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1. 发明公开

EP4449108A1 ION SOURCE ASSEMBLY WITH MULTIPLE ELLIPTICAL FILAMENTS 审中-实审
公开(公告)号：EP4449108A1
公开(公告)日：2024-10-23
申请号：EP22908297.9
申请日：2022-12-13
申请人： INFICON, Inc. , Vollero, Michael , Weder, Mario , Wagner, Jochen
发明人： VOLLERO, Michael , WEDER, Mario , WAGNER, Jochen
IPC分类号： G01N27/623 , H01J27/20 , H01J37/08 , H01J37/30 , H01J49/14 , H01J1/13
CPC分类号： H01J49/147 , H01J27/205

2. 发明公开

EP4432328A1 ELECTRON GUN, ELECTRON BEAM APPLICATION DEVICE, AND METHOD FOR FORMING MULTI-ELECTRON BEAM 审中-实审
公开(公告)号：EP4432328A1
公开(公告)日：2024-09-18
申请号：EP22892632.5
申请日：2022-10-28
申请人： Photo Electron Soul Inc.
发明人： IIJIMA, Hokuto
IPC分类号： H01J37/06 , H01J37/073 , H01J37/28 , H01J1/34
CPC分类号： H01J37/073 , H01J37/06 , H01J37/28 , H01J1/34
摘要： An object is to provide an electron gun, an electron beam applicator, and a multi-electron beam forming method that can form more electron beams than the number of lenses of a multi-lens array. The object can be achieved by an electron gun including: an electron source configured to generate releasable electrons; an anode configured to form an electric field between the electron source and the anode, extract the releasable electrons by the formed electric field, and form electron beams; and a multi-lens array, in which when electron beams with which the multi-lens array is irradiated are defined as first electron beams, m first electron beams (m is any integer of two or greater) are formed, the multi-lens array has n lenses (n is any integer of two or greater), and when electron beams emitted from the multi-lens array are defined as second electron beams, a maximum of m x n second electron beams can be formed.

3. 发明公开

EP4388571A1 MICROCHANNEL PLATE IMAGE INTENSIFIERS AND METHODS OF PRODUCING THE SAME 审中-实审
公开(公告)号：EP4388571A1
公开(公告)日：2024-06-26
申请号：EP22859000.6
申请日：2022-08-15
申请人： SiOnyx, LLC
发明人： PRALLE, Martin U. , VINEIS, Christopher
IPC分类号： H01J1/34 , H01J9/12 , H01J31/50
CPC分类号： H01J31/507 , H01J2231/501620130101

4. 发明公开

EP4379767A1 ELECTRON SOURCE, MANUFACTURING METHOD THEREFOR, AND DEVICE COMPRISING ELECTRON SOURCE 审中-实审
公开(公告)号：EP4379767A1
公开(公告)日：2024-06-05
申请号：EP22852708.1
申请日：2022-06-23
申请人： Denka Company Limited , National Institute for Materials Science
发明人： CHATANI, Hiromitsu , ISHIKAWA, Daisuke , TANG, Jie , OHKUBO, Tadakatsu , TANG, Shuai , UZUHASHI, Jun , HONO, Kazuhiro
IPC分类号： H01J37/06 , H01J9/02 , H01J9/04 , H01J1/148
CPC分类号： H01J9/02 , H01J37/06 , H01J1/148 , H01J9/04
摘要： A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.

5. 发明公开

EP4376045A1 PHOTOCATHODE INCLUDING NANOSTRUCTURES FOR EXTENDED WAVELENGTHS 审中-实审
公开(公告)号：EP4376045A1
公开(公告)日：2024-05-29
申请号：EP23208066.3
申请日：2023-11-06
申请人： L3Harris Technologies, Inc.
发明人： PANTHA, Bed , BECKER, Jacob J. , BURNSED, Jon D.
IPC分类号： H01J1/34 , H01J9/12 , H01J31/50
CPC分类号： H01J1/34 , H01J9/12 , H01J31/507 , H01J2201/342320130101
摘要： A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.

6. 发明公开

EP4358110A1 EMITTER, FIELD EMISSION ASSEMBLY AND ELECTROMAGNETIC WAVE GENERATOR INCLUDING THE SAME 审中-实审
公开(公告)号：EP4358110A1
公开(公告)日：2024-04-24
申请号：EP22209182.9
申请日：2022-11-23
申请人： Awexome Ray, Inc.
发明人： CHOI, Hong Soo , KIM, Young Bae , CHO, Hyeongu , LEE, Namkyu , JEONG, Keunsoo , GIHM, Se Hoon , CHOI, Jiwon
IPC分类号： H01J35/06 , H01J1/304
CPC分类号： H01J35/065 , H01J1/304 , H01J2201/3046920130101 , H01J2201/3040320130101 , H01J2201/304320130101
摘要： An emitter, a field emission assembly, and an electromagnetic wave generator are provided, and the emitter is an emitter for emitting electrons in an electromagnetic wave generator and is in the form of a sheet in which a plurality of yarns including carbon nanotube (CNT) fibers are weaved.

7. 发明公开

EP4322196A2 CHARGED PARTICLE OPTICS COMPONENTS AND THEIR FABRICATION 审中-实审
公开(公告)号：EP4322196A2
公开(公告)日：2024-02-14
申请号：EP23190282.6
申请日：2023-08-08
申请人： FEI COMPANY
发明人： MOHAMMADI-GHEIDARI, Ali , HENSTRA, Alexander , MELE, Luigi
IPC分类号： H01J37/147 , H01J37/153 , H01J1/46 , H01J9/14 , H01J37/28
摘要： The present invention is directed to an electrode component 200 with at least two electrodes 202,204 or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and/or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and/or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and/or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

8. 发明授权

EP3489988B1 PHOTOCATHODE ASSEMBLY FOR A VACUUM PHOTOELECTRIC DEVICE WITH A SEMI-TRANSPARENT PHOTOCATHODE 有权
公开(公告)号：EP3489988B1
公开(公告)日：2024-02-07
申请号：EP17831423.3
申请日：2017-06-14
发明人： GOL'DBERG, Iosif Isaakovich , DOLGIKH, Aleksandr Vladimirovich , LOKTIONOV, Vladimir Il'ich
IPC分类号： H01J31/50 , H01J40/06 , H01J43/08 , H01J1/34 , H01J31/26

9. 发明授权

EP3886137B1 CHARGED PARTICLE BEAM SOURCE 有权
公开(公告)号：EP3886137B1
公开(公告)日：2024-01-10
申请号：EP21163852.3
申请日：2021-03-22
发明人： Liu, Kun , Randolph, Steven
IPC分类号： H01J1/148 , H01J1/92 , H01J37/065

10. 发明公开

EP4270441A1 ELECTRON SOURCE, METHOD FOR MANUFACTURING SAME, AND DEVICE PROVIDED WITH ELECTRON SOURCE 审中-实审
公开(公告)号：EP4270441A1
公开(公告)日：2023-11-01
申请号：EP21910702.6
申请日：2021-12-20
申请人： Denka Company Limited
发明人： CHATANI, Hiromitsu
IPC分类号： H01J37/06 , H01J9/02 , H01J9/04 , H01J1/148 , H01J1/18
摘要： A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 µm.

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