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    • 5. 发明公开
    • DIAMOND ELECTRON EMISSION CATHODE, ELECTRON EMISSION SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSURE DEVICE
    • UNG EN EN EN EN UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG
    • EP1892740A1
    • 2008-02-27
    • EP06757402.0
    • 2006-06-19
    • Sumitomo Electric Industries, Ltd.
    • UEDA, Akihiko, Sumitomo Electric Industries, Ltd.YAMAMOTO, Yoshiyuki, Sumitomo Electric Ind., Ltd.NISHIBAYASHI, Yoshiki, Sumitomo Electric Ind., LtdIMAI, Takahiro, Sumitomo Electric Industries, Ltd.
    • H01J1/15H01J37/06H01J37/305
    • H01J1/15H01J1/14H01J37/06H01J2237/06308H01J2237/06316
    • An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2 × 10 15 cm 3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2 × 10 15 cm -3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
    • 目的是提供使用金刚石的电子发射阴极和电子发射源,其具有适用于电子射线和电子束装置和真空管,特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ,以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石,金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分,在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的种类之一是含有2×10 15 cm 3以上的n型杂质的n型半导体,另一种是含有2×10 15 cm -3的p型杂质的p型半导体 以上,p型半导体和n型半导体结合在一起,加热部分被平行于接合面激励并被一对电流引入端直接加热,并且一些引入的电子从电子发射 发射部分。
    • 8. 发明公开
    • Bonded article with improved work function uniformity and method for making the same
    • 粘结制品具有改进的放电电位的均匀性及其制造方法
    • EP1063670A2
    • 2000-12-27
    • EP00305016.8
    • 2000-06-13
    • LUCENT TECHNOLOGIES INC.
    • Katsap, VictorWaskiewicz, Waren K.
    • H01J1/15H01J9/04H01J37/06
    • H01J1/15H01J9/04H01J37/06H01J2237/3175
    • A bonded article including a single crystal cathode with an improved work function, for use in projection electron beam lithography, such as the SCALPEL™ system. Because of its single crystalline structure, the single crystal cathode has only slightly misoriented grains. As a result, the single crystal cathode has fewer structural non-uniformities than conventional micro-polycrystalline foils, and therefore a more uniform emission characteristic. The single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. A local bonding technique for bonding a single crystal cathode with a conventional member. The local bonding technique does not recrystallize a center of the single crystal cathode, and therefore produces a bonded article which is usable in a projection electron lithography system, such as the SCALPEL™ system. The local bonding technique may be laser welding and the single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. The member may be a conventional filament and the filament may be made of one of tungsten, a tungsten-rhenium alloy, and a tungsten-tantalum alloy.
    • 一种粘结制品,包括含有改进的功函数的单晶阴极,在投影电子束光刻,:如SCALPEL“¢系统中使用,由于其单结晶结构的,单晶阴极仅略微取向错误的晶粒。 其结果是,单晶阴极具有结构的非均匀性比常规的微多晶箔更少,因此更均匀的发射特性。 单晶阴极可以由钽,钨,铼和钼中的至少一种制成。 用于与常规部件贴合的单晶阴极局部接合技术。 该局部粘合技术不再结晶单晶阴极的中心处,并因此产生一个粘结制品所有这些是在投影电子光刻系统中使用,:如SCALPEL“¢系统,该局部粘合技术可以是激光焊接和单 晶体阴极可以由钽,钨,铼和钼中的至少一种制成。 所述构件可以是传统的灯丝与灯丝可以由钨,钨 - 铼合金中的一种,和钨 - 钽合金构成。