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1. 发明授权

EP0996942B1 AMORPHOUS MAGNETOSTRICTIVE ALLOY AND AN ELECTRONIC ARTICLE SURVEILLANCE SYSTEM EMPLOYING SAME 失效
标题翻译：非晶磁致伸缩合金和电子产品监控系统下，使用这种合金
公开(公告)号：EP0996942B1
公开(公告)日：2005-09-07
申请号：EP98939591.8
申请日：1998-07-01
申请人： Vacuumschmelze GmbH & Co. KG
发明人： HERZER, Giselher
IPC分类号： G08B13/24
CPC分类号： G08B13/2408 , G08B13/244 , G08B13/2442 , G08B13/2488 , Y10S29/095 , Y10S148/003
摘要： A resonator for use in a marker in a magnetomechanical electronic article surveillance system is composed of an amorphous magnetostrictive alloy containing iron, cobalt, nickel, silicon and boron in quantities for giving the resonator a quality Q which is between about 100 and 600. When the resonator is excited to resonate by a signal emitted by the transmitter in the surveillance system, it produces a signal at a mechanical resonant frequency fr which can be detected by the receiver of the detection system. Due to the resonator having a quality Q in the above range, a signal is produced having an amplitude at approximately 1ms after excitation which is no more than 15 dB below an amplitude of the signal immediately after excitation and having an amplitude at approximately 7 ms after excitation which is at least 15 dB below said amplitude at 1 ms after excitation.

2. 发明授权

EP0541373B2 Method of manufacturing p-type compound semiconductor 失效
标题翻译：一种生产P型化合物半导体的过程
公开(公告)号：EP0541373B2
公开(公告)日：2004-03-31
申请号：EP92310132.3
申请日：1992-11-05
申请人： Nichia Corporation
发明人： Nakamura, Shuji, c/o Nichia Chemical Ind. Ltd. , Iwasa, Naruhito, c/o Nichia Chemical Ind. Ltd. , Senoh, Masayuki, c/o Nichia Chemical Ind. Ltd.
IPC分类号： H01L33/00 , H01L21/324
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909

3. 发明公开

EP0996942A1 AMORPHOUS MAGNETOSTRICTIVE ALLOY AND AN ELECTRONIC ARTICLE SURVEILLANCE SYSTEM EMPLOYING SAME 失效
标题翻译：非晶磁致伸缩合金和电子产品监控系统下，使用这种合金
公开(公告)号：EP0996942A1
公开(公告)日：2000-05-03
申请号：EP98939591.8
申请日：1998-07-01
申请人： Vacuumschmelze GmbH
发明人： HERZER, Giselher
IPC分类号： G08B13/24
CPC分类号： G08B13/2408 , G08B13/244 , G08B13/2442 , G08B13/2488 , Y10S29/095 , Y10S148/003
摘要： A resonator for use in a marker in a magnetomechanical electronic article surveillance system is composed of an amorphous magnetostrictive alloy containing iron, cobalt, nickel, silicon and boron in quantities for giving the resonator a quality Q which is between about 100 and 600. When the resonator is excited to resonate by a signal emitted by the transmitter in the surveillance system, it produces a signal at a mechanical resonant frequency fr which can be detected by the receiver of the detection system. Due to the resonator having a quality Q in the above range, a signal is produced having an amplitude at approximately 1ms after excitation which is no more than 15 dB below an amplitude of the signal immediately after excitation and having an amplitude at approximately 7 ms after excitation which is at least 15 dB below said amplitude at 1 ms after excitation.

4. 发明公开

EP0960408A1 MAGNETOSTRICTIVE ELEMENT HAVING OPTIMIZED BIAS-FIELD-DEPENDENT RESONANT FREQUENCY CHARACTERISTIC 失效
标题翻译： WITH IMPROVED FIELD偏振相关谐振频率特性磁致伸缩元件
公开(公告)号：EP0960408A1
公开(公告)日：1999-12-01
申请号：EP98904524.0
申请日：1998-02-04
申请人： Sensormatic Electronics Corporation
发明人： LIAN, Ming-Ren , LIU, Nen-Chin , COFFEY, Kevin, R. , COPELAND, Richard , HO, Wing , O'HANDLEY, Robert, C.
IPC分类号： G01V3 , G01V15 , G08B13
CPC分类号： G08B13/2408 , G08B13/244 , G08B13/2442 , Y10S148/003
摘要： A magnetostrictive element for use in an magnetomechanical marker has a resonant frequency characteristic that is at a minimum at a bias field level corresponding to the operation point of the magnetomechancial marker. The magnetostrictive element has a magnetomechanical coupling factor k in the range 0.28 to 0.4 at the operating point (26). The magnetostrictive element is formed by applying current-annealing to an iron-nickel-cobalt based amorphous metal ribbon, or by cross-field annealing an iron-nickel-cobalt alloy that includes a few percent chromium and/or niobium.

5. 发明授权

EP0541373B1 Method of manufacturing p-type compound semiconductor 失效
标题翻译：一种生产P型化合物半导体的过程
公开(公告)号：EP0541373B1
公开(公告)日：1998-09-30
申请号：EP92310132.3
申请日：1992-11-05
申请人： NICHIA CHEMICAL INDUSTRIES, LTD.
发明人： Nakamura, Shuji, c/o Nichia Chemical Ind. Ltd. , Iwasa, Naruhito, c/o Nichia Chemical Ind. Ltd. , Senoh, Masayuki, c/o Nichia Chemical Ind. Ltd.
IPC分类号： H01L33/00 , H01L21/324
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909

6. 发明公开

EP0780891A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译： HERSTELLUNGSVERFAHRENFÜRHALBLEITERANORDNUNG
公开(公告)号：EP0780891A1
公开(公告)日：1997-06-25
申请号：EP96922271.0
申请日：1996-07-09
申请人： ROHM CO., LTD.
发明人： SAKAMOTO, Kazuhisa, Rohm Co., Ltd.
IPC分类号： H01L21/322
CPC分类号： H01L29/66295 , H01L21/263 , Y10S148/003 , Y10S148/004 , Y10S148/08 , Y10S148/09 , Y10S148/092
摘要： Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein, characterized in that said semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minutes, wherein rapid heating-up, e.g. raising temperature to 550 to 850 °C within 10 minutes, is done in a process prior to that of carrying out of the radiation with a corpuscular beam. By doing so, there is provided a semiconductor device which is free from degradation in electrical characteristics such as current amplification factor and has an increased switching speed, even where crystal defects are created through the radiation of corpuscular beam such as an electron beam to shorten the carrier lifetime. Thus, the inventive semiconductor device is satisfied by both requirements of switching speed and electrical characteristic.
摘要翻译：公开了一种制造半导体器件的方法，其中将粒子束辐射到半导体衬底以在其中产生晶体缺陷，其特征在于，对所述半导体衬底进行热处理，例如， 1秒至60分钟，其中快速加热，例如，在10分钟内将温度提高到550〜850℃，在用红细胞束进行辐射之前的过程中进行。通过这样做，提供了一种半导体器件，其即使在通过诸如电子束的粒子束的辐射产生晶体缺陷的情况下，也不会有诸如电流放大系数的电特性的劣化并具有增加的切换速度，从而缩短载体寿命。因此，本发明的半导体器件通过开关速度和电气特性的要求得到满足。

7. 发明公开

EP0690425A1 Magnetomechanical marker with the amorphous element annealed in the presence of a transverse magnetic field and method of making same 有权转让
标题翻译：具有横向磁场的存在的磁机械标记退火及其无定形部分和制造方法
公开(公告)号：EP0690425A1
公开(公告)日：1996-01-03
申请号：EP95107884.9
申请日：1995-05-24
申请人： Sensormatic Electronics Corporation
发明人： Cantey, Jimmy , Liu, Nen-chin , Lian, Ming-Ren
IPC分类号： G08B13/24
CPC分类号： G08B13/2408 , G01R33/18 , G01V3/104 , G01V15/00 , G08B13/2434 , G08B13/2437 , G08B13/244 , G08B13/2442 , G08B13/2488 , H01F1/15316 , H01F1/15341 , H01L41/20 , Y10S29/025 , Y10S29/049 , Y10S29/095 , Y10S148/003
摘要： A ribbon-shaped strip of an amorphous magnetic alloy is heat treated, while applying a transverse saturating magnetic field. The treated strip is used in a marker for a pulsed-interrogation electronic article surveillance system. A preferred material for the strip is formed of iron, cobalt, silicon and boron with the proportion of cobalt exceeding 30% by atomic percent.
摘要翻译：的标记在形成的Fe-Co合金contg的磁机械电子物品监视（EAS）系统的无定形磁限制条带（12）的步骤包括使用。至少30原子％有限公司因此要求保护的是：。（ⅰ）使该标记物，其包括安装提供直流偏磁场，以便DASS模具元件具有谐振频率的偏置元件附近的条带（16）的方法; （ii）向使用上述包括生成的手段EAS系统在交替的E. M. 以上在询问区和标记询问线圈的包括场固定到在通过所述区文章通道，地连同偏置元件。检测器检测在交变磁场的元件的共振。

8. 发明授权

EP0308814B1 Modification of interfacial fields between dielectrics and semiconductors 失效
标题翻译：电介质和半导体之间的界面场的修改
公开(公告)号：EP0308814B1
公开(公告)日：1993-01-27
申请号：EP88115112.0
申请日：1988-09-15
申请人： NATIONAL SEMICONDUCTOR CORPORATION
发明人： Aronowitz, Sheldon , Anand, Kranti
IPC分类号： H01L21/31 , H01L29/62 , H01L29/78
CPC分类号： H01L21/28185 , H01L21/28211 , H01L21/31155 , H01L29/51 , H01L29/517 , Y10S148/003 , Y10S148/024 , Y10S148/06

9. 发明授权

EP0260473B1 Method of forming silicon oxynitride films on silicon substrates 失效
标题翻译：硅衬底上形成硅氧烷膜的方法
公开(公告)号：EP0260473B1
公开(公告)日：1991-10-23
申请号：EP87112149.7
申请日：1987-08-21
申请人： International Business Machines Corporation
发明人： Abernathey, John Robert , Johnson, David Louis , Pan, Pai-Hung , Paquette, Charles Arthur
IPC分类号： H01L21/265 , H01L21/314
CPC分类号： H01L21/28185 , H01L21/2652 , H01L21/28202 , H01L21/3145 , H01L29/518 , Y10S148/003 , Y10S148/013 , Y10S148/014 , Y10S148/114

10. 发明公开

EP0390608A2 Method for forming semiconductor thin-film and resulting semiconductor thin-film 失效
标题翻译：一种用于制造半导体薄膜和半导体薄膜过程中产生与其。
公开(公告)号：EP0390608A2
公开(公告)日：1990-10-03
申请号：EP90303480.9
申请日：1990-03-30
申请人： CANON KABUSHIKI KAISHA
发明人： Yonehara, Takao
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/2022 , Y10S117/913 , Y10S148/003
摘要： Polycrystalline silicon thin-films having a large grain size are formed by preparing a substrate of amorphous surface comprising first regions containing tin atoms at a higher content and second regions containing tin atoms at a lower content or not substantially containing them, and then heat-treating the substrate to grow crystal grains from crystal nuclei formed only in the first regions.
摘要翻译：具有大晶粒尺寸的多晶硅薄膜通过制备无定形表面包括以较高的含量含有锡原子以较低的含量含有锡原子或第一区域和第二区域基本上不的基板含有它们的形成，然后进行热处理基板从仅在第一区域中形成晶核生长的晶粒。

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