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2. 发明公开

EP0927777A1 Semiconductor crystal, and method and apparatus of production 有权
标题翻译： Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
公开(公告)号：EP0927777A1
公开(公告)日：1999-07-07
申请号：EP98124552.5
申请日：1998-12-22
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hashio, Katsushi c/o Sumitomo Elect.Indust., Ltd. , Sawada, Shin-ichi c/o Sumitomo Elect.Indust., Ltd. , Tatsumi, Masami c/o Sumitomo Elect.Indust., Ltd.
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor (1) having an open end at both end sides, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater (3) arranged around the reactor (1) in the atmosphere, a flange (9) attached at the open end to seal the reactor (1), and a crucible (2) mounted in the reactor (1) to store material of a semiconductor crystal. The material stored in the crucible (2) is heated and melted to form material melt (60). The material melt is solidified to grow a semiconductor crystal (50).
摘要翻译：提供了一种以低成本提供大半导体晶体的装置和方法。制造半导体晶体的装置包括：反应器（1），其在两端具有开口端，由选自碳化硅，氮化硅，氮化铝和氧化铝中的任何一种材料形成，或由复合材料具有选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料的材料，并且在表面上形成防氧化或气密膜的基部，在大气中布置在反应器（1）周围的kanthal加热器（3），连接在开口端以密封反应器（1）的凸缘（9）和安装在反应器（1）中的坩埚（2） 1）存储半导体晶体的材料。储存在坩埚（2）中的材料被加热熔化以形成材料熔体（60）。材料熔体被固化以生长半导体晶体（50）。

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