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1. 发明公开

EP3391415A1 SUPERCONDUCTING BUMP BONDS 有权转让
公开(公告)号：EP3391415A1
公开(公告)日：2018-10-24
申请号：EP15828622.9
申请日：2015-12-30
申请人： Google LLC , Mutus, Joshua Yousouf , Lucero, Erik Anthony
发明人： MUTUS, Joshua Yousouf , LUCERO, Erik Anthony
IPC分类号： H01L27/18 , H01L23/498
CPC分类号： H01L39/045 , H01L23/49816 , H01L23/49888 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/18 , H01L2224/0345 , H01L2224/0362 , H01L2224/0381 , H01L2224/03826 , H01L2224/0384 , H01L2224/0401 , H01L2224/05023 , H01L2224/05025 , H01L2224/05124 , H01L2224/05179 , H01L2224/05186 , H01L2224/05564 , H01L2224/05568 , H01L2224/05669 , H01L2224/05684 , H01L2224/05686 , H01L2224/1145 , H01L2224/1181 , H01L2224/13023 , H01L2224/13109 , H01L2224/13116 , H01L2224/13164 , H01L2224/13179 , H01L2224/13183 , H01L2224/16145 , H01L2224/81013 , H01L2224/81193 , H01L2224/81201 , H01L2224/81409 , H01L2225/06513 , H01L2225/06541 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/20102 , H01L2924/00014 , H01L2924/04941
摘要： A device (100) includes a first chip (104) having a first circuit element (112), a first interconnect pad (116) in electrical contact (118) with the first circuit element, and a barrier layer (120) on the first interconnect pad, a superconducting bump bond (106) on the barrier layer, and a second chip (102) joined to the first chip by the superconducting bump bond, the second chip having a quantum circuit element (108), in which the superconducting bump bond provides an electrical connection between the first circuit element and the quantum circuit element.

2. 发明公开

EP0358879A2 Method of making high density interconnects 失效
标题翻译： Verfahren zur Herstellung hochintegrierter Verbindungen。
公开(公告)号：EP0358879A2
公开(公告)日：1990-03-21
申请号：EP89112791.2
申请日：1989-07-12
申请人： Hewlett-Packard Company
发明人： Ruby, Richard C.
IPC分类号： H01L39/24 , H01L23/485
CPC分类号： H01L21/76891 , H01L23/49888 , H01L23/49894 , H01L39/2464 , H01L39/249 , H01L2924/0002 , H01L2924/00
摘要： A method of making a high density interconnect with superconductive lines is provided. A layer of high T c superconductive material is deposited on an electrically insulative substrate layer (32) of closely matching crystal structure. The superconductive layer (30) is then photolithographically patterned to define part of an electrical interconnect circuit, and either selectively etched away or ion bombarded to destroy its superconductivity in noncircuit areas. Another layer (34) of insulative material is deposited over the superconductive lines thus formed, and via holes (38) are formed therein. The steps are then repeated for additional layers of superconductive material and insulative material until a complete interconnect is formed. The high T c material is superconductive at 77 K and has orders of magnitude less attenuation than copper at the same temperature.
摘要翻译：提供了一种用超导线制造高密度互连的方法。一层高Tc超导材料沉积在具有非常匹配的晶体结构的电绝缘衬底层（32）上。然后将超导层（30）光刻图案化以限定电互连电路的一部分，并且选择性蚀刻掉或离子轰击以破坏其在非电路区域中的超导性。绝缘材料的另一层（34）沉积在如此形成的超导线上，并且在其中形成通孔（38）。然后对另外的超导材料层和绝缘材料重复这些步骤，直到形成完整的互连。高Tc材料在77K处是超导的，并且在相同温度下具有比铜少几个数量级的衰减。

3. 发明公开

EP0347470A1 METHOD OF FORMING SUPERCONDUCTING WIRES 失效
标题翻译： VERFAHREN ZUR BILDUNG VON SUPRALEITENDENDRÄHTEN。
公开(公告)号：EP0347470A1
公开(公告)日：1989-12-27
申请号：EP89900893.2
申请日：1988-12-23
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： SUGIHARA, T Mitsubishi Metal Corp Chuo Kenkyujo , MURAKAMI, Y Mitsubishi Metal Corp ChuoKenkyujo , TAKESHITA, T Mitsubishi Metal Corp ChuoKenkyujo
IPC分类号： H01L21/88 , H01L39/06
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L2924/0002 , H01L2924/00
摘要： In the method of forming superconducting wires according to the present invention, a wiring pattern is formed by the lift-off method after depositing a raw material on a masking layer. This enables a masking layer having a fine wiring pattern to be formed by lithography.
摘要翻译：在形成超导线的方法中，通过在掩模层上沉积原料之后通过剥离法形成布线图案。这使得能够通过光刻形成具有精细布线图案的掩模层。

4. 发明公开

EP0346494A1 SUPERCONDUCTING WIRE STRUCTURE 失效
标题翻译： SUPRALEITED DRAHTSTRUKTUR。
公开(公告)号：EP0346494A1
公开(公告)日：1989-12-20
申请号：EP89900892.4
申请日：1988-12-23
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： TAKESHITA, T Mitsubishi Metal Corp Chuo Kenkyujo , SUGIHARA, T Mitsubishi Metal Corp Chuo Kenkyujo
IPC分类号： H01L21/60 , H01L39/06
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L39/143 , H01L39/2461 , H01L2924/0002 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10S505/73 , Y10T29/49014 , Y10T428/12618 , H01L2924/00
摘要： A wire structure according to the present invention has a buffer layer between an insulating layer and a superconducting ceramic wire body. Since this buffer layer does not chemically react with the superconducting ceramic wire body at a high temperature, the buffer layer does not cause the superconducting ceramic wire body to lose the superconductivity thereof during the formation of the wire body.
摘要翻译：导线结构在绝缘层和超导陶瓷线体之间具有缓冲层。由于该缓冲层在高温下不与超导陶瓷线体发生化学反应，所以缓冲层不会导致超导陶瓷线体在形成线体时失去超导性。

5. 发明公开

EP0338084A4 STRUCTURE OF SUPERCONDUCTOR WIRING AND PROCESS FOR ITS FORMATION. 失效
标题翻译：超级接合线的结构及其制造方法。
公开(公告)号：EP0338084A4
公开(公告)日：1989-12-14
申请号：EP88908375
申请日：1988-09-28
申请人： MITSUBISHI METAL CORP
发明人： MURAKAMI YOSHIO MITSUBISHI K K , SUGIHARA TADASHI MITSUBISHI K , TAKESHITA TAKUO MITSUBISHI K K
IPC分类号： H01L23/498 , H01L23/532 , H01L39/24
CPC分类号： H01L39/2477 , H01L23/49888 , H01L23/53285 , H01L39/2464 , H01L2924/0002 , H01L2924/00

6. 发明授权

EP0274407B1 Devices and systems based on novel superconducting material 有权转让
标题翻译：在新的基于超导材料的安排和系统
公开(公告)号：EP0274407B1
公开(公告)日：1996-06-19
申请号：EP88300018.4
申请日：1988-01-05
申请人： AT&T Corp.
发明人： Batlogg, Bertram Josef , Cava, Robert Joseph , van Dover, Robert Bruce
IPC分类号： H01L39/14 , H01L39/12
CPC分类号： C04B35/4504 , C04B35/4508 , C04B35/4521 , H01L23/49888 , H01L39/126 , H01L39/225 , H01L39/2419 , H01L2924/0002 , Y10S505/879 , Y10S505/884 , H01L2924/00

7. 发明公开

EP0671764A3 A process for fabricating a superconducting circuit 失效
标题翻译：空值
公开(公告)号：EP0671764A3
公开(公告)日：1995-10-11
申请号：EP95108249.4
申请日：1991-10-31
申请人： Sumitomo Electric Industries, Ltd.
发明人： Inada, Hiroshi, c/o Osaka Works , Nakamura, Takao, c/o Osaka Works , Ilyama, Michitomo, c/o Osaka Works
IPC分类号： H01L21/90 , H01L23/532
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L23/53285 , H01L2924/0002 , Y10S505/703 , H01L2924/00
摘要： A process for fabricating a superconductor circuit consisting of at least one layer of oxide superconductor material having conducting portions and non-conducting portions includes the following steps: a thin film 2 of oxide superconductor is deposited on a substrate 1 such that the a-axis of crystals of the thin film 2 is oriented perpendicularly to the surface of the substrate 1, an oxygen barrier layer 3a is formed over selected areas of the oxide superconductor layer, a deoxygenation treatment is applied so as to deplete the portions 2a of the thin film 2 which are not shielded by the oxygen barrier layer 3a whereby to render such portions 2a non-superconducting, and, after the deoxygenation step, the oxygen barrier layer 3a is removed. This process enables the production of a superconductor circuit having a planar surface.
摘要翻译：具有图案化超导布线的超导电路。每个布线由沉积在基板（1）上的氧化物超导体的薄膜（2）的至少一部分（2分钟）组成。部分（2分钟）具有预定的晶体取向，其余部分（2秒）具有不同的晶体取向或改变为非超导体。超导电路具有平坦表面。在变型中，在氧化物超导体的薄膜的不同部分处产生各自具有不同晶体取向的两个不同的布线（21,22），使得超导电流分开地通过共同薄膜中的两个不同部分流动。

8. 发明授权

EP0415644B1 Superconducting interconnection apparatus 失效转让
标题翻译：装置用于超导化合物。
公开(公告)号：EP0415644B1
公开(公告)日：1995-08-02
申请号：EP90309231.0
申请日：1990-08-22
申请人： AT&T Corp.
发明人： Briley, Bruce Edwin , Larson, Mikiel Loyal , Montsma, John
IPC分类号： H01L39/04 , H01L23/48
CPC分类号： H01L23/49888 , H01L2924/0002 , H01L2924/00

9. 发明授权

EP0285445B1 Electric circuit having superconducting multilayered structure and manufacturing method for same 失效
标题翻译：电电路与超导多层结构及其制造方法。
公开(公告)号：EP0285445B1
公开(公告)日：1994-06-01
申请号：EP88302957.1
申请日：1988-03-31
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei
IPC分类号： H01L23/52 , H01L23/48 , H01L39/12 , H01L39/24 , H01L21/90
CPC分类号： H01L23/53285 , H01L21/76891 , H01L23/49888 , H01L29/437 , H01L39/2461 , H01L39/2467 , H01L39/247 , H01L2924/0002 , H01L2924/09701 , Y10S428/93 , Y10S505/703 , Y10T428/24802 , H01L2924/00

10. 发明公开

EP0484248A2 A novel superconducting circuit and a process for fabricating the same 失效
标题翻译： Supraleitende Schaltung und Verfahren zu ihrer Herstellung。
公开(公告)号：EP0484248A2
公开(公告)日：1992-05-06
申请号：EP91402931.9
申请日：1991-10-31
申请人： Sumitomo Electric Industries, Ltd.
发明人： Inada, Hiroshi, c/o Osaka Works , Nakamura, Takao, c/o Osaka Works , Iiyama, Michitomo, c/o Osaka Works
IPC分类号： H01L21/768 , H01L23/485 , H01L23/498 , H01L39/24
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L23/53285 , H01L2924/0002 , Y10S505/703 , H01L2924/00
摘要： A superconducting circuit having patterned superconducting wiring lines. Each wiring line consists of at least one portion (2′) of the thin film (2) of an oxide superconductor deposited on a substrate (1). The portion (2′) has a predetermined crystal orientation and the remaining portions (2˝) have a different crystal orientation or changed to non-superconductor. The superconducting circuit has a planar surface.
In variations, two different wiring lines (21, 22) each having a different crystal orientation are produced at different portions of a thin film of oxide superconductor, so that superconducting current flow separately through two different portions in a common thin film.
摘要翻译：具有图案化超导布线的超导电路。每个布线由沉积在基板（1）上的氧化物超导体的薄膜（2）的至少一部分（2分钟）组成。部分（2分钟）具有预定的晶体取向，其余部分（2秒）具有不同的晶体取向或改变为非超导体。超导电路具有平坦表面。在变型中，在氧化物超导体的薄膜的不同部分处产生各自具有不同晶体取向的两个不同的布线（21,22），使得超导电流分开地通过共同薄膜中的两个不同部分流动。

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