会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明公开
    • POWER AMPLIFIER AND COMMUNICATION BASE STATION
    • EP4340222A1
    • 2024-03-20
    • EP22806535.5
    • 2022-04-28
    • ZTE Corporation
    • LIU, DikaiSHI, RongLI, PengjunSONG, LindongWEI, Dong
    • H03F3/20H03F1/07H04W88/08
    • The embodiments of the present application relate to the technical field of electronics, and disclosed are a power amplifier and a communication base station. In some embodiments of the present application, the power amplifier comprises a main power amplifier unit 11, an auxiliary power amplifier unit 12, an envelope acquisition unit 13 and a power control unit 14, wherein an input end of the main power amplifier unit 11 and an input end of the auxiliary power amplifier unit 12 are connected to an electrical signal, and an output end of the main power amplifier unit 11 is coupled to an output end of the auxiliary power amplifier unit 12, so as to perform power amplification on the electrical signal; the power control unit 14 comprises a first power control assembly 141, at least one main power amplifier unit 11 is connected to the electrical signal by means of the first power control assembly 141, and a control end of the first power control assembly 141 is connected to the envelope acquisition unit 13; and/or the power control unit 14 comprises a second power control assembly 142, at least one auxiliary power amplifier unit 12 is connected to the electrical signal by means of the second power control assembly 142, and a control end of the second power control assembly 142 is connected to the envelope acquisition unit 13.
    • 9. 发明公开
    • POWER AMPLIFYING EQUIPMENT
    • 功率放大器
    • EP3255791A1
    • 2017-12-13
    • EP15885843.1
    • 2015-03-24
    • HUAWEI TECHNOLOGIES CO., LTD.
    • WANG, YanhuiZHANG, XikunWEI, Qianhua
    • H03F3/20H03F1/07
    • H03F1/07H03F1/56H03F3/195H03F3/20H03F3/211H03F3/245H03F3/602H03F2200/387H03F2200/451
    • The present invention discloses a power amplification device, including a first amplification branch 210, a second amplification branch 220, a harmonic injection unit 230, and a first output matching unit 240. A first amplifier 211 in the first amplification branch 210 supports a first frequency. A second amplifier 221 in the second amplification branch 220 supports the first frequency and a second frequency, and the second amplifier 221 is turned off for a signal of the first frequency that has a power value lower than an enabling threshold. The harmonic injection unit 230 injects a signal of the second frequency that is input from a second input terminal I2 to a signal of the first frequency that is input from a first input terminal I1, to obtain a signal of the first frequency that has undergone harmonic injection. A first output terminal O1 is configured to output the signal of the first frequency that has undergone harmonic injection, and a second output terminal O2 is configured to output a signal of the first frequency that is from the second input terminal 12, and the first output terminal O1 and the second output terminal O2 are open for the signal of the second frequency. The power amplification device has a simple structure and relatively high efficiency.
    • 本发明公开了一种功率放大装置,包括第一放大支路210,第二放大支路220,谐波注入单元230和第一输出匹配单元240.第一放大支路210中的第一放大器211支持第一频率 。 第二放大支路220中的第二放大器221支持第一频率和第二频率,并且第二放大器221关闭具有低于启用阈值的功率值的第一频率的信号。 谐波注入单元230将从第二输入端子I2输入的第二频率的信号注入到从第一输入端子I1输入的第一频率的信号中,以获得已经受到谐波的第一频率的信号 注射。 第一输出端O1用于输出经过谐波注入的第一频率信号,第二输出端O2用于输出第二输入端12输出的第一频率信号,第一输出端 端子O1和第二输出端子O2对于第二频率的信号是开路的。 功率放大装置结构简单,效率较高。
    • 10. 发明公开
    • POWER TUBE CONNECTING STRUCTURE OF POWER AMPLIFIER AND POWER AMPLIFIER
    • 功率放大器和功率放大器的功率管连接结构
    • EP3250012A1
    • 2017-11-29
    • EP16748698.4
    • 2016-02-03
    • HUAWEI TECHNOLOGIES CO., LTD.
    • LI, SonglinTIAN, PengboWANG, QingyunXU, Liang
    • H05K1/18H03F3/20
    • H05K1/183H03F3/22H05K3/3442H05K2201/09036H05K2203/1178
    • A power tube connection structure of a power amplifier is disclosed, including a substrate (1), a printed circuit board (2) covering an upper surface of the substrate (1), and a power tube (3), where a through groove (21) allowing the power tube (3) to pass through is cut into the printed circuit board (2), a mounting groove (11) is cut into the upper surface of the substrate (1) at a location that is corresponding to the through groove (21), one end of the power tube (3) extends through the through groove (21), and is welded onto a bottom face of the mounting groove (11), the end of the power tube (3) that extends into the mounting groove (11) abuts onto a side wall of the mounting groove (11) that is close to an output end of the power amplifier, and a solder flux escape channel (12) is made into the side wall of the mounting groove (11) that is close to the output end of the power amplifier. The power tube connection structure may be applied to a drop-in power amplifier, and can resolve a problem of a solder void at the bottom of a prior-art power tube.
    • 本发明公开了一种功率放大器的功率管连接结构,包括基板(1),覆盖基板(1)上表面的印刷电路板(2)和功率管(3),其中, (1)的上表面中的与贯穿孔相对应的位置处切割安装凹槽(11),使得功率管(3)能够穿过该切口进入到印刷电路板(2) 其特征在于,所述功率管(3)的一端延伸穿过所述通槽(21)并焊接在所述安装槽(11)的底面上,所述功率管(3) 安装槽11靠近安装槽11靠近功率放大器输出端的侧壁,焊料流逸出通道12设置在安装槽11的侧壁上。 11)接近功率放大器的输出端。 功率管连接结构可以应用于嵌入式功率放大器,并且可以解决现有技术功率管底部的焊接空隙问题。