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    • 2. 发明公开
    • VERFAHREN ZUR ÖRTLICH HOCHAUFGELÖSTEN, MASSENSPEKTROSKOPISCHEN CHARAKTERISIERUNG VON OBERFLÄCHEN MITTELS EINER RASTERSONDENTECHNIK
    • FOR当地的方法解决了,质谱表面特性通过网格探针技术手段
    • EP1523652A1
    • 2005-04-20
    • EP03787732.1
    • 2003-07-24
    • JPK Instruments AG
    • KNEBEL, DetlefAMREIN, Matthias
    • G01B7/34G12B21/00G01N27/00
    • G01Q30/02G01Q60/22H01J49/04Y10S977/849Y10S977/86Y10S977/863
    • The invention relates to a combined method, according to which a high-resolution reproduction of a sample surface is registered using scanning force microscopy and a locally highly resolved chemical nature of the sample surface, said nature being correlated with the reproduction, is measured using mass spectroscopy. The chemical analysis of the surface takes place after the laser desorption of a limited surface area. To achieve said desorption, the surface is illuminated at each relevant point by pulses according to the optical near field principle. The optical near-field principle guarantees an analysis with a local resolution that provides unlimited diffraction. A hollow tip of the measuring probe that is used permits the unique allocation of the chemical analysis to a selected surface area. The highly symmetrical arrangement enables a high degree of transmission of the generated molecular ions.
    • 本发明涉及在样品表面的高分辨率图像通过扫描力显微镜的手段和局部高分辨率,化学性质(所有这一切都与此相关)样品表面的由装置测量记录组合的方法 通过质谱测定。 表面化学分析,受限制的表面积的激光解吸的基础上。 为了这个目的,该表面以脉冲形式在每个兴趣点使用光学近场原理照亮。 的位置分辨率的光学近场原理担保分析所有未衍射限制。 测量探头的中空尖端没有被用于允许该化学分析和所选择的表面区域之间明确的关联。 高度对称的布置允许该分子离子的良好的传输产生一样。
    • 5. 发明授权
    • INTER-ATOMIC MEASUREMENT TECHNIQUE
    • 原子间的测定方法
    • EP0839311B1
    • 2006-08-09
    • EP97921980.5
    • 1997-05-20
    • Ohara, Tetsuo
    • Ohara, Tetsuo
    • G12B21/00G01B7/00G01N27/00G11B9/00
    • G01Q10/06G11B9/1436Y10S977/851
    • A method of and apparatus for producing improved real-time continual nanometer scale positioning data of the location of sensing probe used with one of a scanning tunneling microscope, an atomic force microscope, or a capacitive or magnetic field-sensing system, for measuring the probe distance and the position relative to an atomic surface or other periodically undulating surface such as a grating or the like moving relatively with respect to the probe, and between which and the surface there exists a sensing field, through rapid oscillating of the probe under the control of sinusoidal voltages, and comparison of the phase and/or amplitude of the output sinusoidal voltages produce by current in the sensing field to provide positional signals indicative of the direction and distance off the apex of the nearest atom or undulation of the surface; and, where desired, feeding back such positional signals to control the relative movement of the probe and surface; and wherein improved operation is achieved through one or all of eliminating errors caused by phase delays between the sinusoidal voltage driving the probe and its actual oscillation position, particularly when near the probe natural frequency, thereby providing for increased speed, frequency response and reliability; preventing the possible crashing of the probe into the surface and other probe-to-surface gap control problems; providing for absolute positioning; and providing for improved single and multi-probe micromachined probe design particularly of monolithic crystal wafer construction.
    • 6. 发明公开
    • Integrated measuring instrument
    • IntegriertesMessgerät
    • EP1329686A2
    • 2003-07-23
    • EP03075156.4
    • 2003-01-20
    • FEI COMPANY
    • Muckenhirn, Sylvain G.
    • G01B7/34G12B21/00
    • G01Q30/02G01N21/4788G01Q40/02H01J37/244
    • A surface analyzing system including in one system both an integrating optical instrument, such as a scatterometer, and individual-feature-measuring instrument, such as a scanning probe microscope or a beam imaging system, for example, a scanning electron microscope. In a preferred embodiment, the two instruments are capable of characterizing a wafer held on a common stage. The stage may be movable over a predetermined displacement to allow the same area of the wafer to be characterized by a scatterometer at one position of the stage and to be characterized by the scanning probe microscope or beam imaging system. The scatterometer can rapidly measure wafers to indicate whether a problem exists, and the scanning probe microscope can perform detailed measurements on wafers flagged by the scatterometer.
    • 一种表面分析系统,包括一个系统,诸如散射仪的积分光学仪器和诸如扫描探针显微镜或束成像系统的单独特征测量仪器,例如扫描电子显微镜。 在优选实施例中,两个仪器能够表征保持在公共平台上的晶片。 舞台可以在预定的位移上移动,以允许晶片的相同面积由阶段的一个位置处的散射仪表征,并且由扫描探针显微镜或束成像系统表征。 散射仪可以快速测量晶片以指示是否存在问题,扫描探针显微镜可以对通过散射仪标记的晶片进行详细测量。