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1. 发明公开

EP3744865A1 CR-NI ALLOY AND SEAMLESS STEEL PIPE FORMED OF CR-NI ALLOY 审中-实审
公开(公告)号：EP3744865A1
公开(公告)日：2020-12-02
申请号：EP19744243.7
申请日：2019-01-17
申请人： NIPPON STEEL CORPORATION
发明人： TOMIO, Akiko , UEYAMA, Masaki , TOMIO, Yusaku
IPC分类号： C22C30/02 , C22F1/00 , C22F1/16
摘要： A Cr-Ni alloy having high yield strength and high resistance to sulfuric acid general corrosion at a high temperature of 250°C is provided. The Cr-Ni alloy has a chemical composition consisting of, in mass%, Si: 0.01 to 0.50%, Mn: 0.01 to 1.00%, Cr: 21.0 to 27.0%, Ni: 40.0 to less than 50.0%, Mo: 4.5 to less than 9.0%, W: 2.0 to 6.0%, Cu: more than 2.0% and not more than 6.0%, Co: 0.01 to 2.00%, one or two kinds selected from the group consisting of Ca and Mg: 0.001 to 0.010% in total, sol. Al: 0.005 to 0.200%, N: 0.01 to 0.20%, and the balance being Fe and impurities.
The dislocation density in the Cr-Ni alloy satisfies the following Formula (1): 8.00 × 10 14 ≤ ρ ≤ 2.50 × 10 15 + 1.40 × 10 14 × Cu + Co

2. 发明授权

EP2818575B1 CYLINDRICAL INDIUM SPUTTERING TARGET AND PROCESS FOR PRODUCING SAME 有权
公开(公告)号：EP2818575B1
公开(公告)日：2018-05-30
申请号：EP13831560.1
申请日：2013-01-31
申请人： JX Nippon Mining & Metals Corp.
发明人： ENDO,Yousuke , SUZUKI,Hideyuki
IPC分类号： C23C14/16 , C23C14/34 , C22F1/16 , H01J37/34
CPC分类号： H01J37/3426 , B21B1/46 , B21C23/00 , B21J5/002 , C22F1/16 , C23C14/16 , C23C14/3414 , H01J37/3423
摘要： Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

3. 发明公开

EP3312300A1 METHOD FOR MANUFACTURING MOLDED MATERIAL, MOLDED MATERIAL, WAVEFRONT CONTROL ELEMENT, AND DIFFRACTION GRATING 有权
标题翻译：制造模制材料的方法，模制材料，波前控制元件和衍射光栅
公开(公告)号：EP3312300A1
公开(公告)日：2018-04-25
申请号：EP16814288.3
申请日：2016-06-17
申请人： Tohoku University
发明人： Kato Hidemi , Yashiro Wataru
IPC分类号： C22C45/00 , C22C5/04 , C22C28/00 , C22C30/02 , C22F1/10 , C22F1/14 , C22F1/16 , G01N23/20 , C22F1/00
摘要： Provided is process for producing molded material by which a metallic glass material is molded at a lower viscosity coefficient in a relatively short period of time into the material with a structure having a precisely controlled shape and measuring not more than tens of micrometers; and also provided are the molded material, a wavefront control element and a diffraction grating. A heating step is performed to heat a supercooled metallic glass material or solid metallic glass material, at a temperature increase rate of 0.5 K/s or more, to a temperature which is equal to or higher than a temperature at which a supercooled liquid of the metallic glass material starts to crystallize. A molding step is performed, in the heating step, to subject the metallic glass material to transfer molding, for a period of time starting with the arrival at the glass transition temperature of the metallic glass material and lasting before the completion of the crystallization process of the supercooled liquid of the metallic glass material. For the production of the wavefront control element, the use of a concave-convex mold having periodic concavity-convexity is preferred. For the production of a G 2 diffraction grating for a neutron Talbot interferometer, the use of a Gd-based, Sm-based, Eu-based or Dy-based metallic glass material is preferred.
摘要翻译：本发明提供一种用于制造成型材料的方法，通过该成型材料，金属玻璃材料以较低的粘度系数在较短的时间内成型为具有精确控制的形状并测量为不大于几十微米的结构的材料; 还提供了模制材料，波前控制元件和衍射光栅。进行加热步骤以将过冷金属玻璃材料或固体金属玻璃材料以0.5K / s或更高的升温速率加热到等于或高于过冷却液体的过冷液体温度金属玻璃材料开始结晶。在加热步骤中，进行成型步骤以使金属玻璃材料经过一段时间的传递模塑，所述时间段从金属玻璃材料的玻璃化转变温度开始并且在完成结晶过程之前持续金属玻璃材料的过冷液体。为了制造波前控制元件，优选使用具有周期性凹凸的凹凸模具。为了制造用于中子Talbot干涉仪的G2衍射光栅，优选使用Gd基，Sm基，Eu基或Dy基金属玻璃材料。

4. 发明公开

EP3107683A4 LEAD-FREE SOLDER COMPOSITIONS 有权
公开(公告)号：EP3107683A4
公开(公告)日：2017-11-22
申请号：EP14883081
申请日：2014-02-20
申请人： HONEYWELL INT INC
发明人： LI JIANXING , PINTER MICHAEL R , JOHNSON VIKKI L
IPC分类号： B23K35/26 , B23K35/02 , C22C1/02 , C22C12/00 , C22F1/16
CPC分类号： B23K35/0227 , B23K35/26 , B23K35/264 , C22C1/02 , C22C12/00 , C22F1/16
摘要： A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

5. 发明公开

EP3187616A1 FABRICATION METHOD OF STRIPS AND SHEETS MADE OF ZN-CU-TI ALLOYS DESIGNED FOR BUILDING INDUSTRY 审中-公开
标题翻译：用于建筑业的ZN-CU-TI合金制成的条带和片材的制造方法
公开(公告)号：EP3187616A1
公开(公告)日：2017-07-05
申请号：EP15460143.9
申请日：2015-12-31
申请人： ZM Silesia S.A.
发明人： Napiora, Tomasz , Pawlicha, Stanislaw , Knych, Tadeusz , Mamala, Andrzej , Osuch, Piotr , Walkowicz, Monika , Gradkiewicz, Lukasz , Sokol, Radoslaw
IPC分类号： C22F1/16 , C22C18/02
CPC分类号： C22F1/165
摘要： A fabrication method of flat-rolled products designed for building industry, made of Zn-Cu-Ti alloy with a chemical composition in accordance with EN-988 standard, composed of at least two basic steps - continuous casting process of metal strip and non-integrated rolling process of finished product in form of sheets, wherein after casting step the metal strip with a thickness from 4 mm to 16 mm and width from 500 mm to 2000 mm is heated up to a temperature ranging from 240°C to 270°C before starting the rolling operation and is being rolled in at least five roll passes until the finished product is obtained. The reduction ratios in the last four roll passes of the rolling process are > 40 % and
The Zn-Cu-Ti contains from 0,08 wt. % to 0,24 wt. % Cu, from 0,06 wt. % to 0,12 wt. % Ti, not more than 0,015 wt. % Al and rest Zn and tramp elements such as Cd, Fe, Pb and Sn.
The finished product is susceptible to plastic strain in low temperatures ≥ +10 °C.
摘要翻译：一种用于建筑行业的平轧产品的制造方法，由化学成分符合EN-988标准的Zn-Cu-Ti合金制成，至少由两个基本步骤组成 - 连续铸造金属带材和非金属带材，板材成品的整体轧制工艺，其中，在铸造步骤之后，将厚度为4mm至16mm且宽度为500mm至2000mm的金属带材加热至240℃至270℃的温度在开始轧制操作之前并且在至少五次轧制道次中进行轧制直到获得最终产品。轧制过程的最后四个轧制道次中的压下率大于40％且小于50％，并且轧制率不小于100mm / min。最后一次轧制后的板材温度至少为100°C（≥100°C）。 Zn-Cu-Ti含有0.08wt。％至0.24wt。％Cu，0.06wt。％至0.12wt。％Ti，不超过0.015wt。％Al，剩余的Zn和不定形元素如Cd，Fe，Pb和Sn。成品在≥+ 10°C的低温下易受塑性应变影响。

6. 发明公开

EP2960355A4 SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR 有权转让
标题翻译：溅射及其制造方法
公开(公告)号：EP2960355A4
公开(公告)日：2017-03-01
申请号：EP14754195
申请日：2014-02-25
申请人： MITSUBISHI MATERIALS CORP
发明人： ZHANG SHOUBIN , UMEMOTO KEITA
IPC分类号： C23C14/34 , B22F3/14 , B22F3/15 , C22C1/04 , C22C9/00 , C22C28/00 , C22F1/00 , C22F1/08 , C22F1/16
CPC分类号： H01J37/3429 , B22D7/005 , B22F1/0003 , B22F3/10 , B22F9/04 , B22F2201/01 , B22F2201/10 , B22F2201/20 , B22F2301/10 , B22F2304/10 , C22C1/0433 , C22C1/0483 , C22C9/00 , C22C28/00 , C22C30/00 , C22C30/06 , C22F1/00 , C22F1/08 , C22F1/16 , C23C14/14 , C23C14/3414
摘要： A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic% of Ga; 0.1 to 10.0 total atomic% of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.

7. 发明授权

EP2067869B1 PRECISION ALLOY 有权
标题翻译：精密合金
公开(公告)号：EP2067869B1
公开(公告)日：2017-03-01
申请号：EP07827802.5
申请日：2007-09-20
申请人： NEC Corporation
发明人： NOMURA, Masahiro
IPC分类号： C22C18/04 , C22F1/16 , C22C30/02 , C22C30/06
CPC分类号： C22C18/04 , C22C30/02 , C22C30/06 , C22F1/00 , C22F1/10

8. 发明公开

EP2960355A1 SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR 有权转让
标题翻译：突击队在赫尔辛基
公开(公告)号：EP2960355A1
公开(公告)日：2015-12-30
申请号：EP14754195.7
申请日：2014-02-25
申请人： Mitsubishi Materials Corporation
发明人： ZHANG Shoubin , UMEMOTO Keita
IPC分类号： C23C14/34 , B22F3/14 , B22F3/15 , C22C1/04 , C22C9/00 , C22F1/08 , C22C28/00 , C22F1/00 , C22F1/16
CPC分类号： H01J37/3429 , B22D7/005 , B22F1/0003 , B22F3/10 , B22F9/04 , B22F2201/01 , B22F2201/10 , B22F2201/20 , B22F2301/10 , B22F2304/10 , C22C1/0433 , C22C1/0483 , C22C9/00 , C22C28/00 , C22C30/00 , C22C30/06 , C22F1/00 , C22F1/08 , C22F1/16 , C23C14/14 , C23C14/3414
摘要： A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic% of Ga; 0.1 to 10.0 total atomic% of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.
摘要翻译：具有优异的机械加工性的溅射靶; 并且使得可以沉积包含Cu和Ga的化合物的膜作为主要成分。溅射靶包括：相对于溅射靶中的全部金属元素，为15.0〜50.0原子％的Ga; 选自Al，Zn，Sn，Ag和Mg中的一种或多种金属元素的总原子％为0.1〜10.0; 和Cu平衡以及不可避免的杂质。

9. 发明公开

EP2067869A4 PRECISION ALLOY 有权
标题翻译：精密合金
公开(公告)号：EP2067869A4
公开(公告)日：2015-09-09
申请号：EP07827802
申请日：2007-09-20
申请人： NEC CORP
发明人： NOMURA MASAHIRO
IPC分类号： C22C18/04 , C22C30/02 , C22C30/06 , C22F1/16
CPC分类号： C22C18/04 , C22C30/02 , C22C30/06 , C22F1/00 , C22F1/10

10. 发明公开

EP2772564A4 INDIUM SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：铟溅射靶材及其制造方法
公开(公告)号：EP2772564A4
公开(公告)日：2015-08-19
申请号：EP12824758
申请日：2012-08-15
申请人： JX NIPPON MINING & METALS CORP
发明人： ENDO YOUSUKE , SAKAMOTO MASARU
IPC分类号： C23C14/34 , C22F1/16 , H01J37/34
CPC分类号： C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3426 , H01J37/3491

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