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1. 发明公开

EP2889682A1 Display device with redundant transistor structure 有权转让
标题翻译： Anzeigevorrichtung mit redundancyanter Transistorstruktur
公开(公告)号：EP2889682A1
公开(公告)日：2015-07-01
申请号：EP14174907.7
申请日：2014-06-30
申请人： LG Display Co., Ltd.
发明人： Park, ChongHun , Yun, SoonIl , Jeong, Ilgi , Lee, Kyungsu
IPC分类号： G02F1/1362 , H01L27/32
CPC分类号： H01L27/124 , G02F1/136259 , G02F2001/136268 , H01L27/1222 , H01L27/1225 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/78663 , H01L29/78672 , H01L29/7869
摘要： Provided is a display device (100) including: a display panel (110) including a plurality of data lines (DL1...DLm) and gate lines formed to defme a plurality of pixels (P); a data drive unit (120); and a gate drive unit (130), wherein the display panel (110) is provided with a transistor (TR) that includes: a first electrode unit (E1, 310) configured to receive a first voltage (V1) and including two first electrodes (e1, e1'); a second electrode unit (E2, 320) configured to receive a second voltage (V2) and including two second electrodes (e2, e2'); a third electrode unit (E3, 330) configured to receive a third voltage (V3) and including a common third electrode, the third electrode unit (E3, 330) being formed to include a bent portion between the first electrode unit (E1, 310) and the second electrode unit (E2, 320); and two channels (CH1, CH2) formed to be spaced apart from each other adjacent to opposite ends of the third electrode unit (E3, 330) and configured to correspondingly connect the two first electrodes (e1, e1') and the two second electrodes (e2, e2'), respectively.
摘要翻译：提供一种显示装置（100），包括：显示面板（110），包括多条数据线（DL1 ... DLm）和形成为限定多个像素（P）的栅极线; 数据驱动单元（120）; 以及栅极驱动单元（130），其中所述显示面板（110）设置有晶体管（TR），所述晶体管包括：第一电极单元（E1，310），被配置为接收第一电压（V1）并且包括两个第一电极（e1，e1'）; 被配置为接收第二电压（V2）并且包括两个第二电极（e2，e2'）的第二电极单元（E2,320）; 第三电极单元（E3,330），被配置为接收第三电压（V3）并且包括公共第三电极，所述第三电极单元（E3，330）形成为包括在所述第一电极单元（E1，310）之间的弯曲部分）和第二电极单元（E2,320）; 和形成为与第三电极单元（E3，330）的相对端相邻的两个通道（CH1，CH2），并且被配置为相应地连接两个第一电极（e1，e1'）和两个第二电极（e2，e2'）。

2. 发明公开

EP0335724A2 Thin film transistor array for an electro-optical device and method of manufacturing the same 失效
标题翻译： Dünnfilmtransistor-Arrayfürein elektrooptisches Bauelement und dessen Herstellungsverfahren。
公开(公告)号：EP0335724A2
公开(公告)日：1989-10-04
申请号：EP89303169.0
申请日：1989-03-30
申请人： SEIKO INSTRUMENTS INC.
发明人： Tanaka, Hideo
IPC分类号： H01L29/78 , G02F1/133
CPC分类号： H01L27/12 , G02F1/136213 , H01L29/78663
摘要： A thin film transistor array for an electro-optical device comprises a plurality of row electrodes, a plurality of column electrodes, and a plurality of picture element electrodes, each of the picture element electrodes and one of the row and column electrodes operating as source (2) or drain electrodes (1) and having a n-type semi-conductor layer (8) thereon and connecting to each other through a semi-conductor layer (9) provided on the n-type semi-conductor layer (8), the other of the row and column electrodes operating as gate electrodes (31, 32) provided on the semi-conductor layer (9) through an insulating layer (10). The gate electrodes and the corresponding source and drain electrodes constitute switching transistors, and the gate electrodes and neighbouring picture element electrodes having overlapping portions which operate as holding capacitors (4).
摘要翻译：用于电光器件的薄膜晶体管阵列包括多个行电极，多个列电极和多个像素电极，每个像素电极和作为源极的行和列电极之一（ 2）或漏电极（1），并且在其上具有n型半导体层（8）并通过设置在n型半导体层（8）上的半导体层（9）彼此连接，作为通过绝缘层（10）设置在半导体层（9）上的栅电极（31,32）工作的行电极和列电极中的另一个。栅电极和相应的源漏电极构成开关晶体管，栅电极和相邻的像素电极具有作为保持电容器（4）工作的重叠部分。

3. 发明公开

EP2159844A2 Amorphous oxide semiconductor and thin film transistor using the same 有权
标题翻译： Amorpher Oxid-Halbleiter und diesen verwendenderDünnschichttistor
公开(公告)号：EP2159844A2
公开(公告)日：2010-03-03
申请号：EP09010057.9
申请日：2009-08-04
申请人： Canon Kabushiki Kaisha
发明人： Hayashi, Ryo , Omura, Hideyuki , Kumomi, Hideya , Shigesato, Yuzo
IPC分类号： H01L29/786
CPC分类号： H01L29/78663 , H01L29/7869
摘要： There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10 20 cm -3 or more to 1×10 22 cm -3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (O EX ) and hydrogen in the amorphous oxide semiconductor being 1×10 18 cm -3 or less.
摘要翻译：提供了包含氢和至少一种铟（In）和锌（Zn）元素的非晶氧化物半导体，含有1×10 20 cm -3以上1×10 20 cm -3以上的1个以上的氢原子和氘原子的非晶形氧化物半导体 10 22 cm -3以下，除了非晶形氧化物半导体中的过量氧（O EX）和氢之间的键之外，氧与氢之间的键的密度为1×10 18 cm -3以下。

4. 发明公开

EP0476701A2 A thin-film transistor and a thin film transistor panel using thin-film transistors of this type 失效
标题翻译：薄膜晶体管以及与这样的晶体管制成的矩阵型液晶显示装置。
公开(公告)号：EP0476701A2
公开(公告)日：1992-03-25
申请号：EP91116062.0
申请日：1991-09-20
申请人： CASIO COMPUTER COMPANY LIMITED
发明人： Mori, Hisatoshi, c/o Pat.Dep.Dev.Div., Hamura R&D , Sato, Syunichi, c/o Pat.Dep.Dev.Div., Hamura R&D , Konya, Naohiro, c/o Pat.Dep.Dev.Div., Hamura R&D , Ohno, Ichiro, c/o Pat.Dep.Dev.Div., Hamura R&D , Ishii, Hiromitsu, c/o Pat.Dep.Dev.Div., Hamura R&D , Matsuda, Kunihiro, c/o Pat.Dep.Dev.Div. Hamura R&D
IPC分类号： H01L29/772 , H01L29/41 , H01L29/43
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/4908 , H01L29/66765 , H01L29/78663
摘要： A thin-film transistor comprises a gate electrode (112) formed on a glass substrate (101), a gate insulating film (113) formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film (114) placed on the gate insulating film to cover the gate electrode; and a drain electrode (117) and a source electrode (116) spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate elec-trode is made of titanium-containing aluminum.
摘要翻译：一种薄膜晶体管包括形成在一个玻璃基片（101）的栅极电极（112），栅极绝缘膜 - （113）来形成基本上在所述基片的整个表面上以覆盖栅电极，非单晶硅放置在栅绝缘膜以覆盖栅电极的半导体电影（114）; 及漏电极（117）和源电极（116）上的半导体膜隔开指定的距离隔开，并电连接到半导体电影，以便形成晶体管的沟道区。栅极ELEC-TRODE由含钛铝。

5. 发明公开

EP0413390A3 Active matrix liquid crystal colour display devices 失效
标题翻译：主动矩阵液晶彩色显示设备
公开(公告)号：EP0413390A3
公开(公告)日：1991-12-27
申请号：EP90202177.3
申请日：1990-08-10
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Nicholas, Keith Harlow
IPC分类号： G02F1/136
CPC分类号： G09G3/002 , G02F1/133514 , G02F1/1368 , H01L29/4908 , H01L29/78633 , H01L29/78663 , H01L29/78675
摘要： A colour display device has groups of liquid crystal display elements (10) controlled by respective TFTs (16), the groups providing respective different colour outputs, e.g. red, green and blue, and being either interspersed in a single panel (11) with individual elements associated with colour filter elements (30) or in respective separate panels illuminated by differently coloured light. The TFTs are of multilayer structure having semiconductor, gate insulator and gate layers (32, 33, 36). At least one layer thickness of the TFTs is different from group to group and is selected in accordance with the colour light to which they are subjected so as to reduce absorption of that light, and consequently photo-induced currents in their semiconductor layers (32). Significantly reduced absorption is achievable by appropriate choice for example of semiconductor and insulator layer thicknesses based on optical interference considerations. The device can be used as a projection display device.

6. 发明公开

EP3208851A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管及其制造方法，阵列基板及显示装置
公开(公告)号：EP3208851A1
公开(公告)日：2017-08-23
申请号：EP15762463.6
申请日：2015-03-16
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： ZHANG, Ying , LI, Xin , ZHU, Hong , YU, Hongjun
IPC分类号： H01L29/786 , H01L29/06 , H01L21/336 , H01L27/12
CPC分类号： H01L27/124 , H01L27/12 , H01L29/06 , H01L29/458 , H01L29/66765 , H01L29/786 , H01L29/78633 , H01L29/78663 , H01L29/78669 , H01L29/78696
摘要： The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the thin-film transistor comprises a first active layer and a second active layer which are stacked; wherein, an orthographic projection of the first active layer on the substrate covers orthographic projections of the source electrode, the drain electrode as well as a gap located between the source electrode and the drain electrode on the substrate, and covers an orthographic projection of the gate electrode on the substrate; the second active layer is located at the gap between the source electrode and the drain electrode, and an orthographic projection of the second active layer on the substrate is located in a region where the orthographic projection of the gate electrode on the substrate is located. Under a backlight illumination condition, because the region where the second active layer of the thin-film transistor is located is shielded by the gate electrode, only a region, which is not shielded by the gate electrode, in the first active layer may generate photo-induced carriers. Consequently, there are less photo-induced carriers generated by such a structure, the increase of an off-state current is effectively inhibited, and thus an on-state current to off-state current ratio is increased, leading to an improved luminescence property of the thin-film transistor, and an enhanced image display quality of a display device.
摘要翻译：本发明公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。薄膜晶体管中的有源层包括堆叠的第一有源层和第二有源层; 其中，所述基板上的所述第一有源层的正投影覆盖所述源电极，所述漏电极以及所述基板上的所述源电极和所述漏电极之间的间隙的正投影，并且覆盖所述栅极的正投影在基板上的电极; 第二有源层位于源电极和漏电极之间的间隙处，第二有源层在衬底上的正交投影位于衬底上栅电极的正交投影位于的区域内。在背光照明条件下，由于薄膜晶体管的第二有源层所在的区域被栅电极遮挡，所以在第一有源层中只有未被栅电极遮挡的区域可能会产生照片诱导的载体。因此，由这种结构产生的光致载流子较少，截止态电流的增加被有效地抑制，因此导通态电流与断态电流之比增加，导致发光特性改善薄膜晶体管以及显示装置的增强的图像显示质量。

7. 发明授权

EP2005499B1 TECHNIQUES FOR DEVICE FABRICATION WITH SELF-ALIGNED ELECTRODES 有权转让
标题翻译：对于组件生产技术具有自对准电极
公开(公告)号：EP2005499B1
公开(公告)日：2013-04-24
申请号：EP07733583.4
申请日：2007-03-28
申请人： PLASTIC LOGIC LIMITED , Cambridge Enterprise Limited
发明人： CAIN, Paul, A. , NOH, Yong-Young , SIRRINGHAUS, Henning
IPC分类号： H01L51/10
CPC分类号： H01L29/78663 , H01L29/78672 , H01L51/0001 , H01L51/0022 , H01L51/0023 , H01L51/0541 , H01L51/102

8. 发明授权

EP2159844B1 Amorphous oxide semiconductor and thin film transistor using the same 有权
标题翻译：非晶氧化物半导体，并且该使用方向的薄膜晶体管
公开(公告)号：EP2159844B1
公开(公告)日：2011-11-16
申请号：EP09010057.9
申请日：2009-08-04
申请人： Canon Kabushiki Kaisha
发明人： Hayashi, Ryo , Omura, Hideyuki , Kumomi, Hideya , Shigesato, Yuzo
IPC分类号： H01L29/786
CPC分类号： H01L29/78663 , H01L29/7869

9. 发明公开

EP2005499A2 TECHNIQUES FOR DEVICE FABRICATION WITH SELF-ALIGNED ELECTRODES 有权转让
标题翻译：对于组件生产技术具有自对准电极
公开(公告)号：EP2005499A2
公开(公告)日：2008-12-24
申请号：EP07733583.4
申请日：2007-03-28
申请人： PLASTIC LOGIC LIMITED , Cambridge Enterprise Limited
发明人： CAIN, Paul, A. , NOH, Yong-Young , SIRRINGHAUS, Henning
IPC分类号： H01L51/10
CPC分类号： H01L29/78663 , H01L29/78672 , H01L51/0001 , H01L51/0022 , H01L51/0023 , H01L51/0541 , H01L51/102
摘要： This invention relates to the fabrication of electronic devices, such as thin-film transistors, in particular thin-film transistors in which patterning techniques are used for definition of electrode patterns that need to be accurately aligned with respect to underlying electrodes. The fabrication technique is applicable to various patterning techniques, such as laser ablation patterning or solution-based, direct-write printing techniques which are not capable of forming structures with a small linewidth, and/or that cannot be positioned very accurately with respect to previously desposited patterns. We thus describe self-aligned gate techniques which are applicable for both gate patterning by a subtractive technique, in particular selective laser ablation patterning, and gate patterning by an additive technique such as printing. The techniques facilitate the use of low-resolution gate patterning.

10. 发明公开

EP0476701A3 A thin-film transistor and a thin film transistor panel using thin-film transistors of this type 失效
标题翻译：薄膜晶体管和使用这种类型的薄膜晶体管的液晶矩阵显示装置
公开(公告)号：EP0476701A3
公开(公告)日：1992-04-15
申请号：EP91116062.0
申请日：1991-09-20
申请人： CASIO COMPUTER COMPANY LIMITED
发明人： Mori, Hisatoshi, c/o Pat.Dep.Dev.Div., Hamura R&D , Sato, Syunichi, c/o Pat.Dep.Dev.Div., Hamura R&D , Konya, Naohiro, c/o Pat.Dep.Dev.Div., Hamura R&D , Ohno, Ichiro, c/o Pat.Dep.Dev.Div., Hamura R&D , Ishii, Hiromitsu, c/o Pat.Dep.Dev.Div., Hamura R&D , Matsuda, Kunihiro, c/o Pat.Dep.Dev.Div. Hamura R&D
IPC分类号： H01L29/772 , H01L29/41 , H01L29/43
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/4908 , H01L29/66765 , H01L29/78663
摘要： A thin-film transistor comprises a gate electrode (112) formed on a glass substrate (101), a gate insulating film (113) formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film (114) placed on the gate insulating film to cover the gate electrode; and a drain electrode (117) and a source electrode (116) spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate elec-trode is made of titanium-containing aluminum.

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