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1. 发明公开

EP2929535A1 RESISTANCE REGLABLE 有权转让
标题翻译： VARISATOR
公开(公告)号：EP2929535A1
公开(公告)日：2015-10-14
申请号：EP13801586.2
申请日：2013-12-06
申请人： Thales , CNRS (Centre National de la Recherche Scientifique)
发明人： BRIATICO, Javier , VILLEGAS, Javier , BERNARD, Rozenn
IPC分类号： G11C11/22 , G11C11/44 , G11C11/54 , G11C11/56 , G11C13/00 , H01L39/22 , H01L27/18
CPC分类号： H01C7/10 , G11C11/22 , G11C11/44 , G11C11/54 , G11C11/5657 , G11C13/0002 , G11C2213/52 , H01L39/126 , H01L39/22 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147
摘要： The invention relates to a memory effect varistor comprising a multilayer containing a superconductive material (2) extending along an axis (x), a ferroelectric material (3) and a conductive third material (5). The varistor comprises a means (7) for controlling a voltage allowing an electrical field to be generated between the superconductive material (2) and the conductive material (5) allowing the polarisation direction of the ferroelectric second material to be modified. The varistor furthermore comprises an electrical insulator (6) arranged between the ferroelectric material (3) and the conductive material (5), the thickness of the insulator (6) varying along a direction parallel to the x-axis so as to make the electric field applied between the first layer (2) and the third layer (5) vary.
摘要翻译：电可调节记忆效应电阻器包括包括沿着轴延伸的超导材料，铁电材料和导电第三材料的叠层。可调电阻器包括用于控制电压的装置，允许在超导材料和导电材料之间产生电场，从而允许改变铁电第二材料的偏振方向。可调电阻器还包括放置在铁电材料和导电材料之间的电绝缘材料，绝缘材料的厚度在平行于轴线的方向上变化，以便引起施加在第一层和第二层之间的电场的变化第三层。

2. 发明公开

EP1544926A3 Superconducting thin film device comprising superconducting oxide multilayer interconnections and method for fabricating the same 失效
标题翻译：包含超导氧化物多层互连的超导薄膜器件及其制造方法
公开(公告)号：EP1544926A3
公开(公告)日：2005-07-20
申请号：EP05005034.3
申请日：1993-07-27
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Mukaida, Masashi , Miyazawa, Shintaro , Kobayashi, Junya
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2461 , H01L39/22 , H01L39/225 , H01L39/2422 , H01L39/2464 , H01L39/2496 , Y10S505/702 , Y10S505/704 , Y10S505/729
摘要： A superconducting thin film device comprises: a substrate (201); a thin film layer (202) provided on the substrate (201); a first superconducting thin film layer (203) provided as a lower intergrated circuit on the substrate; an interlayer insulator (205) provided on the lower integrated circuit; and a second superconducting thin film layer (206) provided as an upper integrated circuit on the interlayer insulator, an interlayer wiring (204) provided on the thin film layer (202) and being laterally adjacent to the lower and upper intergrated circuit; wherein the first and second superconducting thin film layer and the interlayer wiring are composed of LnBa2Cu3Ox wherein Ln represents yttrium or a lanthanide and x satisfies 6 the first and second superconducting thin film layer is c-axis oriented, and the interlayer wiring is a-axis oriented.
摘要翻译：一种超导薄膜器件包括：衬底（201）; 设置在所述基板（201）上的薄膜层（202）; 第一超导薄膜层（203），所述第一超导薄膜层（203）被设置为所述衬底上的下部集成电路; 设置在下集成电路上的层间绝缘体（205）和设置在所述层间绝缘体上作为上部集成电路的第二超导薄膜层（206），设置在所述薄膜层（202）上并与所述下部和上部集成电路横向相邻的层间布线（204）其中所述第一超导薄膜层和所述第二超导薄膜层以及所述层间布线由LnBa2Cu3Ox组成，其中Ln表示钇或镧系元素，并且x满足6

3. 发明公开

EP0404405A3 Superconducting device 失效
标题翻译：超级设备
公开(公告)号：EP0404405A3
公开(公告)日：1991-05-08
申请号：EP90306272.7
申请日：1990-06-08
申请人： IMPERIAL CHEMICAL INDUSTRIES PLC
发明人： Gough, Colin Edward , Keene, Mark Nicholas
IPC分类号： H01L39/22
CPC分类号： H01L39/22
摘要： A device which comprises a superconductor having a low critical temperature which may be 20K or below in contact with a superconductor having a high critical temperature which may be 77K or above. The superconductors may respectively be of the metal or alloy type and of the ceramic oxide type, and the device may be a SQUID.
摘要翻译：一种包括具有低临界温度的超导体的器件，该超导体可以具有与具有77K以上的高临界温度的超导体接触的20K以下。超导体可以分别是金属或合金类型和陶瓷氧化物类型，并且该器件可以是SQUID。

4. 发明公开

EP0371462A3 Oxide superconducting device 失效
标题翻译：氧化物超导装置
公开(公告)号：EP0371462A3
公开(公告)日：1990-09-26
申请号：EP89121945.3
申请日：1989-11-28
申请人： HITACHI, LTD.
发明人： Hasegawa, Haruhiro Hitachi Daini Kyoshinryo, 1-3 , Aida, Toshiyuki , Nishino, Toshikazu , Hatano, Mutsuko , Nakane, Hideaki , Fukazawa, Tokuumi
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/22 , H01L39/228
摘要： An oxide superconducting device has a junction structure composed of at least one oxide superconductor (2, 3) and at least one insulator (1) in which carriers have been generated. As the insulator (1) in which carriers have been generated, there can be used, for example, SrTiO₃ doped with Nb. When the device is used, rectifying characteristics can be attained in the junction described above.

5. 发明公开

EP2253028A4 PROXIMITY JOSEPHSON SENSOR 审中-公开
标题翻译： JOSEPHSON接近传感器
公开(公告)号：EP2253028A4
公开(公告)日：2013-05-01
申请号：EP09711446
申请日：2009-02-13
申请人： AALTO KORKEAKOULUSAEAETIOE
发明人： GIAZIOTTO FRANCESCO , HEIKKILAE TERO , PEPE GIAMPIERO , HELISTOE PANU , LUUKANEN ARTTU
IPC分类号： H01L39/22 , G01J5/10 , G01J5/20
CPC分类号： G01J5/20 , H01L39/22

6. 发明公开

EP1544926A2 Superconducting thin film device comprising superconducting oxide multilayer interconnections and method for fabricating the same 失效
标题翻译：超导具有多层布线氧化物超导体及其制造方法的薄膜器件
公开(公告)号：EP1544926A2
公开(公告)日：2005-06-22
申请号：EP05005034.3
申请日：1993-07-27
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Mukaida, Masashi , Miyazawa, Shintaro , Kobayashi, Junya
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2461 , H01L39/22 , H01L39/225 , H01L39/2422 , H01L39/2464 , H01L39/2496 , Y10S505/702 , Y10S505/704 , Y10S505/729
摘要： A super conducting thin film device comprises.

a substrate (201);
a thin film layer (202) provided on the substrate (201);
a first superconducting thin film layer (203) provided as a lower intergrated cicuit on the substrate;
an interlayer insulator (205) provided on the lower integrated circuit; and
an interlayer wiring (204) provided on the thin film layer (202) and being laterally adjacent to the lower and upper intergrated circuit;
wherein
the first and second superconducting thin film layer and the interlayer wiring are composed of LnBa 2 Cu 3 O 1 wherein Ln represent yttrium wiring or a lanthanide and x satisfies 6
the first and second superconducting thin film layer is c-axis oriented, and
the interlayer wiring is a-axis oriented.
摘要翻译：的超导薄膜器件包括：基板（201）; 的薄膜层（202）在基板上设置（201）; 作为在基板上的下部集成电路应用提供的第一超导薄膜层（203）; 在层间绝缘体（205）设置在下部集成电路上; 并且在上部集成电路上的层间绝缘膜作为设置在薄膜层（202）和迟到反弹毗邻下部和上部集成电路应用上的第二超导薄膜层（206），在层间布线（204）; worin第一和第二超导薄膜层和中间层布线由LnBa2Cu3Ox worin LN darstellt钇或镧系元素，并且x SATIS的外资企业6

7. 发明授权

EP0371462B1 Oxide superconducting device 失效
标题翻译：氧化物超导器件
公开(公告)号：EP0371462B1
公开(公告)日：1995-07-12
申请号：EP89121945.3
申请日：1989-11-28
申请人： HITACHI, LTD.
发明人： Hasegawa, Haruhiro Hitachi Daini Kyoshinryo, 1-3 , Aida, Toshiyuki , Nishino, Toshikazu , Hatano, Mutsuko , Nakane, Hideaki , Fukazawa, Tokuumi
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/22 , H01L39/228

8. 发明公开

EP0109166A3 Superconducting tunnel junction devices and method of making them 失效
标题翻译：超级隧道连接装置及其制造方法
公开(公告)号：EP0109166A3
公开(公告)日：1986-10-01
申请号：EP83306047
申请日：1983-10-06
申请人： SPERRY CORPORATION
发明人： Kroger, Harry
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/22 , Y10S505/874
摘要： A superconducting tunnel junction device comprises superconducting electrodes 11 and 12 separated by a tunnelling barrier 10 of semiconducting material. According to the invention the tunnelling barrier is not uniform throughout its thickness, the middle portion 14 being treated to reduce the density of localized states, whereas the portions 15 adjacent to the superconducting electrodes are of untreated semiconductor. This enables a device of improved performance to be obtained. In the preferred embodiment described in the specification the superconducting electrodes 11 and 12 are of niobium and the treated portion 14 of the barrier layer is of amorphous silicon containing hydrogen, the untreated portions 15 being of pure amorphous silicon. Various other superconducting materials for the electrodes and semiconductors for the barriers are mentioned, together with other gaseous additives. The devices may be manufactured by deposition steps in vacuum and in inert gas at low pressures.
摘要翻译：具有超导电极的超导隧道结装置具有非均匀的非晶半导体材料阻挡层，其中当在含有氢的气体气氛的情况下沉积中心区域时，其中的中心区域的局部状态的密度降低以便使漏电流最小化，从而导致近似于理想的隧道结器件的改进的电流 - 电压特性。低漏电流使用均匀沉积的具有铌电极的氢化硅来提高约瑟夫森逻辑电路在隧道势垒上的利润，并提高S-I-S微波和毫米波长检测器和混频器的灵敏度。在优选实施例中，使用邻接电极的纯硅和氢化非晶硅芯，将铌的超导电极与三层阻挡层结合。在本实施例中，与现有技术的10mV相比，获得了在4.2K下高达28mV的Vm参数（次隙电阻和临界电流的乘积）。

9. 发明公开

EP2955494A1 A single-photon camera 审中-公开
标题翻译： Einzelphotonenkamera
公开(公告)号：EP2955494A1
公开(公告)日：2015-12-16
申请号：EP14172076.3
申请日：2014-06-12
申请人： Karlsruher Institut für Technologie
发明人： Pernice, Wolfram
IPC分类号： G01J1/02 , G01J1/04 , G02B6/42 , G01J1/42 , G01J1/44
CPC分类号： G02B6/4295 , B82Y20/00 , G01B11/272 , G01J1/0209 , G01J1/0252 , G01J1/0407 , G01J1/0425 , G01J1/0459 , G01J1/4228 , G01J2001/442 , G02B6/4206 , H01L27/14625 , H01L27/18 , H01L31/02327 , H01L31/18 , H01L39/22 , H01L39/24 , H04B10/70
摘要： The present invention relates to a nanophotonic device (112), comprising a transparent substrate (114), wherein at least four grating couplers (120) for receiving incident light are located on the substrate (114), wherein each of at least two of the grating couplers (120) are optically coupled to a superconducting stripe (124) of a superconducting single-photon detector (126), while each of at least two of the other grating couplers (120) constitute an optical reference port (142), wherein an optical coupling (144) is provided between at least two optical reference ports (142).
The present invention further relates to a single-photon camera which comprises a housing (168), wherein the housing (168) comprises a single-photon detector chip (162) with at least one nanophotonic device (112), a method for manufacturing the nanophotonic device (112), and a method for aligning an optical fiber array (138) to the nanophotonic device (112).
摘要翻译：本发明涉及一种包括透明衬底（114）的纳米光子器件（112），其中用于接收入射光的至少四个光栅耦合器（120）位于衬底（114）上，其中，至少两个光栅耦合器（120）光耦合到超导单光子检测器（126）的超导条（124），而至少两个光栅耦合器（120）中的每一个构成光学参考端口（142），其中在至少两个光学参考端口（142）之间提供光耦合（144）。本发明还涉及一种包括壳体（168）的单光子照相机，其中壳体（168）包括具有至少一个纳米光子装置（112）的单光子检测器芯片（162），用于制造纳米光子器件（112）和用于将光纤阵列（138）对准到纳米光子器件（112）的方法。

10. 发明公开

EP2619813A1 DETECTOR OF SINGLE MICROWAVE PHOTONS PROPAGATING IN A GUIDE 有权转让
标题翻译：信号检测器处于领先扩频单光子微波
公开(公告)号：EP2619813A1
公开(公告)日：2013-07-31
申请号：EP11826461.3
申请日：2011-09-20
申请人： Aalto-Korkeakoulusäätiö
发明人： MÖTTÖNEN, Mikko , PEKOLA, Jukka
IPC分类号： H01L39/02 , G01K7/00
CPC分类号： G01J1/44 , B82Y10/00 , B82Y15/00 , G01J1/42 , G01J5/20 , G06N99/002 , H01L39/22
摘要： The present invention introduces a detector that is able to detect single microwave photons propagating in a waveguide. The waveguide of the invention is lowered to a temperature where it becomes superconductive. Disposed between a middle wire and a ground plane of the waveguide is a very small piece of a desired normal metal, whereby so-called SN contacts are formed between these materials. A separate reflection measurement circuit is coupled to the normal metal piece. When the impedance of the waveguide is matched to the impedance of the normal metal piece as well as possible, a photon propagating in the waveguide is most likely absorbed in the normal metal. The absorption slightly raises the temperature of the piece, which further changes the impedance observed in a so-called SIN junction between the reflection measurement circuit and the piece. The changed amplitude and phase are detectable at the outlet obtained from a mixer of the reflection measurement circuit, whereby a single absorbed photon can be detected. In principle, the present method and device enable quantum calculation in view of future applications.

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