23K26/00 , B23K26/06 , C03C23/00
CPC分类号： G03F1/54 , B23K26/0006 , B23K26/0078 , B23K26/0624 , B23K26/066 , B23K2203/50 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002 , Y10T428/24479
摘要： The method for producing masks and/or panels for a laser system for generating microstructures on a solid-state surface, comprises scattering the opaque area laser radiations for the laser radiation of the masks and/or panels of the striking laser radiation. The areas scattering the laser radiation are modified and roughened by irradiation through femtoseconds-, picoseconds- or fluoride laser beam. The substrate is quartz glass, sapphire, calcium fluoride and magnesium fluoride. The femtosecond laser has an average wavelength of 775 nm or frequency-doubled or -tripled wavelength. The method for producing masks and/or panels for a laser system for generating microstructures on a solid-state surface, comprises scattering the opaque area laser radiations for the laser radiation of the masks and/or panels of the striking laser radiation. The areas scattering the laser radiation are modified and roughened by irradiation through femtoseconds-, picoseconds- or fluoride laser beam. The substrate is quartz glass, sapphire, calcium fluoride and magnesium fluoride. The femtosecond laser has an average wavelength of 775 nm or frequency-doubled or -tripled wavelength and the fluorine laser has a wavelength of 157 nm. The mask is produced with a number of transparent triangles or a mask with a number of stripes with gradually transparency. The mask and panels for producing microstructures on a solid-state surface, where the mask is arranged with the panels in a replacing device and exists itself the mask in a homogeneous spot of a mask projection-unit of an excimer laser system and serves the production of blaze lattice (77). The blaze lattice is arranged in optical lattice-arrays, where the lattice period of the blaze lattice is 0.5-5 mu m and the blaze lattice is linearly or circularly shaped. Each diffraction gratings-array consists of sub areas whose linear expansion has a value below the resolving power of the human eye, which contains a pixel, which is limited of a diffraction grating structure for producing single spectral color. Each sub area contains two pixels with each of a lattice constant different from one another for producing two different spectral color. The pixel area and/or the number of pixel is selected in such a way that the different spectral colors in a given view direction are superimposed to a mixed color. The wavelengths are selected for the basic spectral colors such as red, green and blue on the application and that for viewing the mixed color with the human eye. The three colors are red, green and blue with a wavelength lambda red of 630 nm, lambda green of 530 nm and lambda blue of 430 nm. The sub faces have a maximum linear expansion of 200 mu m and the associated pixel areas have a maximum linear expansion of 66.67 mu m, and are selected to character, images, logos, or additional authentication string together on a solid-body surfaces, which is a hard-coated surface of an embossing roller or an embossing stamp for embossing of packing film, where the hard material coating consists of tungsten carbide, boron carbide, silicon carbide (SiC) or similar hard materials. Independent claims are included for (1) a device for producing masks and/or panels for a laser system; and (2) a packaging film.

4. 发明公开

EP2416347A1 REFLECTIVE PHOTOMASK AND REFLECTIVE PHOTOMASK BLANK 有权转让
标题翻译： ROLLINGFÜRDIE REFLEKTIERENDE FOTOMASKE的参考文献
公开(公告)号：EP2416347A1
公开(公告)日：2012-02-08
申请号：EP10758474.0
申请日：2010-03-23
申请人： Toppan Printing Co., Ltd.
发明人： MATSUO Tadashi
IPC分类号： H01L21/027 , G03F1/08 , G03F1/16
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/58
摘要： Provided is a reflective photomask reflecting an EUV light and used to irradiate a reflected light to a transfer sample, the reflective photomask including: a substrate; a high reflection part formed on the substrate; and a low reflection part formed on the high reflection part and being patterned, wherein the low reflection part, being patterned, includes at least one or more layers being stacked; and at least one layer of the low reflection part, being patterned, includes a layer including an Sn and an oxygen.
摘要翻译：提供一种反射EUV光的反射光掩模，用于将反射光照射到转印样品上，反射光掩模包括：基板; 形成在基板上的高反射部; 以及形成在高反射部分上并被图案化的低反射部分，其中被图案化的低反射部分包括堆叠的至少一个或多个层; 并且被图案化的至少一层低反射部分包括包含Sn和氧的层。

5. 发明公开

EP2237107A3 Photomask blank and photomask 有权
标题翻译：空白光罩掩膜和
公开(公告)号：EP2237107A3
公开(公告)日：2010-12-15
申请号：EP10003481.8
申请日：2010-03-30
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Inazuki, Yukio , Kaneko, Hideo , Yoshikawa, Hiroki
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80
摘要： A photomask blank comprises a transparent substrate (1), a light-shielding film (2) of an optionally transition metal-containing silicon material, and an etching mask film (3) of a chromium compound base material. The etching mask film consists of multiple layers (31,32) of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer (31) of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer (32) of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.

6. 发明公开

EP2246737A1 Photomask blank and photomask 有权转让
标题翻译： Fotomasken-rohling和fotomaske
公开(公告)号：EP2246737A1
公开(公告)日：2010-11-03
申请号：EP10008135.5
申请日：2005-09-08
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： Yoshikawa, Hiroki , Inazuki, Yukio , Okazaki, Satoshi , Haraguchi, Takashi , Iwakata, Masahide , Takagi, Mikio , Fukushima, Yuichi , Saga, Tadashi
IPC分类号： G03F1/08
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal = 4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其间具有或不具有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，其具有透明区域和对透明板上的曝光光线的有效不透明区域。

7. 发明授权

EP1361478B1 METHOD OF MANUFACTURING PHASE SHIFT MASK AND PHASE SHIFT MASK 有权
标题翻译：一种用于生产相移掩模和相移掩膜
公开(公告)号：EP1361478B1
公开(公告)日：2009-12-30
申请号：EP02701556.9
申请日：2002-02-15
申请人： DAI NIPPON PRINTING CO., LTD.
发明人： KOKUBO, Haruo, c/o Dai Nippon Printing Co., Ltd.
IPC分类号： G03F1/08 , H01L21/027
CPC分类号： G03F1/30
摘要： A substrate single-trench type phase shift mask, comprising a light shielding layer pattern having a shifter part and a non-shifter part positioned adjacent to each other and a light shielding film for continuously covering the shifter part ranging from the end part of the shifter part to the end part of the non-shifter part including the side surface parts of a trenched part (recessed part) for forming the shifter part, characterized in that the side surface parts are inclined divergently toward the surface of a substrate.

8. 发明公开

EP2003498A9 PHOTOMASK, METHOD FOR MANUFACTURING SUCH PHOTOMASK, PATTERN FORMING METHOD USING SUCH PHOTOMASK AND MASK DATA CREATING METHOD 审中-公开
标题翻译：光掩膜，用于制备这种光掩膜，形成了以光掩膜和方法的模式创建掩模数据方法
公开(公告)号：EP2003498A9
公开(公告)日：2009-04-22
申请号：EP07737404.9
申请日：2007-02-27
申请人： Panasonic Corporation
发明人： MISAKA, Akio c/o Matsushita Electric Industrial Co., Ltd.
IPC分类号： G03F1/08
CPC分类号： G03F1/32 , G03F1/29
摘要： A mask pattern including a light-shielding portion 101 and a semi-light-shielding portion 102 is provided on a transparent substrate 100 having a transparent property against exposing light so as to be surrounded with a transparent portion 104 . The semi-light-shielding portion 102 is disposed in an outer region of the mask pattern and partially transmits the exposing light in an identical phase to the exposing light passing through the transparent portion 104 .

9. 发明授权

EP1688789B1 Half-tone stacked film, photomask-blank, photomask and fabrication method thereof 有权转让
标题翻译：半色调层堆叠，光掩模坯料，其制备光掩模的方法和
公开(公告)号：EP1688789B1
公开(公告)日：2009-04-22
申请号：EP06002281.1
申请日：2006-02-03
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： Yoshikawa, Hiroki Shin-Etsu Chemical Co., Ltd. , Inazuki, Yukio Shin-Etsu Chemical Co., Ltd. , Kinase, Yoshinori Shin-Etsu Chemical Co., Ltd. , Okazaki, Satoshi Shin-Etsu Chemical Co., Ltd. , Morita, Motohiko Toppan Printing Co., Ltd. , Saga, Tadashi Toppan Printing Co., Ltd.
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/54 , G03F1/32 , Y10T428/31616

10. 发明公开

EP2034359A2 Non absorbing reticle and method of making same 审中-公开
标题翻译： Nicht absorptionierende Fotomaske und Verfahren zu ihrer Herstellung
公开(公告)号：EP2034359A2
公开(公告)日：2009-03-11
申请号：EP08021929.8
申请日：2000-10-20
申请人： ASML Holding N.V.
发明人： McCullough, Andrew, W.
IPC分类号： G03F1/08 , G03F1/14
CPC分类号： G03F1/38 , G03F1/46 , G03F1/50 , G03F1/54
摘要： A photolithographic reticle comprising a transparent substrate; reflective lands on said transparent substrate, said reflective lands having a first width and electromagnetic radiation blocking lands having a second width, the second width being larger than the first width of said reflective lands, said electromagnetic radiation blocking lands located on said reflective lands and said transparent substrate, such that edges formed by said electromagnetic radiation blocking lands are in contact with said transparent substrate (as granted omitting the wavelength; see paragraph 9 stating that other wavelengths can be used as well).
摘要翻译：包括透明基板的光刻掩模版; 所述反射区域具有第一宽度和具有第二宽度的电磁辐射阻挡区域，所述第二宽度大于所述反射区域的第一宽度，所述电磁辐射阻挡区域位于所述反射区域上，所述第二宽度大于所述反射区域的第一宽度，使得由所述电磁辐射阻挡平台形成的边缘与所述透明基板接触（如省略波长;如第9段所述，也可以使用其它波长）。

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