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1. 发明授权

EP0937335B1 AN ARRANGEMENT FOR REDUCING AND STABILIZING THE AMPLIFICATION OF A DARLINGTON-COUPLED OUTPUT STAGE 失效
标题翻译：安排降低并稳定达林顿输出级的加固
公开(公告)号：EP0937335B1
公开(公告)日：2001-05-30
申请号：EP97912622.4
申请日：1997-11-06
申请人： TELEFONAKTIEBOLAGET L M ERICSSON (publ)
发明人： ERIKSSON, Hans
IPC分类号： H03F3/21 , H03G3/30
CPC分类号： H03F3/3435 , H03F1/302
摘要： In order to stabilize the idle current and the bandwidth of an output stage, the output stage is adapted, within an interval of currents, to continuously increase its current amplification with increasing input current from a first amplification value to a second amplification value.

2. 发明公开

EP0572377A1 DARLINGTON-TRANSISTORSCHALTUNG 失效
标题翻译：达林顿TRANSISTORSCHALTUNG。
公开(公告)号：EP0572377A1
公开(公告)日：1993-12-08
申请号：EP90911279.0
申请日：1990-07-27
申请人： ROBERT BOSCH GMBH
发明人： TOPP, Rainer
IPC分类号： H03F1 , H03F3
CPC分类号： H03F3/3435 , H03F1/52
摘要： La présente invention se rapporte à un montage à transistors de Darlington équipé d'un transistor de puissance T1 et d'un transistor d'attaque T2 dans une puce fabriquée en technique planaire. Une métallisation d'électrode de recouvrement (18) est prévue au-dessus de la zone de charge spatiale qui se forme dans la zone de jonction pn sur le dessus de la puce entre base et collecteur. En outre est prévu un diviseur de tension avec une liaison vers la métallisation d'électrode de recouvrement (18), le potentiel électrique de la métallisation d'électrode de recouvrement (18) permettant de régler la tension de claquage de transistor UCE, ce potentiel étant déterminé par le réglage du diviseur de tension. Selon l'invention, ce potentiel de réglage, et par conséquent la tension de claquage UCE, sont réglés par l'intermédiaire d'une tension de référence supplémentaire, ce qui permet d'obtenir une stabilisation de la tension de claquage et en particulier une large indépendance vis-à-vis des effets de température, des dérives en longue durée et des opérations de montage.

3. 发明授权

EP0014506B1 Filtre passe-bas pour signaux basse fréquence 失效
标题翻译：低通滤波器用于低频信号
公开(公告)号：EP0014506B1
公开(公告)日：1983-08-03
申请号：EP80200080.2
申请日：1980-01-29
申请人： R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: , Philips Electronics N.V.
发明人： Kaire, Jean-Claude , Six, Jean-Claude
IPC分类号： H03H11/12 , H03H19/00
CPC分类号： H03H11/1213 , H03F3/3435 , H03H11/12 , H03H11/1217 , H03H19/00

4. 发明授权

EP2656387B1 COMPLEMENTARY DARLINGTON EMITTER FOLLOWER WITH IMPROVED SWITCHING SPEED AND IMPROVED CROSS-OVER CONTROL AND INCREASED OUTPUT VOLTAGE 有权
标题翻译：具有改进的开关速度和改进的混合控制和更高的输出电压达林顿互补射极跟随器
公开(公告)号：EP2656387B1
公开(公告)日：2014-07-30
申请号：EP11824335.1
申请日：2011-12-19
申请人： Diodes Zetex Semiconductors Limited
发明人： CASEY, David, Neil
IPC分类号： H01L27/082 , H03F3/343 , H03K17/04 , H01L29/10 , H01L29/66
CPC分类号： C12M21/02 , C12M27/20 , C12M29/06 , C12M31/08 , H01L27/0823 , H01L29/1004 , H01L29/66272 , H01L2924/0002 , H03F3/3435 , H03K17/04113 , H03K17/615 , H01L2924/00

5. 发明公开

EP2656387A1 COMPLEMENTARY DARLINGTON EMITTER FOLLOWER WITH IMPROVED SWITCHING SPEED AND IMPROVED CROSS-OVER CONTROL AND INCREASED OUTPUT VOLTAGE 有权
标题翻译：具有改进的开关速度和改进的混合控制和更高的输出电压达林顿互补射极跟随器
公开(公告)号：EP2656387A1
公开(公告)日：2013-10-30
申请号：EP11824335.1
申请日：2011-12-19
申请人： Diodes Zetex Semiconductors Limited
发明人： CASEY, David, Neil
IPC分类号： H01L27/082 , H03F3/343 , H03K17/04 , H01L29/10 , H01L29/66
CPC分类号： C12M21/02 , C12M27/20 , C12M29/06 , C12M31/08 , H01L27/0823 , H01L29/1004 , H01L29/66272 , H01L2924/0002 , H03F3/3435 , H03K17/04113 , H03K17/615 , H01L2924/00
摘要： In one embodiment, an apparatus includes a first transistor where the base of the first transistor is coupled to an input node. A second transistor is provided where the emitter of the first transistor is coupled to the base of the second transistor and the emitter of the second transistor is coupled to an output node. A third transistor is provided where the base of the third transistor is coupled to the input node. A fourth transistor is provided where the emitter of the third transistor is coupled to the base of the fourth transistor and the emitter of the fourth transistor is coupled to the output node and the base of the second transistor is coupled to the base of the fourth transistor. The base of the second transistor is coupled to the base of the fourth transistor through a shorting link.

6. 发明公开

EP1469607A3 Handset radiofrequency front end module in fine pitch quad flat no lead (FQFP-N) package 审中-公开
标题翻译：在扁平的方形外壳听筒具有细间距的射频前端模块
公开(公告)号：EP1469607A3
公开(公告)日：2006-05-31
申请号：EP04252173.2
申请日：2004-04-14
申请人： M/A-COM, INC.
发明人： Winslow, Thomas Aaron , Giacchino, Richard John , Weigand, Christopher Dirk
IPC分类号： H04B1/16 , H04B1/12 , H03H7/46
CPC分类号： H03F3/3432 , H03F1/30 , H03F1/34 , H03F3/195 , H03F3/211 , H03F3/3435 , H03F3/50 , H03F3/72 , H03F2200/111 , H03F2200/153 , H03F2200/18 , H03F2200/451 , H04B1/006 , H04B1/0458 , H04B1/12 , H04B1/48
摘要： An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module (100) including a power amplifier (106, 108), a matching circuit (110, 112) coupled to the power amplifier (106, 108), and a filter (114, 118) coupled to the matching circuit (110, 112), such that a signal received by the power amplifier (106, 108) is transmitted to the filter through the matching circuit (110, 112). The telecommunications module (100) provides quad-band capability in a compact design.

7. 发明公开

EP0586038A1 Local feedback stabilized emitter follower cascade 失效
标题翻译： Mit lokalerRückkopplungstableisierte Emitterfolgerkaskade。
公开(公告)号：EP0586038A1
公开(公告)日：1994-03-09
申请号：EP93302569.4
申请日：1993-04-01
申请人： NATIONAL SEMICONDUCTOR CORPORATION
发明人： Maida, Michael X.
IPC分类号： H03F3/343 , H03F3/50
CPC分类号： H03F3/50 , H03F3/3435
摘要： A multi-stage buffer circuit comprises a cascade of emitter-follower transistors (24,14,15) of which the last two stages may be connected as a Darlington pair. To reduce instability when the circuit drives a capacitive load, a complementary transistor (28) is connected to act as a current source for the driver transistor (14) of the Darlington pair and to provide negative feedback around it.
摘要翻译：多级缓冲电路包括级联的发射极跟随器晶体管（24,14,15），其最后两级可以作为达林顿对连接。为了减少当电路驱动电容性负载时的不稳定性，互补晶体管（28）被连接起来用作达林顿对的驱动晶体管（14）的电流源，并在其周围提供负反馈。

8. 发明公开

EP0379984A2 Feed forward Darlington circuit with reduced NPN reverse beta sensitivity 失效
标题翻译：达芬奇
公开(公告)号：EP0379984A2
公开(公告)日：1990-08-01
申请号：EP90101063.7
申请日：1990-01-19
申请人： NATIONAL SEMICONDUCTOR CORPORATION
发明人： Wright, Michael E.
IPC分类号： H03F3/343 , H03K17/615 , H03F1/32
CPC分类号： H03F3/3435
摘要： A Darlington output stage is shown in which the saturation voltage is reduced to the level of a single common emitter output transistor (13). The circuit includes a lateral feed-forward transistor (21) that bridges the driver transistor (14). A resistor (20) is included to ensure that the driver transistor (14) is turned off when the output transistor (13) saturates. An IC version of the circuit is set forth in detail.
摘要翻译：示出了达林顿输出级，其中饱和电压降低到单个公共发射极输出晶体管（13）的电平。电路包括桥接驱动晶体管（14）的横向前馈晶体管（21）。包括电阻器（20）以确保当输出晶体管（13）饱和时驱动晶体管（14）截止。电路的IC版本详细阐述。

9. 发明授权

EP0156411B1 Darlington transistor arrangement 失效
标题翻译：达林顿晶体管布置
公开(公告)号：EP0156411B1
公开(公告)日：1990-01-31
申请号：EP85200245.0
申请日：1985-02-25
申请人： Philips Electronics N.V.
发明人： Van Tuijl, Adrianus Johannes Maria
IPC分类号： H03F1/32
CPC分类号： H03F3/3066 , H03F3/3435

10. 发明公开

EP0237933A2 Semiconductor device having Darlington-connected transistor circuit 失效
标题翻译：具有达林顿晶体管电路的半导体器件。
公开(公告)号：EP0237933A2
公开(公告)日：1987-09-23
申请号：EP87103476.5
申请日：1987-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tani, Keizo c/o Patent Division , Nakao, Junichi c/o Patent Division , Kotani, Eiji c/o Patent Division
IPC分类号： H03F1/32 , H03F3/343 , H03K17/04 , H01L27/08
CPC分类号： H03F1/32 , H03F3/3435
摘要： An additional p-n junction diode (D1), having a forward bias voltage (V F ) smaller than a forward bias voltage (V BEF ) between the base and emitter of first-stage specific transistor (TR1) of 3-stage Darlington-connected npn transistors (TR1 to TR3), is electrically connected in parallel between a p-type base layer and an n-type collector layer of the-specific transistor (TR1). The polarities of the p-type and n-type layers of the diode (D1) are respectively the same as those of the parallel-connected p-type base and n-type collector layers of the specific transistor (TR1).

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